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1. 发明授权

US08591795B2 Method of exocasting an article of semiconducting material 有权
标题翻译：分离半导体材料制品的方法
公开(公告)号：US08591795B2
公开(公告)日：2013-11-26
申请号：US12631054
申请日：2009-12-04
申请人： Prantik Mazumder , Balram Suman
发明人： Prantik Mazumder , Balram Suman
IPC分类号： C30B28/04
CPC分类号： C30B15/007 , C30B11/00 , C30B19/062 , C30B29/06
摘要： A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.
摘要翻译：制造半导体材料制品的方法包括选择制品的目标厚度，然后将模具浸入熔融半导体材料中以便浸入时间有效地在模具的外表面上形成半导体材料的固体层，其中固体层的厚度基本上等于目标厚度。浸入时间被选择为基本上等于转变时间，其从具有特定属性的模具的实心层厚度对浸没时间的图确定，包括模具成分，模具厚度和初始模具温度。过渡时间，从而浸没时间对应于固体层厚度对于特定模具的固体层厚度与浸没时间曲线的最大值。

2. 发明授权

US08234909B2 Method and apparatus for inspecting ceramic wall flow filters 有权
标题翻译：检查陶瓷壁流滤器的方法和装置
公开(公告)号：US08234909B2
公开(公告)日：2012-08-07
申请号：US12548057
申请日：2009-08-26
申请人： Balram Suman , Srinivasa Rao Vaddiraju , Wei Xu
发明人： Balram Suman , Srinivasa Rao Vaddiraju , Wei Xu
IPC分类号： G01N15/08
CPC分类号： G01M3/38 , B01D46/2418 , B01D46/42 , G01N15/082 , G01N21/95692
摘要： Methods are disclosed for inspecting a cylindrical porous ceramic body by positioning a diffuser near, and spaced apart from, the first end of a ceramic body; flowing a tracer flow toward the diffuser, wherein a first portion of the tracer flow passes through the diffuser, and a second portion of the tracer flow does not pass through the diffuser, the first and second portions of the tracer flow then entering the first end of the ceramic body, wherein the average velocity of the first portion of the tracer flow entering the ceramic body VAVG1 is lower than the average velocity of the second portion of the tracer flow entering the ceramic body VAVG2; directing light toward the second end of the ceramic body; and detecting reflected light coming from a location proximate the second transverse face at the second end of the ceramic body.
摘要翻译：公开了用于通过将陶瓷体的第一端附近和间隔开设置扩散器来检查圆柱形多孔陶瓷体的方法; 使示踪剂流向扩散器流动，其中示踪剂流的第一部分通过扩散器，并且示踪剂流的第二部分不通过扩散器，示踪剂流的第一和第二部分然后进入第一端其中进入陶瓷体VAVG1的示踪剂流的第一部分的平均速度低于进入陶瓷体VAVG2的示踪剂流的第二部分的平均速度; 将光引向陶瓷体的第二端; 以及检测来自陶瓷体的第二端处靠近第二横向面的位置的反射光。

3. 发明申请

US20120129293A1 METHODS OF MAKING AN UNSUPPORTED ARTICLE OF A SEMICONDUCTING MATERIAL USING THERMALLY ACTIVE MOLDS 审中-公开
标题翻译：使用热活性物质制造半导体材料的不相关物品的方法
公开(公告)号：US20120129293A1
公开(公告)日：2012-05-24
申请号：US13300829
申请日：2011-11-21
申请人： Sergey Potapenko , Balram Suman , Lili Tian , Alex Usenko
发明人： Sergey Potapenko , Balram Suman , Lili Tian , Alex Usenko
IPC分类号： H01L31/18 , H01L21/22
CPC分类号： C30B11/002 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The invention relates to methods of making unsupported articles of semiconducting material using thermally active molds having an external surface temperature, Tsurface, and a core temperature, Tcore, whererin Tsurface>Tcore.
摘要翻译：本发明涉及使用具有外表面温度Tsurface和核心温度Tcore，其中T表面> Tcore的热活性模具制造无支撑物品的半导体材料的方法。

4. 发明授权

US09302937B2 Damage-resistant glass articles and method 有权
标题翻译：耐损玻璃制品及方法
公开(公告)号：US09302937B2
公开(公告)日：2016-04-05
申请号：US13083847
申请日：2011-04-11
申请人： Suresh Thakordas Gulati , Balram Suman
发明人： Suresh Thakordas Gulati , Balram Suman
IPC分类号： B32B17/00 , B32B37/02 , B32B37/16 , C03C21/00 , B32B37/08 , B32B37/14 , C03B23/203 , C03B27/00 , C03B27/04 , C03B27/06 , C03C23/00 , B32B37/00
CPC分类号： B32B17/06 , B32B37/0015 , B32B37/08 , B32B37/144 , B32B2307/54 , B32B2307/558 , B32B2315/08 , B32B2457/208 , C03B23/203 , C03B27/00 , C03B27/0413 , C03B27/065 , C03C21/00 , C03C23/007 , Y10T156/10 , Y10T428/2495 , Y10T428/24992
摘要： A strengthened glass article has opposing first and second compressively stressed surface portions bound to a tensilely stressed core portion, with the first surface portion having a higher level of compressive surface stress than the second surface portion for improved resistance to surface damage, the compressively stressed surface portions being provided by lamination, ion-exchange, thermal tempering, or combinations thereof to control the stress profiles and limit the fracture energies of the articles.
摘要翻译：强化的玻璃制品具有相对的第一和第二压缩应力的表面部分结合到拉伸应力的芯部分，其中第一表面部分具有比第二表面部分更高的压缩表面应力水平，以改善耐表面损伤性，压应力表面通过层压，离子交换，热回火或其组合提供部分，以控制应力分布并限制制品的断裂能。

5. 发明申请

US20120299218A1 COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL 审中-公开
标题翻译：复合材料的主要成分及制备方法
公开(公告)号：US20120299218A1
公开(公告)日：2012-11-29
申请号：US13117440
申请日：2011-05-27
申请人： Glen Bennett Cook , Prantik Mazumder , Balram Suman , Natesan Venkataraman
发明人： Glen Bennett Cook , Prantik Mazumder , Balram Suman , Natesan Venkataraman
IPC分类号： B28B1/38 , B28B7/42
CPC分类号： C30B15/007 , C30B15/36 , C30B29/06
摘要： The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon.
摘要翻译：本公开涉及一种基材模具，其包括壳体材料，该外壳材料具有被配置为与熔融半导体材料接合的外表面，以及被配置为热转印表面以传递热量的内表面，以及限定在外壳材料内的构造物，外壳材料通过外壳材料的热传递表面的热量。衬底模具被配置为浸入熔融半导体材料中，并且外壳材料的外表面被配置为具有在其上形成的凝固的熔融半导体材料。

6. 发明申请

US20110033643A1 METHODS OF MAKING AN UNSUPPORTED ARTICLE OF PURE OR DOPED SEMICONDUCTING MATERIAL 有权
标题翻译：制备纯或半导体材料的不合格品的方法
公开(公告)号：US20110033643A1
公开(公告)日：2011-02-10
申请号：US12523274
申请日：2009-02-27
申请人： Glen Bennett Cook , Prantik Mazumder , Kamal Kishore Soni , Balram Suman , Christopher Scott Thomas , Natesan Venkataraman
发明人： Glen Bennett Cook , Prantik Mazumder , Kamal Kishore Soni , Balram Suman , Christopher Scott Thomas , Natesan Venkataraman
IPC分类号： B32B1/08 , B28B1/16 , B28B21/46
CPC分类号： C30B29/06 , C30B15/007 , C30B28/04
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
摘要翻译：本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。

7. 发明申请

US20100219549A1 METHODS OF MAKING AN UNSUPPORTED ARTICLE OF SEMICONDUCTING MATERIAL BY CONTROLLED UNDERCOOLING 失效
标题翻译：通过控制下的方法制造半导体材料不受限制的物品
公开(公告)号：US20100219549A1
公开(公告)日：2010-09-02
申请号：US12394608
申请日：2009-02-27
申请人： Glen Bennett Cook , Prantik Mazumder , Balram Suman
发明人： Glen Bennett Cook , Prantik Mazumder , Balram Suman
IPC分类号： B28B1/38 , B22D29/00 , B22D23/04
CPC分类号： C30B15/007 , C30B28/10 , C30B29/06
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as semiconducting material that may be useful in making photovoltaic cells.
摘要翻译：本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料。

8. 发明授权

US07771643B1 Methods of making an unsupported article of semiconducting material by controlled undercooling 失效
标题翻译：通过控制过冷制备无载体的半导体材料的方法
公开(公告)号：US07771643B1
公开(公告)日：2010-08-10
申请号：US12394608
申请日：2009-02-27
申请人： Glen Bennett Cook , Prantik Mazumder , Balram Suman
发明人： Glen Bennett Cook , Prantik Mazumder , Balram Suman
IPC分类号： B28B1/38 , C30B19/00
CPC分类号： C30B15/007 , C30B28/10 , C30B29/06
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as semiconducting material that may be useful in making photovoltaic cells.
摘要翻译：本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料。

9. 发明授权

US08840858B2 Apparatus for mixing vaporized precursor and gas and method therefor 有权
标题翻译：用于混合蒸发的前体和气体的装置及其方法
公开(公告)号：US08840858B2
公开(公告)日：2014-09-23
申请号：US13176804
申请日：2011-07-06
申请人： Lewis A Bernstein , Dana Craig Bookbinder , Jason A Dillard , Jennifer L Porter , Balram Suman , Pushkar Tandon
发明人： Lewis A Bernstein , Dana Craig Bookbinder , Jason A Dillard , Jennifer L Porter , Balram Suman , Pushkar Tandon
IPC分类号： C01B33/12 , C03B37/014
CPC分类号： C01B33/183 , B01J12/00 , C03B37/01413 , C03B2207/42 , C03B2207/46
摘要： An apparatus for mixing a vaporized precursor with a gas for producing silica particles is provided. The apparatus includes a mixer housing, a precursor delivery chamber having an output in communication with the mixer housing for delivering a vaporized precursor in the mixer housing, and an oxidizing gas delivery chamber having an output in communication with the mixer housing for delivering an oxidizing gas to be mixed with the vaporized precursor. The apparatus further includes a flashback member disposed within the mixer housing and between the output of the precursor delivery chamber and the output of the oxidizing gas delivery chamber. The flashback member is located at a minimum distance from the output of the oxidizing gas delivery chamber defined by Lminimum (cm)=0.453 U (Re)−0.5567, wherein U is the flow rate in cm/sec of precursor and Re is the flow Reynolds number. The flashback member may include a tapered surface on at least one side to reduce recirculation of vaporized gas.
摘要翻译：提供了一种用于混合蒸发的前体与用于生产二氧化硅颗粒的气体的装置。该装置包括混合器壳体，前体输送室，其具有与混合器壳体连通的输出，用于将混合器壳体内的蒸发前体输送;以及氧化气体输送室，具有与混合器壳体连通的输出，用于输送氧化气体与蒸发的前体混合。该装置还包括设置在混合器壳体内并且在前体输送室的输出和氧化气体输送室的输出之间的回火构件。回闪构件位于距离最小（cm）= 0.453U（Re）-0.5567所限定的氧化气体输送室的输出的最小距离处，其中U是前体的流速（cm / sec），Re是流量雷诺数。闪回构件可以在至少一侧上包括锥形表面以减少气化气体的再循环。

10. 发明授权

US08617447B2 Methods of making an unsupported article of pure or doped semiconducting material 有权
标题翻译：制造纯或掺杂半导体材料的无载体制品的方法
公开(公告)号：US08617447B2
公开(公告)日：2013-12-31
申请号：US12523274
申请日：2009-02-27
申请人： Glen Bennett Cook , Prantik Mazumder , Kamal Kishore Soni , Balram Suman , Christopher Scott Thomas , Natesan Venkataraman
发明人： Glen Bennett Cook , Prantik Mazumder , Kamal Kishore Soni , Balram Suman , Christopher Scott Thomas , Natesan Venkataraman
IPC分类号： C30B28/04
CPC分类号： C30B29/06 , C30B15/007 , C30B28/04
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
摘要翻译：本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。

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