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1. 发明授权

US07932110B2 Layers and patterns of nanowire or carbon nanotube using chemical self assembly and fabricating method in liquid crystal display device thereby 有权
标题翻译：因此，使用液晶显示装置中的化学自组装和制造方法的纳米线或碳纳米管的层和图案
公开(公告)号：US07932110B2
公开(公告)日：2011-04-26
申请号：US12318521
申请日：2008-12-30
申请人： Jae-Hyun Kim , Bo-Hyun Lee , Tae-Hyoung Moon
发明人： Jae-Hyun Kim , Bo-Hyun Lee , Tae-Hyoung Moon
IPC分类号： H01L21/76
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/66742 , H01L29/78696 , H01L51/0004 , H01L51/0048 , H01L51/0049 , H01L51/0075 , Y10S977/742
摘要： Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH2) by using a chemical self-assembled monolayer (SAM) material having at least one end terminated with amine group (—NH2); and a first nanowire or nanotube layer ionically coupled to the amine group (—NH2) of the surface of the substrate.
摘要翻译：公开了使用纳米线和/或纳米管溶液和基于二胺的自组装单层（SAM）材料来形成半导体层和薄膜晶体管的导电层的化学自组装的纳米线或纳米管的层和图案。包括使用化学自组装的纳米线或纳米管的层和图案的层和图案包括：通过使用化学自组装单层（SAM）材料具有终止于胺基（-NH 2）的表面的基材，其具有至少一个末端与胺基（-NH 2）; 以及与衬底表面的胺基（-NH 2）离子耦合的第一纳米线或纳米管层。

2. 发明申请

US20100065818A1 Layers and patterns of nanowire or carbon nanotube using chemical self assembly and fabricating method in liquid crystal display device thereby 有权
标题翻译：因此，使用液晶显示装置中的化学自组装和制造方法的纳米线或碳纳米管的层和图案
公开(公告)号：US20100065818A1
公开(公告)日：2010-03-18
申请号：US12318521
申请日：2008-12-30
申请人： Jae-Hyun Kim , Bo-Hyun Lee , Tae-Hyoung Moon
发明人： Jae-Hyun Kim , Bo-Hyun Lee , Tae-Hyoung Moon
IPC分类号： H01L29/12 , H01L33/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/66742 , H01L29/78696 , H01L51/0004 , H01L51/0048 , H01L51/0049 , H01L51/0075 , Y10S977/742
摘要： Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH2) by using a chemical self-assembled monolayer (SAM) material having at least one end terminated with amine group (—NH2); and a first nanowire or nanotube layer ionically coupled to the amine group (—NH2) of the surface of the substrate.
摘要翻译：公开了使用纳米线和/或纳米管溶液和基于二胺的自组装单层（SAM）材料来形成半导体层和薄膜晶体管的导电层的化学自组装的纳米线或纳米管的层和图案。包括使用化学自组装的纳米线或纳米管的层和图案的层和图案包括：通过使用化学自组装单层（SAM）材料具有终止于胺基（-NH 2）的表面的基材，其具有至少一个末端与胺基（-NH 2）; 以及与衬底表面的胺基（-NH 2）离子耦合的第一纳米线或纳米管层。

3. 发明授权

US08592820B2 Layers and patterns of nanowire or carbon nanotube using chemical self assembly and fabricating method in liquid crystal display device thereby 有权
标题翻译：因此，使用液晶显示装置中的化学自组装和制造方法的纳米线或碳纳米管的层和图案
公开(公告)号：US08592820B2
公开(公告)日：2013-11-26
申请号：US13072286
申请日：2011-03-25
申请人： Jae-Hyun Kim , Bo-Hyun Lee , Tae-Hyoung Moon
发明人： Jae-Hyun Kim , Bo-Hyun Lee , Tae-Hyoung Moon
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/66742 , H01L29/78696 , H01L51/0004 , H01L51/0048 , H01L51/0049 , H01L51/0075 , Y10S977/742
摘要： Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH2) by using a chemical self-assembled monolayer (SAM) material having at least one end terminated with amine group(—NH2); and a first nanowire or nanotube layer ionically coupled to the amine group (—NH2) of the surface of the substrate.
摘要翻译：公开了使用纳米线和/或纳米管溶液和基于二胺的自组装单层（SAM）材料来形成半导体层和薄膜晶体管的导电层的化学自组装的纳米线或纳米管的层和图案。包括使用化学自组装的纳米线或纳米管的层和图案的层和图案包括：通过使用化学自组装单层（SAM）材料具有终止于胺基（-NH 2）的表面的基材，其具有至少一个末端与胺基（-NH 2）; 以及与衬底表面的胺基（-NH 2）离子耦合的第一纳米线或纳米管层。

4. 发明授权

US08551825B2 Method for fabricating a thin film transistor with an organic passivation layer 有权
标题翻译：制造具有有机钝化层的薄膜晶体管的方法
公开(公告)号：US08551825B2
公开(公告)日：2013-10-08
申请号：US13155972
申请日：2011-06-08
申请人： Bo Hyun Lee , Jae Seok Heo , Woong Gi Jun
发明人： Bo Hyun Lee , Jae Seok Heo , Woong Gi Jun
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , G02F1/136227
摘要： A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs. In particular, the method comprises a thin film transistor (TFT) array comprising: forming a gate line and a gate electrode on a substrate; forming a semiconductor layer to be insulated from the gate electrode, and overlapped with a portion of the gate electrode; forming a source electrode and a drain electrode on both sides of the semiconductor layer, respectively, while forming a data line intersecting with the gate line; forming a passivation layer over an entire upper surface of the substrate including the source electrode and the drain electrode using a sol compound of a metal alkoxide having a photosensitive group X and a silicon alkoxide having a photosensitive group Y; light-exposing and developing the passivation layer to form a contact hole through which the drain electrode is exposed; and forming a pixel electrode to be in contact with the drain electrode through the contact hole.
摘要翻译：公开了薄膜晶体管（TFT）阵列基板和制造薄膜晶体管（TFT）阵列基板的方法），其中钝化层直接进行曝光和图案化处理，而不使用任何光致抗蚀剂，从而简化制造工艺并确保降低准备成本。特别地，该方法包括薄膜晶体管（TFT）阵列，其包括：在基板上形成栅极线和栅电极; 形成与所述栅电极绝缘的半导体层，并与所述栅电极的一部分重叠; 在形成与栅极线相交的数据线的同时分别在半导体层的两侧形成源电极和漏电极; 使用具有感光性基团X的金属醇盐和具有感光性基团Y的硅醇盐的溶胶化合物，在包含源电极和漏电极的基板的整个上表面上形成钝化层; 曝光和显影钝化层以形成漏电极暴露的接触孔; 以及通过接触孔形成与漏电极接触的像素电极。

5. 发明申请

US20130029472A1 GaN BONDED SUBSTRATE AND METHOD OF MANUFACTURING GaN BONDED SUBSTRATE 审中-公开
标题翻译： GaN键合衬底和制造GaN键合衬底的方法
公开(公告)号：US20130029472A1
公开(公告)日：2013-01-31
申请号：US13559357
申请日：2012-07-26
申请人： BONGMO PARK , Kwang Je Woo , Jun Sung Choi , Bo Hyun Lee , Seung Yong Park
发明人： BONGMO PARK , Kwang Je Woo , Jun Sung Choi , Bo Hyun Lee , Seung Yong Park
IPC分类号： H01L21/02
CPC分类号： C30B29/406 , C30B33/06 , H01L33/0075 , H01L33/0079
摘要： A gallium nitride (GaN) bonded substrate and a method of manufacturing a GaN bonded substrate in which a polycrystalline nitride-based substrate is used. The method includes loading a single crystalline GaN substrate and a polycrystalline nitride substrate into a bonder; raising the temperature in the bonder; bonding the single crystalline GaN substrate and the polycrystalline nitride substrate together by pressing the single crystalline GaN substrate and the polycrystalline nitride substrate against each other after the step of raising the temperature; and cooling the resultant bonded substrate.
摘要翻译：氮化镓（GaN）键合衬底以及其中使用多晶氮化物基衬底的GaN键合衬底的制造方法。该方法包括将单晶GaN衬底和多晶氮化物衬底加载到焊接机中; 提高粘结机的温度; 在提高温度的步骤之后，通过将单晶GaN衬底和多晶氮化物衬底压在一起，将单晶GaN衬底和多晶氮化物衬底结合在一起; 并冷却所得的键合衬底。

6. 发明授权

US08127674B2 Stamp and fabricating method thereof, thin film transistor using the stamp, and liquid crystal display device having the thin film transistor 有权
标题翻译：印模及其制造方法，使用印模的薄膜晶体管，以及具有薄膜晶体管的液晶显示装置
公开(公告)号：US08127674B2
公开(公告)日：2012-03-06
申请号：US11444182
申请日：2006-05-31
申请人： Bo Hyun Lee , Gee Sung Chae
发明人： Bo Hyun Lee , Gee Sung Chae
IPC分类号： B41L47/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , G02F2001/136295 , G02F2202/36 , G03G13/26 , G03G13/28 , G03G13/283 , G03G13/286 , H01L27/124 , H01L27/1292
摘要： Provided are a method of fabricating a stamp, a thin film transistor and a liquid crystal display device using the same. The stamp has an improved contact property with respect to a substrate. A charged zone is formed on the substrate using the stamp, and nano material charged with opposite charges to those of the charged zone is coated or plated to form a self-assembled monolayer (SAM). Therefore, the thin film transistor and the liquid crystal display device can have precise nano patterns, thereby improving the performance of the device.
摘要翻译：提供一种制造印模，薄膜晶体管和使用该印模的液晶显示装置的方法。印模相对于基材具有改善的接触性。使用印模在基板上形成带电区域，并且对与带电区域的电荷相反的电荷填充纳米材料，以形成自组装单层（SAM）。因此，薄膜晶体管和液晶显示装置可以具有精确的纳米图案，从而提高装置的性能。

7. 发明授权

US08030141B2 Thin film transistor and method for fabricating the same, and liquid crystal display device and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法以及液晶显示装置及其制造方法
公开(公告)号：US08030141B2
公开(公告)日：2011-10-04
申请号：US12872752
申请日：2010-08-31
申请人： Bo Hyun Lee , Tae Hyoung Moon , Jae Hyun Kim
发明人： Bo Hyun Lee , Tae Hyoung Moon , Jae Hyun Kim
IPC分类号： H01L21/84
CPC分类号： H01L27/127 , B82Y10/00 , H01L27/1214 , H01L27/1222 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/66969 , H01L29/78681 , H01L29/7869 , H01L29/78696 , H01L51/0048 , H01L51/0545 , Y10S977/883
摘要： A thin film transistor (TFT) including a nanowire semiconductor layer having nanowires aligned in one direction in a channel region is disclosed. The nanowire semiconductor layer is selectively formed in the channel region. A method for fabricating the TFT, a liquid crystal display (LCD) device using the TFT, and a method for manufacturing the LCD device are also disclosed. The TFT fabricating method includes forming alignment electrodes on the insulating film such that the alignment electrodes face each other, to define a channel region, forming an organic film, to expose the channel region, coating a nanowire-dispersed solution on an entire surface of a substrate including the organic film, forming a nanowire semiconductor layer in the channel region by generating an electric field between the alignment electrodes such that nanowires of the nanowire semiconductor layer are aligned in a direction, and removing the organic film.
摘要翻译：公开了一种薄膜晶体管（TFT），其包括在沟道区域中沿一个方向排列的纳米线的纳米线半导体层。纳米线半导体层选择性地形成在沟道区中。还公开了TFT的制造方法，使用该TFT的液晶显示（LCD）装置及其制造方法。 TFT制造方法包括在绝缘膜上形成取向电极，使得取向电极彼此面对，以限定沟道区域，形成有机膜以暴露沟道区域，在纳米线分散溶液的整个表面上涂布纳米线分散溶液基板，其包括有机膜，通过在取向电极之间产生电场，使纳米线半导体层的纳米线沿一个方向排列而形成纳米线半导体层，并移除有机膜。

8. 发明申请

US20070165181A1 Apparatus for fabricating flat panel display device and method for fabricating thereof 有权
标题翻译：平板显示装置的制造装置及其制造方法
公开(公告)号：US20070165181A1
公开(公告)日：2007-07-19
申请号：US11454976
申请日：2006-06-19
申请人： Jin Wuk Kim , Bo Hyun Lee
发明人： Jin Wuk Kim , Bo Hyun Lee
IPC分类号： G02F1/13 , G09G3/20
CPC分类号： H01L27/124 , H01L27/1292
摘要： An apparatus for fabricating a flat panel display device including a preparation unit to form a thin film layer and a etch-resist on a substrate and a hard mold to mold the etch-resist, the hard mold including a back plate and a molding pattern.
摘要翻译：一种用于制造平板显示装置的装置，包括在基板上形成薄膜层和抗蚀刻剂的制备单元和用于模制抗蚀剂的硬模具，硬模具包括背板和模制图案。

9. 发明授权

US07842560B2 Method of manufacturing thin film transistor and method of manufacturing liquid crystal display device using the same 有权
标题翻译：制造薄膜晶体管的方法及使用其制造液晶显示装置的方法
公开(公告)号：US07842560B2
公开(公告)日：2010-11-30
申请号：US12000078
申请日：2007-12-07
申请人： Bo Hyun Lee , Tae Hyoung Moon
发明人： Bo Hyun Lee , Tae Hyoung Moon
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/66742
摘要： A method of manufacturing a thin film transistor includes: forming a gate insulating layer on a substrate having a gate electrode; forming a semiconductor layer of nanomaterial on the gate insulating layer; forming a source electrode and a drain electrode on the gate insulating layer; and applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial.
摘要翻译：制造薄膜晶体管的方法包括：在具有栅电极的基板上形成栅极绝缘层; 在栅极绝缘层上形成纳米材料的半导体层; 在所述栅极绝缘层上形成源电极和漏电极; 以及向源电极和漏电极施加电压以布置纳米材料的方向。

10. 发明申请

US20110237010A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FABRICATING THE SAME 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20110237010A1
公开(公告)日：2011-09-29
申请号：US13155972
申请日：2011-06-08
申请人： Bo Hyun Lee , Jae Seok Heo , Woong Gi Jun
发明人： Bo Hyun Lee , Jae Seok Heo , Woong Gi Jun
IPC分类号： H01L33/62
CPC分类号： H01L27/1248 , G02F1/136227
摘要： A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs. In particular, the method comprises a thin film transistor (TFT) array comprising: forming a gate line and a gate electrode on a substrate; forming a semiconductor layer to be insulated from the gate electrode, and overlapped with a portion of the gate electrode; forming a source electrode and a drain electrode on both sides of the semiconductor layer, respectively, while forming a data line intersecting with the gate line; forming a passivation layer over an entire upper surface of the substrate including the source electrode and the drain electrode using a sol compound of a metal alkoxide having a photosensitive group X and a silicon alkoxide having a photosensitive group Y; light-exposing and developing the passivation layer to form a contact hole through which the drain electrode is exposed; and forming a pixel electrode to be in contact with the drain electrode through the contact hole.
摘要翻译：公开了薄膜晶体管（TFT）阵列基板和制造薄膜晶体管（TFT）阵列基板的方法），其中钝化层直接进行曝光和图案化处理，而不使用任何光致抗蚀剂，从而简化制造工艺并确保降低准备成本。特别地，该方法包括薄膜晶体管（TFT）阵列，其包括：在基板上形成栅极线和栅电极; 形成与所述栅电极绝缘的半导体层，并与所述栅电极的一部分重叠; 在形成与栅极线相交的数据线的同时分别在半导体层的两侧形成源电极和漏电极; 使用具有感光性基团X的金属醇盐和具有感光性基团Y的硅醇盐的溶胶化合物，在包含源电极和漏电极的基板的整个上表面上形成钝化层; 曝光和显影钝化层以形成漏电极暴露的接触孔; 以及通过接触孔形成与漏电极接触的像素电极。

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