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1. 发明授权

US07989242B2 Array substrate for liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US07989242B2
公开(公告)日：2011-08-02
申请号：US12318047
申请日：2008-12-19
申请人： Byung-Geol Kim , Gee-Sung Chae , Jae-Seok Heo , Woong-Gi Jun
发明人： Byung-Geol Kim , Gee-Sung Chae , Jae-Seok Heo , Woong-Gi Jun
IPC分类号： H01L21/336
CPC分类号： H01L27/1214 , G02F2001/136231 , G02F2001/136295 , G02F2202/38 , H01L27/1255 , H01L29/4908
摘要： An array substrate for a liquid crystal display device includes: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including an organic insulating material such that a radical of carbon chain has a composition ratio of about 8% to about 11% by weight; a semiconductor layer on the gate insulating layer over the gate electrode; a data line crossing the gate line to define a pixel region; source and drain electrodes on the semiconductor layer, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.
摘要翻译：液晶显示装置的阵列基板包括：栅极线和衬底上的栅电极，栅电极连接到栅极线; 栅极线上的栅极绝缘层和栅电极，所述栅极绝缘层包括有机绝缘材料，使得碳链的基团的组成比为约8％至约11％重量; 位于栅电极上的栅极绝缘层上的半导体层; 与栅极线交叉以限定像素区域的数据线; 源电极和漏电极，源极连接到数据线，漏电极与源电极间隔开; 数据线上的钝化层，源电极和漏电极，钝化层具有暴露漏电极的漏极接触孔; 以及钝化层上的像素电极，所述像素电极通过漏极接触孔连接到漏电极。

2. 发明申请

US20100136755A1 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20100136755A1
公开(公告)日：2010-06-03
申请号：US12656316
申请日：2010-01-25
申请人： Woong GI JUN , Gee Sung CHAE , Jae Seok HEO
发明人： Woong GI JUN , Gee Sung CHAE , Jae Seok HEO
IPC分类号： H01L21/336
CPC分类号： H01L29/78669 , H01L27/1248 , H01L27/1292 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L51/0533 , H01L51/0545
摘要： A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.
摘要翻译：在衬底上制造薄膜晶体管（TFT）的方法包括：形成栅电极; 形成与所述栅电极绝缘并与所述栅电极部分重叠的半导体层; 在栅电极和半导体层之间依次形成第一栅极绝缘层和第二栅极绝缘层，其中第一栅极绝缘层由不同于第二栅极绝缘层的材料形成，并且第一和第二栅极绝缘层中的至少一个包括溶胶 -复合; 以及在半导体层的两侧形成源极和漏极。

3. 发明授权

US07683367B2 Thin film transistor, method for fabricating the same and display device 有权
标题翻译：薄膜晶体管及其制造方法及显示装置
公开(公告)号：US07683367B2
公开(公告)日：2010-03-23
申请号：US11644981
申请日：2006-12-26
申请人： Gee Sung Chae , Jae Seok Heo , Woong Gi Jun
发明人： Gee Sung Chae , Jae Seok Heo , Woong Gi Jun
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.
摘要翻译：在衬底上制造TFT的方法包括：形成栅电极; 形成与栅电极绝缘并与栅电极部分重叠的半导体层; 在所述栅电极和所述半导体层之间形成栅极绝缘层，所述栅绝缘层包括溶胶 - 凝胶化合物; 以及在半导体层的两侧形成源极和漏极。

4. 发明申请

US20080001150A1 Thin film transistor, method for fabricating the same and display device 有权
标题翻译：薄膜晶体管及其制造方法及显示装置
公开(公告)号：US20080001150A1
公开(公告)日：2008-01-03
申请号：US11644981
申请日：2006-12-26
申请人： Gee Sung Chae , Jae Seok Heo , Woong Gi Jun
发明人： Gee Sung Chae , Jae Seok Heo , Woong Gi Jun
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.
摘要翻译：在衬底上制造TFT的方法包括：形成栅电极; 形成与栅电极绝缘并与栅电极部分重叠的半导体层; 在所述栅电极和所述半导体层之间形成栅极绝缘层，所述栅绝缘层包括溶胶 - 凝胶化合物; 以及在半导体层的两侧形成源极和漏极。

5. 发明授权

US08551825B2 Method for fabricating a thin film transistor with an organic passivation layer 有权
标题翻译：制造具有有机钝化层的薄膜晶体管的方法
公开(公告)号：US08551825B2
公开(公告)日：2013-10-08
申请号：US13155972
申请日：2011-06-08
申请人： Bo Hyun Lee , Jae Seok Heo , Woong Gi Jun
发明人： Bo Hyun Lee , Jae Seok Heo , Woong Gi Jun
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , G02F1/136227
摘要： A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs. In particular, the method comprises a thin film transistor (TFT) array comprising: forming a gate line and a gate electrode on a substrate; forming a semiconductor layer to be insulated from the gate electrode, and overlapped with a portion of the gate electrode; forming a source electrode and a drain electrode on both sides of the semiconductor layer, respectively, while forming a data line intersecting with the gate line; forming a passivation layer over an entire upper surface of the substrate including the source electrode and the drain electrode using a sol compound of a metal alkoxide having a photosensitive group X and a silicon alkoxide having a photosensitive group Y; light-exposing and developing the passivation layer to form a contact hole through which the drain electrode is exposed; and forming a pixel electrode to be in contact with the drain electrode through the contact hole.
摘要翻译：公开了薄膜晶体管（TFT）阵列基板和制造薄膜晶体管（TFT）阵列基板的方法），其中钝化层直接进行曝光和图案化处理，而不使用任何光致抗蚀剂，从而简化制造工艺并确保降低准备成本。特别地，该方法包括薄膜晶体管（TFT）阵列，其包括：在基板上形成栅极线和栅电极; 形成与所述栅电极绝缘的半导体层，并与所述栅电极的一部分重叠; 在形成与栅极线相交的数据线的同时分别在半导体层的两侧形成源电极和漏电极; 使用具有感光性基团X的金属醇盐和具有感光性基团Y的硅醇盐的溶胶化合物，在包含源电极和漏电极的基板的整个上表面上形成钝化层; 曝光和显影钝化层以形成漏电极暴露的接触孔; 以及通过接触孔形成与漏电极接触的像素电极。

6. 发明申请

US20080001151A1 Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method 有权
标题翻译：显示装置，薄膜晶体管的制造方法以及使用该方法制造薄膜晶体管阵列基板的方法
公开(公告)号：US20080001151A1
公开(公告)日：2008-01-03
申请号：US11646241
申请日：2006-12-28
申请人： Woong Gi Jun , Gee Sung Chae , Jae Scok Heo
发明人： Woong Gi Jun , Gee Sung Chae , Jae Scok Heo
IPC分类号： H01L29/04
CPC分类号： H01L29/78669 , H01L27/1248 , H01L27/1292 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L51/0533 , H01L51/0545
摘要： A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.
摘要翻译：在衬底上制造薄膜晶体管（TFT）的方法包括：形成栅电极; 形成与所述栅电极绝缘并与所述栅电极部分重叠的半导体层; 在栅电极和半导体层之间依次形成第一栅极绝缘层和第二栅极绝缘层，其中第一栅极绝缘层由不同于第二栅极绝缘层的材料形成，并且第一和第二栅极绝缘层中的至少一个包括溶胶 -复合; 以及在半导体层的两侧形成源极和漏极。

7. 发明授权

US08062924B2 Thin film transistor, method for fabricating the same and display device 有权
标题翻译：薄膜晶体管及其制造方法及显示装置
公开(公告)号：US08062924B2
公开(公告)日：2011-11-22
申请号：US12656507
申请日：2010-02-01
申请人： Gee Sung Chae , Jae Seok Heo , Woong Gi Jun
发明人： Gee Sung Chae , Jae Seok Heo , Woong Gi Jun
IPC分类号： H01L51/40
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.
摘要翻译：在衬底上制造TFT的方法包括：形成栅电极; 形成与栅电极绝缘并与栅电极部分重叠的半导体层; 在所述栅电极和所述半导体层之间形成栅极绝缘层，所述栅绝缘层包括溶胶 - 凝胶化合物; 以及在半导体层的两侧形成源极和漏极。

8. 发明申请

US20100136756A1 Thin film transistor, method for fabricating the same and display device 有权
公开(公告)号：US20100136756A1
公开(公告)日：2010-06-03
申请号：US12656507
申请日：2010-02-01
申请人： Gee Sung Chae , Jae Seok Heo , Woong Gi Jun
发明人： Gee Sung Chae , Jae Seok Heo , Woong Gi Jun
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.

9. 发明申请

US20080157069A1 Thin film transistor for liquid crystal display device 审中-公开
标题翻译：液晶显示装置薄膜晶体管
公开(公告)号：US20080157069A1
公开(公告)日：2008-07-03
申请号：US12003179
申请日：2007-12-20
申请人： Jae Seok Heo , Woong Gi Jun , Byung Geol Kim
发明人： Jae Seok Heo , Woong Gi Jun , Byung Geol Kim
IPC分类号： H01L51/05 , H01L29/786
CPC分类号： H01L21/02126 , H01L21/02175 , H01L21/3124 , H01L27/1214 , H01L29/4908 , H01L51/0525
摘要： A thin film transistor for an LCD device is disclosed, which comprises a gate electrode formed on a substrate; a gate insulation film formed of a high dielectric constant insulator having a bond structure of functional group, metal oxide, silicon and oxygen; and source and drain electrodes formed on the gate insulation film.
摘要翻译：公开了一种用于LCD器件的薄膜晶体管，其包括形成在衬底上的栅电极; 由具有官能团，金属氧化物，硅和氧的键合结构的高介电常数绝缘体形成的栅极绝缘膜; 以及形成在栅极绝缘膜上的源极和漏极。

10. 发明授权

US08659094B2 Array substrate for liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US08659094B2
公开(公告)日：2014-02-25
申请号：US13113922
申请日：2011-05-23
申请人： Byung-Geol Kim , Gee-Sung Chae , Jae-Seok Heo , Woong-Gi Jun
发明人： Byung-Geol Kim , Gee-Sung Chae , Jae-Seok Heo , Woong-Gi Jun
IPC分类号： H01L29/786 , H01L27/105
CPC分类号： H01L27/1214 , G02F2001/136231 , G02F2001/136295 , G02F2202/38 , H01L27/1255 , H01L29/4908
摘要： An array substrate for a liquid crystal display device includes: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including an organic insulating material such that a radical of carbon chain has a composition ratio of about 8% to about 11% by weight; a semiconductor layer on the gate insulating layer over the gate electrode; a data line crossing the gate line to define a pixel region; source and drain electrodes on the semiconductor layer, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.
摘要翻译：液晶显示装置的阵列基板包括：栅极线和衬底上的栅电极，栅电极连接到栅极线; 栅极线上的栅极绝缘层和栅电极，所述栅极绝缘层包括有机绝缘材料，使得碳链的基团的组成比为约8％至约11％重量; 位于栅电极上的栅极绝缘层上的半导体层; 与栅极线交叉以限定像素区域的数据线; 源电极和漏电极，源极连接到数据线，漏电极与源电极间隔开; 数据线上的钝化层，源电极和漏电极，钝化层具有暴露漏电极的漏极接触孔; 以及钝化层上的像素电极，所述像素电极通过漏极接触孔连接到漏电极。

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