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1. 发明授权

US08780532B2 Condenser element, solid electrolytic capacitor and method for manufacturing the same 有权
标题翻译：电容器元件，固体电解电容器及其制造方法
公开(公告)号：US08780532B2
公开(公告)日：2014-07-15
申请号：US13034026
申请日：2011-02-24
申请人： Jae Kwang Kim , Jun Suk Jung , Chang Sub Song
发明人： Jae Kwang Kim , Jun Suk Jung , Chang Sub Song
IPC分类号： H01G9/04 , H01G5/013 , H01G9/00 , H01G4/228
CPC分类号： H01G9/012 , H01G9/0425 , H01G9/15 , Y10T29/417
摘要： There is provided a solid electrolytic capacitor, including: a condenser element including a chip body molded by sintering, a positive electrode terminal contact layer formed on one area of the chip body to be exposed to the outside, an insulating layer formed in the entire area or some area other than one area in which the positive electrode terminal contact layer is formed, and a negative electrode layer stacked on the insulating layer; a negative electrode extracting layer stacked to be electrically connected with the negative electrode layer; a negative electrode terminal stacked on the negative electrode extracting layer; a positive electrode terminal stacked on the positive electrode terminal contact layer.
摘要翻译：提供了一种固体电解电容器，包括：包括通过烧结成型的芯片体的电容器元件，形成在待暴露于外部的芯片体的一个区域上的正极端子接触层，形成在整个区域中的绝缘层或形成有正极端子接触层的一个区域以外的某些区域和堆叠在绝缘层上的负极层; 堆叠成与负极层电连接的负极提取层; 堆叠在负极提取层上的负极端子; 正电极端子堆叠在正极端子接触层上。

2. 发明申请

US20120120554A1 CONDENSER ELEMENT, SOLID ELECTROLYTIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：冷凝器元件，固体电解电容器及其制造方法
公开(公告)号：US20120120554A1
公开(公告)日：2012-05-17
申请号：US13034026
申请日：2011-02-24
申请人： Jae Kwang Kim , Jun Suk Jung , Chang Sub Song
发明人： Jae Kwang Kim , Jun Suk Jung , Chang Sub Song
IPC分类号： H01G9/004
CPC分类号： H01G9/012 , H01G9/0425 , H01G9/15 , Y10T29/417
摘要： There is provided a solid electrolytic capacitor, including: a condenser element including a chip body molded by sintering, a positive electrode terminal contact layer formed on one area of the chip body to be exposed to the outside, an insulating layer formed in the entire area or some area other than one area in which the positive electrode terminal contact layer is formed, and a negative electrode layer stacked on the insulating layer; a negative electrode extracting layer stacked to be electrically connected with the negative electrode layer; a negative electrode terminal stacked on the negative electrode extracting layer; a positive electrode terminal stacked on the positive electrode terminal contact layer.
摘要翻译：提供了一种固体电解电容器，包括：包括通过烧结成型的芯片体的电容器元件，形成在待暴露于外部的芯片体的一个区域上的正极端子接触层，形成在整个区域中的绝缘层或形成有正极端子接触层的一个区域以外的某些区域和堆叠在绝缘层上的负极层; 堆叠成与负极层电连接的负极提取层; 堆叠在负极提取层上的负极端子; 正电极端子堆叠在正极端子接触层上。

3. 发明申请

US20120182668A1 SOLID ELECTROLYTIC CAPACITOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：固体电解电容器及其制造方法
公开(公告)号：US20120182668A1
公开(公告)日：2012-07-19
申请号：US13351941
申请日：2012-01-17
申请人： Jae Kwang KIM , Jun Suk Jung , Chang Sub Song
发明人： Jae Kwang KIM , Jun Suk Jung , Chang Sub Song
IPC分类号： H01G9/08 , C25D5/02 , H01G9/15
CPC分类号： H01G9/15 , H01G9/012
摘要： A solid electrolytic capacitor and manufacturing method, in which an oxidation-resistant coating layer configured to surround the surface of a terminal reinforcing material underlies a capacitor element. The solid electrolytic capacitor includes a capacitor element having a positive polarity internally and having one end to which an anode wire is inserted; a cathode leading-out layer; a pair of terminal reinforcing materials coupled with both bottom sides of the capacitor element; an oxidation resistant coating layer surrounding the surface of the pair of terminal reinforcing materials; a mold part surrounding the outer periphery of the capacitor element, while exposing the other end of the anode wire, the other side of the cathode leading-out layer, and the lower surfaces of the pair of terminal reinforcing materials; and anode and cathode terminals formed on both sides of the mold part and the lower surfaces of the terminal reinforcing materials.
摘要翻译：一种固体电解电容器及其制造方法，其中构成为围绕端子增强材料的表面的抗氧化涂层位于电容器元件的下方。固体电解电容器包括在内部具有正极性并且具有插入阳极线的一端的电容器元件; 阴极引出层; 与电容器元件的两个底侧耦合的一对端子增强材料; 围绕所述一对端子增强材料的表面的抗氧化涂层; 围绕所述电容器元件的外周的模具部件，同时暴露所述阳极线的另一端，所述阴极引出层的另一侧以及所述一对端子增强材料的下表面; 并且阳极和阴极端子形成在模具部件的两侧和端子增强材料的下表面上。

4. 发明申请

US20110127689A1 APPARATUS FOR MANUFACTURING ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT 审中-公开
标题翻译：制造电子元件的装置及制造电子元件的方法
公开(公告)号：US20110127689A1
公开(公告)日：2011-06-02
申请号：US12768480
申请日：2010-04-27
申请人： Jae Kwang KIM , Chang Sub Song , Jun Suk Jung
发明人： Jae Kwang KIM , Chang Sub Song , Jun Suk Jung
IPC分类号： B29C45/14 , B28B7/36
CPC分类号： H01L21/566 , H01L2924/0002 , H01L2924/00
摘要： An apparatus for manufacturing an electronic component includes: upper and lower metal molds, at least one of which being formed as a porous member on which an electronic component is mounted, including an internal space for accommodating the electronic component therein; a release film providing unit providing a release film to the internal space of the upper and lower metal molds; and a molding resin providing unit providing a molding resin to the internal space to allow the electronic component to be injection-molded.
摘要翻译：一种用于制造电子部件的装置，包括：上下金属模，其中至少一个模具形成为安装电子部件的多孔部件，包括用于容纳电子部件的内部空间; 释放膜提供单元，其向所述上下金属模具的内部空间提供释放膜; 以及模塑树脂提供单元，其向内部空间提供模制树脂以允许电子部件被注射成型。

5. 发明授权

US06229179B1 Intelligent power integrated circuit 有权
标题翻译：智能电源集成电路
公开(公告)号：US06229179B1
公开(公告)日：2001-05-08
申请号：US09421292
申请日：1999-10-20
申请人： Chang-Sub Song , Hyeong-Woo Jang , Sin-Kook Jang
发明人： Chang-Sub Song , Hyeong-Woo Jang , Sin-Kook Jang
IPC分类号： H01L2701
CPC分类号： H01L21/76264 , H01L21/76275 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1203 , H01L2924/00011 , H01L2224/80001
摘要： A semiconductor device, more particularly, an intelligent power integrated circuit formed on a substrate where a power device and a control device are formed is provided. The intelligent power integrated circuit includes a handling substrate for a first conductivity type, a substrate for a power device of a second conductivity type where a first buffer layer of a concentration higher than that of the substrate for the power device is formed around a surface contacting with the handling substrate, a substrate for a control device formed on an insulating layer partially formed on the substrate for the power device, a control device formed on the substrate for the control device, and a power device vertically formed through the substrate for the power device and the handling substrate.
摘要翻译：提供一种半导体器件，更具体地，提供形成在形成功率器件和控制器件的基板上的智能功率集成电路。智能电力集成电路包括用于第一导电类型的处理衬底，用于第二导电类型的功率器件的衬底，其中第一缓冲层的浓度高于用于功率器件的衬底的第一缓冲层围绕表面接触形成与处理基板一起，形成在部分地形成在用于功率器件的基板上的绝缘层上的控制装置的基板，形成在用于控制装置的基板上的控制装置，以及通过基板垂直形成的用于电力的功率装置装置和处理基板。

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