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1. 发明授权

US09105864B2 Organic light-emitting display device and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US09105864B2
公开(公告)日：2015-08-11
申请号：US13833818
申请日：2013-03-15
申请人： Chaun-Gi Choi
发明人： Chaun-Gi Choi
IPC分类号： H01G4/33 , H01G4/08 , H01L51/52 , H01L27/12 , H01L27/32
CPC分类号： H01L51/5203 , H01L27/1225 , H01L27/1255 , H01L27/3262 , H01L27/3265 , H01L27/3279 , H01L2227/323
摘要： An organic light-emitting display device may include a plurality of scan lines, a plurality of data lines, and a plurality of pixels located at an intersection region of the scan line and the data line, wherein the organic light-emitting display device includes a thin film transistor including a gate electrode on a different layer than a scan line, an active layer on the gate electrode, and source and drain electrodes that are in contact with source and drain regions of the active layer, and a capacitor including a first capacitor electrode on the same layer as the scan line, a second capacitor electrode on the gate electrode, and a third electrode on the same layer as the source and drain electrodes.
摘要翻译：有机发光显示装置可以包括位于扫描线和数据线的交叉区域的多条扫描线，多条数据线和多个像素，其中有机发光显示装置包括：薄膜晶体管，其包括与扫描线不同的栅极，栅电极上的有源层，以及与有源层的源极和漏极区域接触的源极和漏极，以及包括第一电容器电极在与扫描线相同的层上，栅电极上的第二电容器电极和与源电极和漏电极相同的层上的第三电极。

2. 发明授权

US08901563B2 Organic light-emitting display device and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08901563B2
公开(公告)日：2014-12-02
申请号：US13356923
申请日：2012-01-24
申请人： Sang-Il Park , Chaun-Gi Choi , Tae-Kyung Ahn
发明人： Sang-Il Park , Chaun-Gi Choi , Tae-Kyung Ahn
IPC分类号： H01L51/52 , H01L27/12 , H01L27/32
CPC分类号： H01L27/3262 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L51/5212 , H01L2227/323
摘要： An organic light-emitting display device includes an organic light-emitting device, a thin film transistor (TFT) electrically connected to the organic light-emitting device, and a capacitor electrically connected to the organic light-emitting device, the capacitor including a first electrode layer and a second electrode layer opposite to each other, and a first insulating layer interposed as a single layer between the first electrode layer and the second electrode layer.
摘要翻译：有机发光显示装置包括有机发光装置，与有机发光装置电连接的薄膜晶体管（TFT）和电连接到有机发光装置的电容器，所述电容器包括第一电极层和彼此相对的第二电极层，以及在第一电极层和第二电极层之间作为单层插入的第一绝缘层。

3. 发明申请

US20130001566A1 BACK PLANE FOR USE IN FLAT PANEL DISPLAYS AND METHOD OF MANUFACTURING THE BACK PLANE 审中-公开
标题翻译：在平板显示器中使用的背板和制造背板的方法
公开(公告)号：US20130001566A1
公开(公告)日：2013-01-03
申请号：US13460354
申请日：2012-04-30
申请人： Jong-Han Jeong , Chaun-Gi Choi
发明人： Jong-Han Jeong , Chaun-Gi Choi
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L27/3248 , H01L27/3258 , H01L51/56
摘要： In one aspect, a back plane for use in flat panel displays is provided. The back plane may include a substrate; an auxiliary layer; a source electrode and a drain electrode; an active layer; a first insulation layer; a gate electrode; and a second insulation layer.
摘要翻译：在一个方面，提供了一种用于平板显示器的背板。背面可以包括基底; 辅助层; 源电极和漏电极; 活性层第一绝缘层; 栅电极; 和第二绝缘层。

4. 发明申请

US20120220077A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
公开(公告)号：US20120220077A1
公开(公告)日：2012-08-30
申请号：US13462535
申请日：2012-05-02
申请人： Jae-Heung HA , Young-Woo SONG , Jong-Hyuk LEE , Jong-Han JEONG , Min-Kyu KIM , Yeon-Gon MO , Jae-Kyeong JEONG , Hyun-Joong CHUNG , Kwang-Suk KIM , Hui-Won YANG , Chaun-Gi CHOI
发明人： Jae-Heung HA , Young-Woo SONG , Jong-Hyuk LEE , Jong-Han JEONG , Min-Kyu KIM , Yeon-Gon MO , Jae-Kyeong JEONG , Hyun-Joong CHUNG , Kwang-Suk KIM , Hui-Won YANG , Chaun-Gi CHOI
IPC分类号： H01L21/336
CPC分类号： H01L29/7869
摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

5. 发明授权

US08178884B2 Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：包括化合物半导体氧化物的薄膜晶体管，其制造方法和具有该半导体氧化物的平板显示装置
公开(公告)号：US08178884B2
公开(公告)日：2012-05-15
申请号：US12393422
申请日：2009-02-26
申请人： Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
发明人： Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036 , H01L29/10 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L31/112 , H01L29/12 , H01L29/26 , H01L31/12 , H01L33/00 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7869
摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
摘要翻译：薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

6. 发明授权

US06623862B2 Functional film having optical and electrical properties 失效
公开(公告)号：US06623862B2
公开(公告)日：2003-09-23
申请号：US09994786
申请日：2001-11-28
申请人： Chaun-gi Choi , Young-rag Do , Joon-bae Lee , Chang-won Park
发明人： Chaun-gi Choi , Young-rag Do , Joon-bae Lee , Chang-won Park
IPC分类号： B32B1706
CPC分类号： C03C17/225 , C03C17/23 , C03C17/36 , C03C17/3607 , C03C17/3626 , C03C17/3642 , C03C17/3676 , C03C17/3694 , C03C2217/91 , C23C14/027 , C23C14/0617 , C23C14/0652 , C23C14/081 , C23C14/10 , G02B1/10 , Y10T428/24942
摘要： A functional film including a transition layer including a first constituent selected from aluminum and silicon and at least one second constituent selected from oxygen and nitrogen, the first and second constituents having gradual content gradients according to a thickness of the functional film.

7. 发明授权

US06579624B2 Functional film having optical and electrical properties 失效
公开(公告)号：US06579624B2
公开(公告)日：2003-06-17
申请号：US09994623
申请日：2001-11-28
申请人： Chaun-gi Choi , Young-rag Do , Joon-bae Lee , Chang-won Park
发明人： Chaun-gi Choi , Young-rag Do , Joon-bae Lee , Chang-won Park
IPC分类号： B32B514
CPC分类号： C23C14/027 , C23C14/10 , C23C14/352 , G02B1/10 , H05K9/0096 , Y10T428/1059 , Y10T428/1068 , Y10T428/12458 , Y10T428/12583 , Y10T428/1259 , Y10T428/12597 , Y10T428/12604 , Y10T428/12611 , Y10T428/26
摘要： A functional film includes a transition layer having a first constituent having SiO as a dielectric material and at least one second constituent selected from aluminum (Al), silver (Ag), silicon (Si), germanium (Ge), yttrium (Y), zinc (Zn), zirconium (Zr), tungsten (W) and tantalum (Ta). The first and second constituents have corresponding gradual content gradients according to a thickness of the functional film.

8. 发明授权

US08618546B2 Backplane for flat panel display apparatus, flat panel display apparatus, and method of manufacturing the backplane 有权
公开(公告)号：US08618546B2
公开(公告)日：2013-12-31
申请号：US13444736
申请日：2012-04-11
申请人： Jong-Han Jeong , Chaun-Gi Choi
发明人： Jong-Han Jeong , Chaun-Gi Choi
IPC分类号： H01J1/62
CPC分类号： H01L29/66742 , H01L27/1225 , H01L27/1255 , H01L2227/323
摘要： A backplane includes: a substrate, a pixel electrode, which includes a transparent conductive material, on the substrate, a capacitor first electrode formed on the same layer as the pixel electrode, a first protection layer covering the capacitor first electrode and an upper edge of the pixel electrode, a gate electrode of a thin film transistor (TFT) formed on the first protection layer, a capacitor second electrode formed on the same layer as the gate electrode, a first insulating layer that covers the gate electrode and the capacitor second electrode, a semiconductor layer that is formed on the first insulating layer and includes a transparent conductive material, a second insulating layer covering the semiconductor layer, source and drain electrodes of the TFT that are formed on the second insulating layer, and a third insulating layer that covers the source and drain electrodes and exposes the pixel electrode.

9. 发明申请

US20130001602A1 ORGANIC LIGHT EMITTING DEVICE, ORGANIC LIGHT EMITTING DISPLAY APPARATUS, AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：有机发光装置，有机发光显示装置及其制造方法
公开(公告)号：US20130001602A1
公开(公告)日：2013-01-03
申请号：US13454193
申请日：2012-04-24
申请人： Sang-IL PARK , Min-Kyu Kim , Chaun-Gi Choi , Kwang-Suk Kim
发明人： Sang-IL PARK , Min-Kyu Kim , Chaun-Gi Choi , Kwang-Suk Kim
IPC分类号： H01L33/62
CPC分类号： H01L27/3244 , H01L51/5265 , H01L2251/5369
摘要： An organic light emitting display device includes a buffer layer on a substrate, the buffer layer including nano-particles, a pixel electrode on the buffer layer, an opposite electrode on the pixel electrode and facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode.
摘要翻译：有机发光显示装置包括：衬底上的缓冲层，包含纳米颗粒的缓冲层，缓冲层上的像素电极，像素电极上的相对电极，并且与像素电极相对的有机发射层，像素电极和相对电极。

10. 发明申请

US20120298984A1 BACK PANEL FOR FLAT PANEL DISPLAY APPARATUS, FLAT PANEL DISPLAY APPARATUS COMPRISING THE SAME, AND METHOD OF MANUFACTURING THE BACK PANEL 有权
标题翻译：用于平板显示装置的后面板，包括其的平面板显示装置和制造后面板的方法
公开(公告)号：US20120298984A1
公开(公告)日：2012-11-29
申请号：US13443457
申请日：2012-04-10
申请人： Sang-Il PARK , Chaun-Gi CHOI , Tae-Kyung AHN
发明人： Sang-Il PARK , Chaun-Gi CHOI , Tae-Kyung AHN
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L27/1288 , H01L27/1225 , H01L27/3248 , H01L27/3251
摘要： A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide.
摘要翻译：一种用于平板显示装置的后面板包括：设置在基板上的像素电极; 设置在所述基板上的薄膜晶体管（TFT）的第一栅极电极层; 第二栅极电极层，设置在所述第一栅极电极层上并且包括半导体材料; 第三栅电极层，设置在所述第二栅电极层上并且包括金属材料; 设置在所述第三栅电极层上的第一绝缘层; 设置在所述第一绝缘层上并包括透明导电氧化物半导体的有源层; 设置在所述有源层上的第二绝缘层; 通过第二绝缘层连接到有源层的源极和漏极; 以及覆盖源极和漏极的第三绝缘层。第一栅电极层和像素电极包括透明导电氧化物。

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