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1. 发明授权

US08772845B2 Technique for smoothing an interface between layers of a semiconductor device 有权
标题翻译：用于平滑半导体器件的层之间的界面的技术
公开(公告)号：US08772845B2
公开(公告)日：2014-07-08
申请号：US13240714
申请日：2011-09-22
申请人： Chih-Ming Chen , Cheng-Yuan Tsai , Chung-Yi Yu , Kai-Wen Cheng , Kuo-Ming Wu
发明人： Chih-Ming Chen , Cheng-Yuan Tsai , Chung-Yi Yu , Kai-Wen Cheng , Kuo-Ming Wu
IPC分类号： H01L21/02
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a composite layer disposed over the pinned layer, the composite layer having a magnetic material randomly distributed in a non-magnetic material; a barrier layer disposed on the composite layer; a free layer disposed over the barrier layer; and a second electrode disposed over the free layer.
摘要翻译：本公开提供一种半导体存储器件。该装置包括具有反铁磁材料并设置在第一电极上的钉扎层; 设置在钉扎层上方的钉扎层; 复合层，其设置在所述被钉扎层上方，所述复合层具有随机分布在非磁性材料中的磁性材料; 设置在所述复合层上的阻挡层; 设置在阻挡层上的自由层; 以及设置在所述自由层上方的第二电极。

2. 发明申请

US20130249466A1 Photovoltaic System Having Burp Charger Performing Concept of Energy Treasuring and Recovery and Charging Method Thereof 审中-公开
标题翻译：具有打击充电器的光伏系统执行能量收集和回收的概念及其充电方法
公开(公告)号：US20130249466A1
公开(公告)日：2013-09-26
申请号：US13619599
申请日：2012-09-14
申请人： Guan-Chyun Hsieh , Hung-I Hsieh , Cheng-Yuan Tsai , Chun-Kong Chan
发明人： Guan-Chyun Hsieh , Hung-I Hsieh , Cheng-Yuan Tsai , Chun-Kong Chan
IPC分类号： H02J7/00
CPC分类号： H02J7/0013 , H02J7/35 , H02J2007/105 , Y02E10/566
摘要： The Configurations of photovoltaic system and charging methods thereof are provided. The proposed photovoltaic system includes a first battery receiving a first pulse train to proceed a first charge during a first time period and engaging in an intense discharge to generate a second pulse train during a first portion of a second time period, a second battery receiving the first pulse train to proceed a second charge during the second time period, a third battery engaging in a third charge via the second pulse train during the first portion of the second time period, and a charge management controller controlling the first charge and the intense discharge of the first battery, the second charge of the second battery, and the third charge of the third battery.
摘要翻译：提供了光伏系统的配置及其充电方法。所提出的光伏系统包括第一电池，其接收第一脉冲序列以在第一时间段内进行第一充电并且在第二时间段的第一部分期间进行强放电以产生第二脉冲串，第二电池接收第一脉冲串，在第二时间段期间进行第二次充电，在第二时间段的第一部分期间经由第二脉冲串接合第三次充电的第三电池，以及控制第一次充电和强放电的充电管理控制器的第一电池，第二电池的第二次充电以及第三电池的第三次充电。

3. 发明申请

US20130032908A1 Hybrid Film for Protecting MTJ Stacks of MRAM 有权
标题翻译：用于保护MRAM的MTJ堆叠的混合胶片
公开(公告)号：US20130032908A1
公开(公告)日：2013-02-07
申请号：US13198165
申请日：2011-08-04
申请人： Bang-Tai Tang , Cheng-Yuan Tsai
发明人： Bang-Tai Tang , Cheng-Yuan Tsai
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/08 , H01L43/12
摘要： A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form a MTJ stack, and forming a first dielectric cap layer over a top surface and on a sidewall of the MTJ stack. The step of patterning and the step of forming the first dielectric cap layer are in-situ formed in a same vacuum environment. A second dielectric cap layer is formed over and contacting the first dielectric cap layer.
摘要翻译：一种方法包括图案化多个磁性隧道结（MTJ）层以形成MTJ堆叠，以及在MTJ堆叠的顶表面和侧壁上形成第一电介质盖层。图案化步骤和形成第一电介质盖层的步骤在相同的真空环境中原位形成。第二电介质盖层形成在第一电介质盖层上并与第一电介质盖层接触。

4. 发明授权

US08048813B2 Method of reducing delamination in the fabrication of small-pitch devices 有权
标题翻译：减少小间距装置制造中分层的方法
公开(公告)号：US08048813B2
公开(公告)日：2011-11-01
申请号：US12326099
申请日：2008-12-01
申请人： Chih-Yu Lai , Cheng-Ta Wu , Neng-Kuo Chen , Cheng-Yuan Tsai
发明人： Chih-Yu Lai , Cheng-Ta Wu , Neng-Kuo Chen , Cheng-Yuan Tsai
IPC分类号： H01L21/302
CPC分类号： H01L21/0337
摘要： A method of forming an integrated circuit structure includes providing a substrate; forming a first hard mask layer over the substrate; forming a second hard mask layer over the first hard mask layer; patterning the second hard mask layer to form a hard mask; and, after the step of patterning the second hard mask layer, baking the substrate, the first hard mask layer, and the hard mask. After the step of baking, a spacer layer is formed, which includes a first portion on a top of the hard mask, and a second portion and a third portion on opposite sidewalls of the hard mask. The method further includes removing the first portion of the spacer layer; removing the hard mask; and using the second portion and the third portion of the spacer layer as masks to pattern the first hard mask layer.
摘要翻译：形成集成电路结构的方法包括提供基板; 在衬底上形成第一硬掩模层; 在所述第一硬掩模层上形成第二硬掩模层; 图案化第二硬掩模层以形成硬掩模; 并且在图案化第二硬掩模层的步骤之后，烘烤基板，第一硬掩模层和硬掩模。在烘烤步骤之后，形成间隔层，其包括在硬掩模的顶部上的第一部分和硬掩模的相对侧壁上的第二部分和第三部分。该方法还包括去除间隔层的第一部分; 去除硬面膜; 并且使用间隔层的第二部分和第三部分作为掩模来对第一硬掩模层进行图案化。

5. 发明授权

US07892929B2 Shallow trench isolation corner rounding 有权
标题翻译：浅沟隔离角四舍五入
公开(公告)号：US07892929B2
公开(公告)日：2011-02-22
申请号：US12173263
申请日：2008-07-15
申请人： Neng-Kuo Chen , Kuo-Hwa Tzeng , Cheng-Yuan Tsai , Jeffrey Junhao Xu
发明人： Neng-Kuo Chen , Kuo-Hwa Tzeng , Cheng-Yuan Tsai , Jeffrey Junhao Xu
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/76232
摘要： A method for rounding the corners of a shallow trench isolation is provided. A preferred embodiment comprises filling the trench with a dielectric and recessing the dielectric to expose a portion of the sidewalls of the trench adjacent to the surface of the substrate. The substrate is then annealed in a hydrogen ambient, which rounds the corners of the shallow trench isolation through silicon migration.
摘要翻译：提供了一种用于对浅沟槽隔离件的角进行倒角的方法。优选实施例包括用电介质填充沟槽并使电介质凹陷以暴露邻近衬底表面的沟槽侧壁的一部分。然后将衬底在氢环境中退火，氢环境通过硅迁移使浅沟槽隔离的角落圆。

6. 发明申请

US20100022084A1 Method for Forming Interconnect Structures 有权
标题翻译：形成互连结构的方法
公开(公告)号：US20100022084A1
公开(公告)日：2010-01-28
申请号：US12179991
申请日：2008-07-25
申请人： Neng-Kuo Chen , Kuo-Hwa Tzeng , Cheng-Yuan Tsai
发明人： Neng-Kuo Chen , Kuo-Hwa Tzeng , Cheng-Yuan Tsai
IPC分类号： H01L21/4763
CPC分类号： H01L21/7681 , H01L21/02134 , H01L21/02137 , H01L21/02164 , H01L21/022 , H01L21/02203 , H01L21/02274 , H01L21/31608 , H01L21/76801
摘要： Methods of fabricating interconnect structures in a semiconductor integrated circuit (IC) are presented. A preferred embodiment comprises forming interconnect lines and vias through a dual-damascenes process. It includes forming a via dielectric layer, an etch stop layer directly over the via dielectric layer, and a trench dielectric layer over the etch stop layer. The etch stop layer is patterned through a first photolithography and etch process to form openings in the etch stop layer, prior to the formation of the trench dielectric layer. A second photolithography and etch process is performed after formation of the trench dielectric layer to create trench openings in the trench dielectric layer and via openings in the via dielectric layer, where the patterned etch stop layer acts as a hard-mask in forming vias in the via dielectric layer.
摘要翻译：提出了在半导体集成电路（IC）中制造互连结构的方法。优选实施例包括通过双重镶嵌工艺形成互连线和通孔。它包括形成通孔电介质层，直接在通孔电介质层上的蚀刻停止层，以及在蚀刻停止层上的沟槽电介质层。在形成沟槽电介质层之前，蚀刻停止层通过第一光刻和蚀刻工艺图案化以在蚀刻停止层中形成开口。在形成沟槽电介质层之后执行第二光刻和蚀刻工艺，以在沟槽电介质层和通孔电介质层中的通孔开口形成沟槽开口，其中图案化蚀刻停止层在形成通孔中用作硬掩模通过电介质层。

7. 发明申请

US20090127648A1 Hybrid Gap-fill Approach for STI Formation 审中-公开
标题翻译：用于STI形成的混合间隙填充方法
公开(公告)号：US20090127648A1
公开(公告)日：2009-05-21
申请号：US11969168
申请日：2008-01-03
申请人： Neng-Kuo Chen , Chih-Hsiang Chang , Cheng-Yuan Tsai , Wei-Chung Wang , Chun-Te Li
发明人： Neng-Kuo Chen , Chih-Hsiang Chang , Cheng-Yuan Tsai , Wei-Chung Wang , Chun-Te Li
IPC分类号： H01L23/58 , H01L21/762
CPC分类号： H01L21/76232
摘要： A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a first deposition step to fill a first dielectric material into the opening using a first deposition method. The first deposition method has a bottom deposition rate substantially greater than a sidewall deposition rate. The method further includes isotropically etching the first dielectric material, wherein at least a bottom portion of the first dielectric material remains after the etching; and performing a second deposition step to fill a remaining portion of the opening with a second dielectric material. The first deposition method may be a high-density plasma chemical vapor deposition. The second deposition method may be a high-aspect ratio process.
摘要翻译：提供了形成浅沟槽隔离区域的方法。该方法包括：提供包括顶表面的半导体衬底; 形成从所述顶表面延伸到所述半导体衬底中的开口; 执行第一沉积步骤以使用第一沉积方法将第一介电材料填充到所述开口中。第一沉积方法具有基本上大于侧壁沉积速率的底部沉积速率。该方法还包括各向同性蚀刻第一介电材料，其中在蚀刻之后第一介电材料的至少底部部分保留; 以及执行第二沉积步骤以用第二电介质材料填充所述开口的剩余部分。第一沉积方法可以是高密度等离子体化学气相沉积。第二沉积方法可以是高纵横比法。

8. 发明申请

US20080194452A1 Wet cleaning solution 有权
标题翻译：湿清洗液
公开(公告)号：US20080194452A1
公开(公告)日：2008-08-14
申请号：US11703752
申请日：2007-02-08
申请人： Cheng-Yuan Tsai , Chih-Lung Lin , Cheng-Chen Hsueh
发明人： Cheng-Yuan Tsai , Chih-Lung Lin , Cheng-Chen Hsueh
IPC分类号： C11D17/08
CPC分类号： C11D11/0047 , C11D1/88
摘要： A wet cleaning solution, comprising 0.01-3 wt % of an amphoteric imidazolium surfactant capable of forming a complex with metal ions, a pH adjuster, and balanced deionized water. The wet cleaning solution is substantially free of corrosion inhibitor other than the imidazolium amphoteric surfactant.
摘要翻译：一种湿清洗溶液，其包含0.01-3重量％能与金属离子形成络合物的两性咪唑表面活性剂，pH调节剂和平衡的去离子水。除了咪唑鎓两性表面活性剂之外，湿清洗溶液基本上不含腐蚀抑制剂。

9. 发明申请

US20080032482A1 ISOLATION STRUCTURES AND METHODS OF FABRICATING ISOLATION STRUCTURES 有权
标题翻译：隔离结构和制作隔离结构的方法
公开(公告)号：US20080032482A1
公开(公告)日：2008-02-07
申请号：US11462571
申请日：2006-08-04
申请人： Cheng-Yuan Tsai , Chih-Lung Lin , Cheng-Chen Calvin Hsueh
发明人： Cheng-Yuan Tsai , Chih-Lung Lin , Cheng-Chen Calvin Hsueh
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method of forming an isolation structure includes the steps of: (a) forming an opening within a substrate; (b) forming a substantially conformal layer comprising tetraethoxysilane (TEOS) layer along the opening; and (c) forming a dielectric layer over the TEOS layer, the dielectric layer substantially filling the opening.
摘要翻译：形成隔离结构的方法包括以下步骤：（a）在衬底内形成开口; （b）沿开口形成包含四乙氧基硅烷（TEOS）层的基本上共形的层; 和（c）在TEOS层上形成介电层，介电层基本上填充开口。

10. 发明授权

US07226875B2 Method for enhancing FSG film stability 有权
标题翻译：提高FSG膜稳定性的方法
公开(公告)号：US07226875B2
公开(公告)日：2007-06-05
申请号：US10999547
申请日：2004-11-30
申请人： Cheng-Yuan Tsai , You-Hua Chou , Chih-Lung Lin
发明人： Cheng-Yuan Tsai , You-Hua Chou , Chih-Lung Lin
IPC分类号： H01L21/316 , H01L21/473
CPC分类号： H01L21/76801 , H01L21/02129 , H01L21/02131 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3105 , H01L21/31629 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76834
摘要： A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The gas forms reactive hydrogen species which removes fluorine radicals and reactive phosphorous species which forms a moisture-gettering and ion-gettering phosphorious oxide film the layer.
摘要翻译：公开了一种提高氟化硅玻璃层的稳定性的方法。将设置在基板上的氟化硅玻璃层例如经受含磷和含氢气体如磷化氢（PH 3 N 3）。气体形成反应性氢物质，其去除氟自由基和反应性磷物质，其形成吸湿和吸除离子的氧化磷膜。

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