专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08664720B2 High voltage semiconductor devices 有权
标题翻译：高压半导体器件
公开(公告)号：US08664720B2
公开(公告)日：2014-03-04
申请号：US12868434
申请日：2010-08-25
申请人： Mayank Shrivastava , Maryam Shojaei Baghini , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
发明人： Mayank Shrivastava , Maryam Shojaei Baghini , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
IPC分类号： H01L29/76 , H01L29/94 , H01L27/01 , H01L27/12 , H01L31/062
CPC分类号： H01L27/1211 , H01L27/0727 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/0847 , H01L29/1033 , H01L29/7831 , H01L29/7835 , H01L29/7836 , H01L29/78624
摘要： In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.
摘要翻译：在一个实施例中，半导体器件包括设置在衬底中的第一掺杂类型的第一源。第一掺杂型的第一漏极设置在衬底中。第一栅极区域设置在第一源极和第一漏极之间。第一掺杂类型的第一沟道区域设置在第一栅极区域的下方。第二掺杂类型与第一掺杂类型相反。第一掺杂类型的第一延伸区域设置在第一栅极和第一漏极之间。第一延伸区域是设置在基板中或上方的第一鳍片的一部分。第一隔离区域设置在第一延伸区域和第一漏极之间。第一掺杂类型的第一阱区设置在第一隔离区下。第一阱区域将第一延伸区域与第一漏极电耦合。

2. 发明申请

US20130258534A1 LOW VOLTAGE ESD CLAMPING USING HIGH VOLTAGE DEVICES 有权
标题翻译：使用高压器件的低电压ESD钳位
公开(公告)号：US20130258534A1
公开(公告)日：2013-10-03
申请号：US13437475
申请日：2012-04-02
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H02H9/04
CPC分类号： H02H9/046
摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device. The ESD protection device includes a first electrical path extending between the first and second circuit nodes and including a trigger element. A second electrical path extends between the first and second circuit nodes. The second electrical path includes a shunt element. A switching element is configured to trigger current flow through the shunt element based on both a state of the trigger element and a state of the switching element.
摘要翻译：一些实施例涉及静电放电（ESD）保护装置。 ESD保护装置包括在第一和第二电路节点之间延伸并且包括触发元件的第一电路径。第二电路在第一和第二电路节点之间延伸。第二电路包括分路元件。开关元件被配置为基于触发元件的状态和开关元件的状态触发通过分流元件的电流。

3. 发明申请

US20130229223A1 Tunable Fin-SCR for Robust ESD Protection 有权
标题翻译：可调谐Fin-SCR，用于强大的ESD保护
公开(公告)号：US20130229223A1
公开(公告)日：2013-09-05
申请号：US13411667
申请日：2012-03-05
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H03K17/72 , H01L29/74
CPC分类号： H01L29/7436 , H01L27/0262 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0692 , H01L29/1016 , H01L29/102 , H01L29/744
摘要： One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed.
摘要翻译：本发明的一个实施例涉及一种硅控整流器（SCR）。 SCR包括在阳极和阴极之间延伸并且包括其间的结区域的纵向硅翅片。一个或多个第一横向翼片在位于阳极和接合区域之间的一个或多个相应的攻丝点处横穿纵向翅片。还公开了其它装置和方法。

4. 发明授权

US08476711B2 System for protection against electrostatic discharges in an electrical circuit 有权
标题翻译：用于防止电路中的静电放电的系统
公开(公告)号：US08476711B2
公开(公告)日：2013-07-02
申请号：US12176659
申请日：2008-07-21
申请人： Harald Gossner , Christian Russ
发明人： Harald Gossner , Christian Russ
IPC分类号： H01L27/06
CPC分类号： H01L27/1211 , H01L27/0288 , H01L29/42392 , H01L29/66795 , H01L29/785 , H01L29/8086 , H01L2029/7857
摘要： A gate controlled fin resistance element for use as an electrostatic discharge (ESD) protection element in an electrical circuit has a fin structure having a first connection region, a second connection region and a channel region formed between the first and second connection regions. Furthermore, the fin resistance element has a gate region formed at least over a part of the surface of the channel region. The gate region is electrically coupled to a gate control device, which gate control device controls an electrical potential applied to the gate region in such a way that the gate controlled fin resistance element has a high electrical resistance during a first operating state of the electrical circuit and a lower electrical resistance during a second operating state, which is characterized by the occurrence of an ESD event.
摘要翻译：在电路中用作静电放电（ESD）保护元件的栅极控制鳍电阻元件具有鳍状结构，其具有形成在第一和第二连接区域之间的第一连接区域，第二连接区域和沟道区域。此外，散热片电阻元件具有形成在通道区域的表面的至少一部分上的栅极区域。栅极区域电耦合到栅极控制装置，栅极控制装置控制施加到栅极区域的电位，使得栅极控制的鳍状电阻元件在电路的第一操作状态期间具有高电阻并且在第二操作状态期间具有较低的电阻，其特征在于发生ESD事件。

5. 发明授权

US08456785B2 Semiconductor ESD device and method 有权
标题翻译：半导体ESD器件及方法
公开(公告)号：US08456785B2
公开(公告)日：2013-06-04
申请号：US12911582
申请日：2010-10-25
申请人： Krzysztof Domanski , Cornelius Christian Russ , David Alvarez , Wolfgang Soldner
发明人： Krzysztof Domanski , Cornelius Christian Russ , David Alvarez , Wolfgang Soldner
IPC分类号： H02H9/00 , H02H1/00 , H02H1/04 , H02H3/22 , H02H9/06
CPC分类号： H01L27/0262 , H01L2924/0002 , H01L2924/00
摘要： An embodiment semiconductor device has a first device region disposed on a second device region within an ESD device region disposed within a semiconductor body. Also included is a third device region disposed on the second device region, a fourth device region adjacent to the second device region, a fifth device region disposed within the fourth device region, and a sixth device region adjacent to the fourth device region. The first and fourth regions have a first semiconductor type, and the second, third, fifth and sixth regions have a second conductivity type opposite the first conductivity type. An interface between the fourth device region and the sixth device region forms a diode junction. The first, second, fourth and fifth device regions form a silicon controlled rectifier.
摘要翻译：实施例半导体器件具有设置在设置在半导体本体内的ESD器件区域内的第二器件区域上的第一器件区域。还包括设置在第二器件区域上的第三器件区域，与第二器件区域相邻的第四器件区域，设置在第四器件区域内的第五器件区域以及与第四器件区域相邻的第六器件区域。第一和第四区域具有第一半导体类型，并且第二，第三，第五和第六区域具有与第一导电类型相反的第二导电类型。第四器件区域和第六器件区域之间的界面形成二极管结。第一，第二，第四和第五器件区域形成可控硅整流器。

6. 发明申请

US20130009254A1 Electrical Device and Fabrication Method 审中-公开
公开(公告)号：US20130009254A1
公开(公告)日：2013-01-10
申请号：US13620955
申请日：2012-09-15
申请人： Christian Russ , Gunther Lehmann , Franz Ungar
发明人： Christian Russ , Gunther Lehmann , Franz Ungar
IPC分类号： H01L27/06 , H01L21/8232
CPC分类号： H01L23/5256 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.

7. 发明申请

US20120218671A1 Semiconductor ESD Device and Method of Making Same 有权
标题翻译：半导体ESD器件及其制造方法
公开(公告)号：US20120218671A1
公开(公告)日：2012-08-30
申请号：US13464464
申请日：2012-05-04
申请人： Krzysztof Domanski , Cornelius Christian Russ , Kai Esmark
发明人： Krzysztof Domanski , Cornelius Christian Russ , Kai Esmark
IPC分类号： H02H9/04 , H01L21/331
CPC分类号： H01L27/0262 , H01L21/82 , H01L27/0248 , H01L27/0255 , H01L27/0259 , H01L29/74 , H01L29/7436 , H01L2924/13034
摘要： A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
摘要翻译：半导体器件包括设置在半导体本体内的SCR ESD器件区域，以及设置在第二导电类型的第二器件区域上的第一导电类型的多个第一器件区域，其中第二导电类型与第一导电类型相反。还包括具有第一导电类型的子区域和设置在第二器件区域上的第二导电类型的子区域的多个第三器件区域。第一区域和第二区域分布成使得第三区域不直接相邻。还包括与第二器件区域相邻的第一导电类型的第四器件区域和布置在第四器件区域内的第二导电类型的第五器件区域。

8. 发明申请

US20120154962A1 ELECTROSTATIC DISCHARGE CLAMPING DEVICES WITH TRACING CIRCUITRY 有权
标题翻译：具有跟踪电路的静电放电钳位装置
公开(公告)号：US20120154962A1
公开(公告)日：2012-06-21
申请号：US12975210
申请日：2010-12-21
申请人： Christian Russ , Wolfgang Soldner , Klaus von Arnim , David Alvarez , Krzysztof Domanski , Gernot Langguth
发明人： Christian Russ , Wolfgang Soldner , Klaus von Arnim , David Alvarez , Krzysztof Domanski , Gernot Langguth
IPC分类号： H02H9/00
CPC分类号： H02H9/046 , H01L27/0285
摘要： Techniques and architectures corresponding to electrostatic discharge clamping circuits with tracing circuitry are described.
摘要翻译：描述对应于具有跟踪电路的静电放电钳位电路的技术和架构。

9. 发明授权

US08198651B2 Electro static discharge protection device 有权
标题翻译：静电放电保护装置
公开(公告)号：US08198651B2
公开(公告)日：2012-06-12
申请号：US12250436
申请日：2008-10-13
申请人： Gernot Langguth , Wolfgang Soldner , Cornelius Christian Russ
发明人： Gernot Langguth , Wolfgang Soldner , Cornelius Christian Russ
IPC分类号： H01L29/02
CPC分类号： H01L29/7436 , H01L27/0262 , H01L27/092 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device for protecting against an electro static discharge is disclosed. In one embodiment, the semiconductor device includes a first low doped region disposed in a substrate, a first heavily doped region disposed within the first low doped region, the first heavily doped region comprising a first conductivity type, and the first low doped region comprising a second conductivity type, the first and the second conductivity types being opposite, the first heavily doped region being coupled to a node to be protected. The semiconductor device further includes a second heavily doped region coupled to a first power supply potential node, the second heavily doped region being separated from the first heavily doped region by a portion of the first low doped region, and a second low doped region disposed adjacent the first low doped region, the second low doped region comprising the first conductivity type. A third heavily doped region is disposed in the second low doped region, the third heavily doped region comprising the second conductivity type and being coupled to a second power supply potential node.
摘要翻译：公开了一种用于防止静电放电的半导体器件。在一个实施例中，半导体器件包括设置在衬底中的第一低掺杂区域，设置在第一低掺杂区域内的第一重掺杂区域，第一重掺杂区域包括第一导电类型，第一低掺杂区域包括第二导电类型，第一和第二导电类型是相反的，第一重掺杂区域耦合到待保护的节点。所述半导体器件还包括耦合到第一电源电势节点的第二重掺杂区域，所述第二重掺杂区域由所述第一低掺杂区域的一部分与所述第一重掺杂区域分离，以及邻近设置的第二低掺杂区域第一低掺杂区域，第二低掺杂区域包括第一导电类型。第三重掺杂区域设置在第二低掺杂区域中，第三重掺杂区域包括第二导电类型并耦合到第二电源电位节点。

10. 发明申请

US20120002333A1 ESD Clamp Adjustment 有权
标题翻译： ESD钳位调整
公开(公告)号：US20120002333A1
公开(公告)日：2012-01-05
申请号：US12826983
申请日：2010-06-30
申请人： Wolfgang Soldner , Gernot Langguth , Christian Russ , Harald Gossner
发明人： Wolfgang Soldner , Gernot Langguth , Christian Russ , Harald Gossner
IPC分类号： H02H9/04
CPC分类号： H02H9/046 , H01L23/60 , H01L2924/0002 , H03K17/08122 , H01L2924/00
摘要： Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses.
摘要翻译：本公开的实施例涉及静电放电（ESD）保护技术。例如，一些实施例包括可变电阻器，其选择性地将来自第一电路节点的输入ESD脉冲的功率分流到第二电路节点并远离半导体器件。提供给可变电阻器的控制电压使得晶体管在只有亚阈值电流（如果有的话）流动的完全关闭模式之间改变; 其中最大量的电流流动的完全启动模式; 以及其中中间和时变量的电流流动的模拟模式。特别地，模拟模式允许ESD保护装置比先前可实现的更精确地分流功率，使得ESD保护装置可以保护半导体器件免受ESD脉冲。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式