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1. 发明授权

US11699745B2 Thyristor 有权
公开(公告)号：US11699745B2
公开(公告)日：2023-07-11
申请号：US17513535
申请日：2021-10-28
申请人： MACRONIX International Co., Ltd.
发明人： Shih-Yu Wang , Wen-Tsung Huang , Chih-Wei Hsu
IPC分类号： H01L29/74 , H01L29/10
CPC分类号： H01L29/7408 , H01L29/102 , H01L29/1016
摘要： A thyristor includes a first transistor and a second transistor. The first transistor has a first end serving as an anode end. The second transistor has a control end coupled to a second end of the first transistor, a first end coupled to a control end of the first transistor, and a second end coupled to the first end of the second transistor and serving as a cathode end.

2. 发明授权

US09876004B2 Semiconductor component including a short-circuit structure 有权
公开(公告)号：US09876004B2
公开(公告)日：2018-01-23
申请号：US15016992
申请日：2016-02-05
申请人： Infineon Technologies AG
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L27/02 , H01L29/36 , H01L29/167 , H01L21/324 , H01L29/861 , H01L29/66 , H01L29/74 , H01L29/06 , H01L29/739 , H01L29/165 , H01L29/08 , H01L27/102 , H01L29/10
CPC分类号： H01L27/0255 , H01L21/324 , H01L27/1027 , H01L29/0692 , H01L29/083 , H01L29/0834 , H01L29/0839 , H01L29/1012 , H01L29/1016 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66136 , H01L29/66363 , H01L29/7395 , H01L29/7428 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.

3. 发明授权

US09608098B2 Tunable FIN-SCR for robust ESD protection 有权
公开(公告)号：US09608098B2
公开(公告)日：2017-03-28
申请号：US14614622
申请日：2015-02-05
申请人： Intel Deutschland GmbH
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H01L29/74 , H01L29/06 , H01L29/10 , H01L27/02 , H01L29/744
CPC分类号： H01L29/7436 , H01L27/0262 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0692 , H01L29/1016 , H01L29/102 , H01L29/744
摘要： One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed.

4. 发明申请

US20170025414A1 Thyristor Volatile Random Access Memory and Methods of Manufacture 有权
标题翻译：晶闸管易失性随机存取存储器及其制造方法
公开(公告)号：US20170025414A1
公开(公告)日：2017-01-26
申请号：US15283085
申请日：2016-09-30
申请人： Kilopass Technology, Inc.
发明人： Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng
IPC分类号： H01L27/102 , H01L21/762 , H01L29/45 , G11C11/39 , H01L21/321 , H01L29/06 , H01L29/10 , H01L29/749 , H01L29/66 , H01L21/28
CPC分类号： H01L27/1027 , G11C11/39 , H01L21/28035 , H01L21/321 , H01L21/324 , H01L21/76224 , H01L28/00 , H01L29/0649 , H01L29/0834 , H01L29/1016 , H01L29/102 , H01L29/16 , H01L29/4236 , H01L29/45 , H01L29/456 , H01L29/66356 , H01L29/66363 , H01L29/749
摘要： A volatile memory array using vertical thyristors is disclosed together with methods of fabricating the array.
摘要翻译：公开了使用垂直晶闸管的易失性存储器阵列以及制造阵列的方法。

5. 发明申请

US20150144997A1 Tunable FIN-SCR for Robust ESD Protection 有权
标题翻译：可调谐的FIN-SCR，用于强大的ESD保护
公开(公告)号：US20150144997A1
公开(公告)日：2015-05-28
申请号：US14614622
申请日：2015-02-05
申请人： Intel Mobile Communications GmbH
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H01L29/74 , H01L29/744 , H01L27/02
CPC分类号： H01L29/7436 , H01L27/0262 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0692 , H01L29/1016 , H01L29/102 , H01L29/744
摘要： One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed.
摘要翻译：本发明的一个实施例涉及一种硅控整流器（SCR）。 SCR包括在阳极和阴极之间延伸并且包括其间的结区域的纵向硅翅片。一个或多个第一横向翼片在位于阳极和接合区域之间的一个或多个相应的攻丝点处横穿纵向翅片。还公开了其它装置和方法。

6. 发明申请

US20070120145A1 Gate turn-off thyristor 审中-公开
标题翻译：门极关断晶闸管
公开(公告)号：US20070120145A1
公开(公告)日：2007-05-31
申请号：US10552268
申请日：2004-04-07
申请人： Katsunori Asano , Yoshitaka Sugawara
发明人： Katsunori Asano , Yoshitaka Sugawara
IPC分类号： H01L31/111
CPC分类号： H01L29/1016 , H01L29/0615 , H01L29/0834 , H01L29/744
摘要： A mesa-type wide-gap semiconductor gate turn-off thyristor has a low gate withstand voltage and a large leakage current. Since the ionization rate of P-type impurities greatly increases at high temperatures when compared with that at room temperature, the hole implantation amount increases and the minority carrier lifetime becomes longer. Consequently, the maximum controllable current is significantly lowered when compared with that at room temperature. To solve these problems, a p-type base layer is formed on an n-type SiC cathode emitter layer which has a cathode electrode on one surface, and a thin n-type base layer is formed on the p-type base layer. A mesa-shaped p-type anode emitter layer is formed in the central region of the n-type base layer. An n-type gate contact region is formed sufficiently apart from the junction between the p-type anode emitter layer and the n-type base layer, and an n-type low-resistance gate region is so formed in the n-type base layer that it surrounds the anode emitter layer.
摘要翻译：台式宽间隙半导体栅极截止晶闸管具有低栅极耐受电压和较大的漏电流。由于与高温下相比，P型杂质的电离率大大增加，所以空穴注入量增加，少数载流子寿命变长。因此，与室温相比，最大可控电流显着降低。为了解决这些问题，在单面表面具有阴极的n型SiC阴极发射极层上形成p型基极层，在p型基极层上形成薄的n型基极层。在n型基极层的中心区域形成台状p型阳极发射极层。与p型阳极发射极层和n型基极层之间的接合部充分地形成n型栅极接触区域，在n型基极层上形成n型低电阻栅极区域它围绕阳极发射极层。

7. 发明申请

US20010011717A1 Vertical power component manufacturing method 有权
标题翻译：垂直功率元件制造方法
公开(公告)号：US20010011717A1
公开(公告)日：2001-08-09
申请号：US09747757
申请日：2000-12-22
发明人： Roy Mathieu
IPC分类号： H01B001/00
CPC分类号： H01L29/66295 , H01L21/2257 , H01L21/761 , H01L29/0619 , H01L29/0634 , H01L29/0834 , H01L29/1016 , H01L29/1095 , H01L29/66333 , H01L29/66393
摘要： A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.
摘要翻译：一种在由轻掺杂硅晶片形成的基板上制造垂直功率分量的方法，包括以下步骤：在所述基板的下表面侧镗孔垂直于该表面的一连串孔; 扩散与孔相反的第二导电类型的掺杂剂; 并且在衬底的上表面侧上钻出类似的孔，以限定隔离壁并且从这些孔扩散具有高掺杂水平的第二导电类型的掺杂剂，对应于隔离壁的孔对于扩散区域是足够接近的横向和垂直连接。

8. 发明授权

US4982258A Metal oxide semiconductor gated turn-off thyristor including a low lifetime region 失效
标题翻译：金属氧化物半导体门控截止晶闸管，包括低寿命区域
公开(公告)号：US4982258A
公开(公告)日：1991-01-01
申请号：US188888
申请日：1988-05-02
申请人： Bantval J. Baliga
发明人： Bantval J. Baliga
IPC分类号： H01L29/744 , H01L21/265 , H01L21/322 , H01L29/10 , H01L29/74 , H01L29/745 , H01L29/749
CPC分类号： H01L29/102 , H01L21/26506 , H01L29/1016 , H01L29/7455
摘要： In a depletion mode thyristor of the type including a regenerative portion and a non-regenerative portion, the turn-off time for the thyristor is substantially reduced without producing a corresponding increase in the on-resistance of the device by providing a region of relatively low carrier lifetime in the non-regenerative portion of the device in the layer or layers in which charge storage limits the turn-off time for the device. Turn-off of the thyristor is accomplished by pinching off the regenerative portion, thereby diverting current into the low carrier lifetime non-regenerative portion.

9. 发明授权

US3914781A Gate controlled rectifier 失效
标题翻译：门控整流器
公开(公告)号：US3914781A
公开(公告)日：1975-10-21
申请号：US48431174
申请日：1974-06-28
申请人： SONY CORP
发明人： MATSUSHITA TAKESHI , HORINAGA HIROSHI , OHTSU TAKAJI , HAYASHI HISAO
IPC分类号： H01L29/10 , H01L29/744 , H01L29/74 , H01L29/06 , H01L29/90
CPC分类号： H01L29/1016 , H01L29/744
摘要： A semiconductor PNPN large current switching device constructed such that the PN junction of the cathode N type region and a select portion of the P gating element located directly beneath the cathode contact lead is substantially nonconductive. In a preferred embodiment this is accomplished by highly doping the select portion of the P type gating region with an impurity to lower the electron injection efficiency of the adjacent portion of the cathode N type region. In another embodiment it is accomplished by constructing the select P type portion to have a greater thickness than the remaining portion of the gating P region, and in still another embodiment both of these features are employed.
摘要翻译：半导体PNPN大电流开关器件被构造成使得阴极N型区域的PN结和位于阴极接触引线正下方的P选通元件的选择部分基本上不导电。在优选实施例中，这是通过用杂质高度掺杂P型选通区域的选择部分来实现的，以降低阴极N型区域的相邻部分的电子注入效率。在另一个实施例中，通过将选择P型部分构造成具有比选通P区域的剩余部分更大的厚度来实现，并且在又一实施例中，采用了这两个特征。

10. 发明授权

US3855611A Thyristor devices 失效
标题翻译： THYRISTOR设备
公开(公告)号：US3855611A
公开(公告)日：1974-12-17
申请号：US35010973
申请日：1973-04-11
申请人： RCA CORP
发明人： NEILSON J , WEISBERG H
IPC分类号： H01L29/00 , H01L29/10 , H01L11/10
CPC分类号： H01L29/1016 , H01L29/00
摘要： A thyristor has at least four semiconducting regions, adjacent regions being of opposite type conductivity, one of the regions comprising a base region of the device bounded by blocking PN junctions, the base region including a portion of relatively high conductivity, and the PN junctions bordering regions of semiconductor material of relatively low conductivity.
摘要翻译：晶闸管具有至少四个半导体区域，相邻区域具有相反类型的导电性，其中一个区域包括由阻挡PN结限定的器件的基极区域，该基极区域包括相对较高导电率的一部分，以及PN接合点导电性较低的半导体材料区域。

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