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1. 发明授权

US08139387B2 Method of erasing a memory device including complementary nonvolatile memory devices 有权
标题翻译：擦除包括互补非易失性存储器件的存储器件的方法
公开(公告)号：US08139387B2
公开(公告)日：2012-03-20
申请号：US12662989
申请日：2010-05-14
申请人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
发明人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
IPC分类号： G11C5/06
CPC分类号： G11C11/5621 , H01L27/0688 , H01L27/11521 , H01L27/11551
摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
摘要翻译：提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。第一和第二非易失性存储器被布置成使得其上表面相邻。

2. 发明申请

US20090181531A1 METHODS OF MANUFACTURING NON-VOLATILE MEMORY DEVICES HAVING INSULATING LAYERS TREATED USING NEUTRAL BEAM IRRADIATION 失效
标题翻译：使用中性光束辐射处理绝缘层的非易失性存储器件的制造方法
公开(公告)号：US20090181531A1
公开(公告)日：2009-07-16
申请号：US12346934
申请日：2008-12-31
申请人： Soo-doo Chae , Chung-woo Kim , Choong-man Lee , Yung-hee Lee , Chan-jin Park , Sung-wook Hwang , Jeong-hee Han , Do-haing Lee , Jin-seok Lee
发明人： Soo-doo Chae , Chung-woo Kim , Choong-man Lee , Yung-hee Lee , Chan-jin Park , Sung-wook Hwang , Jeong-hee Han , Do-haing Lee , Jin-seok Lee
IPC分类号： H01L21/28
CPC分类号： H01L21/31155 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.
摘要翻译：公开了制造可以减少或防止存储在电荷存储层中的电荷损失和/或可通过绝缘层的中性束照射改善电荷存储容量的非易失性存储器件的制造方法。所述方法包括在衬底上形成隧道绝缘层，在隧道绝缘层上形成电荷存储层，在电荷存储层上形成阻挡绝缘层，用中性光束照射阻挡绝缘层和/或隧道绝缘层并且在所述阻挡绝缘层上形成栅极导电层。

3. 发明授权

US07439574B2 Silicon/oxide/nitride/silicon nonvolatile memory with vertical channels 有权
标题翻译：具有垂直通道的硅/氧化物/氮化物/硅非易失性存储器
公开(公告)号：US07439574B2
公开(公告)日：2008-10-21
申请号：US10460673
申请日：2003-06-13
申请人： Chung-woo Kim , Byung-gook Park , Jong-duk Lee , Yong-kyu Lee
发明人： Chung-woo Kim , Byung-gook Park , Jong-duk Lee , Yong-kyu Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/7926 , G11C11/5628 , H01L21/28282 , H01L29/66833 , H01L29/785 , H01L29/7923
摘要： Provided are a silicon/oxide/nitride/oxide/silicon (SONOS) memory, a fabricating method thereof, and a memory programming method. The SONOS memory includes a substrate; a first insulating layer stacked on the substrate; a semiconductor layer, which is patterned on the first insulating layer in a predetermined shape, including source and drain electrodes separated by a predetermined interval; a second insulating layer located on the semiconductor layer between the source and drain electrodes; a memory layer, which is deposited on sides of a portion of the semiconductor layer between the source and drain electrodes and on sides and an upper surface of the second insulating layer, including electron transferring channels and an electron storing layer; and a gate electrode, which is deposited on a surface of the memory layer, for controlling transfer of electrons in the memory layer. The programming method may provide a large capacity, stable, multi-level memory.
摘要翻译：提供了硅/氧化物/氮化物/氧化物/硅（SONOS）存储器，其制造方法和存储器编程方法。 SONOS存储器包括基板; 堆叠在所述基板上的第一绝缘层; 半导体层，其在预定形状的第一绝缘层上图案化，包括以预定间隔隔开的源极和漏极; 位于源极和漏极之间的半导体层上的第二绝缘层; 存储层，其沉积在源极和漏极之间的半导体层的一部分的侧面上，并且沉积在包括电子传输沟道和电子存储层的第二绝缘层的侧面和上表面上; 以及沉积在存储层的表面上用于控制存储层中电子转移的栅电极。编程方法可以提供大容量，稳定的多级存储器。

4. 发明申请

US20080217677A1 Non-volatile semiconductor memory device with alternative metal gate material 审中-公开
公开(公告)号：US20080217677A1
公开(公告)日：2008-09-11
申请号：US12153148
申请日：2008-05-14
申请人： Sang-hun JEON , Jeong-hee HAN , Chung-woo KIM
发明人： Sang-hun JEON , Jeong-hee HAN , Chung-woo KIM
IPC分类号： H01L29/788
CPC分类号： H01L29/513 , G11C16/0416 , G11C16/0466 , H01L29/40114 , H01L29/40117 , H01L29/7881 , H01L29/792
摘要： A non-volatile semiconductor memory device comprises a substrate including a source region, a drain region and a channel region provided between the source region and the drain region with a gate stack located above the channel region with a metal gate located above the gate stack. The metal gate is comprised of a metal having a specific metal work function relative to a composition of a layer of the gate stack that causes electrons to travel through the entire thickness of the blocking layer via direct tunneling. The gate stack preferably comprises a multiple layer stack selected from a group of multiple layer stacks consisting of: ONO, ONH, OHH, OHO, HHH, or HNH, where O is an oxide material, N is SiN, and H is a high κ material.

5. 发明申请

US20080087940A1 Nonvolatile memory device and method of fabricating the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080087940A1
公开(公告)日：2008-04-17
申请号：US11589994
申请日：2006-10-31
申请人： Soo-doo Chae , Chung-woo Kim , Chan-jin Park , Jeong-hee Han , Byung-gook Park , Il-han Park
发明人： Soo-doo Chae , Chung-woo Kim , Chan-jin Park , Jeong-hee Han , Byung-gook Park , Il-han Park
IPC分类号： H01L29/792 , H01L21/8238
CPC分类号： H01L29/792 , H01L29/66833 , H01L29/7926
摘要： A nonvolatile memory device, includes a semiconductor substrate having a bottom part, a second vertical part positioned vertically on the bottom part, and a first vertical part having a width smaller than a width of the second vertical part and positioned on the second vertical part to have a boundary step therebetween; a charge trap layer disposed on a lateral surface of the first vertical part and on an upper surface of the boundary step; and a control gate electrode disposed on an upper surface of the bottom part and on lateral surfaces of the second vertical part and the charge trap layer.
摘要翻译：一种非易失性存储器件，包括：半导体衬底，具有底部;垂直于第二垂直方向的底部;以及第一垂直部分，其宽度小于第二垂直部分的宽度，并且位于第二垂直部分上，在其间具有边界步骤; 电荷陷阱层，设置在所述第一垂直部分的侧表面和所述边界台阶的上表面上; 以及设置在所述底部的上表面和所述第二垂直部分和所述电荷陷阱层的侧表面上的控制栅电极。

6. 发明授权

US07358137B2 Memory devices including barrier layers and methods of manufacturing the same 有权
标题翻译：存储器件包括阻挡层及其制造方法
公开(公告)号：US07358137B2
公开(公告)日：2008-04-15
申请号：US11245426
申请日：2005-10-07
申请人： Sang-hun Jeon , Chung-woo Kim , Hyun-sang Hwang
发明人： Sang-hun Jeon , Chung-woo Kim , Hyun-sang Hwang
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L21/28273 , H01L29/513 , H01L29/7881
摘要： Memory devices and methods of manufacturing the same are provided. Memory devices may include a substrate, a source region and a drain region and a gate structure. The gate structure may be in contact with the source and drain regions, and may include a barrier layer. The barrier layer may be formed of at least two layers. The at least two layers may have different bandgap energies.
摘要翻译：提供了存储器件及其制造方法。存储器件可以包括衬底，源极区域和漏极区域以及栅极结构。栅极结构可以与源极和漏极区域接触，并且可以包括阻挡层。阻挡层可以由至少两层形成。至少两层可能具有不同的带隙能量。

7. 发明申请

US20070138541A1 Method of erasing data from SONOS memory device 审中-公开
标题翻译：从SONOS存储器件擦除数据的方法
公开(公告)号：US20070138541A1
公开(公告)日：2007-06-21
申请号：US11702064
申请日：2007-02-05
申请人： Soo-doo Chae , Chung-woo Kim , Jo-won Lee , Moon-kyung Kim
发明人： Soo-doo Chae , Chung-woo Kim , Jo-won Lee , Moon-kyung Kim
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , G11C16/0466
摘要： A SONOS memory device, and a method of erasing data from the same, includes injecting charge carriers of a second sign into a trapping film, which traps charge carriers of a first sign to store data therein. The charge carriers of the second sign are generated by an electric field formed between one of a first and second electrodes contacting at least one bit line and a gate electrode contacting a word line. A blocking film may be provided between the gate electrode and the trapping film. The charge carriers of the second sign may be hot holes. This erasing improves erasing speed, thereby improving performance of the SONOS memory device.
摘要翻译： SONOS存储器件和从其中擦除数据的方法包括将第二符号的电荷载体注入陷阱膜，捕获膜俘获第一符号的电荷载体以在其中存储数据。第二符号的电荷载体由形成在与至少一个位线接触的第一和第二电极中的一个与接触字线的栅电极之间的电场产生。可以在栅电极和捕获膜之间设置阻挡膜。第二标志的电荷载体可能是热孔。这种擦除提高了擦除速度，从而提高了SONOS存储器件的性能。

8. 发明申请

US20060273377A1 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20060273377A1
公开(公告)日：2006-12-07
申请号：US11504702
申请日：2006-08-16
申请人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
发明人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
IPC分类号： H01L29/788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/7887
摘要： Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
摘要翻译：提供一种非易失性存储器件及其制造方法。该器件包括半导体衬底; 设置在所述半导体衬底中的源区和漏区以及置于所述源极和漏极区之间的沟道区; 设置在所述源极区附近的所述沟道区上的第一隧道氧化物层; 设置在漏区附近的沟道区上的第二隧道氧化层; 设置在第一隧道氧化物层上的第一电荷俘获层; 设置在所述第二隧道氧化物层上的第二电荷俘获层; 覆盖第一和第二电荷俘获层的阻挡氧化物层; 介于所述第一和第二电荷俘获层之间的电荷隔离层; 以及设置在阻挡氧化物层上的栅电极。

9. 发明申请

US20060118858A1 Non-volatile semiconductor memory device with alternative metal gate material 有权
标题翻译：具有替代金属栅极材料的非易失性半导体存储器件
公开(公告)号：US20060118858A1
公开(公告)日：2006-06-08
申请号：US11246114
申请日：2005-10-11
申请人： Sang-hun Jeon , Jeong-hee Han , Chung-woo Kim
发明人： Sang-hun Jeon , Jeong-hee Han , Chung-woo Kim
IPC分类号： H01L29/788
CPC分类号： H01L29/513 , G11C16/0416 , G11C16/0466 , H01L21/28273 , H01L21/28282 , H01L29/7881 , H01L29/792
摘要： A non-volatile semiconductor memory device comprises a substrate including a source region, a drain region and a channel region provided between the source region and the drain region with a gate stack located above the channel region with a metal gate located above the gate stack. The metal gate is comprised of a metal having a specific metal work function relative to a composition of a layer of the gate stack that causes electrons to travel through the entire thickness of the blocking layer via direct tunneling. The gate stack preferably comprises a multiple layer stack selected from a group of multiple layer stacks consisting of: ONO, ONH, OHH, OHO, HHH, or HNH, where O is an oxide material, N is SiN, and H is a high κ material.
摘要翻译：非易失性半导体存储器件包括：衬底，其包括源区域，漏极区域和设置在源极区域和漏极区域之间的沟道区域，栅极堆叠位于沟道区域上方，金属栅极位于栅极叠层之上。金属栅极由具有特定的金属功函数的金属组成，相对于栅堆叠层的组成，其使电子通过直接隧道穿过阻挡层的整个厚度。栅极堆叠优选地包括选自由以下组成的多层堆叠的多层堆叠：ONO，ONH，OHH，OHO，HHH或HNH，其中O是氧化物材料，N是SiN，H是高kappa 材料。

10. 发明授权

US08237214B2 Non-volatile memory device including metal-insulator transition material 失效
标题翻译：包括金属 - 绝缘体过渡材料的非易失性存储器件
公开(公告)号：US08237214B2
公开(公告)日：2012-08-07
申请号：US11980352
申请日：2007-10-31
申请人： Wan-jun Park , Jo-won Lee , Sang-hun Jeon , Chung-woo Kim
发明人： Wan-jun Park , Jo-won Lee , Sang-hun Jeon , Chung-woo Kim
IPC分类号： H01L29/792
CPC分类号： H01L21/28273 , H01L21/28282
摘要： A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.
摘要翻译：提供了包括金属 - 绝缘体转变（MIT）材料的非易失性存储器件。非易失性存储器件包括具有隧道层，电荷陷阱层，形成在衬底上的阻挡层和栅电极的栅极堆叠，其中隧道层和阻挡层中的至少一个由MIT形成金属 - 绝缘体转变）材料。

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