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1. 发明授权

US07112842B2 Nonvolatile memory device and method of manufacturing the same 有权
公开(公告)号：US07112842B2
公开(公告)日：2006-09-26
申请号：US10975996
申请日：2004-10-29
申请人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
发明人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
IPC分类号： H01L29/788 , H01L21/338
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/7887
摘要： Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

2. 发明申请

US20050162958A1 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20050162958A1
公开(公告)日：2005-07-28
申请号：US10975996
申请日：2004-10-29
申请人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
发明人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
IPC分类号： H01L21/8247 , G11C7/00 , H01L21/28 , H01L29/423 , H01L29/788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/7887
摘要： Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
摘要翻译：提供一种非易失性存储器件及其制造方法。该器件包括半导体衬底; 设置在所述半导体衬底中的源区和漏区以及置于所述源极和漏极区之间的沟道区; 设置在所述源极区附近的所述沟道区上的第一隧道氧化物层; 设置在漏区附近的沟道区上的第二隧道氧化层; 设置在第一隧道氧化物层上的第一电荷俘获层; 设置在所述第二隧道氧化物层上的第二电荷俘获层; 覆盖第一和第二电荷俘获层的阻挡氧化物层; 介于所述第一和第二电荷俘获层之间的电荷隔离层; 以及设置在阻挡氧化物层上的栅电极。

3. 发明申请

US20060273377A1 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20060273377A1
公开(公告)日：2006-12-07
申请号：US11504702
申请日：2006-08-16
申请人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
发明人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
IPC分类号： H01L29/788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/7887
摘要： Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
摘要翻译：提供一种非易失性存储器件及其制造方法。该器件包括半导体衬底; 设置在所述半导体衬底中的源区和漏区以及置于所述源极和漏极区之间的沟道区; 设置在所述源极区附近的所述沟道区上的第一隧道氧化物层; 设置在漏区附近的沟道区上的第二隧道氧化层; 设置在第一隧道氧化物层上的第一电荷俘获层; 设置在所述第二隧道氧化物层上的第二电荷俘获层; 覆盖第一和第二电荷俘获层的阻挡氧化物层; 介于所述第一和第二电荷俘获层之间的电荷隔离层; 以及设置在阻挡氧化物层上的栅电极。

4. 发明授权

US07208365B2 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07208365B2
公开(公告)日：2007-04-24
申请号：US11504702
申请日：2006-08-16
申请人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
发明人： Hee-soon Chae , Chung-woo Kim , Kwang-youl Seo , Tae-hyun Han , Byung-chul Kim , Joo-yeon Kim
IPC分类号： H01L21/8238
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/7887
摘要： Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
摘要翻译：提供一种非易失性存储器件及其制造方法。该器件包括半导体衬底; 设置在所述半导体衬底中的源区和漏区以及置于所述源极和漏极区之间的沟道区; 设置在所述源极区附近的所述沟道区上的第一隧道氧化物层; 设置在漏区附近的沟道区上的第二隧道氧化层; 设置在第一隧道氧化物层上的第一电荷俘获层; 设置在所述第二隧道氧化物层上的第二电荷俘获层; 覆盖第一和第二电荷俘获层的阻挡氧化物层; 介于所述第一和第二电荷俘获层之间的电荷隔离层; 以及设置在阻挡氧化物层上的栅电极。

5. 发明申请

US20110116334A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20110116334A1
公开(公告)日：2011-05-19
申请号：US12948302
申请日：2010-11-17
申请人： Je-min YU , Byung-chul Kim , Jun-hyung Kim , Sang-joon Hwang
发明人： Je-min YU , Byung-chul Kim , Jun-hyung Kim , Sang-joon Hwang
IPC分类号： G11C7/12 , G11C7/08
CPC分类号： G11C7/18 , G11C7/12 , G11C11/4094 , G11C11/4097 , G11C2207/002
摘要： A semiconductor memory device includes a bitline sensing amp detecting and amplifying data of a pair of bitlines from a memory cell, a column selecting unit transmitting the data of the pair of bitlines to a pair of local datalines in response to a column selecting signal, a dataline precharging unit precharging the pair of local datalines to a precharging voltage level in response to a precharging signal, and a dataline sensing amp detecting and amplifying data transmitted to the pair of local datalines. The dataline sensing amp includes a charge sync unit discharging the pair of local datalines at the precharging voltage level in response to a first dataline sensing enabling signal and data of the pair of local datalines, and a data sensing unit transmitting data of the pair of local datalines to a pair of global datalines in response to a second dataline sensing enabling signal.
摘要翻译：半导体存储器件包括：位线检测放大器，用于检测和放大来自存储器单元的一对位线的数据;列选择单元，响应于列选择信号，将一对位线的数据传输到一对本地数据; 数据预充电单元响应于预充电信号将一对本地数据线预充电到预充电电压电平，以及数据感测放大器检测和放大传输到该对本地数据线的数据。数据传感放大器包括电荷同步单元，响应于第一数据感测使能信号和一对本地数据的数据，以预充电电压电平放电该对本地数据线;以及数据感测单元，传输该对本地数据响应于第二数据感测使能信号将数据传送到一对全局数据。

6. 发明授权

US07646226B2 Adaptive bandwidth phase locked loops with current boosting circuits 失效
标题翻译：带电流升压电路的自适应带宽锁相环
公开(公告)号：US07646226B2
公开(公告)日：2010-01-12
申请号：US11826901
申请日：2007-07-19
申请人： Byung-chul Kim
发明人： Byung-chul Kim
IPC分类号： H03L7/06
CPC分类号： H03L7/0895
摘要： An adaptive bandwidth phase locked loop (PLL) includes a phase frequency detector configured to generate a comparison pulse having a pulse-width and sign corresponding to a difference between a reference frequency and a first frequency. A pulse-voltage converter is configured to generate a control voltage corresponding to the comparison pulse. An oscillator is configured to generate the output frequency corresponding to the control voltage.
摘要翻译：自适应带宽锁相环（PLL）包括相位频率检测器，被配置为产生具有对应于参考频率和第一频率之间的差的脉冲宽度和符号的比较脉冲。脉冲电压转换器被配置为产生对应于比较脉冲的控制电压。振荡器被配置为产生对应于控制电压的输出频率。

7. 发明授权

US08307988B2 Apparatus and method for separating components 失效
标题翻译：用于分离组件的装置和方法
公开(公告)号：US08307988B2
公开(公告)日：2012-11-13
申请号：US12952208
申请日：2010-11-23
申请人： Jong-myeon Park , Byung-chul Kim
发明人： Jong-myeon Park , Byung-chul Kim
IPC分类号： B03B5/60
CPC分类号： G01N21/07 , B01L3/50273 , B01L3/502738 , B01L3/502753 , B01L2300/0806 , B01L2300/0864 , B01L2300/1861 , B01L2400/0409 , B01L2400/0677 , F16K99/0001 , F16K99/0021 , F16K99/0063 , F16K2099/0074 , F16K2099/0076 , F16K2099/0084 , Y10T436/111666 , Y10T436/25375
摘要： An apparatus for separating components and a method of separating components using the apparatus are provided. The apparatus includes: a main chamber which contains a sample that is separated into a plurality of layers by a centrifugal force; a component separating chamber which is connected to the main chamber, and receives a specific layer including specific components among the plurality of layers; a first channel which connects the component separating chamber to the main chamber; and a first channel valve which is disposed in the first channel to control a liquid flowing through the first channel.
摘要翻译：提供了一种用于分离组件的装置和使用该装置分离组件的方法。该装置包括：主室，其包含通过离心力分离成多个层的样品; 分离室，其连接到所述主室，并且在所述多个层中接收包括特定成分的特定层; 将部件分离室连接到主室的第一通道; 以及第一通道阀，其设置在第一通道中以控制流过第一通道的液体。

8. 发明授权

US08263333B2 Method of analyzing a target nucleic acid sequence 有权
标题翻译：分析靶核酸序列的方法
公开(公告)号：US08263333B2
公开(公告)日：2012-09-11
申请号：US12644295
申请日：2009-12-22
申请人： Byung-chul Kim
发明人： Byung-chul Kim
IPC分类号： C12Q1/68 , C12P19/34 , C07H21/02 , C07H21/04
CPC分类号： C12Q1/6869 , C12Q2525/301 , C12Q2565/501
摘要： Provided is a method of analyzing a target nucleic acid sequence by using an elongation reaction and a ligation reaction.
摘要翻译：提供了通过使用延伸反应和连接反应来分析靶核酸序列的方法。

9. 发明授权

US07784911B2 Apparatus and method for printing biomolecular droplet on substrate 有权
标题翻译：在基板上印刷生物分子液滴的装置和方法
公开(公告)号：US07784911B2
公开(公告)日：2010-08-31
申请号：US11747043
申请日：2007-05-10
申请人： Kui-hyun Kim , Byung-chul Kim , Kwang-ho Cheong , Su-hyeon Kim
发明人： Kui-hyun Kim , Byung-chul Kim , Kwang-ho Cheong , Su-hyeon Kim
IPC分类号： B41J2/06
CPC分类号： B01J19/0046 , B01J2219/00371 , B01J2219/00378 , B01J2219/00497 , B01J2219/00527 , B01J2219/00585 , B01J2219/00596 , B01J2219/00641 , B01J2219/00659 , B01J2219/00677 , B01J2219/00722 , B01J2219/00725 , B01J2219/00743 , B01L3/0262 , B01L2300/0819 , B01L2400/027 , C40B60/14
摘要： An apparatus and method which print a biomolecular droplet onto a solid substrate using an electric charge concentration effect comprises: a needle shaped electric field forming electrode which is made of a conductive material, is disposed vertically, and comprises an accommodating area and a nozzle formed on a bottom end of the accommodating area; a solid substrate which is electrically grounded, is disposed below the electric field forming electrode, and comprises a moisture thin film and a target surface onto which the biomolecular droplet is discharged from the nozzle of the electric field forming electrode; and an open circuit type voltage applying unit which is electrically connected to the electric field forming electrode, applies a charge to the electric field forming electrode, and causes the biomolecular droplet to be ejected onto the target surface.
摘要翻译：使用电荷浓度效应将生物分子液滴印刷到固体基质上的装置和方法包括：由导电材料制成的针形电场形成电极垂直设置，并且包括容纳区域和形成在容纳区域的底端; 电气接地的固体基板设置在电场形成电极的下方，并且包括湿气薄膜和生物分子液滴从电场形成电极的喷嘴排出的目标表面; 以及与电场形成电极电连接的开路型电压施加单元，向电场形成电极施加电荷，并使生物分子液滴喷射到目标表面上。

10. 发明授权

US07585634B2 Method of predicting risk of lung cancer recurrence, and a composition, kit and microarray for the same 有权
标题翻译：预测肺癌复发风险的方法，以及组合物，试剂盒和微阵列
公开(公告)号：US07585634B2
公开(公告)日：2009-09-08
申请号：US11971585
申请日：2008-01-09
申请人： Byung-chul Kim , Jhin-gook Kim , Nam Hur , Kyu-sang Lee , Dae-soon Son , Kyung-hee Park , Tae-jin Ahn
发明人： Byung-chul Kim , Jhin-gook Kim , Nam Hur , Kyu-sang Lee , Dae-soon Son , Kyung-hee Park , Tae-jin Ahn
IPC分类号： C12Q1/68 , G01N33/53 , C12N15/11 , C12N15/12
CPC分类号： C40B40/06 , C12Q1/6886 , C12Q2600/112 , C12Q2600/118 , C12Q2600/158 , C40B30/04 , Y10S977/792
摘要： Provided is a method of predicting risk of lung cancer recurrence in a lung cancer patient or after a patient has lung cancer treatment, the method including: obtaining a biological sample from a lung cancer patient; measuring an expression level of at least one marker gene from the biological sample, the marker gene being selected from the group consisting of marker genes of Table 1, 2 or 3, to obtain data for the expression level of the marker gene; and determining whether the expression level of the marker gene corresponds to an expression level of a recurrence group or an expression level of a non-recurrence group.
摘要翻译：本发明提供一种预测肺癌患者的肺癌复发风险或患者进行肺癌治疗后的方法，该方法包括从肺癌患者获得生物样品; 测定来自生物样品的至少一种标记基因的表达水平，所述标记基因选自表1,2或3的标记基因，以获得标记基因表达水平的数据; 确定标记基因的表达水平是否符合复发组的表达水平或非复发组的表达水平。

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