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1. 发明授权

US07599593B2 Ge-Si quantum well structures 有权
标题翻译： Ge-Si量子阱结构
公开(公告)号：US07599593B2
公开(公告)日：2009-10-06
申请号：US11230285
申请日：2005-09-19
申请人： James S. Harris, Jr. , David A. B. Miller , Yu-Hsuan Kuo
发明人： James S. Harris, Jr. , David A. B. Miller , Yu-Hsuan Kuo
IPC分类号： G02B6/10 , H01L31/00
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： Si—Ge quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1−xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. A preferred method of providing such quantum well structures on a substrate (e.g., a silicon substrate) is to grow a first Ge-rich Si—Ge buffer layer on the substrate, and then anneal the resulting layered structure. In many cases it is further preferred to grow a second Ge-rich Si—Ge buffer layer on top of the first buffer layer and anneal the resulting layered structure.
摘要翻译： Si-Ge量子阱，其中阱材料在k = 0（第一布里渊区域的伽马点）具有最低导带能量最小值。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用尤其是光学调制器有用的物理效应。在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。量子阱屏障组合物可以具有或不具有凯恩样条带。在衬底（例如，硅衬底）上提供这种量子阱结构的优选方法是在衬底上生长第一富锗的Si-Ge缓冲层，然后使所得的层状结构退火。在许多情况下，进一步优选的是在第一缓冲层的顶部生长第二富锗的Si-Ge缓冲层并退火所得到的层状结构。

2. 发明授权

US07457487B2 Surface parallel modulator 失效
标题翻译：表面并行调制器
公开(公告)号：US07457487B2
公开(公告)日：2008-11-25
申请号：US11524530
申请日：2006-09-19
申请人： David A. B. Miller , Yu-Hsuan Kuo , James S. Harris, Jr.
发明人： David A. B. Miller , Yu-Hsuan Kuo , James S. Harris, Jr.
IPC分类号： G02F1/035 , G02B6/26
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用尤其是光学调制器有用的物理效应。在Si 1-x N Ge x S x材料体系中，对于大于约0.7的x，满足条带结构的这个条件。量子阱屏障组合物可以具有或不具有凯恩样条带。具有表面平行配置的本发明的实施例特别适用于光纤耦合器件。这种表面平行装置在优选不是单模波导的装置几何形状中具有在量子阱的平面中传播的光。

3. 发明授权

US06680791B2 Semiconductor device for rapid optical switch by modulated absorption 失效
标题翻译：半导体器件通过调制吸收快速光开关
公开(公告)号：US06680791B2
公开(公告)日：2004-01-20
申请号：US10075921
申请日：2002-02-13
申请人： Hilmi Volkan Demir , David A. B. Miller , Vijit Sabnis
发明人： Hilmi Volkan Demir , David A. B. Miller , Vijit Sabnis
IPC分类号： G02F103
CPC分类号： B82Y20/00 , G02B6/12004 , G02B2006/12123 , G02B2006/12142 , G02B2006/12145 , G02F1/0126 , G02F1/01708 , G02F1/035 , G02F2001/0153 , G02F2002/008 , G02F2201/58
摘要： This invention relates to a semiconductor device and method for switching or modulating optical signals. The semiconductor device has a photodetector having a low electrical capacitance Cd, a detector absorbing layer for absorbing an optical signal beam, a modulator having a low capacitance Cm and a modulator absorbing layer exhibiting an electric field-dependent absorption coefficient. The modulator absorbing layer is used for absorbing an optical power beam, which is to be modulated or switched. The device has a low resistivity region between the photodetector and the modulator such that the electric field-dependent absorption coefficient is altered uniformly and rapidly throughout the modulator absorbing layer during absorption of the optical signal beam in the detector absorbing layer. The device is equipped with a high resistivity element in series with the low resistivity region for minimizing a net charge flow to and from the device.
摘要翻译：本发明涉及一种用于切换或调制光信号的半导体器件和方法。半导体器件具有低电容Cd的光检测器，用于吸收光信号光束的检测器吸收层，具有低电容Cm的调制器和显示电场依赖吸收系数的调制器吸收层。调制器吸收层用于吸收被调制或切换的光功率光束。器件在光电检测器和调制器之间具有低电阻率区域，使得在吸收检测器吸收层中的光信号光束时，电场依赖吸收系数在整个调制器吸收层中均匀且快速地改变。该装置配备有与低电阻率区域串联的高电阻率元件，用于最小化去往和来自该装置的净电荷流。

4. 发明授权

US06618150B2 Compact transform spectrometer based on sampling a standing wave 失效
公开(公告)号：US06618150B2
公开(公告)日：2003-09-09
申请号：US09932457
申请日：2001-08-16
申请人： James S. Harris, Jr. , Helen L. Kung , David A. B. Miller
发明人： James S. Harris, Jr. , Helen L. Kung , David A. B. Miller
IPC分类号： G01B902
CPC分类号： G01J3/4532 , G01J3/45
摘要： A spectrometer for determining a spectrum of a light by using a mirror to reflect the light so that the light forms an intensity standing wave pattern through superposition of an incident portion of the light and a reflected portion of the light. The spectrometer is equipped with an intensity detector whose thickness is less than a shortest wavelength of the light being examined and which is semitransparent over the spectrum. The spectrometer has a mechanism to provide relative movement between the mirror and the intensity detector such that the intensity detector registers a variation of the intensity standing wave pattern. An analyzer, such as a Fourier transform analyzer, is employed to determine the spectrum of the light from that variation of the intensity standing wave pattern.

5. 发明授权

US06445839B1 Optical wavelength-division-multiplexed cross-connect incorporating optically controlled optical switch 失效
标题翻译：光学波分复用交叉连接并入光控光开关
公开(公告)号：US06445839B1
公开(公告)日：2002-09-03
申请号：US09435325
申请日：1999-11-05
申请人： David A. B. Miller
发明人： David A. B. Miller
IPC分类号： G02B6835
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/01716 , G02F2/004 , H04Q11/0005 , H04Q2011/0041
摘要： A semiconductor device for modulating an optical power light beam with an optical signal light beam contains a detector diode for absorbing the signal beam and a quantum well modulator diode for absorbing the power beam. Both diodes are reverse biased, allowing for absorption of the power beam at photon energies below the band gap energy of the quantum well layer. Absorption of the signal beam creates carriers that screen the field in the detector diode, lowering the bias voltage. Because top and bottom layers of the entire structure are made to be highly conductive, overall voltage is fixed, leading to a simultaneous change of voltage in the modulator diode, altering absorption by electroabsorption mechanisms. In a first embodiment, the diodes are oriented such that decreased voltage in the detector diode leads to decreased voltage in the modulator diode; the device is used as an optically controlled optical switch. Alternately, the voltage in the modulator diode increases, and the device is used as a gated photodetector. The optically controlled optical switch may be incorporated into an optical cross-connect for use in wavelength-division-multiplexed systems. The cross-connect contains an array of switches, and can transfer signal information between beams of different wavelength. A given set of input signals can be selectively switched to a given set of output signals of different wavelength.
摘要翻译：用于利用光信号光束调制光功率光束的半导体器件包含用于吸收信号光束的检测器二极管和用于吸收功率光束的量子阱调制器二极管。两个二极管都是反向偏置的，允许在光子能量下吸收低于量子阱层的带隙能量的功率束。信号光束的吸收产生屏蔽检测器二极管中的场的载波，降低偏置电压。由于整个结构的顶层和底层被制成高导电性，整个电压是固定的，导致调制二极管中的电压同时变化，从而改变电吸收机制的吸收。在第一实施例中，二极管被定向成使得检测器二极管中的电压降低导致调制器二极管中的电压降低; 该器件用作光控光开关。或者，调制器二极管中的电压增加，并且该器件用作门控光电检测器。光学控制的光开关可以并入用于波分复用系统的光交叉连接。交叉连接包含一组开关，可以在不同波长的波束之间传输信号信息。一组给定的输入信号可以选择性地切换到不同波长的一组给定的输出信号。

6. 发明授权

US5777318A Smart pixel array using single diode for detection and modulation 失效
标题翻译：智能像素阵列使用单个二极管进行检测和调制
公开(公告)号：US5777318A
公开(公告)日：1998-07-07
申请号：US588155
申请日：1996-01-17
申请人： Ashok V. Krishnamoorthy , David A. B. Miller
发明人： Ashok V. Krishnamoorthy , David A. B. Miller
IPC分类号： H01L27/144 , H01L31/0352 , H01L31/105 , H01J40/14
CPC分类号： B82Y20/00 , H01L27/1443 , H01L31/035236 , H01L31/105
摘要： A smart pixel array is disclosed wherein a single optical beam can be used to transmit information to and from each subarea or cell of the pixel array. An optical P-I-N diode with an intrinsic MQW region is present in each subarea, and the optical beam is oriented to impinge on the diode. A first transmission gate couples information to be transmitted to the diode during a transmit interval, and information received by the diode is coupled through a second transmission gate to a receiver circuit during a receive interval. A third transmission gate couples a reset potential to the diode during spacing intervals between the transmit and receive intervals.
摘要翻译：公开了一种智能像素阵列，其中可以使用单个光束将信息发送到像素阵列的每个子区域或单元。具有固有MQW区域的光学P-I-N二极管存在于每个子区域中，并且光束被定向成撞击二极管。在发送间隔期间，第一传输门将要发送到二极管的信息耦合，并且由二极管接收的信息在接收间隔期间通过第二传输门耦合到接收器电路。在发送和接收间隔之间的间隔间隔期间，第三传输门将复位电位耦合到二极管。

7. 发明授权

US5508508A Apparatus for converting optical bipolar signals to optical unipolar signals 失效
标题翻译：用于将光学双极性信号转换为光学单极信号的装置
公开(公告)号：US5508508A
公开(公告)日：1996-04-16
申请号：US273083
申请日：1994-07-08
申请人： David A. B. Miller
发明人： David A. B. Miller
IPC分类号： H01L31/10 , H01L31/12 , H03K5/01 , H03K19/0175 , H04B10/02 , H04B10/28 , H04B10/06
CPC分类号： H03K19/017536 , H03K5/01
摘要： An apparatus for converting a bipolar optical signal to a unipolar optical signal includes first and second photodetectors electrically coupled in series for receiving the bipolar optical signal. An electro-absorption modulator such as a self-linearized modulator, for example, is electrically coupled to the photodetectors. The modulator serves to transmit therethrough a portion of the power of an optical beam in an amount proportional to the power of the bipolar optical signal to form a transmitted beam. A constant current source is provided for supplying a current that shifts the power of the optical beam transmitted through the modulator by a predetermined amount, thus forming the desired unipolar optical signal.
摘要翻译：用于将双极性光信号转换为单极光信号的装置包括串联电耦合以接收双极光信号的第一和第二光电检测器。诸如自线性调制器之类的电吸收调制器电耦合到光电检测器。调制器用于通过与双极光信号的功率成比例的量的光束的功率的一部分传输以形成透射光束。提供恒流源以提供将通过调制器传输的光束的功率偏移预定量的电流，从而形成期望的单极光信号。

8. 发明授权

US5483375A Optical ratio amplifier 失效
标题翻译：光比放大器
公开(公告)号：US5483375A
公开(公告)日：1996-01-09
申请号：US355753
申请日：1994-12-14
申请人： David A. B. Miller
发明人： David A. B. Miller
IPC分类号： G02F1/015 , G02F1/35 , G02F3/00 , G06E3/00 , H01J40/14
CPC分类号： G02F3/00 , G06E3/005
摘要： An apparatus for amplifying the optical power ratio includes first and second input electro-absorption modulators coupled together in series that each receive an optical input beam. First and second output electro-absorption modulators are coupled together in series and each generate an optical output beam. A voltage amplifier electrically couples a first node located between the first and second input modulators to a second node located between the first and second output modulators. In operation, the power ratio of the output beams is a function of the power ratio of the input beams.
摘要翻译：用于放大光功率比的装置包括串联耦合在一起的每个接收光输入光束的第一和第二输入电吸收调制器。第一和第二输出电吸收调制器串联耦合在一起，并且每个产生光输出光束。电压放大器将位于第一和第二输入调制器之间的第一节点电耦合到位于第一和第二输出调制器之间的第二节点。在操作中，输出光束的功率比是输入光束的功率比的函数。

9. 发明授权

US4978842A Programmable optical logic device with complementary inputs 失效
标题翻译：具有互补输入的可编程光逻辑器件
公开(公告)号：US4978842A
公开(公告)日：1990-12-18
申请号：US341524
申请日：1989-04-21
申请人： Harvard S. Hinton , Anthony L. Lentine , David A. B. Miller
发明人： Harvard S. Hinton , Anthony L. Lentine , David A. B. Miller
IPC分类号： G02F3/02
CPC分类号： G02F3/028
摘要： Boolean logic functions are provided in a programmable optical logic device by combining a symmetric self-electrooptic effect device (S-SEED) with a logic control element for optically programming the S-SEED to initiate logic operations from a predetermined state. The predetermined preset state together with subsequent application of optical data signals to the S-SEED permit the desired logic operation to be performed on the optical data signal by the optical logic device. Logic operations which may be programmed into the optical logic device include AND, NAND, OR and NOR functions. A complementary pair (Q and Q) of optical signals is provided as output from each optical logic device.
摘要翻译：通过将对称自电光效应器件（S-SEED）与用于光学地编程S-SEED的逻辑控制元件组合起来以在预定状态下启动逻辑运算，在可编程光逻辑器件中提供了布尔逻辑功能。预定的预置状态以及随后向S-SEED施加光学数据信号允许由光学逻辑器件对光学数据信号执行期望的逻辑操作。可以被编程到光学逻辑器件中的逻辑运算包括AND，NAND，OR和NOR功能。提供光信号的互补对（Q和＆amp; upbar＆Q）作为每个光逻辑器件的输出。

10. 发明授权

US4822992A Wavelength conversion using self electrooptic effect devices 失效
标题翻译：使用自电光效应器件进行波长转换
公开(公告)号：US4822992A
公开(公告)日：1989-04-18
申请号：US140079
申请日：1987-12-31
申请人： Israel Bar-Joseph , Daniel S. Chemla , David A. B. Miller
发明人： Israel Bar-Joseph , Daniel S. Chemla , David A. B. Miller
IPC分类号： G02F1/015 , G02F1/017 , G02F2/00 , G02F3/02 , H01L27/15 , H01L31/14 , H01J40/14
CPC分类号： B82Y20/00 , G02F1/01716 , G02F2/004 , G02F3/028
摘要： Information borne by an optical signal at a first wavelength is transferred intact to another optical signal at a second wavelength and vice versa via an optoelectronic circuit employing quantum well devices connected serially to facilitate self electrooptic effects therein. The optoelectronic circuit accepts two input signals and provides two output signals wherein an input signal and its corresponding output signal are at the same wavelength. Bidirectional information transfer with bidirectional wavelength conversion is permitted by the optoelectronic circuit.

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