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    • 1. 发明授权
    • Multiple winding transformer coupled amplifier
    • 多绕组变压器耦合放大器
    • US08912845B2
    • 2014-12-16
    • US13736028
    • 2013-01-07
    • Edward Perry Jordan
    • Edward Perry Jordan
    • H03F1/34H03F1/00
    • H03F1/00H03F1/347H03F3/195H03F3/211H03F2200/411H03F2200/489H03F2200/537
    • An integrated circuit includes a radio frequency (RF) amplifier having a trifilar transformer coupled to a gain device in two negative feedback paths. The trifilar transformer includes a first winding, a second winding and a third winding, a first dielectric core is disposed between the first winding and the second winding, and a second dielectric core is disposed between the second winding and the third winding. A first winding ratio between the first winding and the second winding combined with a second winding ratio between the second winding and the third winding affects a total gain of the RF amplifier. In a specific embodiment, the gain device is a transistor, the first winding is coupled to a base of the transistor, the second winding is coupled to a collector of the transistor, and the third winding is coupled to an emitter of the transistor.
    • 集成电路包括具有耦合到两个负反馈路径中的增益器件的三相变压器的射频(RF)放大器。 三相变压器包括第一绕组,第二绕组和第三绕组,第一介质芯设置在第一绕组和第二绕组之间,第二介质芯设置在第二绕组和第三绕组之间。 第一绕组和第二绕组之间的第一绕组比与第二绕组和第三绕组之间的第二绕组比组合影响RF放大器的总增益。 在具体实施例中,增益器件是晶体管,第一绕组耦合到晶体管的基极,第二绕组耦合到晶体管的集电极,第三绕组耦合到晶体管的发射极。
    • 2. 发明申请
    • MULTIPLE RAMP VARIABLE ATTENUATOR
    • 多变量变化衰减器
    • US20140210538A1
    • 2014-07-31
    • US13750729
    • 2013-01-25
    • Edward Perry Jordan
    • Edward Perry Jordan
    • H03L5/00
    • H03H7/25
    • The present disclosure provides an attenuator and associated methods of operations. An exemplary attenuator includes an input terminal, an output terminal, a voltage reference terminal, a first attenuation segment coupled with the input terminal and the output terminal, and a second attenuation segment coupled with the first attenuation segment and the voltage reference terminal. The attenuator further includes at least two switches coupled with the input terminal and the output terminal in parallel with the first attenuation segment, where at least some of the at least two switches have an associated voltage control terminal. For example, the attenuator includes a first switch and a second switch coupled with the input terminal and the output terminal in parallel with the first attenuation segment, wherein a first voltage control terminal is coupled with the first switch and a second voltage control terminal is coupled with the second switch.
    • 本公开提供了衰减器和相关联的操作方法。 示例性衰减器包括输入端子,输出端子,电压参考端子,与输入端子和输出端子耦合的第一衰减段,以及与第一衰减段和电压参考端子耦合的第二衰减段。 所述衰减器还包括与所述输入端子和所述输出端子并联的至少两个开关,所述至少两个开关与所述第一衰减段并联,其中所述至少两个开关中的至少一些具有相关联的电压控制端子。 例如,衰减器包括与第一衰减段并联的第一开关和与输入端和输出端耦合的第二开关,其中第一电压控制端与第一开关耦合,第二电压控制端耦合 与第二个开关。
    • 4. 发明申请
    • MULTIPLE WINDING TRANSFORMER COUPLED AMPLIFIER
    • 多功能变压器联轴器放大器
    • US20140191800A1
    • 2014-07-10
    • US13736028
    • 2013-01-07
    • Edward Perry Jordan
    • Edward Perry Jordan
    • H03F1/00
    • H03F1/00H03F1/347H03F3/195H03F3/211H03F2200/411H03F2200/489H03F2200/537
    • An integrated circuit includes a radio frequency (RF) amplifier having a trifilar transformer coupled to a gain device in two negative feedback paths. The trifilar transformer includes a first winding, a second winding and a third winding, a first dielectric core is disposed between the first winding and the second winding, and a second dielectric core is disposed between the second winding and the third winding. A first winding ratio between the first winding and the second winding combined with a second winding ratio between the second winding and the third winding affects a total gain of the RF amplifier. In a specific embodiment, the gain device is a transistor, the first winding is coupled to a base of the transistor, the second winding is coupled to a collector of the transistor, and the third winding is coupled to an emitter of the transistor.
    • 集成电路包括具有耦合到两个负反馈路径中的增益器件的三相变压器的射频(RF)放大器。 三相变压器包括第一绕组,第二绕组和第三绕组,第一介质芯设置在第一绕组和第二绕组之间,第二介质芯设置在第二绕组和第三绕组之间。 第一绕组和第二绕组之间的第一绕组比与第二绕组和第三绕组之间的第二绕组比组合影响RF放大器的总增益。 在具体实施例中,增益器件是晶体管,第一绕组耦合到晶体管的基极,第二绕组耦合到晶体管的集电极,第三绕组耦合到晶体管的发射极。