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1. 发明授权

US08922950B2 Multi-layer magnetoresistive shield with transition metal layer 有权
标题翻译：具有过渡金属层的多层磁阻屏蔽
公开(公告)号：US08922950B2
公开(公告)日：2014-12-30
申请号：US13102615
申请日：2011-05-06
申请人： Eric W. Singleton , Jae-Young Yi , Kaizhong Gao , Dimitar V. Dimitrov , Dian Song , Vladyslav A. Vas′ko
发明人： Eric W. Singleton , Jae-Young Yi , Kaizhong Gao , Dimitar V. Dimitrov , Dian Song , Vladyslav A. Vas′ko
IPC分类号： G11B5/39 , G11B5/11 , G01R33/09 , H01L43/02 , H01L43/08
CPC分类号： G11B5/3912 , G01R33/093 , G11B5/3932 , G11B5/398 , H01L43/02 , H01L43/08
摘要： A magnetic shield that is capable of enhancing magnetic reading. In accordance with various embodiments, a magnetic element has a magnetically responsive stack shielded from magnetic flux and biased to a predetermined default magnetization by at least one lateral side shield that has a transition metal layer disposed between first and second ferromagnetic layers.
摘要翻译：能够增强磁读数的磁屏蔽。根据各种实施例，磁性元件具有被磁通屏蔽的磁响应叠层，并且通过至少一个侧面屏蔽件被偏置到预定的预定磁化强度，该侧面屏蔽件具有设置在第一和第二铁磁层之间的过渡金属层。

2. 发明申请

US20090274931A1 HARD MAGNET WITH CAP AND SEED LAYERS AND DATA STORAGE DEVICE READ/WRITE HEAD INCORPORATING THE SAME 有权
标题翻译：具有盖和种子层的硬磁体和数据存储装置读/写头相同
公开(公告)号：US20090274931A1
公开(公告)日：2009-11-05
申请号：US12112671
申请日：2008-04-30
申请人： Jiaoming Qiu , Yonghua Chen , Xilin Peng , Shaun McKinlay , Eric W. Singleton , Brian W. Karr
发明人： Jiaoming Qiu , Yonghua Chen , Xilin Peng , Shaun McKinlay , Eric W. Singleton , Brian W. Karr
IPC分类号： G11B5/733 , B05D5/12
CPC分类号： H01F41/22 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B5/3932 , H01F10/123 , H01F10/14 , H01F10/16 , H01F10/265 , Y10T428/1164
摘要： A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer. The intermediate layer includes the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The first component is different than the second component. Additionally, a read/write head including the hard magnet.
摘要翻译：一种包括形成多层结构的方法。多层结构包括种子层，其包含选自由Pt族金属，Fe，Mn，Ir和Co组成的组的第一组分。多层结构还包括包含第一组分和第二组分的中间层，所述第二组分选自由Pt族金属，Fe，Mn，Ir，Co组成的第二成分与第一成分不同。多层结构还包括包含第一部件的盖层。该方法还包括将多层结构加热至退火温度以引起中间层的相变。还有一种包括种子层的硬磁体，其包含选自由Pt族金属，Fe，Mn，Ir和Co组成的组的第一组分。硬磁体还包括包含第一组分的盖层。硬磁体还包括种子层和盖层之间的中间层。中间层包括第一组分和选自Pt族金属，Fe，Mn，Ir和Co的第二组分。第一组分不同于第二组分。另外，包括硬磁体的读/写头。

3. 发明申请

US20090174968A1 MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING 有权
标题翻译：具有减小的屏蔽到屏蔽间隔的磁感测装置
公开(公告)号：US20090174968A1
公开(公告)日：2009-07-09
申请号：US11971664
申请日：2008-01-09
申请人： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
发明人： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
IPC分类号： G11B5/33
CPC分类号： G01R33/0052 , B82Y25/00 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398
摘要： A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.
摘要翻译：磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。第一和第二屏蔽层定义物理屏蔽间隔。传感器堆叠设置在第一和第二屏蔽之间，并且包括邻近第一屏蔽的晶种层，与第二屏蔽相邻的盖层，以及种子层和盖层之间的磁传感器。种子层和/或盖层的至少一部分包括磁性材料，以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。

4. 发明授权

US06954343B2 Magnetoresistive sensor having low resistivity dual path conductor and optimized magnetic 失效
标题翻译：具有低电阻率双路导体和优化磁性的磁阻传感器
公开(公告)号：US06954343B2
公开(公告)日：2005-10-11
申请号：US10142563
申请日：2002-05-08
申请人： David J. Larson , Eric W. Singleton , Mai A. Ghaly
发明人： David J. Larson , Eric W. Singleton , Mai A. Ghaly
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： G11B5/3903 , G11B5/313 , G11B5/3932
摘要： A transducing head has a magnetoresistive sensor and a first and a second dual path conductor/magnet structure for providing current to the magnetoresistive sensor and for stabilizing the magnetoresistive sensor. The first and the second dual path conductor/magnet structures are arranged in an abutted-junction configuration on opposite sides of the magnetoresistive sensor. Each of the first and the second dual path conductor/magnet structures has at least one bias layer and at least one conductor layer. Each bias layer is formed upon a bias seed layer positioned over one of the conductor layers. Each bias seed layer is selected to result in the bias layer formed upon it having a coercivity between about 1 kOe and about 5 kOe and an in-plane remnant squareness greater than about 0.8. Most preferably, each of the first and the second dual path conductor/magnet structures is formed of at least two conductor layers interspersed with at least one bias layer.
摘要翻译：换能头具有磁阻传感器和用于向磁阻传感器提供电流并稳定磁阻传感器的第一和第二双通道导体/磁体结构。第一和第二双路导体/磁体结构在磁阻传感器的相对侧上以邻接结构形式布置。第一和第二双路导体/磁体结构中的每一个具有至少一个偏置层和至少一个导体层。每个偏置层形成在位于一个导体层上的偏置种子层上。选择每个偏置种子层以产生在其上具有矫顽力在约1kOe和约5kOe之间的偏置层和大于约0.8的面内残余矩形度。最优选地，第一和第二双路径导体/磁体结构中的每一个由至少两个散布有至少一个偏置层的导体层形成。

5. 发明授权

US06818330B2 Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers 有权
标题翻译：垂直记录介质在软磁层中具有反铁磁交换耦合
公开(公告)号：US06818330B2
公开(公告)日：2004-11-16
申请号：US09939190
申请日：2001-08-24
申请人： Alexander M. Shukh , Eric W. Singleton , Sakhrat Khizroev , Dmitri Litvinov
发明人： Alexander M. Shukh , Eric W. Singleton , Sakhrat Khizroev , Dmitri Litvinov
IPC分类号： G11B566
CPC分类号： G11B5/667 , G11B5/012 , G11B5/03 , G11B5/66 , G11B5/74 , G11B2005/0029 , Y10S428/90 , Y10T428/24975 , Y10T428/265
摘要： A perpendicular magnetic recording medium with antiferromagnetic coupling in a soft magnetic underlayer. The soft magnetic underlayer includes a first magnetic soft layer, a first interface layer on the first magnetic soft layer, a second magnetic soft layer, a second interface layer on the second magnetic soft layer, and a non-magnetic coupling layer between the first interface layer and the second interface layer. The first and second magnetic soft layers are antiferromagnetically exchange coupled to one another through the non-magnetic coupling layer, wherein the first and second interface layers increase the exchange coupling between the first and second magnetic soft layers.
摘要翻译：在软磁性底层中具有反铁磁耦合的垂直磁记录介质。软磁性底层包括第一磁性软层，第一磁性软层上的第一界面层，第二磁性软层，第二磁性软层上的第二界面层，以及第一界面之间的非磁性耦合层层和第二界面层。第一和第二磁性软层通过非磁性耦合层彼此反铁磁交换耦合，其中第一和第二界面层增加第一和第二磁性软层之间的交换耦合。

6. 发明授权

US08659854B2 Magnetoresistive shield with stabilizing feature 有权
标题翻译：具有稳定功能的磁阻屏蔽
公开(公告)号：US08659854B2
公开(公告)日：2014-02-25
申请号：US13102663
申请日：2011-05-06
申请人： Eric W. Singleton , Junjie Quan , Jae-Young Yi , Shaun E. McKinlay
发明人： Eric W. Singleton , Junjie Quan , Jae-Young Yi , Shaun E. McKinlay
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3932 , G11B5/398 , H01F10/123 , H01F10/3272
摘要： A magnetoresistive (MR) reader is adjacent to at least one shield that extends from an air bearing surface (ABS) a first distance. The shield has a stabilizing feature that is contactingly adjacent the MR reader and extends from the ABS a second distance that is less than the first distance.
摘要翻译：磁阻（MR）读取器与至少一个从空气轴承表面（ABS）延伸第一距离的屏蔽体相邻。屏蔽件具有与MR读取器接触地相邻的稳定特征，并从ABS延伸小于第一距离的第二距离。

7. 发明申请

US20120280774A1 Magnetoresistive Shield with Lateral Sub-Magnets 有权
标题翻译：具有侧向磁铁的磁阻屏蔽
公开(公告)号：US20120280774A1
公开(公告)日：2012-11-08
申请号：US13102751
申请日：2011-05-06
申请人： Eric W. Singleton , Junjie Quan , Jae-Young Yi
发明人： Eric W. Singleton , Junjie Quan , Jae-Young Yi
IPC分类号： H01F7/02 , H01F1/00
CPC分类号： G11B5/3912 , G11B5/398 , H01F10/123 , H01F10/3254
摘要： A magnetic shield for a magnetoresistive (MR) reader has one or more lateral hard magnets and a ferromagnetic shielding layer with at least one hard sub-magnet in a lateral notch in the shielding layer. The notch allows the shielding layer to contact the sub-magnet on surfaces along multiple normal planes.
摘要翻译：用于磁阻（MR）读取器的磁屏蔽件具有一个或多个横向硬磁体和在屏蔽层中的横向凹口中具有至少一个硬副磁体的铁磁屏蔽层。凹口允许屏蔽层沿着多个正平面接触表面上的子磁体。

8. 发明授权

US07719802B2 Magnetic sensor with electrically defined active area dimensions 有权
标题翻译：具有电气限定有源面积尺寸的磁性传感器
公开(公告)号：US07719802B2
公开(公告)日：2010-05-18
申请号：US10668437
申请日：2003-09-23
申请人： Michael C. Kautzky , David J. Larson , Bradley H. Miller , Eric W. Singleton , Dimitar V. Dimitrov , Eric L. Granstrom , Song S. Xue
发明人： Michael C. Kautzky , David J. Larson , Bradley H. Miller , Eric W. Singleton , Dimitar V. Dimitrov , Eric L. Granstrom , Song S. Xue
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , G11B5/3909 , G11B2005/0018
摘要： A magnetic sensor having adjustable electrical dimensions, such as electrical read width and electrical stripe height, is disclosed. The magnetic sensor includes a sensor stack with one or more bias electrodes positioned with respect to the sensor stack. The electrical width or electrical stripe height of the sensor stack is a function of a voltage applied to the bias electrodes. The electric field produced by the bias electrodes alters the electrical profile of the magnetoresistive device.
摘要翻译：公开了一种具有可调整的电气尺寸的磁传感器，例如电读宽度和电条高度。磁传感器包括传感器堆叠，其具有相对于传感器堆叠定位的一个或多个偏置电极。传感器堆叠的电气宽度或电气条纹高度是施加到偏置电极的电压的函数。由偏置电极产生的电场改变磁阻器件的电气轮廓。

9. 发明授权

US06795279B2 Spin valve structures with specular reflection layers 有权
公开(公告)号：US06795279B2
公开(公告)日：2004-09-21
申请号：US10754317
申请日：2004-01-09
申请人： Eric W. Singleton , Kristin Joy Duxstad , Michael B. Hintz
发明人： Eric W. Singleton , Kristin Joy Duxstad , Michael B. Hintz
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3903 , H01F10/3268 , H01F10/3272
摘要： This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.

10. 发明授权

US06700753B2 Spin valve structures with specular reflection layers 有权
标题翻译：具有镜面反射层的旋转阀结构
公开(公告)号：US06700753B2
公开(公告)日：2004-03-02
申请号：US09835131
申请日：2001-04-12
申请人： Eric W. Singleton , Kristin Joy Duxstad , Michael B. Hintz
发明人： Eric W. Singleton , Kristin Joy Duxstad , Michael B. Hintz
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3903 , H01F10/3268 , H01F10/3272
摘要： This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.
摘要翻译：本发明提出了一种磁旋转阀的方法和结构。自旋阀结构包括通过非磁性层与第二铁磁层分离的第一铁磁层。自旋阀结构还包括通过第一铁磁层，非磁性层和第二铁磁层与第二镜面散射层分离的第一镜面散射层。第一铁磁层可以包括自由层，非磁性层可以包括间隔层。第二铁磁层可以包括钉扎层或参考层。镜面散射层可以包括诸如Y 2 O 3，HfO 2，MgO，Al 2 O 3，NiO，Fe 2 O 3和Fe 3 O 4的材料。镜面散射层也可以用于SAF结构。在SAF结构中，反铁磁耦合材料可以与第二镜面散射层共沉积。

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