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1. 发明授权

US08507929B2 Semiconductor light emitting device including graded region 有权
标题翻译：半导体发光器件包括分级区域
公开(公告)号：US08507929B2
公开(公告)日：2013-08-13
申请号：US12139999
申请日：2008-06-16
申请人： Patrick N. Grillot , Rafael I. Aldaz , Eugene I. Chen , Sateria Salim
发明人： Patrick N. Grillot , Rafael I. Aldaz , Eugene I. Chen , Sateria Salim
IPC分类号： H01L33/00 , H01L33/12 , H01L21/00
CPC分类号： H01L33/12 , H01L33/00 , H01L33/02 , H01L33/30
摘要： One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.
摘要翻译： III-P发光器件中包括一个或多个渐变成分区域，以减少与器件中的接口相关联的Vf。根据本发明的实施例，半导体结构包括设置在n型区域和p型区域之间的III-P发光层。在p型区域和GaP窗口层之间设置分级区域。铝组合物在分级区域分级。分级区域可以具有至少150nm的厚度。在一些实施例中，除了或代替p型区域和GaP窗口层之间的渐变区域之外，铝组合物在设置在蚀刻停止层和n型区域之间的渐变区域中分级。

2. 发明申请

US20130106874A1 ENABLING DISPLAY COMMANDS FROM AN ELECTRONIC DEVICE TO AN INTEGRATED DISPLAY ON A COMPUTER SYSTEM 有权
标题翻译：将电子设备的显示命令用于计算机系统上的集成显示
公开(公告)号：US20130106874A1
公开(公告)日：2013-05-02
申请号：US13286603
申请日：2011-11-01
申请人： Adrian E. Sun , Thomas A. LaPerre, JR. , Collin L. Pieper , Eugene I. Chen
发明人： Adrian E. Sun , Thomas A. LaPerre, JR. , Collin L. Pieper , Eugene I. Chen
IPC分类号： G06F13/14 , G06T1/00
CPC分类号： G06F13/14 , G06T1/00 , G09G5/003 , G09G2340/125 , G09G2370/042
摘要： The disclosed embodiments provide a system that drives an integrated display on a computer system from an electronic device. The system includes a circuit, a processor, and an application executing on the processor. The circuit may receive a display command sent from the electronic device to the computer system. The application may obtain the display command from a memory on the computer system and process the display command to control a capability of the integrated display.
摘要翻译：所公开的实施例提供一种从电子设备驱动计算机系统上的集成显示器的系统。该系统包括在处理器上执行的电路，处理器和应用程序。电路可以接收从电子设备发送到计算机系统的显示命令。应用程序可以从计算机系统上的存储器获得显示命令，并处理显示命令以控制集成显示器的能力。

3. 发明授权

US06504171B1 Chirped multi-well active region LED 失效
标题翻译：啁啾多功能区LED
公开(公告)号：US06504171B1
公开(公告)日：2003-01-07
申请号：US09490777
申请日：2000-01-24
申请人： Patrick N. Grillot , Christopher P. Kocot , Michael R. Krames , Eugene I. Chen , Stephen A. Stockman , Ying-Lan Chang , Robert C. Taber
发明人： Patrick N. Grillot , Christopher P. Kocot , Michael R. Krames , Eugene I. Chen , Stephen A. Stockman , Ying-Lan Chang , Robert C. Taber
IPC分类号： H01L2906
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region by altering the electron and hole distribution profiles within the light emitting active layers of the active region (i.e., across the active region). The chirped multi-well active region produces a higher and more uniform distribution of electrons and holes throughout the active region of the device by substantially offsetting carrier diffusion effects caused by differences in electron and hole mobility by using complementary differences in layer thickness and/or layer composition within the active region. Thus, the chirped design of the multi-well active region increases the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region, which results in an increased light output of the device. The multi-well active region of the device may be chirped with respect to light emitting active layers and/or barrier layers of the active region. The light emitting device may be a III-V material LED, a II-VI material LED, a polymer or organic LED, a laser diode or an optical amplifier.
摘要翻译：发光器件和增加器件的光输出的方法利用啁啾多阱有源区，通过改变电子和空穴来增加有源区的发光有源层内的电子和空穴的辐射复合的概率在有源区域的发光有源层（即，跨过有源区域）的分布曲线。啁啾多孔有源区通过使用层厚度和/或层中的互补差异基本抵消由电子和空穴迁移率的差异引起的载流子扩散效应，从而在器件的整个有源区域中产生更高且更均匀的电子和空穴分布活性区内的组成。因此，多孔有源区的啁啾设计增加了有源区的发光有源层内的电子和空穴的辐射复合的概率，这导致器件的光输出增加。器件的多阱有源区可以相对于有源区的发光有源层和/或势垒层被啁啾。发光器件可以是III-V材料LED，II-VI材料LED，聚合物或有机LED，激光二极管或光放大器。

4. 发明授权

US08866828B2 Enabling display commands from an electronic device to an integrated display on a computer system 有权
标题翻译：启用从电子设备到计算机系统上集成显示器的显示命令
公开(公告)号：US08866828B2
公开(公告)日：2014-10-21
申请号：US13286603
申请日：2011-11-01
申请人： Adrian E. Sun , Thomas A. LaPerre, Jr. , Collin L. Pieper , Eugene I. Chen
发明人： Adrian E. Sun , Thomas A. LaPerre, Jr. , Collin L. Pieper , Eugene I. Chen
IPC分类号： G06T1/00 , G06F13/14
CPC分类号： G06F13/14 , G06T1/00 , G09G5/003 , G09G2340/125 , G09G2370/042
摘要： The disclosed embodiments provide a system that drives an integrated display on a computer system from an electronic device. The system includes a circuit, a processor, and an application executing on the processor. The circuit may receive a display command sent from the electronic device to the computer system. The application may obtain the display command from a memory on the computer system and process the display command to control a capability of the integrated display.
摘要翻译：所公开的实施例提供一种从电子设备驱动计算机系统上的集成显示器的系统。该系统包括在处理器上执行的电路，处理器和应用程序。电路可以接收从电子设备发送到计算机系统的显示命令。应用程序可以从计算机系统上的存储器获得显示命令，并处理显示命令以控制集成显示器的能力。

5. 发明申请

US20090309111A1 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GRADED REGION 有权
标题翻译：半导体发光装置，包括分级区域
公开(公告)号：US20090309111A1
公开(公告)日：2009-12-17
申请号：US12139999
申请日：2008-06-16
申请人： PATRICK N. GRILLOT , RAFAEL I. ALDAZ , EUGENE I. CHEN , SATERIA SALIM
发明人： PATRICK N. GRILLOT , RAFAEL I. ALDAZ , EUGENE I. CHEN , SATERIA SALIM
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/00 , H01L33/02 , H01L33/30
摘要： One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.
摘要翻译： III-P发光器件中包括一个或多个渐变成分区域，以减少与器件中的接口相关联的Vf。根据本发明的实施例，半导体结构包括设置在n型区域和p型区域之间的III-P发光层。在p型区域和GaP窗口层之间设置分级区域。铝组合物在分级区域分级。分级区域可以具有至少150nm的厚度。在一些实施例中，除了或代替p型区域和GaP窗口层之间的渐变区域之外，铝组合物在设置在蚀刻停止层和n型区域之间的渐变区域中分级。

6. 发明授权

US06469314B1 Thin multi-well active layer LED with controlled oxygen doping 失效
标题翻译：薄多孔有源层LED，具有受控氧掺杂
公开(公告)号：US06469314B1
公开(公告)日：2002-10-22
申请号：US09467941
申请日：1999-12-21
申请人： Patrick N. Grillot , Eugene I. Chen , Jen-Wu Huang , Stephen A. Stockman
发明人： Patrick N. Grillot , Eugene I. Chen , Jen-Wu Huang , Stephen A. Stockman
IPC分类号： H01L3100
CPC分类号： H01L33/305 , B82Y20/00 , H01L33/025 , H01L33/06
摘要： An LED and a method of fabricating the LED which utilize controlled oxygen (O) doping to form at least one layer of the LED having an O dopant concentration which is correlated to the dominant emission wavelength of the LED. The O dopant concentration is regulated to be higher when the LED has been configured to have a longer dominant emission wavelength. Since the dominant emission wavelength is dependent on the composition of the active layer(s) of the LED, the O dopant concentration in the layer is related to the composition of the active layer(s). The controlled O doping improves the reliability while minimizing any light output penalty due to the introduction of O dopants. In an exemplary embodiment, the LED is an AlGaInP LED that includes a substrate, an optional distributed Bragg reflector layer, an n-type confining layer, an optional n-type set-back layer, an active region, an optional p-type set-back layer, a p-type confining layer and an optional window layer. In a preferred embodiment, the active region includes a multiplicity of active layers, where each active layer is 125 Angstroms thick or less and the active layers are separated from each other by barrier layers whose composition is Al0.5In0.5P and whose thickness is 100 Angstroms or less. In a preferred embodiment, both the p-type confining layer and the p-type set-back layer are doped with a controlled amount of O, depending on the dominant emission wavelength of the LED. In addition to the O doping, the p-type confining layer of the LED is preferably doped with a high amount of p-type dopants, such as Mg, Zn, C or Be. During high temperature thermal processing, this high concentration of p-type dopants then partially diffuses into the active region, resulting in a heavily p-type doped active region.
摘要翻译： LED和制造LED的方法，其利用受控氧（O）掺杂来形成具有与LED的主发射波长相关的O掺杂剂浓度的至少一层LED。当LED被配置为具有更长的主发射波长时，O掺杂剂浓度被调节为更高。由于主发射波长取决于LED的有源层的组成，所以该层中的O掺杂剂浓度与有源层的组成有关。受控O掺杂提高了可靠性，同时最小化由于引入O掺杂剂导致的任何光输出损失。在示例性实施例中，LED是AlGaInP LED，其包括衬底，可选的分布式布拉格反射器层，n型约束层，可选的n型反射层，有源区，可选的p型集合背面层，p型约束层和可选窗口层。在优选实施例中，有源区包括多个有源层，其中每个有源层的厚度为125埃或更小，并且有源层通过其组成为Al 0.5 In 0.5 P并且其厚度为100的势垒层彼此分离埃或以下。在优选实施例中，取决于LED的主要发射波长，p型限制层和p型封装层都掺杂有受控量的O。除了O掺杂之外，LED的p型限制层优选掺杂有大量的p型掺杂剂，例如Mg，Zn，C或Be。在高温热处理期间，这种高浓度的p型掺杂剂然后部分地扩散到有源区，导致大量p型掺杂的有源区。

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