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1. 发明申请

US20210005716A1 SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONS 有权
公开(公告)号：US20210005716A1
公开(公告)日：2021-01-07
申请号：US16947294
申请日：2020-07-27
申请人： GREENTHREAD, LLC
发明人： G.R. Mohan Rao
IPC分类号： H01L29/10 , H01L27/11524 , H01L27/146 , H01L27/11521 , H01L29/739 , H01L29/36
摘要： Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFETs, and a host of other applications.

2. 发明申请

US20160155496A1 LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM 有权
标题翻译： LIFETIME混合级非易失性存储器系统
公开(公告)号：US20160155496A1
公开(公告)日：2016-06-02
申请号：US14950553
申请日：2015-11-24
申请人： Greenthread, LLC
发明人： G.R. Mohan Rao
IPC分类号： G11C11/56 , G11C16/16
CPC分类号： G11C11/5635 , G06F11/1068 , G06F11/1072 , G06F12/0246 , G06F2212/7202 , G11C11/5621 , G11C11/5678 , G11C16/16 , G11C16/3495 , G11C29/52 , G11C29/76 , G11C2211/5641
摘要： A controller for managing at least one MLC non-volatile memory module and at least one SLC non-volatile memory module. The flash controller is adapted to determine if a range of addresses listed by an entry and mapped to said at least one MLC non-volatile memory module fails a data integrity test. In the event of such a failure, the controller remaps said entry to an equivalent range of addresses of said at least one SLC non-volatile memory module. The flash controller is further adapted to determine which of the blocks in the MLC and SLC non-volatile memory modules are accessed most frequently and allocating those blocks that receive frequent writes to the SLC non-volatile memory module and those blocks that receive infrequent writes to the MLC non-volatile memory module.
摘要翻译：一种用于管理至少一个MLC非易失性存储器模块和至少一个SLC非易失性存储器模块的控制器。闪存控制器适于确定由条目列出并映射到所述至少一个MLC非易失性存储器模块的地址范围是否失败了数据完整性测试。在这种故障的情况下，控制器将所述条目重新映射到所述至少一个SLC非易失性存储器模块的等效的地址范围。闪存控制器还适于确定MLC和SLC非易失性存储器模块中的哪些块被最频繁地访问，并将接收频繁写入的那些块分配给SLC非易失性存储器模块以及那些接收不频繁写入的块 MLC非易失性存储器模块。

3. 发明授权

US09196385B2 Lifetime mixed level non-volatile memory system 有权
标题翻译：终身混合级非易失性存储系统
公开(公告)号：US09196385B2
公开(公告)日：2015-11-24
申请号：US14525411
申请日：2014-10-28
申请人： GREENTHREAD, LLC
发明人： G. R. Mohan Rao
IPC分类号： G11C29/52 , G11C29/00 , G06F11/10 , G11C11/56
CPC分类号： G11C11/5635 , G06F11/1068 , G06F11/1072 , G06F12/0246 , G06F2212/7202 , G11C11/5621 , G11C11/5678 , G11C16/16 , G11C16/3495 , G11C29/52 , G11C29/76 , G11C2211/5641
摘要： A flash controller for managing at least one MLC non-volatile memory module and at least one SLC non-volatile memory module. The flash controller is adapted to determine if a range of addresses listed by an entry and mapped to said at least one MLC non-volatile memory module fails a data integrity test. In the event of such a failure, the controller remaps said entry to an equivalent range of addresses of said at least one SLC non-volatile memory module, The flash controller is farther adapted to determine which of the blocks in the MLC and SLC non-volatile memory modules are accessed most frequently and allocating those blocks that receive frequent writes to the SLC non-volatile memory module and those blocks that receive infrequent writes to the MLC non-volatile memory module.
摘要翻译：一种用于管理至少一个MLC非易失性存储器模块和至少一个SLC非易失性存储器模块的闪存控制器。闪存控制器适于确定由条目列出并映射到所述至少一个MLC非易失性存储器模块的地址范围是否失败了数据完整性测试。在这种故障的情况下，控制器将所述条目重新映射到所述至少一个SLC非易失性存储器模块的等效的地址范围。闪存控制器更适合于确定MLC和SLC非易失性存储器模块中的哪些块，易失性存储器模块被最频繁地访问，并将接收频繁写入的那些块分配给SLC非易失性存储器模块以及那些接收对MLC非易失性存储器模块的频繁写入的块。

4. 发明申请

US20220246725A1 SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONS 有权
公开(公告)号：US20220246725A1
公开(公告)日：2022-08-04
申请号：US17728588
申请日：2022-04-25
申请人： Greenthread, LLC
发明人： G.R. MOHAN RAO
IPC分类号： H01L29/10 , H01L27/11524 , H01L27/146 , H01L27/11521 , H01L29/739 , H01L29/36
摘要： Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFETs, and a host of other applications.

5. 发明授权

US10510842B2 Semiconductor devices with graded dopant regions 有权
公开(公告)号：US10510842B2
公开(公告)日：2019-12-17
申请号：US15590282
申请日：2017-05-09
申请人： GREENTHREAD, LLC
发明人： G.R. Mohan Rao
IPC分类号： H01L21/02 , H01L29/10 , H01L27/11524 , H01L27/146 , H01L27/11521 , H01L29/739 , H01L29/36 , H01L27/02 , H01L27/108
摘要： Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOFSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFETs, and a host of other applications.

6. 发明申请

US20170243876A1 SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONS 审中-公开
公开(公告)号：US20170243876A1
公开(公告)日：2017-08-24
申请号：US15590282
申请日：2017-05-09
申请人： GREENTHREAD, LLC
发明人： G.R. MOHAN RAO
IPC分类号： H01L27/11521 , H01L29/739 , H01L29/10 , H01L29/36 , H01L27/11524 , H01L27/146
CPC分类号： H01L29/1095 , H01L27/0214 , H01L27/10844 , H01L27/11521 , H01L27/11524 , H01L27/14643 , H01L29/36 , H01L29/7395
摘要： Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOFSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFETs, and a host of other applications.

7. 发明授权

US09647070B2 Semiconductor devices with graded dopant regions 有权
公开(公告)号：US09647070B2
公开(公告)日：2017-05-09
申请号：US14931636
申请日：2015-11-03
申请人： GREENTHREAD, LLC
发明人： G. R. Mohan Rao
IPC分类号： H01L21/02 , H01L29/10 , H01L27/11521 , H01L27/11524 , H01L27/146 , H01L29/739 , H01L29/36 , H01L27/02 , H01L27/108
CPC分类号： H01L29/1095 , H01L27/0214 , H01L27/10844 , H01L27/11521 , H01L27/11524 , H01L27/14643 , H01L29/36 , H01L29/7395
摘要： Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICS, improvement in refresh time for DRAM's, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFET's, and a host of other applications.

8. 发明申请

US20160172447A1 SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONS 有权
公开(公告)号：US20160172447A1
公开(公告)日：2016-06-16
申请号：US14931636
申请日：2015-11-03
申请人： GREENTHREAD, LLC
发明人： G.R. Mohan Rao
IPC分类号： H01L29/10 , H01L29/739
CPC分类号： H01L29/1095 , H01L27/0214 , H01L27/10844 , H01L27/11521 , H01L27/11524 , H01L27/14643 , H01L29/36 , H01L29/7395
摘要： Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved.Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICS, improvement in refresh time for DRAM's, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFET's, and a host of other applications.

9. 发明授权

US11316014B2 Semiconductor devices with graded dopant regions 有权
公开(公告)号：US11316014B2
公开(公告)日：2022-04-26
申请号：US17371839
申请日：2021-07-09
申请人： GREENTHREAD, LLC
发明人： G. R. Mohan Rao
IPC分类号： H01L29/10 , H01L27/11524 , H01L27/146 , H01L27/11521 , H01L29/739 , H01L29/36 , H01L27/02 , H01L27/108
摘要： Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for iFETs, and a host of other applications.

10. 发明授权

US11121222B2 Semiconductor devices with graded dopant regions 有权
公开(公告)号：US11121222B2
公开(公告)日：2021-09-14
申请号：US16947294
申请日：2020-07-27
申请人： GREENTHREAD, LLC
发明人： G.R. Mohan Rao
IPC分类号： H01L29/10 , H01L27/11524 , H01L27/146 , H01L27/11521 , H01L29/739 , H01L29/36 , H01L27/02 , H01L27/108
摘要： Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFETs, and a host of other applications.

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