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1. 发明申请

US20190080891A1 COATER 审中-公开
公开(公告)号：US20190080891A1
公开(公告)日：2019-03-14
申请号：US16079307
申请日：2017-02-24
申请人： GENCOA LTD
发明人： Victor Bellido-Gonzalez
IPC分类号： H01J37/34 , H01J37/32
摘要： This invention relates to generation and control of electron emission and transport in a plasma device for enhancing ionization in sputtering, including magnetron sputtering, ion treatment, thermal evaporation, electron beam evaporation. The device in combines a sputtering enhanced electron emission on a cathodic element in which a strong electrical field around the electron emission element is created. In addition, this electric field area is in a magnetically confined space of nearly null strength and/or magnetic mirror features. The electron emission area would also comprise of guided magnetic field extraction magnetic field paths which could be either permanent or created at pulse modes. Also, the invention relates to reactive process and coating deposition ion bombardment management. This invention also relates to the use in feedback control systems; manufacturing process and methods which use these devices and materials and components processed by the present invention are also part of the invention.

2. 发明授权

US10168672B2 Auto-tuning 有权
公开(公告)号：US10168672B2
公开(公告)日：2019-01-01
申请号：US14785585
申请日：2014-04-17
申请人： Gencoa Ltd.
发明人： Victor Bellido-Gonzalez , Dermot Patrick Monaghan , Joseph Brindley , Benoit Daniel
IPC分类号： G05B11/42 , G05B13/04 , G05B13/02
摘要： A method is provided for automated tuning and calibration of feedback control of systems and processes. A series of actuator pulses are automatically performed and, based on the gradient of the sensor response, information is determined on the dynamics of the system to be controlled in what is described as the system identification procedure. An automatic sensor calibration procedure is performed to determine the controller's window of operation. Based on the information collected during the system identification procedure, controller parameters are automatically calculated for a specified time for the sensor to reach a setpoint. A system that is managed and/or controlled by a controller and/or control algorithm is also provided. The disclosed method provides a scheme for parameterization of control algorithms.

3. 发明申请

US20210134571A1 IMPROVEMENTS IN AND RELATING TO COATING PROCESSES 有权
公开(公告)号：US20210134571A1
公开(公告)日：2021-05-06
申请号：US16640795
申请日：2018-08-21
申请人： GENCOA LTD , NANO4ENERGY SLNE
发明人： Victor BELLIDO-GONZALEZ , Iván FERNÁNDEZ , Ambiörn WENNBERG , Dermot Partick MONAGHAN
IPC分类号： H01J37/34 , C23C14/35 , H01J37/32
摘要： An apparatus (1b) and method of depleting a plasma of electrons in a plasma coating apparatus is disclosed. The invention involves generating a plasma comprising ions (9), particulate material (5) and electrons (6) adjacent a target (4); forming a plasma trap (52) to constrain the plasma near to the target (4), and depleting the plasma of electrons by: providing an additional magnetic field (8b) that is superimposed over the magnetic field of the plasma trap (3, 52), which extends beyond a boundary layer (52) of the plasma trap, and which draws electrons (6) from, or near to, the boundary layer (52) of the plasma trap away from the target (4). The invention proposes applying a baseline voltage (50) to the target (4); and by applying periodic voltage pulses (13b) to the target (4). The additional magnetic field (8b) depletes the plasma of electrons, such that when a voltage pulse (13b) is applied to the target (4), ions (9) can be ejected from the plasma with reduced electron shielding. This has been shown to improve ion bombardment and reduce adverse electron bombardment effects.

4. 发明授权

US09721769B2 In-vacuum rotational device 有权
公开(公告)号：US09721769B2
公开(公告)日：2017-08-01
申请号：US14372003
申请日：2013-01-14
申请人： Gencoa Ltd.
发明人： Jonathan Price
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3405 , C23C14/3407 , H01J37/342 , H01J37/3435
摘要： This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerization, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control. This invention also relates to the arrangement of these devices as a singularity or a plurality of units. This invention also relates to the target construction which can be used in such device. This invention also relates to the use of these devices in different power modes such as DC, DC pulsed, RF, AC, AC dual, HIPIMS, or any other powering mode in order to generate a plasma, such as sputtering plasma, plasma arc, electron beam evaporation, plasma polymerization plasma, plasma treatment or any other plasma generated for the purpose of a process, for example, and not exclusively, as deposition process or surface treatment process, etc.

5. 发明申请

US20150243484A1 Plasma Source 审中-公开
标题翻译：等离子源
公开(公告)号：US20150243484A1
公开(公告)日：2015-08-27
申请号：US14427579
申请日：2013-09-11
申请人： GENCOA LTD
发明人： Victor Bellido-Gonzalez
IPC分类号： H01J37/32 , C23C16/50 , C23C14/22 , H01J37/34
CPC分类号： H01J37/3266 , C23C14/22 , C23C14/34 , C23C16/50 , H01J37/32055 , H01J37/32651 , H01J37/3402 , H01J37/3405 , H01J37/3408 , H01J2237/332
摘要： This invention relates to magnetically enhanced cathodic plasma deposition and cathodic plasma discharges where the charged particles can be guided in a rarefied vacuum system. Specifically, a cluster or combination of cathodic plasma sources is described where a least two plasma source units are arranged in a rarefied gas vacuum system in such way that the resulting magnetic field interaction offers a guided channelling escape path of electrons in essentially perpendicular direction to the main bulk of neutral particles and droplets generated in the cathodic plasma source. In addition the cathodic plasma source arrangement of the present invention would generate a zone of very low magnetic field where the electrons are trapped via electric and magnetic fields. Ions generated by the plasma cluster would follow electrons via escape paths determined by electric and magnetic fields. The direction for the ions is fundamentally different from those of the neutral particles offering in this manner a charged particles filtering method. The invention could take form in different embodiments and different arrangements of these plasma clusters, interacting by magnetic interactions in such a way that the plasma would cross areas for the desired plasma treatment and/or coating of suitable substrates.
摘要翻译：本发明涉及磁性增强的阴极等离子体沉积和阴极等离子体放电，其中带电粒子可以在稀薄的真空系统中引导。具体地，描述了阴极等离子体源的簇或组合，其中至少两个等离子体源单元被布置在稀薄气体真空系统中，使得所得到的磁场相互作用提供电子的引导通道逃逸路径在基本垂直于在阴极等离子体源中产生的中性粒子和液滴的主要体积。此外，本发明的阴极等离子体源装置将产生非常低磁场的区域，其中电子经由电场和磁场被捕获。由等离子体簇产生的离子将通过由电场和磁场确定的逃生路径跟随电子。离子的方向与以这种方式提供的带电粒子过滤方法的中性粒子的方向基本上不同。本发明可以采取不同实施例的形式和这些等离子体簇的不同布置，通过磁相互作用相互作用，使得等离子体将跨越所需等离子体处理和/或涂覆合适基底的区域。

6. 发明申请

US20180261428A1 ION SOURCE SPUTTERING 审中-公开
公开(公告)号：US20180261428A1
公开(公告)日：2018-09-13
申请号：US15759966
申请日：2016-10-11
申请人： GENCOA LTD
发明人： Victor Bellido-Gonzalez
IPC分类号： H01J37/32 , H01J37/34
CPC分类号： H01J37/32027 , H01J37/32045 , H01J37/32422 , H01J37/32568 , H01J37/342 , H01J37/3438 , H01J37/3444
摘要： An ion source comprising: an electrode; a counter electrode; means for generating an electrical potential between the electrode and counter-electrode; one or more magnets arranged, in use, to confine a plasma generated around the electrode upon application of the said electrical potential; and an aperture in the counter-electrode through which ions from the said plasma can escape; characterized in that: the means for generating an electrical potential between the electrode and counter electrode comprises a DC signal generator that is: electrically connected to the electrode and the counter-electrode; adapted, in use, to apply a baseline DC potential to the electrode and the counter-electrode with the DC potential at the electrode being positive relative to the DC potential at the counter electrode; and adapted, in use, to apply a sequence of DC pulses superimposed onto the baseline DC potential.

7. 发明申请

US20160050916A1 BIO CONTROL ACTIVITY SURFACE 审中-公开
标题翻译：生物控制活动表面
公开(公告)号：US20160050916A1
公开(公告)日：2016-02-25
申请号：US14888242
申请日：2014-04-01
申请人： GENCOA LTD
发明人： Victor BELLIDO-GONZALEZ , Dermot Patrick MONAGHAN
IPC分类号： A01N25/34 , A01N59/20 , C23C14/35 , A61L31/16 , C23C16/56 , C23C14/58 , A01N59/16 , A01N59/00
CPC分类号： A01N25/34 , A01N59/00 , A01N59/16 , A01N59/20 , A61L31/16 , A61L2300/404 , B82Y5/00 , C23C14/35 , C23C14/5826 , C23C14/584 , C23C14/5846 , C23C14/5873 , C23C16/56 , A01N25/12
摘要： A bio control surface (100) comprising a substrate (5) and a first plurality of discrete, spaced-apart particles (1) disposed on the substrate (5) and a second plurality of discrete, spaced-apart particles (6) disposed on the substrate (5), wherein the first (1) and second (6) pluralities of discrete, spaced-apart particles are formed from species having different chemical and/or electrical properties. An intermediate layer (4) may be interposed between the particles (1, 6) and the substrate (5). The bio control surface (100) can be activated by exposure to particular conditions, which cause the first (1) and second (6) pluralities of particles to adopt different potentials (+, −), such that flow of charge, heat, ions etc. can be used to neutralise or kill bacteria or microorganisms resident on the surface (100).
摘要翻译：生物控制表面（100），包括基底（5）和设置在基底（5）上的第一多个离散的间隔开的颗粒（1）和第二多个离散的间隔开的颗粒（6）所述基板（5），其中所述第一（1）和第二（6）多个离散的间隔开的颗粒由具有不同化学和/或电特性的物质形成。中间层（4）可以介于颗粒（1,6）和基底（5）之间。可以通过暴露于特定条件来激活生物控制表面（100），这导致第一（1）和第二（6）个颗粒采用不同的电位（+， - ），使得电荷，热，离子等等可用于中和或杀死驻留在表面上的细菌或微生物（100）。

8. 发明申请

US20150008120A1 IN-VACUUM ROTATIONAL DEVICE 有权
标题翻译：真空旋转装置
公开(公告)号：US20150008120A1
公开(公告)日：2015-01-08
申请号：US14372003
申请日：2013-01-14
申请人： Gencoa Ltd.
发明人： Jonathan Price
IPC分类号： H01J37/34
CPC分类号： H01J37/3405 , C23C14/3407 , H01J37/342 , H01J37/3435
摘要： This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerisation, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control. This invention also relates to the arrangement of these devices as a singularity or a plurality of units. This invention also relates to the target construction which can be used in such device. This invention also relates to the use of these devices in different power modes such as DC, DC pulsed, RF, AC, AC dual, HIPIMS, or any other powering mode in order to generate a plasma, such as sputtering plasma, plasma arc, electron beam evaporation, plasma polymerization plasma, plasma treatment or any other plasma generated for the purpose of a process, for example, and not exclusively, as deposition process or surface treatment process, etc.
摘要翻译：本发明涉及圆柱形磁控溅射源上的真空内旋转装置，其中这种装置的目标结构的目标元件能够转动而不需要真空至大气或真空到冷却剂动态密封。本发明涉及该装置在真空等离子体技术中的应用，其中等离子体放电或任何其它适当的能量源（例如弧，激光）可以施加到靶或其附近将产生合适的涂层沉积或等离子体处理对不同性质的成分。本发明还涉及但不限于在溅射，磁控溅射，电弧，等离子体聚合，激光烧蚀和等离子体蚀刻中使用该装置。本发明还涉及在具有或不具有反馈等离子体过程控制的非反应性和反应性过程中这种装置的使用和控制。本发明还涉及这些装置作为奇点或多个单元的布置。本发明还涉及可用于这种装置中的目标结构。本发明还涉及这些器件在诸如DC，DC脉冲，RF，AC，AC双重，HIPIMS或任何其它供电模式的不同功率模式中的用途，以便产生等离子体，例如溅射等离子体，等离子弧，电子束蒸发，等离子体聚合等离子体，等离子体处理或为了工艺目的而产生的任何其他等离子体，例如但不限于沉积工艺或表面处理工艺等。

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