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1. 发明授权

US08492293B1 High density selective deposition of carbon nanotubes onto a substrate 有权
公开(公告)号：US08492293B1
公开(公告)日：2013-07-23
申请号：US13595432
申请日：2012-08-27
申请人： Ali Afzali-Ardakani , Hongsik Park , George S. Tulevski
发明人： Ali Afzali-Ardakani , Hongsik Park , George S. Tulevski
IPC分类号： H01L21/00 , H01L51/40 , H01L21/31 , H01L21/469
CPC分类号： H01L51/0595 , B82Y10/00 , B82Y30/00 , H01L21/3105 , H01L51/0048
摘要： Methods for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.

2. 发明申请

US20130143356A1 N-Dopant for Carbon Nanotubes and Graphene 有权
标题翻译：碳纳米管和石墨烯的N掺杂剂
公开(公告)号：US20130143356A1
公开(公告)日：2013-06-06
申请号：US13308974
申请日：2011-12-01
申请人： Ali Afzali-Ardakani , Bhupesh Chandra , George S. Tulevski
发明人： Ali Afzali-Ardakani , Bhupesh Chandra , George S. Tulevski
IPC分类号： H01L51/40 , B82Y99/00
CPC分类号： H01L51/0558 , B82Y10/00 , B82Y40/00 , H01L51/0018 , H01L51/002 , H01L51/0048 , H01L51/0072 , H01L51/055 , Y10S977/846 , Y10S977/938
摘要： A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula: wherein in the dihydrotetraazapentacene chemical structure, each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group.
摘要翻译：用于形成具有稳定的n掺杂纳米组分的场效应晶体管的组合物和方法。该方法包括在栅极上形成栅极电介质，在栅极电介质上形成包含纳米成分的沟道，在纳米元件的第一区域上形成源极，在纳米元件的第二区域上形成漏极，形成场效应晶体管，并且将场效应晶体管的纳米组分的一部分暴露于二氢四氮杂萘以产生稳定的n掺杂纳米组分，其中二氢四氮杂芳烃由下式表示：其中在二氢四氮杂碳酸化学结构中， R1，R2，R3和R4可以是氢，C1〜C16碳的烷基，烷氧基，烷硫基，三烷基硅烷基，羟甲基，羧酸基或羧酸酯基。

3. 发明申请

US20130130077A1 COMPOSITE ANODE STRUCTURE FOR HIGH ENERGY DENSITY LITHIUM-ION BATTERIES 有权
标题翻译：用于高能密度锂离子电池的复合阳极结构
公开(公告)号：US20130130077A1
公开(公告)日：2013-05-23
申请号：US13302576
申请日：2011-11-22
申请人： MOSTAFA M. EL-ASHRY , Osama Tobail , George S. Tulevski
发明人： MOSTAFA M. EL-ASHRY , Osama Tobail , George S. Tulevski
IPC分类号： H01M4/00 , B05D5/00 , H01M4/70 , H01M4/40 , B82Y30/00
CPC分类号： H01M4/1395 , B82Y30/00 , H01M4/134 , H01M4/661 , H01M4/663 , H01M4/667 , H01M4/70 , H01M10/0525 , Y02E60/122
摘要： An electrode includes a conductive substrate and a plurality of conductive structures providing a compressible matrix of material. An active material is formed in contact with the plurality of conductive structures. The active material includes a volumetrically expanding material which expands during ion diffusion such that the plurality of conductive structures provides support for the active material and compensates for volumetric expansion of the active material to prevent damage to the active material.
摘要翻译：电极包括导电衬底和提供可压缩材料矩阵的多个导电结构。形成与多个导电结构接触的活性材料。活性材料包括体积扩大的材料，其在离子扩散期间膨胀，使得多个导电结构为活性材料提供支撑并且补偿活性材料的体积膨胀以防止损坏活性材料。

4. 发明申请

US20120000516A1 Graphene Solar Cell 审中-公开
标题翻译：石墨烯太阳能电池
公开(公告)号：US20120000516A1
公开(公告)日：2012-01-05
申请号：US12828446
申请日：2010-07-01
申请人： Ageeth A. Bol , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Dennis M. Newns , Razvan A. Nistor , George S. Tulevski
发明人： Ageeth A. Bol , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Dennis M. Newns , Razvan A. Nistor , George S. Tulevski
IPC分类号： H01L31/0288 , H01L31/18 , H01L31/0256
CPC分类号： H01L31/022433 , H01L31/022491 , H01L31/075 , Y02E10/548
摘要： A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion.
摘要翻译：太阳能电池包括半导体部分，设置在半导体部分的第一表面上的石墨烯层和在石墨烯层上图案化的第一导电层，第一导电层包括至少一个汇流条部分和从所述至少一个汇流条部分。

5. 发明申请

US20110180777A1 METHOD OF PLACING A SEMICONDUCTING NANOSTRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTING NANOSTRUCTURE 有权
标题翻译：放置半导体纳米结构的方法和包括半导体纳米结构的半导体器件
公开(公告)号：US20110180777A1
公开(公告)日：2011-07-28
申请号：US13077216
申请日：2011-03-31
申请人： Ali Afzali-Ardakani , Supratik Guha , Cherie R. Kagan , George S. Tulevski , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Supratik Guha , Cherie R. Kagan , George S. Tulevski , Emanuel Tutuc
IPC分类号： H01L29/12 , H01L29/775 , B82Y99/00
CPC分类号： H01L51/0049 , B82Y10/00 , H01L51/0012
摘要： A semiconductor device includes a bonding surface, a semiconducting nanostructure including one of a nanowire and a nanocrystal, which is formed on the bonding surface, and a source electrode and a drain electrode which are formed on the nanostructure such that the nanostructure is electrically connected to the source and drain electrodes.
摘要翻译：半导体器件包括形成在接合表面上的接合表面，包括纳米线和纳米晶体之一的半导体纳米结构，以及形成在纳米结构上的源电极和漏电极，使得纳米结构电连接到源极和漏极。

6. 发明申请

US20100143847A1 PHOTOSENSITIVE SELF-ASSEMBLED MONOLAYER FOR SELECTIVE PLACEMENT OF HYDROPHILIC STRUCTURES 有权
标题翻译：用于选择性放置水文结构的感光自组装单声道
公开(公告)号：US20100143847A1
公开(公告)日：2010-06-10
申请号：US12541231
申请日：2009-08-14
申请人： Ali Afzali-Ardakani , Teresita O. Graham , James B. Hannon , George S. Tulevski
发明人： Ali Afzali-Ardakani , Teresita O. Graham , James B. Hannon , George S. Tulevski
IPC分类号： G03F7/20
CPC分类号： C07F9/4056 , C07C271/20 , G03F7/0045 , G03F7/165 , Y10S430/106 , Y10T428/24802 , Y10T428/31678
摘要： A photosensitive monolayer is self-assembled on an oxide surface. The chemical compound of the photosensitive monolayer has three components. A first end group provides covalent bonds with the oxide surface for self assembly on the oxide surface. A photosensitive group that dissociates upon exposure to ultraviolet radiation is linked to the first end group. A second end group linked to the photosensitive group provides hydrophobicity. Upon exposure to the ultraviolet radiation, the dissociated photosensitive group is cleaved and forms a hydrophilic derivative in the exposed region, rendering the exposed region hydrophilic. Carbon nanotubes or nanocrystals applied in an aqueous dispersion are selectively attracted to the hydrophilic exposed region to from electrostatic bonding with the hydrophilic surface of the cleaved photosensitive group.
摘要翻译：感光单层在氧化物表面上自组装。感光单层的化合物具有三个成分。第一端基与氧化物表面提供共价键，用于在氧化物表面上自组装。在暴露于紫外线辐射下解离的感光基团与第一末端基团连接。与光敏基团连接的第二端基提供疏水性。在暴露于紫外线照射下，解离的感光基团被切割并在曝光区域中形成亲水性衍生物，使曝光区域亲水。施加在水性分散体中的碳纳米管或纳米晶体被选择性地吸附到亲水性暴露区域以与被切割的光敏基团的亲水表面进行静电键合。

7. 发明申请

US20090291041A1 METHODS FOR SEPERATING CARBON NANOTUBES BY ENHANCING THE DENSITY DIFFERENTIAL 失效
标题翻译：通过增强密度差异来分离碳纳米管的方法
公开(公告)号：US20090291041A1
公开(公告)日：2009-11-26
申请号：US12124278
申请日：2008-05-21
申请人： Ali Afzali-Ardakani , James B. Hannon , Cherie R. Kagan , George S. Tulevski
发明人： Ali Afzali-Ardakani , James B. Hannon , Cherie R. Kagan , George S. Tulevski
IPC分类号： D01F9/12
CPC分类号： B03D3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/172 , C01B32/174 , C01B2202/28 , C01B2202/36 , C01P2004/13 , H01L51/0025 , H01L51/0049 , Y10S977/748 , Y10S977/751 , Y10S977/845 , Y10S977/847
摘要： A method for separating carbon nanotubes comprises: providing a mixture of carbon nanotubes; introducing an organic molecule having an end group capable of being chelated by a metal ion to the mixture of carbon nanotubes to covalently bond the organic molecule to at least one of the mixture of carbon nanotubes; and introducing a metal salt to the mixture of carbon nanotubes to chelate the end group of the organic molecule with the metal ion of the metal salt; and centrifuging the mixture of carbon nanotubes to cause the separation of the carbon nanotubes based on a density differential of the carbon nanotubes.
摘要翻译：分离碳纳米管的方法包括：提供碳纳米管的混合物; 将具有能够被金属离子螯合的端基的有机分子引入到碳纳米管的混合物中，以将有机分子共价键合到至少一种碳纳米管的混合物中; 并将金属盐引入到碳纳米管的混合物中以与金属盐的金属离子螯合有机分子的端基; 并将碳纳米管的混合物离心以根据碳纳米管的密度差来分离碳纳米管。

8. 发明授权

US09331330B2 Composite anode structure for high energy density lithium-ion batteries 有权
标题翻译：用于高能量密度锂离子电池的复合阳极结构
公开(公告)号：US09331330B2
公开(公告)日：2016-05-03
申请号：US13302576
申请日：2011-11-22
申请人： Mostafa M. El-Ashry , Osama Tobail , George S. Tulevski
发明人： Mostafa M. El-Ashry , Osama Tobail , George S. Tulevski
IPC分类号： H01M4/134 , H01M4/75 , H01M4/1395 , H01M10/0525 , H01M4/66 , H01M4/70 , B82Y30/00
CPC分类号： H01M4/1395 , B82Y30/00 , H01M4/134 , H01M4/661 , H01M4/663 , H01M4/667 , H01M4/70 , H01M10/0525 , Y02E60/122
摘要： An electrode includes a conductive substrate and a plurality of conductive structures providing a compressible matrix of material. An active material is formed in contact with the plurality of conductive structures. The active material includes a volumetrically expanding material which expands during ion diffusion such that the plurality of conductive structures provides support for the active material and compensates for volumetric expansion of the active material to prevent damage to the active material.
摘要翻译：电极包括导电衬底和提供可压缩材料矩阵的多个导电结构。形成与多个导电结构接触的活性材料。活性材料包括体积扩大的材料，其在离子扩散期间膨胀，使得多个导电结构为活性材料提供支撑并且补偿活性材料的体积膨胀以防止损坏活性材料。

9. 发明授权

US08912525B2 Chemical oxidation of graphene and carbon nanotubes using Cerium (IV) ammonium nitrate 有权
标题翻译：使用硝酸铈（IV）硝酸铵对石墨烯和碳纳米管进行化学氧化
公开(公告)号：US08912525B2
公开(公告)日：2014-12-16
申请号：US13329115
申请日：2011-12-16
申请人： Ali Afzali-Ardakani , Bhupesh Chandra , George S. Tulevski
发明人： Ali Afzali-Ardakani , Bhupesh Chandra , George S. Tulevski
IPC分类号： H01L29/06
CPC分类号： H01L29/78 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/194
摘要： A process comprises combining a Ce (IV) salt with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid and is dissolved in a solvent comprising water. The process is conducted under conditions to substantially oxidize the carbon material to produce an oxidized material that is substantially non-conducting. After the oxidation, the Ce (IV) is substantially removed from the oxidized material. This produces a product made by the process. An article of manufacture comprises the product on a substrate. The oxidized material can be formed as a pattern on the substrate. In another embodiment the substrate comprises an electronic device with the oxidized material patterning non-conductive areas separate from conductive areas of the non-oxidized carbon material, where the conductive areas are operatively associated with the device.
摘要翻译：一种方法包括将Ce（IV）盐与包含CNT或石墨烯的碳材料组合，其中Ce（IV）盐选自氮氧化物的Ce（IV）铵盐，并溶解在包含水的溶剂中。该方法在基本上氧化碳材料以产生基本不导电的氧化材料的条件下进行。在氧化之后，Ce（IV）从氧化物质中大体上去除。这产生了由该过程制成的产品。制品包括在基材上的产品。氧化物可以形成为基板上的图案。在另一个实施例中，衬底包括电子器件，其中氧化材料图案化非导电区域与非氧化碳材料的导电区域分离，其中导电区域与器件可操作地相关联。

10. 发明授权

US08786018B2 Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition 有权
标题翻译：使用选择性电介质沉积的自对准碳纳米结构场效应晶体管
公开(公告)号：US08786018B2
公开(公告)日：2014-07-22
申请号：US13610158
申请日：2012-09-11
申请人： Damon B. Farmer , Aaron D. Franklin , Shu-Jen Han , George S. Tulevski
发明人： Damon B. Farmer , Aaron D. Franklin , Shu-Jen Han , George S. Tulevski
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78669 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/775 , H01L29/78678 , H01L29/78696 , H01L51/0048 , H01L51/0516 , Y10S977/742
摘要： Self-aligned carbon nanostructure field effect transistor structures are provided, which are formed using selective dielectric deposition techniques. For example, a transistor device includes an insulating substrate and a gate electrode embedded in the insulating substrate. A dielectric deposition-prohibiting layer is formed on a surface of the insulating substrate surrounding the gate electrode. A gate dielectric is selectively formed on the gate electrode. A channel structure (such as a carbon nanostructure) is disposed on the gate dielectric A passivation layer is selectively formed on the gate dielectric. Source and drain contacts are formed on opposing sides of the passivation layer in contact with the channel structure. The dielectric deposition-prohibiting layer prevents deposition of dielectric material on a surface of the insulating layer surrounding the gate electrode when selectively forming the gate dielectric and passivation layer.
摘要翻译：提供了使用选择性电介质沉积技术形成的自对准碳纳米结构场效应晶体管结构。例如，晶体管器件包括绝缘衬底和嵌入绝缘衬底中的栅电极。在围绕栅电极的绝缘基板的表面上形成介电沉积禁止层。选择性地在栅电极上形成栅极电介质。沟道结构（例如碳纳米结构）设置在栅极电介质上钝化层选择性地形成在栅极电介质上。源极和漏极触点形成在与沟道结构接触的钝化层的相对侧上。当选择性地形成栅极电介质和钝化层时，介电沉积禁止层防止介电材料沉积在围绕栅电极的绝缘层的表面上。

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