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1. 发明申请

US20220302855A1 UPPER ARM DRIVE CIRCUIT, DRIVE CIRCUIT OF POWER CONVERSION DEVICE, AND POWER CONVERSION DEVICE 有权
公开(公告)号：US20220302855A1
公开(公告)日：2022-09-22
申请号：US17578044
申请日：2022-01-18
申请人： Hitachi Power Semiconductor Device, Ltd.
发明人： Satoshi Iesaka , Kenji Sakurai
IPC分类号： H02M7/5387 , H02M1/08 , H03K17/687 , H03K17/567
摘要： The upper arm drive circuit for controlling the drive of an upper arm switching element of the power conversion device includes: an upper arm gate voltage output wiring connected to a gate of the upper arm switching element; a first upper arm drive circuit reference potential wiring; an upper arm gate voltage reference potential wiring connected to an inverter output of the power conversion device; and a control circuit of upper arm drive circuit reference potential wiring potential for controlling the potential of the first upper arm drive circuit reference potential wiring to a potential lower than a reference potential when a potential of the inverter output is equal to a predefined potential that is lower than the reference potential or lower. The first upper arm drive circuit reference potential wiring is connected to the reference potential via the control circuit of upper arm drive circuit reference potential wiring potential.

2. 发明申请

US20220199786A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220199786A1
公开(公告)日：2022-06-23
申请号：US17532741
申请日：2021-11-22
申请人： Hitachi Power Semiconductor Device, Ltd.
发明人： Shigeo Tokumitsu , Masaki Shiraishi , Yutaka Kato , Tetsuo Oda
IPC分类号： H01L29/40 , H01L29/12 , H01L21/02 , H01L29/06
摘要： Provided is a highly reliable semiconductor device in which an influence on device characteristics can be reduced while improving a high temperature and high humidity bias resistance of a termination structure (termination region) of a chip by a relatively simple method. The semiconductor device includes an active region disposed on a main surface of a semiconductor substrate, and a termination region disposed on the main surface so as to surround the active region. The termination region includes an interlayer insulating film formed on the main surface of the semiconductor substrate, and an organic protective film formed so as to cover the interlayer insulating film. An insulating film having a thickness of 100 nm or less and containing nitrogen is provided between the interlayer insulating film and the organic protective film.

3. 发明授权

US11282937B2 Semiconductor device and power conversion device 有权
公开(公告)号：US11282937B2
公开(公告)日：2022-03-22
申请号：US16976393
申请日：2019-02-01
申请人： Hitachi Power Semiconductor Device, Ltd.
发明人： Mutsuhiro Mori , Tomoyuki Miyoshi , Tomoyasu Furukawa , Masaki Shiraishi
IPC分类号： H01L29/47 , H01L29/78 , H01L29/868
摘要： The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.

4. 发明授权

US11049965B2 Semiconductor device and alternator using the same 有权
公开(公告)号：US11049965B2
公开(公告)日：2021-06-29
申请号：US16056332
申请日：2018-08-06
申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
发明人： Masaki Shiraishi , Tetsuya Ishimaru , Junichi Sakano , Mutsuhiro Mori , Shinichi Kurita
IPC分类号： H01L29/78 , H01L29/66 , H01L29/10 , H03K17/0814 , H03K17/74 , H01L27/02 , H01L29/45
摘要： A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.

5. 发明申请

US20190288082A1 SEMICONDUCTOR DEVICE, POWER MODULE, AND POWER CONVERSION DEVICE 审中-公开
公开(公告)号：US20190288082A1
公开(公告)日：2019-09-19
申请号：US16189608
申请日：2018-11-13
申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
发明人： Masakazu SAGAWA , Takashi ISHIGAKI
IPC分类号： H01L29/40 , H01L29/16 , H01L29/06 , H01L29/78 , H01L29/423 , H01L23/522 , H01L29/66
摘要： A semiconductor device including an n-type semiconductor layer formed on a substrate, having a cell region and a gate pad region, and including silicon carbide, and a unit cell formed in the cell region is configured as follows. A p-type body region formed in the semiconductor layer of the gate pad region, a first insulating film formed on the p-type body region, a conductive film formed on the first insulating film, and a second insulating film formed on the conductive film, and a gate pad formed on the second insulating film. Then, the film thickness of the first insulating film is 0.7 μm or more, and more favorably 1.5 μm or more. In addition, the electric field strength of the first insulating film is 3 MV/cm or less. Then, an opening portion is formed on the first insulating film in the gate pad region, and a resistance portion and a connection portion corresponding to the conductive film are formed in the opening portion.

6. 发明授权

US10205314B2 Rectifier including MOSFET and hold circuit that boosts gate voltage of MOSFET, and alternator using the same 有权
公开(公告)号：US10205314B2
公开(公告)日：2019-02-12
申请号：US15819315
申请日：2017-11-21
申请人： Hitachi Power Semiconductor Device, Ltd.
发明人： Tetsuya Ishimaru , Mutsuhiro Mori , Shinichi Kurita
IPC分类号： H02H7/06 , H02M3/335 , H02M7/219 , H02J7/14 , H02K11/04 , H02M1/08 , H02M7/217
摘要： A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.

7. 发明授权

US10079536B2 Rectifier, alternator using same and power supply using same 有权
公开(公告)号：US10079536B2
公开(公告)日：2018-09-18
申请号：US15297565
申请日：2016-10-19
申请人： Hitachi Power Semiconductor Device, Ltd.
发明人： Tetsuya Ishimaru , Shinichi Kurita , Takeshi Terakawa
IPC分类号： H02M1/36 , H02K7/00 , H02K11/04 , H02M7/217 , H02M1/08 , H03K17/30 , H02M7/219
CPC分类号： H02M1/36 , H02K7/006 , H02K11/046 , H02M1/08 , H02M7/217 , H02M7/219 , H03K17/30 , H03K17/302 , H03K2017/307 , H03K2217/0081 , Y02B70/1408
摘要： The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of the comparator. The control circuit includes the shutoff MOSFET for performing shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator and the shutoff control circuit performing electrical shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator by turning off the shutoff MOSFET when a voltage of the drain of the rectification MOSFET is equal to or higher than a first predetermined voltage.

8. 发明授权

US09991336B2 Semiconductor device, method for manufacturing the same, and power conversion system 有权
公开(公告)号：US09991336B2
公开(公告)日：2018-06-05
申请号：US15695670
申请日：2017-09-05
申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
发明人： Masatoshi Wakagi , Taiga Arai , Mutsuhiro Mori , Tomoyasu Furukawa
IPC分类号： H01L29/36 , H01L29/06 , H01L27/06 , H01L29/66 , H01L21/322 , H02M7/5395 , H01L29/861 , H02P27/08
CPC分类号： H01L29/0638 , H01L21/3225 , H01L27/0664 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/861 , H02M7/5395 , H02P27/08
摘要： An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an n− layer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the n− layer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 μm from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×1017 cm−3 or more and also the oxygen concentration of the n− layer in a position in contact with the p-type layer is set to less than 3×1017 cm−3.

9. 发明授权

US09531368B2 Semiconductor switch circuit, signal processing apparatus, and ultrasound diagnostic apparatus 有权
标题翻译：半导体开关电路，信号处理装置和超声波诊断装置
公开(公告)号：US09531368B2
公开(公告)日：2016-12-27
申请号：US14461382
申请日：2014-08-16
申请人： Hitachi Power Semiconductor Device, Ltd.
发明人： Hironobu Honda , Fumiaki Yamashita , Junichi Aizawa
IPC分类号： H03K17/10 , A61B8/00 , H03K17/687 , H03K17/06 , H03K17/082
CPC分类号： H03K17/102 , A61B8/4444 , H03K17/063 , H03K17/0822 , H03K17/6871 , H03K17/6874 , H03K2017/066 , H03K2217/0009 , H03K2217/0054
摘要： A semiconductor switch circuit comprises: a first switch pair including two MOSFETs having gates connected one another and sources connected to one another, and a zener diode reversely connected between the gates and sources of the MOSFETs; a second switch pair including two MOSFETs having gates connected one another and sources connected to one another, and a zener diode reversely connected between the gates and sources of the MOSFETs; and a third switch pair comprising two MOSFETs having gates connected to one another and sources connected to one another. The first switch pair and the second switch pair are connected in series between two input/output terminals through a connecting node. The third switch pair is connected to the connecting node between the first switch pair and the second switch pair.
摘要翻译：一种半导体开关电路包括：第一开关对，其包括具有彼此连接的栅极和彼此连接的源极的两个MOSFET;以及反向连接在MOSFET的栅极和源极之间的齐纳二极管; 第二开关对，其包括具有彼此连接的栅极和彼此连接的源极的两个MOSFET;以及反向连接在MOSFET的栅极和源极之间的齐纳二极管; 以及第三开关对，其包括具有彼此连接的栅极和彼此连接的源极的两个MOSFET。第一开关对和第二开关对通过连接节点串联连接在两个输入/输出端子之间。第三开关对连接到第一开关对和第二开关对之间的连接节点。

10. 发明申请

US20160315553A1 Rectifier, Alternator, and Power Converter 有权
标题翻译：整流器，发电机和电源转换器
公开(公告)号：US20160315553A1
公开(公告)日：2016-10-27
申请号：US15104116
申请日：2014-12-12
申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
发明人： Tetsuya ISHIMARU , Kohhei ONDA , Junichi SAKANO , Mutsuhiro MORI
IPC分类号： H02M7/04 , H02M1/08 , H03K17/16
CPC分类号： H02M7/04 , H02M1/08 , H02M7/219 , H02M2001/0029 , H02M2007/2195 , H03K17/163 , Y02B70/1408
摘要： A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.
摘要翻译：提供了包括自主型同步整流MOSFET的整流器，其在施加噪声时防止由故障引起的颤动和通电。整流器包括：用于执行同步整流的整流MOSFET; 确定电路，被配置为输入整流MOSFET的一对主端子之间的电压，并且基于所输入的电压来确定整流MOSFET是否处于导通或截止状态; 以及栅极驱动电路，其被配置为使得通过来自所述确定电路的比较信号使所述整流MOSFET的栅极导通和截止，并且使得当所述整流MOSFET导通时提高栅极电压所需的时间长于整流MOSFET关断时降低栅极电压所需的时间。

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