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1. 发明授权

US07534008B2 Backlight unit and light source for use in same 失效
标题翻译：背光单元和光源用于相同
公开(公告)号：US07534008B2
公开(公告)日：2009-05-19
申请号：US11431591
申请日：2006-05-11
申请人： Dae Hyun Kim , Hae Yong Lee , Yong Won Choi
发明人： Dae Hyun Kim , Hae Yong Lee , Yong Won Choi
IPC分类号： F21V9/00 , F21V5/00
CPC分类号： G02B3/005 , G02B3/04 , G02F1/133603 , G02F1/133609
摘要： A backlight unit includes a substrate, a plurality of light emitting diodes disposed at corners of a polygon or arranged side by side on the substrate, and a plurality of lenses coupled to the light emitting diodes for directing the lights emitted from the light emitting diodes in a predetermined direction. The light emitting diodes are comprised of at least three light emitting diodes capable of cooperating with each other to create a white light. Each of the lenses has an asymmetrical irradiation characteristic such that the lenses allow the lights to be irradiated on a predetermined target region and uniformly mixed with each other. The lenses are designed and oriented to irradiate the lights in an elliptical shape close to a rectangle toward a top portion of the backlight unit.
摘要翻译：背光单元包括基板，设置在多边形的角部并且并排布置在基板上的多个发光二极管，以及耦合到发光二极管的多个透镜，用于将发光二极管发出的光引导到预定方向。发光二极管由能够彼此协作以产生白光的至少三个发光二极管组成。每个透镜具有不对称的照射特性，使得透镜允许光照射在预定的目标区域上并且彼此均匀地混合。透镜被设计和定向成将近似矩形的椭圆形的光照射到背光单元的顶部。

2. 发明申请

US20110101307A1 SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于半导体器件的衬底及其制造方法
公开(公告)号：US20110101307A1
公开(公告)日：2011-05-05
申请号：US12917970
申请日：2010-11-02
申请人： Hae Yong LEE , Young Jun CHOI , Jung Gyu KIM , Hyun Hee HWANG
发明人： Hae Yong LEE , Young Jun CHOI , Jung Gyu KIM , Hyun Hee HWANG
IPC分类号： H01L29/15 , H01L21/306
CPC分类号： H01L21/0237 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254
摘要： Provided are a semiconductor substrate including an uneven structure disposed on a surface of a substrate, a buffer layer disposed on the uneven structure, the buffer layer having an acicular structure, a compound semiconductor layer disposed on the buffer layer to planarize the uneven structure, and a plurality of voids defined between the substrate and the compound semiconductor layer, and a method for manufacturing the same. Thus, since the acicular structure disposed on the uneven structure of the substrate forms the voids on an interface between the substrate and the single crystal GaN layer to relax a stress due to a lattice mismatch and intercept propagation of a breakdown potential, a warpage characteristic of the grown single crystal GaN layer may be reduced, as well as, crystallinity may be improved.
摘要翻译：提供了一种半导体衬底，其包括设置在衬底的表面上的不均匀结构，设置在不平坦结构上的缓冲层，具有针状结构的缓冲层，设置在缓冲层上以使不平坦结构平坦化的化合物半导体层，以及限定在基板和化合物半导体层之间的多个空隙及其制造方法。因此，由于设置在基板的不平坦结构上的针状结构在基板和单晶GaN层之间的界面上形成空隙，以松弛由于击穿电位的晶格失配和截距传播引起的应力，所以翘曲特性可以减少生长的单晶GaN层，以及可以提高结晶度。

3. 发明申请

US20100065443A1 DENTAL IMPLANT PACKAGE 有权
标题翻译：牙科植入物包
公开(公告)号：US20100065443A1
公开(公告)日：2010-03-18
申请号：US12441861
申请日：2006-12-13
申请人： Kwang Bum Park , Kyoung Ho Ryoo , Seok Kyu Choi , Hae Yong Lee
发明人： Kwang Bum Park , Kyoung Ho Ryoo , Seok Kyu Choi , Hae Yong Lee
IPC分类号： A61C19/10
CPC分类号： A61C8/0087
摘要： A dental implant package includes a main body having a partition portion that is formed therein and separates a fixture accommodation space accommodating a fixture of a dental implant from an auxiliary accommodation space accommodating any of a healing abutment and a cover screw, wherein a first opening and a second opening are formed at both ends of the main body, a leveler accommodated in at least a part of the fixture accommodation space and supporting the fixture accommodated in the fixture accommodation space at a predetermined height, a first cover detachably coupled to the main body and blocking the first opening, and a second cover detachably coupled to the main body and blocking the second opening. The fixture and any of the healing abutment and the cover screw can be stored with a simple structure. Also, the fixture and the healing abutment or the cover screw can be easily pulled out during an implant operation.
摘要翻译：牙科植入物包装体包括具有形成在其中的分隔部分的主体，其将容纳牙科植入物的固定物的固定容纳空间与容纳任何愈合基牙和盖螺钉的辅助容纳空间分开，其中第一开口和第二开口形成在主体的两端，容纳在固定装置容纳空间的至少一部分中的调平器，并以预定的高度支撑容纳在固定装置容纳空间中的固定装置;第一盖，可拆卸地联接到主体并且阻挡第一开口，以及可拆卸地联接到主体并阻塞第二开口的第二盖。固定装置和任何一个愈合的基座和盖螺丝可以以简单的结构储存。此外，在植入操作期间，夹具和愈合基座或盖螺钉可以容易地拉出。

4. 发明授权

US07621998B2 Single crystalline gallium nitride thick film having reduced bending deformation 失效
标题翻译：单晶氮化镓厚膜具有减小的弯曲变形
公开(公告)号：US07621998B2
公开(公告)日：2009-11-24
申请号：US11286219
申请日：2005-11-23
申请人： Changho Lee , Hyun Min Shin , Sun-Hwan Kong , Hae Yong Lee
发明人： Changho Lee , Hyun Min Shin , Sun-Hwan Kong , Hae Yong Lee
IPC分类号： C30B23/00 , C30B28/12 , H01L29/74 , H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0257 , H01L21/02609 , H01L21/0262
摘要： The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt angle of C-axis to the direction per surface distance of 0.0022°/mm exhibits little bending deformation even at a thickness of 1 mm or more, and therefore, is beneficially used as a substrate for a luminescent device.
摘要翻译：本发明涉及具有显着减小的弯曲变形的独立，厚的单晶氮化镓（GaN）膜。具有0.0022°/ mm的每个表面距离的C轴与<0001>方向的晶体倾斜角度的本发明GaN膜即使在1mm以上的厚度也表现出小的弯曲变形，因此有利地用作基板用于发光装置。

5. 发明申请

US20050247260A1 Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereof 审中-公开
标题翻译：非极性单晶a面氮化物半导体晶片及其制备
公开(公告)号：US20050247260A1
公开(公告)日：2005-11-10
申请号：US11117683
申请日：2005-04-28
申请人： Hyunmin Shin , Hae-Yong Lee , Changho Lee , Hyun-Suk Kim , Chong-Don Kim , Sun-Hwan Kong
发明人： Hyunmin Shin , Hae-Yong Lee , Changho Lee , Hyun-Suk Kim , Chong-Don Kim , Sun-Hwan Kong
IPC分类号： C30B29/38 , C23C16/34 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/205 , C30B25/00
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18
摘要： A single crystalline a-plane nitride semiconductor wafer having no voids, bending or cracks can be rapidly and effectively prepared by hydride vapor phase epitaxy (HVPE) growth of the a-plane nitride semiconductor film on a single crystalline r-plane sapphire substrate at a temperature ranging from 950 to 1,100° C. and at a rate ranging from 30 to 300 μm/hr.
摘要翻译：通过在单晶R平面蓝宝石衬底上的a面氮化物半导体膜的氢化物气相外延（HVPE）生长，可以快速且有效地制备不具有空隙，弯曲或裂纹的单晶α-面氮化物半导体晶片温度范围为950〜1100℃，速度为30〜300mum / hr。

6. 发明授权

US08729670B2 Semiconductor substrate and method for manufacturing the same 有权
标题翻译：半导体基板及其制造方法
公开(公告)号：US08729670B2
公开(公告)日：2014-05-20
申请号：US12935978
申请日：2009-04-15
申请人： Hae Yong Lee , Young Jun Choi , Jung Gyu Kim
发明人： Hae Yong Lee , Young Jun Choi , Jung Gyu Kim
IPC分类号： H01L21/20 , H01L29/20
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02491 , H01L21/02513 , H01L21/0254 , H01L21/02614 , H01L21/02656 , H01L33/007
摘要： Provided is a semiconductor substrate and a method for manufacturing the same. The semiconductor substrate includes a substrate, a discontinuously formed hemispheric metal layer on the substrate, and a semiconductor layer on the hemispheric metal layer. A plurality of voids on the interface of the substrate and discontinuous hemisphere are formed to absorb or relax the stain of interface. Accordingly, even if a subsequent layer is relatively thickly formed on the substrate, substrate bow or warpage can be minimized.
摘要翻译：提供一种半导体衬底及其制造方法。半导体衬底包括衬底，衬底上的不连续形成的半球金属层，以及半球金属层上的半导体层。形成在基板和不连续半球的界面上的多个空隙，以吸收或松弛界面的污点。因此，即使后续层相对厚地形成在基板上，也可以使基板翘曲或翘曲最小化。

7. 发明申请

US20110024878A1 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体基板及其制造方法
公开(公告)号：US20110024878A1
公开(公告)日：2011-02-03
申请号：US12935978
申请日：2009-04-15
申请人： Hae Yong Lee , Young Jun Choi , Jung Gyu Kim
发明人： Hae Yong Lee , Young Jun Choi , Jung Gyu Kim
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02491 , H01L21/02513 , H01L21/0254 , H01L21/02614 , H01L21/02656 , H01L33/007
摘要： Provided is a semiconductor substrate and a method for manufacturing the same. The semiconductor substrate includes a substrate, a discontinuously formed hemispheric metal layer on the substrate, and a semiconductor layer on the hemispheric metal layer. A plurality of voids on the interface of the substrate and discontinuous hemisphere are formed to absorb or relax the stain of interface. Accordingly, even if a subsequent layer is relatively thickly formed on the substrate, substrate bow or warpage can be minimized.
摘要翻译：提供一种半导体衬底及其制造方法。半导体衬底包括衬底，衬底上的不连续形成的半球金属层，以及半球金属层上的半导体层。形成在基板和不连续半球的界面上的多个空隙，以吸收或松弛界面的污点。因此，即使后续层相对厚地形成在基板上，也可以使基板翘曲或翘曲最小化。

8. 发明授权

US07315045B2 Sapphire/gallium nitride laminate having reduced bending deformation 有权
标题翻译：蓝宝石/氮化镓层压板具有减小的弯曲变形
公开(公告)号：US07315045B2
公开(公告)日：2008-01-01
申请号：US11045688
申请日：2005-01-28
申请人： Chang Ho Lee , Hae Yong Lee , Choon Kon Kim
发明人： Chang Ho Lee , Hae Yong Lee , Choon Kon Kim
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01S5/0213 , H01S2304/12 , Y10T428/24628
摘要： The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I): Y=Y0+A·e−(x−1)/T (I) wherein Y is the curvature radius (m) of a sapphire/gallium nitride laminate, X is the thickness (μm) of a gallium nitride film, Y0 is 5.47±0.34, A is 24.13±0.50, and T is 0.56±0.04. The inventive laminate can be advantageously used in the manufacture of a high quality electronic device.
摘要翻译：蓝宝石/氮化镓层压板本发明涉及蓝宝石/氮化镓层压板，其曲率半径位于从以下功能式（I）绘制的第一曲线的右侧：<？in-line-formula description =“In-line 公式“end =”lead“？> Y = Y <0> Ae - （x-1）/ T（I）<？in-line-formula description =” 其中Y是蓝宝石/氮化镓层叠体的曲率半径（μm），X是氮化镓膜的厚度（mum），Y <0 为5.47±0.34，A为24.13±0.50，T为0.56±0.04。本发明的层压板可以有利地用于制造高质量的电子设备。

9. 发明授权

US07854316B2 Dental implant package 有权
标题翻译：牙科植入包
公开(公告)号：US07854316B2
公开(公告)日：2010-12-21
申请号：US12441861
申请日：2006-12-13
申请人： Kwang Bum Park , Kyoung Ho Ryoo , Seok Kyu Choi , Hae Yong Lee
发明人： Kwang Bum Park , Kyoung Ho Ryoo , Seok Kyu Choi , Hae Yong Lee
IPC分类号： A61B19/02
CPC分类号： A61C8/0087
摘要： A dental implant package includes a main body having a partition portion that is formed therein and separates a fixture accommodation space accommodating a fixture of a dental implant from an auxiliary accommodation space accommodating any of a healing abutment and a cover screw, wherein a first opening and a second opening are formed at both ends of the main body, a leveler accommodated in at least a part of the fixture accommodation space and supporting the fixture accommodated in the fixture accommodation space at a predetermined height, a first cover detachably coupled to the main body and blocking the first opening, and a second cover detachably coupled to the main body and blocking the second opening. The fixture and any of the healing abutment and the cover screw can be stored with a simple structure. Also, the fixture and the healing abutment or the cover screw can be easily pulled out during an implant operation.
摘要翻译：牙科植入物包装体包括具有形成在其中的分隔部分的主体，其将容纳牙科植入物的固定物的固定容纳空间与容纳任何愈合基牙和盖螺钉的辅助容纳空间分开，其中第一开口和第二开口形成在主体的两端，容纳在固定装置容纳空间的至少一部分中的调平器，并以预定的高度支撑容纳在固定装置容纳空间中的固定装置;第一盖，可拆卸地联接到主体并且阻挡第一开口，以及可拆卸地联接到主体并阻塞第二开口的第二盖。固定装置和任何一个愈合的基座和盖螺丝可以以简单的结构储存。此外，在植入操作期间，夹具和愈合基座或盖螺钉可以容易地拉出。

10. 发明授权

US07518151B2 Gallium nitride/sapphire thin film having reduced bending deformation 有权
标题翻译：具有减小的弯曲变形的氮化镓/蓝宝石薄膜
公开(公告)号：US07518151B2
公开(公告)日：2009-04-14
申请号：US11869080
申请日：2007-10-09
申请人： Chang Ho Lee , Hae Yong Lee , Choon Kon Kim , Kisoo Lee
发明人： Chang Ho Lee , Hae Yong Lee , Choon Kon Kim , Kisoo Lee
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01S5/0213 , H01S2304/12 , Y10T428/24628
摘要： The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): Y=Y0+A·e−(x1−1)/T1+B·(1−e−x2/T2) (I) wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x1 is the thickness (μm) of a gallium nitride layer, x2 is the thickness (mm) of a sapphire substrate, Y0 is −107±2.5, A is 24.13±0.50, B is 141±4.5, T1 is 0.56±0.04, and T2 is 0.265±0.5.
摘要翻译：本发明涉及一种氮化镓/蓝宝石薄膜，其曲率半径位于从以下函数式（I）绘制的曲线的右侧：<？in-line-formula description =“In-line 公式“end =”lead“？> Y = Y0 + Ae-（x 1）/ T + B。（1-ex / sub2> / T 2 ）（I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Y是a的曲率半径氮化镓/蓝宝石薄膜，x1是氮化镓层的厚度（mum），x2是蓝宝石衬底的厚度（mm），Y0为-107±2.5，A为24.13±0.50，B为141±4.5 ，T1为0.56±0.04，T2为0.265±0.5。

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