专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08609304B2 Method of manufacturing a transfer mask and method of manufacturing a semiconductor device 有权
标题翻译：制造转印掩模的方法和制造半导体器件的方法
公开(公告)号：US08609304B2
公开(公告)日：2013-12-17
申请号：US13436132
申请日：2012-03-30
申请人： Masaru Tanabe , Hideaki Mitsui , Naoki Nishida , Satoshi Iwashita
发明人： Masaru Tanabe , Hideaki Mitsui , Naoki Nishida , Satoshi Iwashita
IPC分类号： G03F1/50
CPC分类号： G03F1/84 , G03F1/70 , G03F1/72
摘要： An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
摘要翻译：使用检查装置的透射光量分布数据检测转印掩模的内部缺陷等。使用管芯间的比较检查方法，将检查光照射到薄膜的第一区域以获得第一透射光量分布，也将检查光照射到薄膜的第二区域，以获得第二透射光通过绘制从第一透射光量分布和第二透射光量分布之间的比较计算出的差光量值分别不小于第一阈值的坐标，并产生预定范围的差分布，小于第二阈值，并且选择在预定范围差分布中未检测到具有高密度绘图密度的区域的转印掩模。

2. 发明授权

US08021806B2 Photomask blank, photomask, and methods of manufacturing the same 有权
标题翻译：光掩模坯料，光掩模及其制造方法
公开(公告)号：US08021806B2
公开(公告)日：2011-09-20
申请号：US12493641
申请日：2009-06-29
申请人： Masahiro Hashimoto , Hideaki Mitsui
发明人： Masahiro Hashimoto , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/38 , G03F1/32 , G03F1/34 , G03F1/80
摘要： A photomask blank for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. An etching mask film serving as an etching mask when forming a phase shift part is provided on the front surface side, where the phase shift part is to be formed, of the substrate. A light-shielding film serving to shield exposure light is provided on the back surface side (opposite-side surface) of the substrate.
摘要翻译：一种用于制造相移掩模的光掩模坯料，其具有设置有相移部分的透光衬底，该相移部件适于对透射的曝光光产生预定的相位差。在形成相移部分时用作蚀刻掩模的蚀刻掩模膜设置在衬底的形成相移部分的正面上。用于屏蔽曝光光的遮光膜设置在基板的背面侧（相对侧面）。

3. 发明授权

US07592106B2 Halftone type phase shift mask blank and phase shift mask thereof 有权
标题翻译：半色调型相移掩模空白及其相移掩模
公开(公告)号：US07592106B2
公开(公告)日：2009-09-22
申请号：US11562217
申请日：2006-11-21
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译：一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

4. 发明申请

US20070092808A1 HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF 有权
标题翻译： HALFTONE类型相移屏蔽区和相位移屏蔽
公开(公告)号：US20070092808A1
公开(公告)日：2007-04-26
申请号：US11562217
申请日：2006-11-21
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译：一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

5. 发明授权

US06783634B2 Manufacturing method and apparatus of phase shift mask blank 有权
标题翻译：相移掩模空白的制造方法和装置
公开(公告)号：US06783634B2
公开(公告)日：2004-08-31
申请号：US09952445
申请日：2001-09-12
申请人： Osamu Nozawa , Hideaki Mitsui
发明人： Osamu Nozawa , Hideaki Mitsui
IPC分类号： C23C1434
CPC分类号： G03F1/32 , C23C14/0036 , C23C14/0641 , C23C14/225 , C23C14/505 , G03F1/26 , G03F1/68
摘要： There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
摘要翻译：公开了一种相移掩模坯料的制造方法，其中可以尽可能地减少坯料之间的相位角和透射率的分散，并且产率令人满意。在相移掩模空白的制造方法中，使用溅射法在透明基板上连续地形成薄膜的工艺包括：依次对多个基板进行一系列将透明基板供应到溅射室在溅射室中形成用于形成图案的薄膜，并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。

6. 发明授权

US6087047A Phase shift mask and phase shift mask blank 失效
标题翻译：相移掩模和相移掩模空白
公开(公告)号：US6087047A
公开(公告)日：2000-07-11
申请号：US153027
申请日：1998-09-15
申请人： Hideaki Mitsui , Osamu Nozawa , Megumi Takeuchi
发明人： Hideaki Mitsui , Osamu Nozawa , Megumi Takeuchi
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： In a half-tone type phase shift mask blank in which a semi-transparent film is formed on a transparent substrate, and the semi-transparent film serves to shift phase of a first optical light beam which transmits the semi-transparent film for a second optical light beam which directly transmits the transparent substrate and further, serves to reduce strength of the first optical light beam, the semi-transparent film includes silicon and nickel, and at least one selected from the group consisting of nitrogen, oxygen and hydrogen, and the relationship between the silicon and the nickel is specified by a formula in which a rate of [atom % of the nickel in the film] for [atom % of the nickel in the film+atom % of the silicon in the film] falls within the range between 0.15 and 0.5.
摘要翻译：在透明基板上形成半透明膜的半色调型相移掩模坯料中，半透明膜用于将透过半透明膜的第一光束的相位偏移一秒直接透过透明基板的光束，进一步降低第一光束的强度，半透明膜包括硅和镍，以及选自氮，氧和氢的至少一种，以及硅和镍之间的关系由以下公式确定：其中[膜中的镍原子％的原子％的原子％与膜中的硅的原子％的比率]落入其中范围在0.15和0.5之间。

7. 发明授权

US5955223A Phase-shift mask blank and process for the production thereof comprising a semi transparent film with silicon and nitrogen 失效
标题翻译：相移掩模空白及其制造方法，其包括具有硅和氮的半透明膜
公开(公告)号：US5955223A
公开(公告)日：1999-09-21
申请号：US816942
申请日：1997-03-14
申请人： Hideaki Mitsui , Kenji Matsumoto , Yoichi Yamaguchi
发明人： Hideaki Mitsui , Kenji Matsumoto , Yoichi Yamaguchi
IPC分类号： F02G5/00 , F02M45/04 , F02M47/00 , F02M47/02 , F02M51/06 , F02M57/02 , F02M59/10 , F02M59/36 , F02M59/46 , F02M63/00 , G03F1/00 , G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： PURPOSE: To provide the phase shift mask which can be produced while the generation of microdefects is suppressed with relatively simple stages and with which pattern transfer with a high resolution is possible and the phase shift mask blank which is the blank material thereof.CONSTITUTION: The mask patterns to be formed on a transparent substrate 1 of this phase shift mask are composed of light transparent parts 4 which allow the transmission of light of the intensity substantially contributing to exposing and light translucent parts 2 which allow the transmission of the light of the intensity substantially contributing to exposing. The phase shift mask is so formed that the phase of the light past the light translucent parts 2 and the phase of the light past the light transparent parts 4 are varied by shifting the phase of the light passing the light translucent parts 2, by which the light rays passing near the boundary parts of the light transparent parts 4 and the light translucent parts 2 are negated with each other and the contrast in the boundary parts is well maintained. The light translucent parts 2 are composed of thin films consisting of materials consisting of oxygen, molybdenum and silicide as main constituting elements.
摘要翻译：目的：提供可以在相对简单的阶段抑制微缺陷的产生并且可以以高分辨率进行图案转印并且作为其空白材料的相移掩模坯料的同时产生的相移掩模。构成：在该相移掩模的透明基板1上形成的掩模图案由透光部分4构成，透光部分4允许传播强度大致有助于曝光的光和透光部分2，光透射部分2允许透射光的强度基本上有助于曝光。相移掩模被形成为使得通过光半透明部分2的光的相位和光通过光透射部分4的相位通过偏移通过光半透明部分2的光的相位而变化，由此通过透光部4和光半透明部2的边界附近的光线相互抵消，边界部的对比度保持良好。光半透明部分2由作为主要构成元素的由氧，钼和硅化物组成的材料构成的薄膜构成。

8. 发明申请

US20120251928A1 METHOD OF MANUFACTURING A TRANSFER MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造转移掩模的方法和制造半导体器件的方法
公开(公告)号：US20120251928A1
公开(公告)日：2012-10-04
申请号：US13436132
申请日：2012-03-30
申请人： Masaru TANABE , Hideaki MITSUI , Naoki NISHIDA , Satoshi IWASHITA
发明人： Masaru TANABE , Hideaki MITSUI , Naoki NISHIDA , Satoshi IWASHITA
IPC分类号： G03F1/84 , G03F7/20
CPC分类号： G03F1/84 , G03F1/70 , G03F1/72
摘要： An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
摘要翻译：使用检查装置的透射光量分布数据检测转印掩模的内部缺陷等。使用管芯间的比较检查方法，将检查光照射到薄膜的第一区域以获得第一透射光量分布，也将检查光照射到薄膜的第二区域，以获得第二透射光通过绘制从第一透射光量分布和第二透射光量分布之间的比较计算出的差光量值分别不小于第一阈值的坐标，并产生预定范围的差分布，小于第二阈值，并且选择在预定范围差分布中未检测到具有高密度绘图密度的区域的转印掩模。

9. 发明授权

US07862963B2 Halftone type phase shift mask blank and phase shift mask thereof 有权
标题翻译：半色调型相移掩模空白及其相移掩模
公开(公告)号：US07862963B2
公开(公告)日：2011-01-04
申请号：US12542282
申请日：2009-08-17
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译：一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

10. 发明申请

US20070187228A1 Manufacturing Method and Apparatus of Phase Shift Mask Blank 有权
标题翻译：相移掩模空白的制造方法和装置
公开(公告)号：US20070187228A1
公开(公告)日：2007-08-16
申请号：US11688680
申请日：2007-03-20
申请人： Osamu Nozawa , Hideaki Mitsui
发明人： Osamu Nozawa , Hideaki Mitsui
IPC分类号： C23C14/00
CPC分类号： G03F1/32 , C23C14/0036 , C23C14/0641 , C23C14/225 , C23C14/505 , G03F1/26 , G03F1/68
摘要： There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
摘要翻译：公开了一种相移掩模坯料的制造方法，其中可以尽可能地减少坯料之间的相位角和透射率的分散，并且产率令人满意。在相移掩模空白的制造方法中，使用溅射法在透明基板上连续地形成薄膜的工艺包括：依次对多个基板进行一系列将透明基板供应到溅射室在溅射室中形成用于形成图案的薄膜，并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式