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    • 1. 发明授权
    • Method of manufacturing a transfer mask and method of manufacturing a semiconductor device
    • 制造转印掩模的方法和制造半导体器件的方法
    • US08609304B2
    • 2013-12-17
    • US13436132
    • 2012-03-30
    • Masaru TanabeHideaki MitsuiNaoki NishidaSatoshi Iwashita
    • Masaru TanabeHideaki MitsuiNaoki NishidaSatoshi Iwashita
    • G03F1/50
    • G03F1/84G03F1/70G03F1/72
    • An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
    • 使用检查装置的透射光量分布数据检测转印掩模的内部缺陷等。 使用管芯间的比较检查方法,将检查光照射到薄膜的第一区域以获得第一透射光量分布,也将检查光照射到薄膜的第二区域,以获得第二透射光 通过绘制从第一透射光量分布和第二透射光量分布之间的比较计算出的差光量值分别不小于第一阈值的坐标,并产生预定范围的差分布, 小于第二阈值,并且选择在预定范围差分布中未检测到具有高密度绘图密度的区域的转印掩模。