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1. 发明申请

US20100163740A1 RADIATION DETECTION APPARATUS 审中-公开
标题翻译：辐射检测装置
公开(公告)号：US20100163740A1
公开(公告)日：2010-07-01
申请号：US12665485
申请日：2007-08-10
申请人： Hideharu Matsuura
发明人： Hideharu Matsuura
IPC分类号： G01T1/24
CPC分类号： G01T1/241 , H01L31/022408 , H01L31/085
摘要： A semiconductor substrate is composed of a SiC crystal. A metal film having a desired area and serving as an incident surface onto which X-rays are made incident is formed on one surface of the semiconductor substrate. An electrode having the shape of a circle is formed at the central portion of the other surface of the semiconductor substrate. A ring-shaped electrode is formed in a portion near the circumference of the semiconductor substrate so as to surround the electrode. A predetermined direct voltage is applied to the metal film and the ring-shaped electrode. A voltage of a ground level is applied to the electrode. X-rays (γ-rays) that are made incident onto the metal film cause the generation of electron-hole pairs in the semiconductor substrate. The generated electrons are collected at the electrode and drawn as electric signals from an output terminal.
摘要翻译：半导体衬底由SiC晶体组成。在半导体衬底的一个表面上形成具有所需区域并用作入射X射线的入射表面的金属膜。在半导体衬底的另一个表面的中心部分处形成具有圆形形状的电极。环形电极形成在半导体衬底的圆周附近，以包围电极。对金属膜和环状电极施加预定的直流电压。对电极施加地电位的电压。入射到金属膜上的X射线（γ射线）导致在半导体衬底中产生电子 - 空穴对。所产生的电子被收集在电极处并作为来自输出端子的电信号绘制。

2. 发明授权

US4532373A Amorphous photovoltaic solar cell 失效
标题翻译：无定型光伏太阳能电池
公开(公告)号：US4532373A
公开(公告)日：1985-07-30
申请号：US589324
申请日：1984-03-14
申请人： Hideharu Matsuura , Kazunobu Tanaka , Akihisa Matsuda , Hideyo Okushi , Hidetoshi Oheda , Satoshi Yamasaki , Nobuhiro Hata
发明人： Hideharu Matsuura , Kazunobu Tanaka , Akihisa Matsuda , Hideyo Okushi , Hidetoshi Oheda , Satoshi Yamasaki , Nobuhiro Hata
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/06 , H01L31/07
CPC分类号： H01L31/022425 , H01L31/06 , H01L31/07 , Y02E10/50
摘要： An amorphous photovoltaic energy conversion element for use in a solar cell is composed of a first layer formed of a p-type material, a second layer formed of an intrinsic amorphous semiconductor having a potential gradient formed therein and a third layer formed of a metal capable of coming into ohmic contact with the aforementioned intrinsic layer of amorphous semiconductor and exhibiting a lower work function than the work function of the intrinsic layer of amorphous semiconductor.
摘要翻译：用于太阳能电池的非晶形光伏能量转换元件由由p型材料形成的第一层，由其中形成有电位梯度的本征非晶半导体形成的第二层和由金属形成的第三层组成与上述非晶半导体本征层进行欧姆接触，并且具有比非晶半导体本征层的功函数更低的功函数。

3. 发明授权

US08314468B2 Variable ring width SDD 有权
标题翻译：可变环宽SDD
公开(公告)号：US08314468B2
公开(公告)日：2012-11-20
申请号：US12617313
申请日：2009-11-12
申请人： Derek Hullinger , Hideharu Matsuura , Kazuo Taniguchi , Tadashi Utaka
发明人： Derek Hullinger , Hideharu Matsuura , Kazuo Taniguchi , Tadashi Utaka
IPC分类号： H01L31/115
CPC分类号： G01T1/2928 , H01L31/115
摘要： A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.
摘要翻译：包括电隔离环的硅漂移检测器（SDD）。环可以是单独偏置的掺杂环。一个实施例包括具有单个掺杂环的SDD。掺杂环中的一些可能不需要偏置电压。一些环可以是场板环。场板环可以使用与单个外掺杂环相同的偏置电压。环宽度可以变化，使得最外面的环是最宽的，并且环宽度随着每个随后的环朝向阳极而减小。

4. 发明申请

US20100314706A1 VARIABLE RING WIDTH SDD 有权
标题翻译：可变环宽度SDD
公开(公告)号：US20100314706A1
公开(公告)日：2010-12-16
申请号：US12617313
申请日：2009-11-12
申请人： Derek Hullinger , Hideharu Matsuura , Kazuo Taniguchi , Tadashi Utaka
发明人： Derek Hullinger , Hideharu Matsuura , Kazuo Taniguchi , Tadashi Utaka
IPC分类号： H01L31/02
CPC分类号： G01T1/2928 , H01L31/115
摘要： A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.
摘要翻译：包括电隔离环的硅漂移检测器（SDD）。环可以是单独偏置的掺杂环。一个实施例包括具有单个掺杂环的SDD。掺杂环中的一些可能不需要偏置电压。一些环可以是场板环。场板环可以使用与单个外掺杂环相同的偏置电压。环宽度可以变化，使得最外面的环是最宽的，并且环宽度随着每个随后的环朝向阳极而减小。

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