会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明申请
    • METHOD AND SYSTEM FOR PROVIDING A HARD BIAS CAPPING LAYER
    • 一种用于提供硬偏置覆盖层的方法和系统
    • US20090244789A1
    • 2009-10-01
    • US12060724
    • 2008-04-01
    • Liubo HongHonglin Zhu
    • Liubo HongHonglin Zhu
    • G11B5/33
    • H01L43/12H01L43/08
    • The method and system for providing a magnetoresistive device are disclosed. The magnetoresistive device is formed from a plurality of magnetoresistive layer. The method and system include providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method and system include depositing hard bias layer(s). The method and system also include providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method and system also include performing a planarization. The planarization stop layer is configured for the planarization.
    • 公开了一种提供磁阻器件的方法和系统。 磁阻器件由多个磁阻层形成。 该方法和系统包括提供掩模。 掩模在至少一个器件区域中覆盖磁阻元件层的第一部分。 使用掩模限定磁阻元件。 该方法和系统包括沉积硬偏压层。 该方法和系统还包括在硬偏压层上提供硬偏压盖结构。 硬偏压盖结构包括第一保护层和平坦化停止层。 第一保护层位于平坦化停止层和硬偏压层之间。 该方法和系统还包括执行平面化。 平坦化停止层被配置为用于平坦化。
    • 7. 发明授权
    • Magnetoresistive device with a hard bias capping layer
    • 具有硬偏压盖层的磁阻器件
    • US08614864B1
    • 2013-12-24
    • US13467354
    • 2012-05-09
    • Liubo HongHonglin Zhu
    • Liubo HongHonglin Zhu
    • G11B5/39
    • H01L43/12H01L43/08
    • A magnetoresistive device is provided. The device includes at least one magnetoresistive element having at least one side, at least one hard bias layer in proximity to the at least one side of the at least one magnetic element, and a hard bias capping structure on the at least one hard bias layer. The hard bias capping structure includes a protective layer covering at least a first portion of the at least one hard bias layer and a planarization stop layer covering a second portion of the at least one hard bias layer. A portion of the protective layer resides between the planarization stop layer and the at least one hard bias layer.
    • 提供了一种磁阻器件。 该器件包括至少一个具有至少一个侧面的磁阻元件,在至少一个磁性元件的至少一个侧面附近的至少一个硬偏置层,以及在该至少一个硬偏置层上的硬偏压封盖结构 。 所述硬偏压封盖结构包括覆盖所述至少一个硬偏置层的至少第一部分的保护层和覆盖所述至少一个硬偏置层的第二部分的平坦化停止层。 保护层的一部分位于平坦化停止层和至少一个硬偏压层之间。