专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110117709A1 SEMICONDUCTOR DEVICE FABRICATING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20110117709A1
公开(公告)日：2011-05-19
申请号：US12618585
申请日：2009-11-13
申请人： Chih-Ping LIN , Shih-Ming CHEN , Hsiao-Ying YANG , Wen-Hsien LIU , Po-Sheng HU
发明人： Chih-Ping LIN , Shih-Ming CHEN , Hsiao-Ying YANG , Wen-Hsien LIU , Po-Sheng HU
IPC分类号： H01L21/8238
CPC分类号： H01L21/823462
摘要： A semiconductor device fabricating method is described. The semiconductor device fabricating method includes providing a substrate. A first gate insulating layer and a second gate insulating layer are formed on the substrate, respectively. A gate layer is blanketly formed. A portion of the gate layer, the first gate insulating layer and the second gate insulating layer are removed to form a first gate, a remaining first gate insulating layer, a second gate and a remaining second gate insulating layer. The remaining first gate insulating layer not covered by the first gate has a first thickness, and the remaining second gate insulating layer not covered by the second gate has a second thickness, wherein a ratio between the first thickness and the second thickness is about 10 to 20. A pair of first spacers and a pair of second spacers are formed on sidewalls of the first gate and the second gate, respectively.
摘要翻译：描述半导体器件制造方法。半导体器件制造方法包括提供衬底。分别在基板上形成第一栅极绝缘层和第二栅极绝缘层。门层完全形成。去除栅极层，第一栅极绝缘层和第二栅极绝缘层的一部分以形成第一栅极，剩余的第一栅极绝缘层，第二栅极和剩余的第二栅极绝缘层。未被第一栅极覆盖的剩余的第一栅极绝缘层具有第一厚度，并且未被第二栅极覆盖的剩余的第二栅极绝缘层具有第二厚度，其中第一厚度和第二厚度之间的比率为约10度分别在第一栅极和第二栅极的侧壁上形成一对第一间隔物和一对第二间隔物。

2. 发明申请

US20110062500A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110062500A1
公开(公告)日：2011-03-17
申请号：US12953347
申请日：2010-11-23
申请人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
发明人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
IPC分类号： H01L29/80
CPC分类号： H01L29/7836 , H01L29/0653
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.
摘要翻译：提供半导体器件及其制造方法。半导体器件包括半导体衬底，其包括第一类型阱和第二类型阱以及它们之间的多个结区域，其中每个连接区域邻接第一和第二类型阱。栅电极，设置在半导体衬底上并覆盖至少两个接合区域。源极和漏极在与栅电极相对的半导体衬底中。

3. 发明申请

US20090236681A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090236681A1
公开(公告)日：2009-09-24
申请号：US12177779
申请日：2008-07-22
申请人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
发明人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
IPC分类号： H01L29/00 , H01L21/76
CPC分类号： H01L21/823481 , H01L21/823412 , H01L21/823493 , H01L21/823807 , H01L21/823878 , H01L21/823892
摘要： A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.
摘要翻译：提供一种制造半导体器件的方法。提供了包括P阱的衬底。在P井中定义了低压装置区域和高压装置区域。在基板上形成光致抗蚀剂层。提供了包括屏蔽区域的光掩模。屏蔽区域对应于高电压设备区域。通过使用光掩模的光刻工艺将光掩模的图案转移到基板上的光致抗蚀剂层。通过使用光致抗蚀剂层作为掩模，通过将P型离子选择性地掺杂到衬底中，在高电压器件区域的外部形成P型离子场。

4. 发明申请

US20050042811A1 Gate process and gate structure for an embedded memory device 有权
公开(公告)号：US20050042811A1
公开(公告)日：2005-02-24
申请号：US10951763
申请日：2004-09-29
申请人： Shih-Ming Chen , Hsiao-Ying Yang
发明人： Shih-Ming Chen , Hsiao-Ying Yang
IPC分类号： H01L21/00 , H01L21/336 , H01L21/8247 , H01L27/105
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11531
摘要： A gate process and a gate process for an embedded memory device. A semiconductor silicon substrate has a memory cell area and a logic circuit area. A first dielectric layer is formed overlying the semiconductor silicon substrate, and then a gate structure is formed overlying the first dielectric layer of the memory cell area. Next, a protective layer is formed overlying the first dielectric layer and the top and sidewall of the gate structure. Next, an insulating spacer is formed overlying the protective layer disposed overlying the sidewall of the gate structure. Next, a pre-cleaning process is performed to remove the protective layer and the first dielectric layer overlying the logic circuit area. Next, a second dielectric layer is formed overlying the logic circuit area, and then a gate layer is formed overlying the second dielectric layer of the logic circuit area.

5. 发明申请

US20120056295A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120056295A1
公开(公告)日：2012-03-08
申请号：US13294945
申请日：2011-11-11
申请人： CHIH-PING LIN , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
发明人： CHIH-PING LIN , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
IPC分类号： H01L27/06
CPC分类号： H01L21/823481 , H01L21/823412 , H01L21/823493 , H01L21/823807 , H01L21/823878 , H01L21/823892
摘要： A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.
摘要翻译：提供一种制造半导体器件的方法。提供了包括P阱的衬底。在P井中定义了低压装置区域和高压装置区域。在基板上形成光致抗蚀剂层。提供了包括屏蔽区域的光掩模。屏蔽区域对应于高电压设备区域。通过使用光掩模的光刻工艺将光掩模的图案转移到基板上的光致抗蚀剂层。通过使用光致抗蚀剂层作为掩模，通过将P型离子选择性地掺杂到衬底中，在高电压器件区域的外部形成P型离子场。

6. 发明申请

US20090236665A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090236665A1
公开(公告)日：2009-09-24
申请号：US12177766
申请日：2008-07-22
申请人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
发明人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
IPC分类号： H01L21/336 , H01L29/78 , H01L21/027
CPC分类号： H01L29/7836 , H01L29/0653
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.
摘要翻译：提供半导体器件及其制造方法。半导体器件包括半导体衬底，其包括第一类型阱和第二类型阱以及它们之间的多个结区域，其中每个连接区域邻接第一和第二类型阱。栅电极，设置在半导体衬底上并覆盖至少两个接合区域。源极和漏极在与栅电极相对的半导体衬底中。

7. 发明授权

US06482702B1 Method of forming and recognizing an identification mark for read-only memory 有权
标题翻译：形成和识别只读存储器识别标记的方法
公开(公告)号：US06482702B1
公开(公告)日：2002-11-19
申请号：US10093486
申请日：2002-03-11
申请人： Chi-Hua Yu , Hsiao-Ying Yang
发明人： Chi-Hua Yu , Hsiao-Ying Yang
IPC分类号： H01L28236
CPC分类号： H01L27/11253 , H01L23/544 , H01L27/112 , H01L2223/54406 , H01L2223/54433 , H01L2223/54453 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： A method of forming and recognizing an identification mark for read-only memory. First, a first patterned resist layer is formed on a semiconductor substrate having an insulating region and a device region thereon by a code mask having code and identification mark patterns, and the identification mark pattern is over the insulating region. Next, ion implantation is performed to code in the device region. Thereafter, a second patterned resist layer is formed on the first patterned resist layer by a common mask to expose the entire identification mark pattern of the first patterned resist layer only. The identification mark pattern is then transferred to the insulating region by dry etching. Finally, the substrate having a clear identification mark is placed in an optical microscope for identification by an operator.
摘要翻译：形成和识别只读存储器的识别标记的方法。首先，通过具有代码和识别标记图案的代码掩模，在其上具有绝缘区域和器件区域的半导体衬底上形成第一图案化抗蚀剂层，并且识别标记图案在绝缘区域之上。接下来，执行离子注入以在器件区域中编码。此后，通过共用掩模在第一图案化抗蚀剂层上形成第二图案化抗蚀剂层，以仅暴露第一图案化抗蚀剂层的整个识别标记图案。然后通过干蚀刻将识别标记图案转移到绝缘区域。最后，将具有清晰识别标记的基板放置在光学显微镜中以供操作员识别。

8. 发明授权

US08080455B2 Method for fabricating semiconductor device with increased breakdown voltage 有权
标题翻译：制造具有增加的击穿电压的半导体器件的方法
公开(公告)号：US08080455B2
公开(公告)日：2011-12-20
申请号：US12177779
申请日：2008-07-22
申请人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
发明人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
IPC分类号： H01L21/8238
CPC分类号： H01L21/823481 , H01L21/823412 , H01L21/823493 , H01L21/823807 , H01L21/823878 , H01L21/823892
摘要： A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.
摘要翻译：提供一种制造半导体器件的方法。提供了包括P阱的衬底。在P井中定义了低压装置区域和高压装置区域。在基板上形成光致抗蚀剂层。提供了包括屏蔽区域的光掩模。屏蔽区域对应于高电压设备区域。通过使用光掩模的光刻工艺将光掩模的图案转移到基板上的光致抗蚀剂层。通过使用光致抗蚀剂层作为掩模，通过将P型离子选择性地掺杂到衬底中，在高电压器件区域的外部形成P型离子场。

9. 发明授权

US08063439B2 Semiconductor device and fabrication method thereof 有权
公开(公告)号：US08063439B2
公开(公告)日：2011-11-22
申请号：US12953347
申请日：2010-11-23
申请人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
发明人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
IPC分类号： H01L29/80
CPC分类号： H01L29/7836 , H01L29/0653
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.

10. 发明授权

US07863147B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07863147B2
公开(公告)日：2011-01-04
申请号：US12177766
申请日：2008-07-22
申请人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
发明人： Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang , Ya-Sheng Liu
IPC分类号： H01L21/00
CPC分类号： H01L29/7836 , H01L29/0653
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.
摘要翻译：提供半导体器件及其制造方法。半导体器件包括半导体衬底，其包括第一类型阱和第二类型阱以及它们之间的多个结区域，其中每个连接区域邻接第一和第二类型阱。栅电极，设置在半导体衬底上并覆盖至少两个接合区域。源极和漏极在与栅电极相对的半导体衬底中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式