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1. 发明授权

US07727787B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07727787B2
公开(公告)日：2010-06-01
申请号：US11976791
申请日：2007-10-29
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L21/304
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

2. 发明授权

US07456438B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US07456438B2
公开(公告)日：2008-11-25
申请号：US11581797
申请日：2006-10-17
申请人： Hyuk Min Lee , Hyoun Soo Shin , Chang Wan Kim , Yong Chun Kim
发明人： Hyuk Min Lee , Hyoun Soo Shin , Chang Wan Kim , Yong Chun Kim
IPC分类号： B23K31/00
CPC分类号： H01L33/44 , H01L24/17 , H01L33/62 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through a bump ball; and a grid-shape buffer film formed on the electrode surface exposed through the protective film.
摘要翻译：通过凸块球倒装芯片结合在副安装座的引线图案上的氮化物基半导体LED包括基板; 形成在所述基板上的发光结构; 形成在发光结构上的电极; 形成在其上形成有电极的所得结构上的保护膜，所述保护膜通过凸块球暴露出与所述副安装座的引线图案相连的部分的电极表面; 以及形成在通过保护膜暴露的电极表面上的栅格缓冲膜。

3. 发明申请

US20080286894A1 GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND PROCESS FOR PREPARING THE SAME 审中-公开
标题翻译：基于氮化镓的半导体发光二极管及其制备方法
公开(公告)号：US20080286894A1
公开(公告)日：2008-11-20
申请号：US12166113
申请日：2008-07-01
申请人： Seung Wan CHAE , Jun Sub KWAK , Hyoun Soo SHIN , Jun Ho SEO
发明人： Seung Wan CHAE , Jun Sub KWAK , Hyoun Soo SHIN , Jun Ho SEO
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L29/452 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2924/10155
摘要： A process for preparing a gallium nitride based semiconductor light emitting diode includes the step of: providing a substrate for growing a gallium nitride based semiconductor material; forming a lower clad layer on the substrate using a first conductive gallium nitride based semiconductor material; forming an active layer on the lower conductive clad layer using an undoped gallium nitride based semiconductor material; forming an upper clad layer on the active layer using a second conductive gallium nitride based semiconductor material; removing at least a portion of the upper clad layer and active layer at a predetermined region so as to expose the corresponding portion of the lower clad layer; and forming, on the upper surface of the upper clad layer, an ohmic contact forming layer made of In2O3 including at least one of Zn, Mg and Cu.
摘要翻译：一种制备氮化镓基半导体发光二极管的方法包括以下步骤：提供用于生长氮化镓基半导体材料的衬底; 使用第一导电氮化镓基半导体材料在所述衬底上形成下包层; 使用未掺杂的氮化镓基半导体材料在所述下导电覆层上形成有源层; 使用第二导电氮化镓基半导体材料在所述有源层上形成上覆层; 在预定区域去除上包层和有源层的至少一部分，以暴露下包层的相应部分; 以及在所述上包层的上表面上形成包括Zn，Mg和Cu中的至少一种的由In 2 O 3 3构成的欧姆接触形成层。

4. 外观设计

USD579425S1 Light-emitting diode 有权
公开(公告)号：USD579425S1
公开(公告)日：2008-10-28
申请号：US29290398
申请日：2007-11-30
申请人： Jae Joon Yoon , Sung Soo Park , Hyoun Soo Shin
设计人： Jae Joon Yoon , Sung Soo Park , Hyoun Soo Shin

5. 发明授权

US08124997B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08124997B2
公开(公告)日：2012-02-28
申请号：US12756528
申请日：2010-04-08
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L31/0232
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

6. 发明授权

US08525196B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08525196B2
公开(公告)日：2013-09-03
申请号：US13090757
申请日：2011-04-20
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

7. 发明授权

US07977134B2 Nitride-based semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US07977134B2
公开(公告)日：2011-07-12
申请号：US11543798
申请日：2006-10-06
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

8. 发明申请

US20100193823A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20100193823A1
公开(公告)日：2010-08-05
申请号：US12756528
申请日：2010-04-08
申请人： Tae Jun KIM , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun KIM , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L33/44
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

9. 发明申请

US20110193060A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE 有权
标题翻译：基于氮化物的半导体发光二极管
公开(公告)号：US20110193060A1
公开(公告)日：2011-08-11
申请号：US13090757
申请日：2011-04-20
申请人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

10. 发明申请

US20110084305A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE 有权
公开(公告)号：US20110084305A1
公开(公告)日：2011-04-14
申请号：US12967558
申请日：2010-12-14
申请人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/42 , H01L33/32
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

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