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1. 发明授权

US08525196B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08525196B2
公开(公告)日：2013-09-03
申请号：US13090757
申请日：2011-04-20
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

2. 发明授权

US07977134B2 Nitride-based semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US07977134B2
公开(公告)日：2011-07-12
申请号：US11543798
申请日：2006-10-06
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

3. 发明申请

US20110193060A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE 有权
标题翻译：基于氮化物的半导体发光二极管
公开(公告)号：US20110193060A1
公开(公告)日：2011-08-11
申请号：US13090757
申请日：2011-04-20
申请人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

4. 发明申请

US20110084305A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE 有权
公开(公告)号：US20110084305A1
公开(公告)日：2011-04-14
申请号：US12967558
申请日：2010-12-14
申请人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/42 , H01L33/32
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

5. 发明申请

US20080224168A1 Intride-based semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：基于Intride的半导体发光二极管及其制造方法
公开(公告)号：US20080224168A1
公开(公告)日：2008-09-18
申请号：US12153842
申请日：2008-05-27
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

6. 发明授权

US07994525B2 Nitride-based semiconductor light emitting diode 有权
公开(公告)号：US07994525B2
公开(公告)日：2011-08-09
申请号：US12967558
申请日：2010-12-14
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/06
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

7. 发明授权

US07893447B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US07893447B2
公开(公告)日：2011-02-22
申请号：US12153842
申请日：2008-05-27
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

8. 发明授权

US07456438B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US07456438B2
公开(公告)日：2008-11-25
申请号：US11581797
申请日：2006-10-17
申请人： Hyuk Min Lee , Hyoun Soo Shin , Chang Wan Kim , Yong Chun Kim
发明人： Hyuk Min Lee , Hyoun Soo Shin , Chang Wan Kim , Yong Chun Kim
IPC分类号： B23K31/00
CPC分类号： H01L33/44 , H01L24/17 , H01L33/62 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through a bump ball; and a grid-shape buffer film formed on the electrode surface exposed through the protective film.
摘要翻译：通过凸块球倒装芯片结合在副安装座的引线图案上的氮化物基半导体LED包括基板; 形成在所述基板上的发光结构; 形成在发光结构上的电极; 形成在其上形成有电极的所得结构上的保护膜，所述保护膜通过凸块球暴露出与所述副安装座的引线图案相连的部分的电极表面; 以及形成在通过保护膜暴露的电极表面上的栅格缓冲膜。

9. 发明授权

US07235818B2 Flip chip type nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：倒装芯片型氮化物半导体发光器件及其制造方法
公开(公告)号：US07235818B2
公开(公告)日：2007-06-26
申请号：US10861511
申请日：2004-06-07
申请人： Hyun Kyung Kim , Yong Chun Kim , Hyoun Soo Shin
发明人： Hyun Kyung Kim , Yong Chun Kim , Hyoun Soo Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.
摘要翻译：本文公开了一种倒装芯片型氮化物半导体发光器件，其包括用于生长氮化物半导体材料的衬底，形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体的至少一部分上的有源层氮化物半导体层，形成在有源层上的p型氮化物半导体层，形成在p型氮化物半导体层上并适于提供相对于p型氮化物半导体层的结合力的接合力提供层，反射电极层，形成在所述接合力提供层上，并且适于将在所述有源层中产生的光朝向所述衬底反射并扩散电流;以及覆盖层，形成在所述反射电极层上，并且适于在所述反射层之间提供接合力电极层和接合金属，并降低接触电阻。

10. 发明授权

US08124997B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08124997B2
公开(公告)日：2012-02-28
申请号：US12756528
申请日：2010-04-08
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L31/0232
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

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