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1. 发明授权

US07732283B2 Fabricating method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07732283B2
公开(公告)日：2010-06-08
申请号：US11876069
申请日：2007-10-22
申请人： Hyun Ju Lim
发明人： Hyun Ju Lim
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521
摘要： A method of fabricating a semiconductor device is provided. Spacers can be formed on adjacent gate structures and used as an ion implantation mask for forming source/drain regions. The spacers can include a nitride layer and an oxide layer. An etch stop layer can be provided between the gate structures, and the oxide layer can be removed from the spacers. A first oxide layer formed below the nitride layer can be protected from being etched away during removal of the oxide layer from the spacers by the etch stop layer. The etch stop layer and the first oxide layer can be removed, and an interlayer dielectric layer can be deposited.
摘要翻译：提供一种制造半导体器件的方法。间隔件可以形成在相邻的栅极结构上，并用作用于形成源极/漏极区域的离子注入掩模。间隔物可以包括氮化物层和氧化物层。可以在栅极结构之间提供蚀刻停止层，并且可以从间隔物去除氧化物层。在氮化物层下方形成的第一氧化物层可被保护，以便通过蚀刻停止层从间隔物去除氧化物层而被去除。可以去除蚀刻停止层和第一氧化物层，并且可以沉积层间电介质层。

2. 发明申请

US20080160691A1 Fabricating Method of Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20080160691A1
公开(公告)日：2008-07-03
申请号：US11876069
申请日：2007-10-22
申请人： Hyun Ju Lim
发明人： Hyun Ju Lim
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521
摘要： A method of fabricating a semiconductor device is provided. Spacers can be formed on adjacent gate structures and used as an ion implantation mask for forming source/drain regions. The spacers can include a nitride layer and an oxide layer. An etch stop layer can be provided between the gate structures, and the oxide layer can be removed from the spacers. A first oxide layer formed below the nitride layer can be protected from being etched away during removal of the oxide layer from the spacers by the etch stop layer. The etch stop layer and the first oxide layer can be removed, and an interlayer dielectric layer can be deposited.
摘要翻译：提供一种制造半导体器件的方法。间隔件可以形成在相邻的栅极结构上，并用作用于形成源极/漏极区域的离子注入掩模。间隔物可以包括氮化物层和氧化物层。可以在栅极结构之间提供蚀刻停止层，并且可以从间隔物去除氧化物层。在氮化物层下方形成的第一氧化物层可被保护，以便通过蚀刻停止层从间隔物去除氧化物层而被去除。可以去除蚀刻停止层和第一氧化物层，并且可以沉积层间电介质层。

3. 发明申请

US20080157177A1 Flash Device and the Manufacturing Method 有权
标题翻译：闪存设备和制造方法
公开(公告)号：US20080157177A1
公开(公告)日：2008-07-03
申请号：US11929900
申请日：2007-10-30
申请人： HYUN JU LIM
发明人： HYUN JU LIM
IPC分类号： H01L29/788 , H01L21/3205
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/513 , H01L29/66825 , H01L29/7881
摘要： A flash device and a manufacturing method thereof are provided. An ONO pattern can be formed on a floating gate, and a control gate can be formed on the ONO pattern. The ONO pattern can be formed with a portion that projects farther out than the sides of the floating gate and the control gate.
摘要翻译：提供闪光灯装置及其制造方法。可以在浮动栅极上形成ONO图案，并且可以在ONO图案上形成控制栅极。 ONO图案可以形成有比浮动栅极和控制栅极的侧面更远的部分。

4. 发明申请

US20050181233A1 Thieno[3,2-b]indole based polymer and organo-electroluminescent device using the same 有权
标题翻译：噻吩并[3,2-b]吲哚基聚合物和使用其的有机电致发光器件
公开(公告)号：US20050181233A1
公开(公告)日：2005-08-18
申请号：US11037099
申请日：2005-01-19
申请人： Byung-Hee Sohn , Hyun-Ju Lim
发明人： Byung-Hee Sohn , Hyun-Ju Lim
IPC分类号： H01L51/50 , C08G61/02 , C08G61/12 , C08G75/00 , C09K11/06 , H01L51/00 , H05B33/14
CPC分类号： C09K11/06 , C08G61/02 , C08G61/124 , C08G61/126 , C09K2211/1483 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/5012 , H05B33/14 , Y10S428/917
摘要： A thieno[3,2-b]indole-based polymer and an organo-electroluminescent device in which the polymer is introduced into an organic layer are provided. The thieno[3,2-b]indole-based polymer may be easily prepared and has blue light-emitting characteristic. The organo-electroluminescent device adopting the organic layer using the thieno[3,2-b]indole-based polymer has improved color purity, efficiency, and luminance characteristics.
摘要翻译：提供噻吩并[3,2-b]吲哚基聚合物和其中将聚合物引入有机层中的有机电致发光器件。噻吩并[3,2-b]吲哚基聚合物可以容易地制备并具有蓝色发光特性。采用噻吩并[3,2-b]吲哚类聚合物的有机层的有机电致发光元件具有提高的色纯度，效率和亮度特性。

5. 发明申请

US20050123803A1 Organic electroluminescence device 审中-公开
标题翻译：有机电致发光器件
公开(公告)号：US20050123803A1
公开(公告)日：2005-06-09
申请号：US11006655
申请日：2004-12-08
申请人： Sang-yeol Kim , Tae-yong Noh , In-sung Song , Soo-hyoung Lee , Hyun-ju Lim , Woon-jung Paek
发明人： Sang-yeol Kim , Tae-yong Noh , In-sung Song , Soo-hyoung Lee , Hyun-ju Lim , Woon-jung Paek
IPC分类号： H01L51/50 , H01L51/00 , H05B33/12 , H05B33/14 , H05B33/20 , H05B33/22 , H05B33/26
CPC分类号： H01L51/5048 , H01L51/0039 , H01L51/0043 , Y10T428/26
摘要： An organic electroluminescence device having a color improver added to a hole transport layer, so that it partially cuts off a long wavelength emission in an electron transport layer. The organic EL device has improved color purity while suppressing a decrease in emission efficiency.
摘要翻译：一种有机电致发光器件，其具有添加到空穴传输层的颜色改进剂，使得其部分地切断电子传输层中的长波长发射。有机EL器件在抑制发光效率降低的同时具有提高的色纯度。

6. 发明授权

US07919370B2 Flash device and the manufacturing method 有权
标题翻译：闪存器件和制造方法
公开(公告)号：US07919370B2
公开(公告)日：2011-04-05
申请号：US11929900
申请日：2007-10-30
申请人： Hyun Ju Lim
发明人： Hyun Ju Lim
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/513 , H01L29/66825 , H01L29/7881
摘要： A flash device and a manufacturing method thereof are provided. An ONO pattern can be formed on a floating gate, and a control gate can be formed on the ONO pattern. The ONO pattern can be formed with a portion that projects farther out than the sides of the floating gate and the control gate.
摘要翻译：提供闪光灯装置及其制造方法。可以在浮动栅极上形成ONO图案，并且可以在ONO图案上形成控制栅极。 ONO图案可以形成有比浮动栅极和控制栅极的侧面更远的部分。

7. 发明授权

US07883952B2 Method of manufacturing flash memory device 有权
标题翻译：制造闪存设备的方法
公开(公告)号：US07883952B2
公开(公告)日：2011-02-08
申请号：US12146486
申请日：2008-06-26
申请人： Hyun-Ju Lim
发明人： Hyun-Ju Lim
IPC分类号： H01L21/8238
CPC分类号： H01L27/11534 , H01L27/105 , H01L27/11526 , H01L29/66825 , H01L29/7883
摘要： A method of manufacturing a flash memory device that prevents generation of voids when forming an interlayer dielectric film. The method may include forming a gate on a semiconductor substrate, and then sequentially stacking a first dielectric film and a second dielectric film on the semiconductor substrate, and then forming a first spacer comprising a first dielectric film pattern and a second dielectric film pattern on sidewalls of the gate by performing a first etching process, and then forming source and drain areas in the semiconductor substrate, and then removing the second dielectric film, and then sequentially stacking a third dielectric film and a fourth dielectric film on the semiconductor substrate, and then forming a second spacer comprising the first dielectric pattern and a third dielectric pattern on the sidewalls of the gate by performing a second etching process, and then forming an interlayer dielectric film on the semiconductor substrate including the gate and the first spacer.
摘要翻译：一种在形成层间电介质膜时防止产生空隙的闪速存储器件的制造方法。该方法可以包括在半导体衬底上形成栅极，然后在半导体衬底上依次层叠第一电介质膜和第二电介质膜，然后在侧壁上形成包括第一电介质膜图案和第二电介质膜图案的第一间隔物通过进行第一蚀刻处理，然后在半导体衬底中形成源极和漏极区域，然后去除第二电介质膜，然后在半导体衬底上依次堆叠第三电介质膜和第四电介质膜，然后通过执行第二蚀刻工艺，在栅极的侧壁上形成包括第一电介质图案和第三电介质图案的第二间隔物，然后在包括栅极和第一间隔物的半导体衬底上形成层间电介质膜。

8. 发明授权

US07745304B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07745304B2
公开(公告)日：2010-06-29
申请号：US12140817
申请日：2008-06-17
申请人： Hyun-Ju Lim
发明人： Hyun-Ju Lim
IPC分类号： H01L21/762
CPC分类号： H01L21/7621 , H01L21/76232
摘要： A method of manufacturing a semiconductor device begins when a first dielectric pattern is formed on and/or over a substrate, and a first etching process is performed to form a trench in the substrate. An edge portion of the first trench is exposed. An oxidation process is performed on and/or over the substrate rounding the edge portion of the trench. A second dielectric is formed on and/or over the substrate including the trench, and a planarization process is performed on the second dielectric. A photoresist pattern is formed on and/or over the second dielectric corresponding to the trench, and a second etching process is performed to form a second dielectric pattern filling the trench. The photoresist pattern is removed. A second cleaning process is performed on the substrate including the trench to form a device isolation layer, which is formed by removing a portion of the second dielectric pattern. A portion of the second dielectric remains on the first dielectric pattern after the performing of the planarization process on the second dielectric.
摘要翻译：当在衬底上和/或衬底上形成第一电介质图案时，开始制造半导体器件的方法，并且执行第一蚀刻工艺以在衬底中形成沟槽。暴露第一沟槽的边缘部分。在围绕沟槽的边缘部分的基底上和/或上方进行氧化处理。在包括沟槽的衬底上和/或上方形成第二电介质，并且在第二电介质上进行平坦化处理。在对应于沟槽的第二电介质上和/或上方形成光致抗蚀剂图案，并且执行第二蚀刻工艺以形成填充沟槽的第二电介质图案。去除光致抗蚀剂图案。在包括沟槽的衬底上进行第二清洁处理，以形成通过去除第二电介质图案的一部分而形成的器件隔离层。在对第二电介质进行平坦化处理之后，第二电介质的一部分保留在第一电介质图案上。

9. 发明授权

US07662711B2 Method of forming dual damascene pattern 有权
标题翻译：形成双镶嵌图案的方法
公开(公告)号：US07662711B2
公开(公告)日：2010-02-16
申请号：US11752625
申请日：2007-05-23
申请人： Sang-Il Hwang , Hyun Ju Lim
发明人： Sang-Il Hwang , Hyun Ju Lim
IPC分类号： H01L21/00
CPC分类号： H01L23/53295 , H01L21/76808 , H01L21/76813 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a dual damascene pattern for a metal interconnection by a relatively simple process. Only a portion of an interlayer insulating film is initially etched when forming a via hole. When the interlayer insulating is etched to form a trench, the remaining portion of the via hole may be etched simultaneously.
摘要翻译：通过相对简单的工艺形成用于金属互连的双镶嵌图案的方法。当形成通孔时，最初仅蚀刻一部分层间绝缘膜。当蚀刻层间绝缘体以形成沟槽时，可以同时蚀刻通孔的剩余部分。

10. 发明授权

US07541736B2 Thieno[3,2-b]indole based polymer and organo-electroluminescent device using the same 有权
标题翻译：噻吩并[3,2-b]吲哚基聚合物和使用其的有机电致发光器件
公开(公告)号：US07541736B2
公开(公告)日：2009-06-02
申请号：US11037099
申请日：2005-01-19
申请人： Byung-Hee Sohn , Hyun-Ju Lim
发明人： Byung-Hee Sohn , Hyun-Ju Lim
IPC分类号： H01L51/54 , H05B33/14 , C09K11/06 , C08F234/04 , C08F34/04 , C08F32/06
CPC分类号： C09K11/06 , C08G61/02 , C08G61/124 , C08G61/126 , C09K2211/1483 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/5012 , H05B33/14 , Y10S428/917
摘要： A thieno[3,2-b]indole-based polymer and an organo-electroluminescent device in which the polymer is introduced into an organic layer are provided. The thieno[3,2-b]indole-based polymer may be easily prepared and has blue light-emitting characteristic. The organo-electroluminescent device adopting the organic layer using the thieno[3,2-b]indole-based polymer has improved color purity, efficiency, and luminance characteristics.
摘要翻译：提供噻吩并[3,2-b]吲哚基聚合物和其中将聚合物引入有机层中的有机电致发光器件。噻吩并[3,2-b]吲哚基聚合物可以容易地制备并具有蓝色发光特性。采用噻吩并[3,2-b]吲哚类聚合物的有机层的有机电致发光元件具有提高的色纯度，效率和亮度特性。

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