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1. 发明授权

US10923325B2 Method of controlling an implanter operating in plasma immersion 有权
公开(公告)号：US10923325B2
公开(公告)日：2021-02-16
申请号：US16060700
申请日：2016-12-05
申请人： ION BEAM SERVICES
发明人： Frank Gilbert Torregrosa , Laurent Roux
IPC分类号： H01J37/32 , C23C14/48 , H01J37/317 , H01J37/02 , H01L21/223
摘要： A method of controlling an implanter operating in plasma immersion, the method including the steps of: an implantation stage (1) during which the plasma AP is ignited and the substrate is negatively biased S; a neutralization stage (2) during which the plasma AP is ignited and the substrate has a positive or zero bias S applied thereto; a suppression stage (3) during which the plasma AP is extinguished; and an expulsion stage (4) for expelling negatively charged particles from the substrate and during which the plasma AP is extinguished. The method is remarkable in that the duration of the expulsion stage is longer than 5 μs.
The invention also provides a power supply for biasing an implanter.

2. 发明申请

US20190164761A1 METHOD FOR DOPING SILICON SHEETS 审中-公开
公开(公告)号：US20190164761A1
公开(公告)日：2019-05-30
申请号：US16249130
申请日：2019-01-16
申请人： ION BEAM SERVICES
发明人： Bernard BECHEVET , Johann JOURDAN
IPC分类号： H01L21/223 , H01L31/068 , H01L31/18
摘要： A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method including the steps of: performing a first doping operation of at least a first portion (11) of a surface (10) of the silicon wafer; forming an oxide layer (40) on the partially doped surface (10); and performing a second doping operation through the oxide layer (40), so as to dope another portion (12) of the surface (10) of the silicon wafer.

3. 发明申请

US20170051401A1 METHOD FOR INSTALLING A GAS DIFFUSION DEVICE 审中-公开
标题翻译：用于安装气体扩散装置的方法
公开(公告)号：US20170051401A1
公开(公告)日：2017-02-23
申请号：US15307626
申请日：2015-04-29
申请人： ION BEAM SERVICES
发明人： Frank TORREGROSA , Laurent ROUX
IPC分类号： C23C16/44 , H01J37/32 , C23C16/455
CPC分类号： C23C16/4404 , C23C16/4405 , C23C16/45565 , H01J37/3244
摘要： The present invention relates to a method of implanting impurities in a part. The method is remarkable in that the part is a gas diffusion device of the showerhead type in the form of a hollow body 1 having a gas admission orifice 2 and an ejection surface 3 provided with a plurality of holes, and the implanting takes place in the ejection surface.
摘要翻译：本发明涉及在部件中植入杂质的方法。该方法是显着的，其部分是具有气体入口孔2和设置有多个孔的喷射表面3的中空体1形式的喷头类型的气体扩散装置，并且植入在喷射面。

4. 发明授权

US09552962B2 Method of controlling an ion implanter in plasma immersion mode 有权
标题翻译：在等离子体浸入模式下控制离子注入机的方法
公开(公告)号：US09552962B2
公开(公告)日：2017-01-24
申请号：US14349501
申请日：2012-10-04
申请人： ION BEAM SERVICES
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： H01J37/32 , H01J37/317 , C23C14/48 , H01L21/223
CPC分类号： H01J37/3171 , C23C14/48 , H01J37/32009 , H01J37/32146 , H01J37/32412 , H01J37/32422 , H01J37/32706 , H01L21/2236
摘要： The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising: an electricity generator; a first switch SW1 connected between the generator and the output terminal of the substrate power supply; and a second switch SW2 connected between the output terminal and a neutralization terminal; the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.
摘要翻译：本发明涉及一种控制具有等离子体电源AP和基板电源的离子注入机的方法，所述基板电源包括：发电机; 连接在发电机和基板电源的输出端子之间的第一开关SW1; 以及连接在输出端子和中和端子之间的第二开关SW2; 该方法包括注入阶段A-D和中和阶段E-H。该方法还包括与植入阶段和中和阶段重叠的松弛阶段C-F，在此期间等离子体电源的松弛阶段失活。此外，中和阶段包括用于关闭第二开关的初步步骤E-F，该初步步骤之后是用于激活等离子体电源AP的取消步骤F-G。

5. 发明申请

US20160225921A1 METHOD FOR PRODUCING A CONTACT STRUCTURE OF A PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL 审中-公开
标题翻译：用于生产光伏电池和光电池的接触结构的方法
公开(公告)号：US20160225921A1
公开(公告)日：2016-08-04
申请号：US15025059
申请日：2014-09-26
申请人： ION BEAM SERVICES
发明人： Tim BOESCKE
IPC分类号： H01L31/02 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/02008 , H01L31/022433 , H01L31/022441 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method (800) for producing a contact structure (104) of a photovoltaic cell (100), wherein the method (800) comprises a step (802) of providing, a step (804) of doping, and a step (806) of contacting. In step (802) of providing, a wafer (102) for the photovoltaic cell (100) is provided. In step (804) of doping, a surface portion of at least one side of the wafer (102) is doped with a doping material in order to obtain a doped region (106), wherein the doped region (106) is formed as doped tracks (106) and the tracks (106) are separated by intermediate spaces (110). In step (806) of contacting, the doped region (106) is contacted in order to produce the contact structure (104), wherein a conductor material (108) is applied to the tracks (106) in such a way that the tracks (106) protrude beyond the conductor material (108) on both sides.
摘要翻译：本发明涉及一种用于制造光伏电池（100）的接触结构（104）的方法（800），其中方法（800）包括提供掺杂步骤（804）的步骤（802）和步骤（806）。在提供的步骤（802）中，提供了用于光伏电池（100）的晶片（102）。在掺杂的步骤（804）中，晶片（102）的至少一侧的表面部分被掺杂掺杂材料以便获得掺杂区域（106），其中掺杂区域（106）形成为掺杂轨道（106）和轨道（106）由中间空间（110）分开。在接触的步骤（806）中，接触掺杂区域（106）以产生接触结构（104），其中导体材料（108）以这样的方式施加到轨道（106），使得轨道 106）突出超过导体材料（108）两侧。

6. 发明申请

US20140326176A1 A SUPPORT INCLUDING AN ELECTROSTATIC SUBSTRATE CARRIER 审中-公开
标题翻译：支持包括静电基板载体
公开(公告)号：US20140326176A1
公开(公告)日：2014-11-06
申请号：US14367015
申请日：2012-12-19
申请人： ION BEAM SERVICES
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： C23C14/50 , C23C14/48 , H01L21/683
CPC分类号： C23C14/50 , C23C14/48 , H01L21/67069 , H01L21/67248 , H01L21/6831 , H01L21/6833
摘要： The present invention provides a support that comprises: an electrically conductive biased table; an insulating electrostatic substrate carrier 20 in the form of a cylinder having a shoulder 21, the bottom face of the substrate carrier 20 facing the biased table and its top face 22 presenting a bearing plane designed to receive a substrate; and an electrically conductive clamping collar for clamping the shoulder 21 against the biased table. The support also has at least one electrically conductive element 201-202-203 for connecting the bearing plane to the shoulder 211.
摘要翻译：本发明提供了一种支撑件，其包括：导电偏置台; 具有肩部21的圆柱形形式的绝缘静电衬底载体20，衬底载体20的底面朝向偏置工作台，其顶面22呈现设计成接收衬底的支承面; 以及用于将肩部21抵靠偏置工位夹紧的导电夹环。支撑件还具有用于将支承平面连接到肩部211的至少一个导电元件201-202-203。

7. 发明申请

US20180358207A1 A METHOD OF CONTROLLING AN IMPLANTER OPERATING IN PLASMA IMMERSION 审中-公开
公开(公告)号：US20180358207A1
公开(公告)日：2018-12-13
申请号：US16060700
申请日：2016-12-05
申请人： ION BEAM SERVICES
发明人： Frank TORREGROSA , Laurent ROUX
IPC分类号： H01J37/32 , H01J37/02 , C23C14/48
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/026 , H01J37/32174 , H01J37/32357 , H01J37/32422 , H01J37/32706 , H01J37/32871 , H01J2237/0044 , H01L21/2236
摘要： A method of controlling an implanter operating in plasma immersion, the method including the steps of: an implantation stage (1) during which the plasma AP is ignited and the substrate is negatively biased S; a neutralization stage (2) during which the plasma AP is ignited and the substrate has a positive or zero bias S applied thereto; a suppression stage (3) during which the plasma AP is extinguished; and an expulsion stage (4) for expelling negatively charged particles from the substrate and during which the plasma AP is extinguished. The method is remarkable in that the duration of the expulsion stage is longer than 5 μs.The invention also provides a power supply for biasing an implanter.

8. 发明申请

US20180031319A1 A METHOD OF STABILIZING A SUBSTRATE AND A MACHINE FOR PERFORMING THE METHOD 审中-公开
公开(公告)号：US20180031319A1
公开(公告)日：2018-02-01
申请号：US15552094
申请日：2016-02-17
申请人： ION BEAM SERVICES
发明人： Frank TORREGROSA , Laurent ROUX , Yohann SPIEGEL
IPC分类号： F26B25/06
CPC分类号： F26B25/06 , H01L21/2236 , H01L21/67207
摘要： A method of treating a substrate 23 includes a doping step followed immediately by a stabilization step. The method is remarkable in that the stabilization step involves immersing the substrate in a gas forming part of the set consisting of: oxygen; water vapor; wet air; hydrogen peroxide vapor; ozone; and ammonia. Also disclosed is a machine for treating a substrate in accordance with the above method and including a gas introduction orifice.

9. 发明申请

US20160071695A1 AN ION IMPLANTATION MACHINE PRESENTING INCREASED PRODUCTIVITY 有权
标题翻译：离子植入机提高生产率
公开(公告)号：US20160071695A1
公开(公告)日：2016-03-10
申请号：US14783296
申请日：2014-04-09
申请人： ION BEAM SERVICES
发明人： Frank TORREGROSA , Laurent ROUX
IPC分类号： H01J37/317 , H01J37/08 , H01J37/20
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/50 , H01J37/08 , H01J37/20 , H01J37/32412 , H01J37/32541 , H01J37/32568 , H01J37/32715
摘要： The present invention relates to an ion implantation machine 100 that comprises: an enclosure 101 that is connected to a pump device 102; a plasma source 115-121-122; a bias power supply 113; a gas inlet 117 leading into the enclosure; and a substrate-carrier 104 connected to the negative pole of the bias power supply and arranged inside the enclosure. The machine is remarkable in that: the substrate-carrier 104 consists in at least two parallel plates 105-106; a reference electrode consists in at least one strip 110, this reference electrode being connected to the positive pole of the bias power supply; and the strip is interposed between the two plates.
摘要翻译：本发明涉及离子注入机100，其包括：连接到泵装置102的外壳101; 等离子体源115-121-122; 偏置电源113; 通向外壳的气体入口117; 以及连接到偏置电源的负极并且布置在外壳内的衬底载体104。该机器非常显着，其中：衬底载体104包括至少两个平行板105-106; 参考电极由至少一个条110组成，该参考电极连接到偏置电源的正极; 并且条带插入在两个板之间。

10. 发明申请

US20140327358A1 METHOD OF CONTROLLING AN ION IMPLANTER IN PLASMA IMMERSION MODE 有权
标题翻译：在离子注入模式下控制离子植入物的方法
公开(公告)号：US20140327358A1
公开(公告)日：2014-11-06
申请号：US14349501
申请日：2012-10-04
申请人： ION BEAM SERVICES
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , C23C14/48 , H01J37/32009 , H01J37/32146 , H01J37/32412 , H01J37/32422 , H01J37/32706 , H01L21/2236
摘要： The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising: an electricity generator; a first switch SW1 connected between the generator and the output terminal of the substrate power supply; and a second switch SW2 connected between the output terminal and a neutralization terminal; the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.
摘要翻译：本发明涉及一种控制具有等离子体电源AP和基板电源的离子注入机的方法，所述基板电源包括：发电机; 连接在发电机和基板电源的输出端子之间的第一开关SW1; 以及连接在输出端子和中和端子之间的第二开关SW2; 该方法包括注入阶段A-D和中和阶段E-H。该方法还包括与植入阶段和中和阶段重叠的松弛阶段C-F，在此期间等离子体电源的松弛阶段失活。此外，中和阶段包括用于关闭第二开关的初步步骤E-F，该初步步骤之后是用于激活等离子体电源AP的取消步骤F-G。

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