会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明申请
    • METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE
    • 制造薄膜晶体管和薄膜晶体管基板的方法
    • US20100140706A1
    • 2010-06-10
    • US12507725
    • 2009-07-22
    • Jae Bon KOOIn-Kyu YouSeongdeok AhnKyoung Ik Cho
    • Jae Bon KOOIn-Kyu YouSeongdeok AhnKyoung Ik Cho
    • H01L29/786H01L21/336
    • H01L29/78603H01L27/1266H01L29/66757H01L29/78618
    • Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.
    • 提供了一种可以改善自对准的薄膜晶体管的制造方法。 在该方法中,在第一衬底上的牺牲层上形成包括第一掺杂区域,第二掺杂区域和沟道区域的半导体层。 接下来,半导体层与第一衬底分离,然后耦合在第二衬底上。 接下来,在第二基板和半导体层上形成电介质层,在电介质层上形成第一光致抗蚀剂层。 此后,通过使用第一掺杂区域和第二掺杂区域作为掩模,将第一光致抗蚀剂层从第二基板的后表面曝光,以形成第一掩模图案。 接下来,通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极,分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极,以完成 薄膜晶体管。