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1. 发明授权

US09041063B2 High electron mobility transistors and methods of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09041063B2
公开(公告)日：2015-05-26
申请号：US13064287
申请日：2011-03-16
申请人： In-jun Hwang
发明人： In-jun Hwang
IPC分类号： H01L29/66 , H01L29/778 , H01L29/10 , H01L29/423 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a source electrode, a gate electrode, a drain electrode, a channel formation layer including at least a 2-dimensional electron gas (2DEG) channel, a channel supplying layer for forming the 2DEG channel in the channel formation layer, a portion of the channel supplying layer including a first oxygen treated region. The channel supplying layer may include a second oxygen treated region that extends from the first oxygen treated region towards the drain electrode, and the depth and concentration of oxygen of the second oxygen treated region may be less than those of the first oxygen treated region.
摘要翻译：高电子迁移率晶体管（HEMT）及其制造方法。 HEMT可以包括源电极，栅电极，漏电极，至少包括二维电子气体（2DEG）沟道的沟道形成层，用于在沟道形成层中形成2DEG沟道的沟道供给层，所述通道供给层的一部分包括第一氧处理区域。通道供给层可以包括从第一氧处理区域朝向漏电极延伸的第二氧处理区域，并且第二氧处理区域的氧深度和浓度可以小于第一氧处理区域的深度和浓度。

2. 发明授权

US08921220B2 Selective low-temperature ohmic contact formation method for group III-nitride heterojunction structured device 有权
标题翻译：用于III族氮化物异质结结构器件的选择性低温欧姆接触形成方法
公开(公告)号：US08921220B2
公开(公告)日：2014-12-30
申请号：US13599980
申请日：2012-08-30
申请人： Xianyu Wenxu , Jeong-Yub Lee , Chang -youl Moon , Yong-Young Park , Woo Young Yang , Jae-Joon Oh , In-Jun Hwang
发明人： Xianyu Wenxu , Jeong-Yub Lee , Chang -youl Moon , Yong-Young Park , Woo Young Yang , Jae-Joon Oh , In-Jun Hwang
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/268 , H01L21/28575 , H01L21/3245 , H01L29/2003 , H01L29/452 , H01L29/517 , H01L29/66462
摘要： A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.
摘要翻译：用于形成用于III族氮化物异质结结构器件的选择性欧姆接触的方法可包括在包括至少一个III族氮化物异质结层并且具有限定的欧姆接触区域的外延衬底上形成导电层和覆盖层，覆盖层形成在导电层之间或在欧姆接触区域和非欧姆接触区域之一的导电层和III族氮化物异质结层之间，并且施加激光退火工艺和感应退火工艺中的至少一个在小于或等于约750℃的温度下在衬底上完成欧姆接触区域中的选择性欧姆接触。

3. 发明授权

US08847692B2 Oscillators and method of operating the same 有权
标题翻译：振荡器和操作方法相同
公开(公告)号：US08847692B2
公开(公告)日：2014-09-30
申请号：US13174932
申请日：2011-07-01
申请人： Ung-hwan Pi , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Kwang-seok Kim , Sung-chul Lee
发明人： Ung-hwan Pi , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Kwang-seok Kim , Sung-chul Lee
IPC分类号： H03B15/00
CPC分类号： H03B15/006
摘要： Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.
摘要翻译：提供了振荡器及其操作方法，所述振荡器包括磁性层和构造成固定磁性层的磁化方向的磁化固定元件。振荡器通过使用磁性层的磁矩的进动来产生信号。

4. 发明授权

US08835985B2 Power electronic device and method of manufacturing the same 有权
标题翻译：电力电子装置及其制造方法
公开(公告)号：US08835985B2
公开(公告)日：2014-09-16
申请号：US13208671
申请日：2011-08-12
申请人： In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong
发明人： In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong
IPC分类号： H01L29/778 , H01L29/40 , H01L29/66 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/408 , H01L29/66462
摘要： According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain and gate are separate from one another. The power electronic device further includes a 2-dimensional electron gas (2DEG) region at an interface between the first semiconductor layer and the second semiconductor layer, a first insulating layer on the gate and a second insulating layer adjacent to the first insulating layer. The first insulating layer has a first dielectric constant and the second insulating layer has a second dielectric constant less than the first dielectric constant.
摘要翻译：根据示例性实施例，功率电子器件包括第一半导体层，第一半导体层的第一表面上的第二半导体层以及第二半导体层上的源极，漏极和栅极。源极，漏极和栅极彼此分开。电力电子设备还包括在第一半导体层和第二半导体层之间的界面处的二维电子气体（2DEG）区域，栅极上的第一绝缘层和与第一绝缘层相邻的第二绝缘层。第一绝缘层具有第一介电常数，第二绝缘层具有小于第一介电常数的第二介电常数。

5. 发明申请

US20140241703A1 TRANSMISSION SCHEME AND IMAGE QUALITY ADAPTIVE SECURITY CAMERA AND DVR SYSTEM 有权
标题翻译：传输方案和图像质量自适应安全摄像机和DVR系统
公开(公告)号：US20140241703A1
公开(公告)日：2014-08-28
申请号：US14348554
申请日：2012-08-09
申请人： In-Jun Hwang
发明人： In-Jun Hwang
IPC分类号： H04N5/77 , H04N9/82 , H04N9/79 , H04N7/18 , H04N5/76
CPC分类号： H04N5/772 , H04N5/76 , H04N7/088 , H04N7/18 , H04N9/7921 , H04N9/8205
摘要： The present invention relates to an image quality adaptive video security system, a security camera generating an original video signal from a camera sensor, inserting an image quality discrimination signal including image quality information for video to the original video signal and generating a video signal. A DVR system determines whether a video signal from a security camera is transmitted in an analog transmission scheme or in a digital transmission scheme. In the case of the analog transmission scheme, the DVR system decodes the analog video signal to a first digital component video signal and detects image quality information. In a case of the digital transmission scheme, the DVR system converts the digital video signal to a digital second component video signal and detects image quality information. A video processing unit scales, compresses, stores or displays the first or the second component video signal with reference to the image quality information of the detected analog or digital video signal.
摘要翻译：本发明涉及一种图像质量自适应视频安全系统，一种从相机传感器生成原始视频信号的安全摄像机，将包含视频图像质量信息的图像质量鉴别信号插入原始视频信号并产生视频信号。 DVR系统确定来自安全摄像机的视频信号是否以模拟传输方案或数字传输方案传输。在模拟传输方案的情况下，DVR系统将模拟视频信号解码为第一数字分量视频信号并检测图像质量信息。在数字传输方案的情况下，DVR系统将数字视频信号转换为数字第二分量视频信号并检测图像质量信息。视频处理单元参考检测到的模拟或数字视频信号的图像质量信息来缩放，压缩，存储或显示第一或第二分量视频信号。

6. 发明授权

US08569769B2 E-mode high electron mobility transistors and methods of manufacturing the same 有权
标题翻译： E型高电子迁移率晶体管及其制造方法
公开(公告)号：US08569769B2
公开(公告)日：2013-10-29
申请号：US13179859
申请日：2011-07-11
申请人： In-jun Hwang , Ki-ha Hong , Jong-seob Kim , Jae-Kwang Shin , Jae-joon Oh , Jong-bong Ha , Hyuk-soon Choi
发明人： In-jun Hwang , Ki-ha Hong , Jong-seob Kim , Jae-Kwang Shin , Jae-joon Oh , Jong-bong Ha , Hyuk-soon Choi
IPC分类号： H01L29/15
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.
摘要翻译：增强模式（E模式）高电子迁移率晶体管（HEMT）包括具有二维电子气体（2DEG）的沟道层，在沟道层中引起2DEG的势垒层，势垒层上的源极和漏极，源极和漏极之间的阻挡层上的耗尽层，以及耗尽层上的栅电极。阻挡层凹陷在栅电极下方，耗尽层覆盖凹槽的表面并且延伸到围绕凹槽的阻挡层上。

7. 发明授权

US08508194B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08508194B2
公开(公告)日：2013-08-13
申请号：US12923857
申请日：2010-10-12
申请人： Ho-jung Kim , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
发明人： Ho-jung Kim , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
IPC分类号： G05F1/10
CPC分类号： H03K17/6871 , H02M1/08 , H02M3/158 , H02M3/337 , H02M2001/0074 , H03K2217/0081
摘要： Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.
摘要翻译：提供一种半导体器件，其可以包括具有负阈值电压的开关器件，以及电源端子和接地端子之间的驱动单元，并且提供用于驱动开关器件的驱动电压。开关器件可以连接到具有大于从接地端子提供的接地电压的虚拟接地电压的虚拟接地节点，并且当驱动电压和虚拟接地电压之间的差大于负值时，可以导通阈值电压。

8. 发明申请

US20130032816A1 HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20130032816A1
公开(公告)日：2013-02-07
申请号：US13431397
申请日：2012-03-27
申请人： In-jun Hwang , Hyuk-soon Choi , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , Ki-ha Hong , Jai-kwang Shin
发明人： In-jun Hwang , Hyuk-soon Choi , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , Ki-ha Hong , Jai-kwang Shin
IPC分类号： H01L29/20 , H01L21/335 , H01L29/778
CPC分类号： H01L29/66462 , H01L29/1066 , H01L29/2003 , H01L29/7787
摘要： High electron mobility transistors (HEMTs) including a substrate and a HEMT stack on the substrate, the HEMT stack including a compound semiconductor layer that includes a 2-dimensional electron gas (2DEG), an upper compound semiconductor layer that has a polarization index higher than a polarization index of the compound semiconductor layer, and a source electrode, a drain electrode, and a gate that are disposed on the upper compound semiconductor layer. The substrate may be a nitride substrate that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of a silicon substrate. The substrate may include an insulating layer that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of the silicon substrate, a metal layer that is deposited on the insulating layer, and a plate that is attached to the metal layer.

9. 发明申请

US20120088341A1 Methods Of Manufacturing High Electron Mobility Transistors 审中-公开
标题翻译：制造高电子迁移率晶体管的方法
公开(公告)号：US20120088341A1
公开(公告)日：2012-04-12
申请号：US13178902
申请日：2011-07-08
申请人： Hyuk-soon Choi , Jung-hee Lee , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , In-jun Hwang , Ki-ha Hong , Ki-sik Im , Ki-won Kim , Dong-seok Kim
发明人： Hyuk-soon Choi , Jung-hee Lee , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , In-jun Hwang , Ki-ha Hong , Ki-sik Im , Ki-won Kim , Dong-seok Kim
IPC分类号： H01L21/338
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/76237 , H01L29/0847 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/4236 , H01L29/7787
摘要： The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
摘要翻译：所述方法可以包括在衬底上形成第一材料层，增加第一材料层的电阻，以及在第一材料层上形成彼此间隔开的源图案和漏极图案，带隙为源极和漏极图案大于第一材料层的带隙。

10. 发明授权

US07751223B2 Magnetic memory devices using magnetic domain motion 有权
标题翻译：使用磁畴运动的磁存储器件
公开(公告)号：US07751223B2
公开(公告)日：2010-07-06
申请号：US11707002
申请日：2007-02-16
申请人： Tae-wan Kim , Kee-won Kim , Young-jin Cho , In-jun Hwang
发明人： Tae-wan Kim , Kee-won Kim , Young-jin Cho , In-jun Hwang
IPC分类号： G11C19/00
CPC分类号： G11C11/16 , G11C19/0808 , G11C19/0841 , G11C2213/77
摘要： A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.
摘要翻译：磁存储器件包括记录层，参考层，第一输入部分和第二输入部分。记录层具有垂直磁化方向和多个磁畴，并且参考层对应于记录层的一部分并具有钉扎磁化方向。记录层具有数据存储单元，其中形成各自包括磁畴的多个数据位区域。磁畴对应于参考层的有效尺寸。第一输入部分输入写入信号和读取信号中的至少一个。第二输入部分电连接到记录层并输入磁畴运动信号，以便将存储在记录层的数据位区域中的数据移动到相邻的数据位区域。

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