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    • 1. 发明授权
    • Organic thin film transistor and method for manufacturing the same
    • 有机薄膜晶体管及其制造方法
    • US08735870B2
    • 2014-05-27
    • US11644243
    • 2006-12-22
    • Chang Wook HanJae Yoon Lee
    • Chang Wook HanJae Yoon Lee
    • H01L29/08
    • H01L51/0512H01L51/0533H01L51/0545H01L51/105
    • An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.
    • 公开了一种有机薄膜晶体管及其制造方法,其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极,形成在栅电极上的栅极绝缘层,与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极,形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层,在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。
    • 4. 发明申请
    • Organic electro luminescence device and fabrication method thereof
    • 有机电致发光器件及其制造方法
    • US20100167435A1
    • 2010-07-01
    • US12654764
    • 2009-12-31
    • Sung Joon BaeJae Yoon Lee
    • Sung Joon BaeJae Yoon Lee
    • H01L51/56
    • H01L27/3246H01L27/3248H01L51/5203H01L2251/5315
    • Provided is a method of fabricating an organic electro luminescence device, the method comprising: forming a thin film transistor on a substrate; forming a passivation layer and a first electrode on the substrate including the thin film transistor; forming a contact hole exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer; forming a buffer layer and a barrier rib on a predetermined portion of an upper surface of the first electrode; forming an organic emission layer within a region defined by the buffer layer; and forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole.
    • 提供一种制造有机电致发光器件的方法,该方法包括:在衬底上形成薄膜晶体管; 在包括薄膜晶体管的衬底上形成钝化层和第一电极; 形成在所述第一电极和所述钝化层的预定部分处暴露所述薄膜晶体管的漏电极的上表面的接触孔; 在所述第一电极的上表面的预定部分上形成缓冲层和阻挡肋; 在由所述缓冲层限定的区域内形成有机发射层; 以及在所述有机发射层上形成第二电极,使得所述第二电极通过所述接触孔与所述漏电极电连接。
    • 9. 发明申请
    • Organic electroluminescence display device and method of fabricating the same
    • 有机电致发光显示装置及其制造方法
    • US20080001524A1
    • 2008-01-03
    • US11821147
    • 2007-06-22
    • Jae Yoon LeeJoon Suk Lee
    • Jae Yoon LeeJoon Suk Lee
    • H01J1/62H01J9/02
    • H01L27/3251H01L27/3246H01L51/5212H01L51/56
    • The display device includes a first substrate, a second substrate, a spacer and a connection electrode. The first substrate includes an organic electroluminescence diode device, and the second substrate faces the first substrate and includes a thin film transistor. The connection electrode is configured to electrically connect the thin film transistor and the organic electroluminescence diode device. The display device further includes a first buffer pattern configured to separate two adjacent pixel regions and a second buffer pattern overlying the first buffer pattern and having a predetermined shape. The first buffer pattern is etchable to produce a cavity between the two adjacent pixel regions. The cavity can be enlarged to the extent that the shape of the second buffer pattern is maintained.
    • 显示装置包括第一基板,第二基板,间隔件和连接电极。 第一衬底包括有机电致发光二极管器件,并且第二衬底面对第一衬底并且包括薄膜晶体管。 连接电极被配置为电连接薄膜晶体管和有机电致发光二极管器件。 显示装置还包括配置为分离两个相邻像素区域的第一缓冲图案和覆盖第一缓冲图案并具有预定形状的第二缓冲图案。 第一缓冲图案是可蚀刻的,以在两个相邻像素区域之间产生空腔。 可以将空腔扩大到保持第二缓冲图案的形状的程度。
    • 10. 发明申请
    • Organic thin film transistor and method for manufacturing the same
    • 有机薄膜晶体管及其制造方法
    • US20070152210A1
    • 2007-07-05
    • US11644243
    • 2006-12-22
    • Chang Wook HanJae Yoon Lee
    • Chang Wook HanJae Yoon Lee
    • H01L29/08
    • H01L51/0512H01L51/0533H01L51/0545H01L51/105
    • An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.
    • 公开了一种有机薄膜晶体管及其制造方法,其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极,形成在栅电极上的栅极绝缘层,与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极,形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层,在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。