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    • 8. 发明申请
    • Organic electroluminescence display device and method of fabricating the same
    • 有机电致发光显示装置及其制造方法
    • US20080001524A1
    • 2008-01-03
    • US11821147
    • 2007-06-22
    • Jae Yoon LeeJoon Suk Lee
    • Jae Yoon LeeJoon Suk Lee
    • H01J1/62H01J9/02
    • H01L27/3251H01L27/3246H01L51/5212H01L51/56
    • The display device includes a first substrate, a second substrate, a spacer and a connection electrode. The first substrate includes an organic electroluminescence diode device, and the second substrate faces the first substrate and includes a thin film transistor. The connection electrode is configured to electrically connect the thin film transistor and the organic electroluminescence diode device. The display device further includes a first buffer pattern configured to separate two adjacent pixel regions and a second buffer pattern overlying the first buffer pattern and having a predetermined shape. The first buffer pattern is etchable to produce a cavity between the two adjacent pixel regions. The cavity can be enlarged to the extent that the shape of the second buffer pattern is maintained.
    • 显示装置包括第一基板,第二基板,间隔件和连接电极。 第一衬底包括有机电致发光二极管器件,并且第二衬底面对第一衬底并且包括薄膜晶体管。 连接电极被配置为电连接薄膜晶体管和有机电致发光二极管器件。 显示装置还包括配置为分离两个相邻像素区域的第一缓冲图案和覆盖第一缓冲图案并具有预定形状的第二缓冲图案。 第一缓冲图案是可蚀刻的,以在两个相邻像素区域之间产生空腔。 可以将空腔扩大到保持第二缓冲图案的形状的程度。
    • 9. 发明授权
    • Method of manufacturing three dimensional semiconductor memory device
    • 制造三维半导体存储器件的方法
    • US09064736B2
    • 2015-06-23
    • US14248003
    • 2014-04-08
    • Joon-Suk LeeWoong LeeHun-Hyeong LimKi-Hyun Hwang
    • Joon-Suk LeeWoong LeeHun-Hyeong LimKi-Hyun Hwang
    • H01L21/311H01L27/115
    • H01L27/11578H01L27/1157H01L27/11582
    • A method of manufacturing a three-dimensional semiconductor memory device is provided. The method includes alternately stacking a first insulation film, a first sacrificial film, alternating second insulation films and second sacrificial films, a third sacrificial film and a third insulation film on a substrate. A channel hole is formed to expose a portion of the substrate while passing through the first insulation film, the first sacrificial film, the second insulation films, the second sacrificial films, the third sacrificial film and the third insulation film. The method further includes forming a semiconductor pattern on the portion of the substrate exposed in the channel hole by epitaxial growth. Forming the semiconductor pattern includes forming a lower epitaxial film, doping an impurity into the lower epitaxial film, and forming an upper epitaxial film on the lower epitaxial film. Forming the lower epitaxial film, doping the impurity into the lower epitaxial film and forming the upper epitaxial film are all performed in-situ, and the semiconductor pattern includes a doped region and an undoped region.
    • 提供一种制造三维半导体存储器件的方法。 该方法包括在基板上交替堆叠第一绝缘膜,第一牺牲膜,交替的第二绝缘膜和第二牺牲膜,第三牺牲膜和第三绝缘膜。 形成通道孔,以在穿过第一绝缘膜,第一牺牲膜,第二绝缘膜,第二牺牲膜,第三牺牲膜和第三绝缘膜的同时暴露衬底的一部分。 该方法还包括通过外延生长在暴露在通道孔中的衬底的部分上形成半导体图案。 形成半导体图案包括形成下部外延膜,将杂质掺杂到下部外延膜中,以及在下部外延膜上形成上部外延膜。 形成下部外延膜,将杂质掺杂到下部外延膜中并形成上部外延膜全部原位进行,并且半导体图案包括掺杂区域和未掺杂区域。
    • 10. 发明授权
    • Organic electroluminescence display device and method of fabricating the same
    • 有机电致发光显示装置及其制造方法
    • US08044578B2
    • 2011-10-25
    • US11821147
    • 2007-06-22
    • Jae Yoon LeeJoon Suk Lee
    • Jae Yoon LeeJoon Suk Lee
    • H01L51/52G09G3/14H01J9/00
    • H01L27/3251H01L27/3246H01L51/5212H01L51/56
    • The display device includes a first substrate, a second substrate, a spacer and a connection electrode. The first substrate includes an organic electroluminescence diode device, and the second substrate faces the first substrate and includes a thin film transistor. The connection electrode is configured to electrically connect the thin film transistor and the organic electroluminescence diode device. The display device further includes a first buffer pattern configured to separate two adjacent pixel regions and a second buffer pattern overlying the first buffer pattern and having a predetermined shape. The first buffer pattern is etchable to produce a cavity between the two adjacent pixel regions. The cavity can be enlarged to the extent that the shape of the second buffer pattern is maintained.
    • 显示装置包括第一基板,第二基板,间隔件和连接电极。 第一衬底包括有机电致发光二极管器件,并且第二衬底面对第一衬底并且包括薄膜晶体管。 连接电极被配置为电连接薄膜晶体管和有机电致发光二极管器件。 显示装置还包括配置为分离两个相邻像素区域的第一缓冲图案和覆盖第一缓冲图案并具有预定形状的第二缓冲图案。 第一缓冲图案是可蚀刻的,以在两个相邻像素区域之间产生空腔。 可以将空腔扩大到保持第二缓冲图案的形状的程度。