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1. 发明授权

US08493135B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US08493135B2
公开(公告)日：2013-07-23
申请号：US13100991
申请日：2011-05-04
申请人： Jae-Boum Park
发明人： Jae-Boum Park
IPC分类号： G05F1/10
CPC分类号： H02M1/36 , H02M3/07 , H02M2001/0041
摘要： A semiconductor integrated circuit includes a pre-charge signal generator configured to pre-charge a plurality of oscillation signals to a certain voltage level in a pre-charge mode, wherein the pre-charge signal generator includes: a first storage unit for storing a first pre-charge oscillation signal in response to a reference oscillation signal, a feedback unit for feeding back a second pre-charge oscillation signal, a second storage unit for storing the second pre-charge oscillation signal corresponding to an output signal of the first storage unit in response to the reference oscillation signal, and a pre-charge signal output unit for outputting a pre-charge signal in response to the first pre-charge oscillation signal and the second pre-charge oscillation signal.
摘要翻译：半导体集成电路包括预充电信号发生器，其被配置为在预充电模式下将多个振荡信号预充电到一定电压电平，其中所述预充电信号发生器包括：第一存储单元，用于存储第一响应于参考振荡信号的预充电振荡信号，用于反馈第二预充电振荡信号的反馈单元，用于存储与第一存储单元的输出信号相对应的第二预充电振荡信号的第二存储单元响应于参考振荡信号，以及预充电信号输出单元，用于响应于第一预充电振荡信号和第二预充电振荡信号而输出预充电信号。

2. 发明授权

US07949923B2 Test entry circuit and method for generating test entry signal 失效
标题翻译：测试录入电路和产生测试录入信号的方法
公开(公告)号：US07949923B2
公开(公告)日：2011-05-24
申请号：US12165008
申请日：2008-06-30
申请人： Jae-Boum Park
发明人： Jae-Boum Park
IPC分类号： G06F11/263 , G06F11/30
CPC分类号： G11C29/06 , G11C29/46
摘要： Test entry circuit and method for generating test entry signal including a first source signal generator configured to receive a test signal through a pad to generate a first mode source signal for a first test mode, a second source signal generator configured to count activation transitions of the test signal to generate a second mode source signal for a second test mode and an entry signal generator configured to receive the first and second mode source signals to generate a first test mode entry signal for entering the first test mode and a second test mode entry signal for entering the second test mode.
摘要翻译：用于生成测试入口信号的测试入口电路和方法，包括第一源信号发生器，其被配置为通过焊盘接收测试信号以产生用于第一测试模式的第一模式源信号;第二源信号发生器，被配置为对测试信号以产生用于第二测试模式的第二模式源信号和输入信号发生器，其被配置为接收第一和第二模式源信号以产生用于进入第一测试模式的第一测试模式输入信号和第二测试模式输入信号进入第二个测试模式。

3. 发明申请

US20100289557A1 INTERNAL VOLTAGE GENERATION CIRCUIT 有权
标题翻译：内部电压发生电路
公开(公告)号：US20100289557A1
公开(公告)日：2010-11-18
申请号：US12847451
申请日：2010-07-30
申请人： Jae-Boum PARK
发明人： Jae-Boum PARK
IPC分类号： G05F1/10
CPC分类号： H02M1/088 , H02M3/07
摘要： Internal voltage generation circuit including a reference oscillation signal generator for generating a reference oscillation signal according to a comparison result of a pumping voltage with a reference voltage, an oscillation signal generator for generating a plurality of oscillation signals with a predetermined phase difference and a pumping voltage generator for generating a pumping voltage through sequential charge pumping operations performed in response to the plurality of oscillation signals, respectively.
摘要翻译：内部电压产生电路，包括用于根据具有参考电压的泵浦电压的比较结果产生参考振荡信号的参考振荡信号发生器，用于产生具有预定相位差的多个振荡信号的振荡信号发生器和泵浦电压发生器，用于通过分别响应于所述多个振荡信号执行的顺序电荷泵送操作产生泵浦电压。

4. 发明申请

US20080116957A1 Circuit for initializing voltage pump and voltage pumping device using the same 审中-公开
标题翻译：用于初始化电压泵和电压抽运装置的电路
公开(公告)号：US20080116957A1
公开(公告)日：2008-05-22
申请号：US11726942
申请日：2007-03-22
申请人： Jae Boum Park
发明人： Jae Boum Park
IPC分类号： G05F3/02
CPC分类号： H02M3/073 , H02M1/36
摘要： A voltage pump initialization circuit is provided. The voltage pump initialization circuit includes an initialization signal generator for generating an initialization signal which is activated in response to a power-up signal, and an initializer for initializing a voltage pump in response to the initialization signal.
摘要翻译：提供电压泵初始化电路。电压泵初始化电路包括用于产生响应于上电信号而被激活的初始化信号的初始化信号发生器和用于响应于该初始化信号初始化电压泵的初始化器。

5. 发明授权

US07961837B2 Counter circuit and method of operating the same 失效
标题翻译：计数器电路及其操作方法
公开(公告)号：US07961837B2
公开(公告)日：2011-06-14
申请号：US12605532
申请日：2009-10-26
申请人： Jae-Boum Park , Young-Bo Shim
发明人： Jae-Boum Park , Young-Bo Shim
IPC分类号： G06M3/00
CPC分类号： H03K23/548
摘要： A control unit that outputs a plurality of control signals in response to the input of a plurality of counter enable signals allocated into the numerical value of a multiple of 2 is provided. An operating unit increments or decrements by a multiple of 2 in response to input of the plurality of control signals and count up-down signals.
摘要翻译：提供响应于分配给2的倍数的数值的多个计数器使能信号的输入而输出多个控制信号的控制单元。操作单元响应于多个控制信号的输入和递增计数信号递增或递减2的倍数。

6. 发明授权

US07924073B2 Semiconductor memory device having back-bias voltage in stable range 失效
标题翻译：具有稳定范围的背偏电压的半导体存储器件
公开(公告)号：US07924073B2
公开(公告)日：2011-04-12
申请号：US12165040
申请日：2008-06-30
申请人： Jae-Boum Park
发明人： Jae-Boum Park
IPC分类号： H03L7/06
CPC分类号： G05F3/205
摘要： A back-bias voltage generating circuit controls the back-bias voltage in a predetermined range by detecting the back-bias voltage in case the back-bias voltage level decreases below a predetermined target level. The circuit includes first and second detecting units outputting respective detection signals, which detect a voltage level of the terminal based on respective higher first and lower second target levels. An oscillator generates an oscillation signal that oscillates at a predetermined frequency, in response to a detection signal of the first voltage detecting unit. A charge pumping unit drives the terminal by performing charge pumping in response to the oscillation signal. A voltage level control unit controls the voltage level of the terminal in response to the detection signals, whereby the terminal's voltage level is lower than the first target level and higher than the second target level.
摘要翻译：背偏置电压产生电路通过在背偏电压电平降低到预定目标电平以下的情况下检测反偏压来控制预定范围内的偏置偏压。该电路包括输出相应检测信号的第一和第二检测单元，其基于相应的较高的第一和较低的第二目标电平来检测终端的电压电平。响应于第一电压检测单元的检测信号，振荡器产生以预定频率振荡的振荡信号。电荷泵送单元通过响应于振荡信号进行电荷泵送来驱动端子。电压电平控制单元响应于检测信号控制端子的电压电平，由此端子的电压电平低于第一目标电平并高于第二目标电平。

7. 发明授权

US07839204B2 Core voltage generation circuit and semiconductor device having the same 有权
标题翻译：核心电压产生电路和半导体器件具有相同的功能
公开(公告)号：US07839204B2
公开(公告)日：2010-11-23
申请号：US12164282
申请日：2008-06-30
申请人： Jae-Boum Park
发明人： Jae-Boum Park
IPC分类号： G05F1/10
CPC分类号： G05F1/56
摘要： A semiconductor memory device includes a voltage detector configured to detect a voltage level of an external power supply voltage, a first core voltage generation driver configured to operate when the external power supply voltage is in a high level region and a second core voltage generation driver configured to operate when the external power supply voltage is in a low level region.
摘要翻译：一种半导体存储器件，包括：电压检测器，被配置为检测外部电源电压的电压电平;第一核心电压产生驱动器，被配置为在所述外部电源电压处于高电平区域时工作;以及第二核心电压产生驱动器，以在外部电源电压处于低电平区域时工作。

8. 发明申请

US20100277988A1 INTERNAL SOURCE VOLTAGE GENERATION CIRCUIT AND GENERATION METHOD THEREOF 有权
标题翻译：内部电压发生电路及其产生方法
公开(公告)号：US20100277988A1
公开(公告)日：2010-11-04
申请号：US12492604
申请日：2009-06-26
申请人： Jae-Boum Park
发明人： Jae-Boum Park
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C11/4074 , G11C11/4094
摘要： An internal source voltage generation circuit includes main source voltage driving means configured to drive an internal source voltage terminal to a predetermined voltage level; and additional source voltage driving means configured to additionally drive the internal source voltage terminal in response to a data strobe signal.
摘要翻译：内部源极电压产生电路包括主电源电压驱动装置，被配置为将内部源极电压端子驱动到预定电压电平; 以及额外的源极电压驱动装置，被配置为响应于数据选通信号另外驱动内部源极电压端子。

9. 发明授权

US07768843B2 Semiconductor memory device for generating back-BIAS voltage with variable driving force 有权
标题翻译：用于产生具有可变驱动力的反向BIAS电压的半导体存储器件
公开(公告)号：US07768843B2
公开(公告)日：2010-08-03
申请号：US12165028
申请日：2008-06-30
申请人： Jae-Boum Park
发明人： Jae-Boum Park
IPC分类号： G11C7/00
CPC分类号： G11C5/145 , G11C11/4074
摘要： A semiconductor memory device is capable of maintaining a predetermined back-bias voltage level regardless of operation modes of the semiconductor memory device, by generating a back-bias voltage with driving force changed according to the operation modes. The semiconductor memory device includes an active pumping control signal generating unit for generating an active pumping control signal in response to a plurality of active signals, a voltage detecting unit for detecting a voltage level of a back-bias voltage terminal to output a detection signal, an oscillator for generating an oscillation signal oscillating at a predetermined frequency in response to the detection signal, and a charge pumping unit for performing a charge pumping operation in response to the oscillation signal by controlling a force of driving the back-bias voltage terminal in response to the active pumping control signal.
摘要翻译：无论半导体存储器件的操作模式如何，通过产生根据操作模式改变的驱动力的背偏电压，半导体存储器件能够保持预定的反向偏置电压电平。半导体存储器件包括：主动泵送控制信号产生单元，用于响应于多个有效信号产生主动泵送控制信号;电压检测单元，用于检测反向偏置电压端子的电压电平以输出检测信号; 用于响应于检测信号产生以预定频率振荡的振荡信号的振荡器;以及电荷泵送单元，用于响应于振荡信号通过控制驱动反偏压电压端子的力来执行电荷泵浦操作到主动泵送控制信号。

10. 发明申请

US20100046694A1 COUNTER CIRCUIT AND METHOD OF OPERATING THE SAME 失效
标题翻译：计数器电路及其操作方法
公开(公告)号：US20100046694A1
公开(公告)日：2010-02-25
申请号：US12605532
申请日：2009-10-26
申请人： Young-Bo Shim , Jae-Boum Park
发明人： Young-Bo Shim , Jae-Boum Park
IPC分类号： G06M3/00 , H03K23/50
CPC分类号： H03K23/548
摘要： A control unit that outputs a plurality of control signals in response to the input of a plurality of counter enable signals allocated into the numerical value of a multiple of 2 is provided. An operating unit increments or decrements by a multiple of 2 in response to input of the plurality of control signals and count up-down signals.
摘要翻译：提供响应于分配给2的倍数的数值的多个计数器使能信号的输入而输出多个控制信号的控制单元。操作单元响应于多个控制信号的输入和递增计数信号递增或递减2的倍数。

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