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    • 1. 发明授权
    • Method and apparatus for determining mask layouts for a multiple patterning process
    • 用于确定多个图案化工艺的掩模布局的方法和装置
    • US08028253B2
    • 2011-09-27
    • US11732268
    • 2007-04-02
    • Martin DrapeauJeffrey P. Mayhew
    • Martin DrapeauJeffrey P. Mayhew
    • G06F17/50
    • G03F1/70
    • One embodiment provides a method for determining mask layouts. During operation, the system can receive a design intent. Next, the system can determine a set of critical edges in the design layout, and select a first edge and a second edge. The system can then determine a first trench and a second trench using the first edge and the second edge, respectively. Note that an edge of the first trench may substantially overlap with the first edge, and an edge of the second trench may substantially overlap with the second edge. Next, the system may assign the first trench and the second trench to the first mask layout and the second mask layout, respectively. The system can then increase the first trench and the second trench, thereby improving pattern fidelity. The resulting mask layouts may be used in a double patterning process.
    • 一个实施例提供了一种用于确定掩模布局的方法。 在操作期间,系统可以接收设计意图。 接下来,系统可以确定设计布局中的一组关键边缘,并且选择第一边缘和第二边缘。 然后,系统可以分别使用第一边缘和第二边缘来确定第一沟槽和第二沟槽。 注意,第一沟槽的边缘可以基本上与第一边缘重叠,并且第二沟槽的边缘可以基本上与第二边缘重叠。 接下来,系统可以分别将第一沟槽和第二沟槽分配给第一掩模布局和第二掩模布局。 然后,系统可以增加第一沟槽和第二沟槽,从而提高图案保真度。 所得到的掩模布局可以用于双重图案化工艺中。
    • 2. 发明申请
    • Method and apparatus for determining mask layouts for a multiple patterning process
    • 用于确定多个图案化工艺的掩模布局的方法和装置
    • US20080244504A1
    • 2008-10-02
    • US11732268
    • 2007-04-02
    • Martin DrapeauJeffrey P. Mayhew
    • Martin DrapeauJeffrey P. Mayhew
    • G06F17/50
    • G03F1/70
    • One embodiment provides a method for determining mask layouts. During operation, the system can receive a design intent. Next, the system can determine a set of critical edges in the design layout, and select a first edge and a second edge. The system can then determine a first trench and a second trench using the first edge and the second edge, respectively. Note that an edge of the first trench may substantially overlap with the first edge, and an edge of the second trench may substantially overlap with the second edge. Next, the system may assign the first trench and the second trench to the first mask layout and the second mask layout, respectively. The system can then increase the first trench and the second trench, thereby improving pattern fidelity. The resulting mask layouts may be used in a double patterning process.
    • 一个实施例提供了一种用于确定掩模布局的方法。 在操作期间,系统可以接收设计意图。 接下来,系统可以确定设计布局中的一组关键边缘,并且选择第一边缘和第二边缘。 然后,系统可以分别使用第一边缘和第二边缘来确定第一沟槽和第二沟槽。 注意,第一沟槽的边缘可以基本上与第一边缘重叠,并且第二沟槽的边缘可以基本上与第二边缘重叠。 接下来,系统可以分别将第一沟槽和第二沟槽分配给第一掩模布局和第二掩模布局。 然后,系统可以增加第一沟槽和第二沟槽,从而提高图案保真度。 所得到的掩模布局可以用于双重图案化工艺中。
    • 3. 发明授权
    • Graph based phase shift lithography mapping method and apparatus
    • 基于图形的相移光刻映射方法和装置
    • US07415694B2
    • 2008-08-19
    • US11169099
    • 2005-06-27
    • Jeffrey P. Mayhew
    • Jeffrey P. Mayhew
    • G06F17/50
    • G03F1/30
    • For phase-shifting micro lithography, a method of assigning phase to a set of shifter polygons in a mask layer separated by a set of target features includes assigning a first phase to a first shifter polygon, identifying a set of target features that touch the first shifter polygon, and assigning a second phase to all shifter polygons in the set that touch the set of target features in contact with the first shifter polygon. The set of shifter polygons and the set of target features are separated into aggregates that are spatially isolated from each other such that the phase assignment in one aggregate does not affect the phase assignments in other aggregates. In one embodiment, the first shifter polygon in each aggregate is selected by merging the set of shifter polygons and set of target features into a large polygon, marking a vertex of the large polygon, checking the vertex to make sure it only touches one shifter polygon, and selecting the single shifter polygon touching the vertex as the first shifter polygon.
    • 对于相移微光刻技术,将相位分配给由一组目标特征分离的掩模层中的一组移动器多边形的方法包括:将第一相位分配给第一移位多边形,识别接触第一移位器多边形的一组目标特征 并且将所述第二相位分配给所述组中与触摸所述第一移位器多边形接触的所述目标特征集合的所有移位多边形。 移位器多边形集合和目标特征集合被分离为在彼此空间上隔离的聚合,使得一个聚合中的相位分​​配不影响其他聚合中的相位分​​配。 在一个实施例中,通过将移位器多边形和一组目标特征合并为大多边形,标记大多边形的顶点,检查顶点以确保其仅接触一个移位多边形来选择每个聚合中的第一移位多边形 并且选择接触顶点的单个移位器多边形作为第一移位多边形。
    • 4. 发明授权
    • Phase-shift lithography mapping and apparatus
    • 相移光刻图和仪器
    • US06493866B1
    • 2002-12-10
    • US09608498
    • 2000-06-30
    • Jeffrey P. Mayhew
    • Jeffrey P. Mayhew
    • G06F1750
    • G03F1/30
    • For phase-shifting microlithography, a method of assigning phase to a set of shifter polygons in a mask layer separated by a set of target features includes assigning a first phase to a first shifter polygon, identifying a set of target features that touch the first shifter polygon, and assigning a second phase to all shifter polygons in the set that touch the set of target features in contact with the first shifter polygon. The set of shifter polygons and the set of target features are separated into aggregates that are spatially isolated from each other such that the phase assignment in one aggregate does not affect the phase assignments in other aggregates. In one embodiment, the first shifter polygon in each aggregate is selected by merging the set of shifter polygons and set of target features into a large polygon, marking a vertex of the large polygon, checking the vertex to make sure it only touches one shifter polygon, and selecting the single shifter polygon touching the vertex as the first shifter polygon.
    • 对于相移微平版印刷法,将相位分配给由一组目标特征分隔的掩模层中的一组移动器多边形的方法包括:将第一相位分配给第一移位多边形,识别接触第一移位器的一组目标特征 多边形,并且将第二阶段分配给所述组中与触摸与第一移位器多边形接触的目标特征集合的所有移位多边形。 移位器多边形集合和目标特征集合被分离为在彼此空间上隔离的聚合,使得一个聚合中的相位分​​配不影响其他聚合中的相位分​​配。 在一个实施例中,通过将移位器多边形和一组目标特征合并为大多边形,标记大多边形的顶点,检查顶点以确保其仅接触一个移位多边形来选择每个聚合中的第一移位多边形 并且选择接触顶点的单个移位器多边形作为第一移位多边形。
    • 6. 发明授权
    • Phase-shift lithography mapping method and apparatus
    • 相移光刻映射方法和装置
    • US06918105B2
    • 2005-07-12
    • US10315906
    • 2002-12-09
    • Jeffrey P. Mayhew
    • Jeffrey P. Mayhew
    • G03F1/30G06F17/50G03C5/04
    • G03F1/30
    • For phase-shifting microlithography, a method of assigning phase to a set of shifter polygons in a mask layer separated by a set of target features includes assigning a first phase to a first shifter polygon, identifying a set of target features that touch the first shifter polygon, and assigning a second phase to all shifter polygons in the set that touch the set of target features in contact with the first shifter polygon. The set of shifter polygons and the set of target features are separated into aggregates that are spatially isolated from each other such that the phase assignment in one aggregate does not affect the phase assignments in other aggregates. In one embodiment, the first shifter polygon in each aggregate is selected by merging the set of shifter polygons and set of target features into a large polygon, marking a vertex of the large polygon, checking the vertex to make sure it only touches one shifter polygon, and selecting the single shifter polygon touching the vertex as the first shifter polygon.
    • 对于相移微平版印刷法,将相位分配给由一组目标特征分隔的掩模层中的一组移动器多边形的方法包括:将第一相位分配给第一移位多边形,识别接触第一移位器的一组目标特征 多边形,并且将第二阶段分配给所述组中与触摸与第一移位器多边形接触的目标特征集合的所有移位多边形。 移位器多边形集合和目标特征集合被分离为在彼此空间上隔离的聚合,使得一个聚合中的相位分​​配不影响其他聚合中的相位分​​配。 在一个实施例中,通过将移位器多边形和一组目标特征合并为大多边形,标记大多边形的顶点,检查顶点以确保其仅接触一个移位多边形来选择每个聚合中的第一移位多边形 并且选择接触顶点的单个移位器多边形作为第一移位多边形。