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    • 1. 发明授权
    • Diamond-based chemical sensors
    • 基于钻石的化学传感器
    • US5362975A
    • 1994-11-08
    • US89170
    • 1993-07-08
    • Jesko von WindheimVasudev Venkatesan
    • Jesko von WindheimVasudev Venkatesan
    • G01N27/12G01N27/00H01L29/16H01L29/45H01L29/47H01L29/872H01L29/66
    • H01L29/1602G01N27/129H01L29/45H01L29/872
    • A chemical sensor includes a diode or a transistor fabricated in diamond. A diamond-based diode chemical sensor includes a first diamond layer of first conductivity type and a second diamond or non-diamond layer of second conductivity type. A relatively highly doped region is formed in the first diamond layer, adjacent an electrical contact to reduce the frequency dependance of the sensor's capacitance/voltage characteristic. A diamond-based transistor sensor includes a controlling electrode such as a gate which is configured to allow a chemical external to the transistor to alter the characteristics of the transistor. Relatively highly doped regions are formed adjacent the transistor's controlling electrodes, such as the source and drain. A heater is thermally coupled to the sensor for heating the sensor to a predetermined operating temperature. A temperature monitor is also coupled to the sensor for monitoring the sensor temperature.
    • 化学传感器包括二极管或以金刚石制造的晶体管。 金刚石二极管化学传感器包括第一导电类型的第一金刚石层和第二导电类型的第二金刚石或非金刚石层。 在第一金刚石层中形成相对高掺杂的区域,与电触点相邻,以降低传感器电容/电压特性的频率依赖性。 基于金刚石的晶体管传感器包括诸如栅极的控制电极,其被配置为允许晶体管外部的化学物质改变晶体管的特性。 在晶体管的控制电极(例如源极和漏极)附近形成相对高掺杂的区域。 加热器热耦合到传感器,用于将传感器加热到预定的工作温度。 温度监测器还耦合到传感器用于监测传感器温度。
    • 2. 发明授权
    • Diamond schottky diodes and gas sensors fabricated therefrom
    • 金刚石肖特基二极管和由此制造的气体传感器
    • US5285084A
    • 1994-02-08
    • US939446
    • 1992-09-02
    • Jesko von WindheimVasudev Venkatesan
    • Jesko von WindheimVasudev Venkatesan
    • G01N27/00H01L29/16H01L29/45H01L29/872H01L29/66
    • H01L29/872G01N27/129H01L29/1602H01L29/45
    • Schottky diodes and gas sensors include a diamond layer having a Schottky contact thereon and an ohmic contact thereon, wherein the diamond layer includes a highly doped region adjacent the ohmic contact to provide a low resistance ohmic contact. Dramatically reduced frequency dependence of the capacitance/voltage characteristic of Schottky diodes and gas sensors formed thereby, compared to Schottky diodes and gas sensors which do not include the highly doped region adjacent the ohmic contact, is provided. The highly doped region is preferably boron doped at a concentration of at least 10.sup.20 atoms per cubic centimeter to form an ohmic contact with a contact resistance of less than 10.sup.-3 .OMEGA.-cm.sup.2. The ohmic contact is preferably a back contact on the face of the diamond layer opposite the Schottky contact.
    • 肖特基二极管和气体传感器包括其上具有肖特基接触和其上的欧姆接触的金刚石层,其中金刚石层包括邻近欧姆接触的高掺杂区域以提供低电阻欧姆接触。 提供了与肖特基二极管和气体传感器相比较的肖特基二极管和由此形成的气体传感器的电容/电压特性显着降低的频率依赖性,其不包括与欧姆接触相邻的高掺杂区域。 高掺杂区域优选以至少1020个原子/立方厘米的浓度掺杂硼以形成具有小于10-3(Ω·cm-cm)的接触电阻的欧姆接触。 欧姆接触优选为与肖特基接触相对的金刚石层的表面上的背接触。
    • 8. 发明授权
    • Diamond field emission acceleration sensor
    • 钻石场发射加速度传感器
    • US5679895A
    • 1997-10-21
    • US432518
    • 1995-05-01
    • Jesko von Windheim
    • Jesko von Windheim
    • G01P15/08
    • G01P15/0894
    • An acceleration sensor includes an acceleration mass and a substrate mounted so that a cavity is defined therebetween and so that the acceleration mass moves relative to the substrate when an acceleration of the sensor changes. The sensor also includes a diamond field emitter for generating an electron beam through the cavity between the acceleration mass and the substrate. Accordingly, the distance between the acceleration mass and the substrate affects the current of the electron beam which is measured to determine the acceleration of the sensor. The sensor may alternately include an annular extraction electrode in a cavity between a substrate and a collector together with a diamond field emitter for generating an electron beam which passes through the annular extraction electrode. The annular extraction electrode is moveable relative to the substrate in response to changes in an acceleration acting on the sensor. Accordingly, the electron beam current changes as the annular extraction electrode moves, and the current can be measured to determine the acceleration acting on the sensor.
    • 加速度传感器包括加速度质量和安装的基板,以便在传感器的加速度变化时使空腔在其间限定,使得加速质量相对于基板移动。 传感器还包括金刚石场发射器,用于通过加速质量块和衬底之间的空腔产生电子束。 因此,加速质量和衬底之间的距离影响测量的电子束的电流,以确定传感器的加速度。 该传感器可以在金属场发射器和衬底与集电器之间的空腔中交替地包括环形引出电极,用于产生通过环形引出电极的电子束。 响应于作用在传感器上的加速度的变化,环形引出电极可相对于基板移动。 因此,随着环状引出电极移动,电子束电流变化,可以测量电流以确定作用在传感器上的加速度。
    • 9. 发明申请
    • Medical Devices Incorporating Thermoelectric Transducer and Controller
    • 集成热电传感器和控制器的医疗设备
    • US20120310313A1
    • 2012-12-06
    • US13584853
    • 2012-08-14
    • Lesco L. RogersJesko von WindheimSeri Lee
    • Lesco L. RogersJesko von WindheimSeri Lee
    • A61N1/36
    • A61F7/007A61F2007/0075F25B21/02F25B2321/021H01L35/32
    • A temperature control system may include a thermoelectric device, a controller electrically coupled to the thermoelectric device, a heat transfer structure thermally coupled to the thermoelectric device, a temperature controlled medium thermally coupled to the thermoelectric device and a temperature feedback sensor. The controller may be configured to sense a first value of an electrical characteristic of the thermoelectric device and to generate a first electrical control to activate the thermoelectric device in response to sensing the first value of the electrical characteristic of the thermoelectric device. The controller may be further configured to sense a second value of the electrical characteristic of the thermoelectric device and to generate a second electrical control signal to activate the thermoelectric device in response to sensing the second value of the electrical characteristic of the thermoelectric device.
    • 温度控制系统可以包括热电装置,电耦合到热电装置的控制器,热耦合到热电装置的热传递结构,热耦合到热电装置的温度控制介质和温度反馈传感器。 控制器可以被配置为感测热电装置的电特性的第一值,并且响应于感测热电装置的电特性的第一值而产生第一电控制以激活热电装置。 控制器还可以被配置成感测热电装置的电特性的第二值,并且响应于感测热电装置的电特性的第二值而产生第二电控制信号以激活热电装置。
    • 10. 发明授权
    • Medical devices incorporating thermoelectric transducer and controller
    • 结合热电换能器和控制器的医疗设备
    • US08267983B2
    • 2012-09-18
    • US12693016
    • 2010-01-25
    • Lesco L. RogersJesko von WindheimSeri Lee
    • Lesco L. RogersJesko von WindheimSeri Lee
    • A61F7/12
    • F25B21/02A61F7/007A61F2007/0075F25B2321/021H01L35/32
    • A temperature control system may include a thermoelectric device, a controller electrically coupled to the thermoelectric device, a heat transfer structure thermally coupled to the thermoelectric device, and a temperature controlled medium thermally coupled to the thermoelectric device. The controller may be configured to sense a first value of an electrical characteristic of the thermoelectric device and to generate a first electrical control signal to pump heat through the thermoelectric device in response to sensing the first value of the electrical characteristic of the thermoelectric device. The controller may be further configured to sense a second value of the electrical characteristic of the thermoelectric device and to generate a second electrical control signal to pump heat through the thermoelectric device in response to sensing the second value of the electrical characteristic of the thermoelectric device.
    • 温度控制系统可以包括热电装置,电耦合到热电装置的控制器,热耦合到热电装置的热传递结构,以及热耦合到热电装置的温度控制介质。 控制器可以被配置为响应于感测热电装置的电特性的第一值而感测热电装置的电特性的第一值并且产生第一电控制信号以便通过热电装置泵送热量。 控制器还可以被配置为响应于感测热电装置的电特性的第二值而感测热电装置的电特性的第二值并且产生第二电控制信号以便通过热电装置泵送热量。