专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08884318B2 Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus 有权
标题翻译：具有多单元阵列的半导体发光器件，发光模块和照明装置
公开(公告)号：US08884318B2
公开(公告)日：2014-11-11
申请号：US13034279
申请日：2011-02-24
申请人： Su Yeol Lee , Yong Tae Kim , Jin Bock Lee , Gi Bum Kim
发明人： Su Yeol Lee , Yong Tae Kim , Jin Bock Lee , Gi Bum Kim
IPC分类号： H01L33/08 , H01L23/00 , H01L27/15 , H01L33/30 , H01L33/62
CPC分类号： H01L27/156 , H01L24/24 , H01L27/153 , H01L33/30 , H01L33/62 , H01L2224/48091 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.
摘要翻译：一种半导体发光器件，包括：衬底; 多个发光单元，设置在所述基板的上表面上，所述发光单元各自具有有源层; 形成在所述基板上的多个连接部分，其上形成有发光单元，以将所述发光单元以并联或串联平行结构连接; 以及形成在发光单元的表面上的绝缘层，以防止连接部分和发光单元之间的不期望的连接。发光单元包括至少一个有缺陷的发光单元，并且与缺陷发光单元有关的至少一个连接部分断开。

2. 发明授权

US08610162B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08610162B2
公开(公告)日：2013-12-17
申请号：US13286807
申请日：2011-11-01
申请人： Seok Min Hwang , Jae Yoon Kim , Jin Bock Lee
发明人： Seok Min Hwang , Jae Yoon Kim , Jin Bock Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers; and first and second electrodes disposed on one surface of each of the first and second conductive type semiconductor layers, respectively, wherein at least one of the first and second electrodes includes a pad part and a finger part formed to extend from the pad part, and the end of the finger part has an annular shape. Because a phenomenon in which current is concentrated in a partial area of the finger part is minimized, tolerance to electrostatic discharge (ESD) can be strengthened and light extraction efficiency can be improved.
摘要翻译：半导体发光器件包括：第一和第二导电类型半导体层; 设置在所述第一和第二导电类型半导体层之间的有源层; 以及分别设置在每个第一和第二导电类型半导体层的一个表面上的第一和第二电极，其中第一和第二电极中的至少一个包括衬垫部分和形成为从衬垫部分延伸的指状部分，以及手指部分的端部具有环形形状。由于电流集中在手指部分的部分区域的现象最小化，因此可以增强对静电放电（ESD）的耐受性，并且可以提高光提取效率。

3. 发明申请

US20090258454A1 METHOD OF MANUFACTURING GALLIUM NITRIDE BASED LIGHT EMITTING DIODE HAVING SURFACE IRREGULARITIES 审中-公开
标题翻译：制造具有表面不规则性的基于氮化镓的发光二极管的方法
公开(公告)号：US20090258454A1
公开(公告)日：2009-10-15
申请号：US12490891
申请日：2009-06-24
申请人： Dae Yeon KIM , Sung Min Hwang , Jin Bock Lee , Sang Ho Yoon
发明人： Dae Yeon KIM , Sung Min Hwang , Jin Bock Lee , Sang Ho Yoon
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/22 , H01L33/44
摘要： An n-type GaN layer is formed on a substrate, and an active layer is formed on the n-type GaN layer. A p-type GaN layer is formed on the active layer, and portions of the p-type GaN layer and the active layer are mesa-etched so as to expose a portion of the n-type GaN layer. An irregularities forming layer is formed on the p-type GaN layer and a photosensitive film pattern for forming a surface irregularities pattern is formed on the irregularities forming layer. The irregularities forming layer is selectively wet-etched by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities. A p-electrode is formed on the p-type GaN layer having the surface irregularities formed thereon, and an n-electrode is formed on the exposed n-type GaN layer.”
摘要翻译：在衬底上形成n型GaN层，在n型GaN层上形成有源层。在有源层上形成p型GaN层，并且对p型GaN层和有源层的部分进行台面蚀刻，以暴露n型GaN层的一部分。在p型GaN层上形成凹凸形成层，在凹凸形成层上形成用于形成表面凹凸图案的感光膜图案。通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则。在其上形成有表面凹凸的p型GaN层上形成p电极，在暴露的n型GaN层上形成n电极。

4. 发明申请

US20070184568A1 Method of manufacturing gallium nitride based light emitting diode 审中-公开
标题翻译：制造氮化镓基发光二极管的方法
公开(公告)号：US20070184568A1
公开(公告)日：2007-08-09
申请号：US11646406
申请日：2006-12-28
申请人： Dae Yeon Kim , Sung Min Hwang , Jin Bock Lee , Sang Ho Yoon
发明人： Dae Yeon Kim , Sung Min Hwang , Jin Bock Lee , Sang Ho Yoon
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/44
摘要： Provided a method of manufacturing a GaN-based LED comprising forming an n-type GaN layer on a substrate; forming an active layer on the n-type GaN layer; forming a p-type GaN layer on the active layer; mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer; forming an irregularities forming layer on the p-type GaN layer; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and forming an n-electrode on the exposed n-type GaN layer.
摘要翻译：提供一种制造GaN基LED的方法，包括在衬底上形成n型GaN层; 在n型GaN层上形成有源层; 在有源层上形成p型GaN层; 蚀刻p型GaN层和有源层的部分，以暴露n型GaN层的一部分; 在p型GaN层上形成凹凸形成层; 形成用于在所述凹凸形成层上形成表面凹凸图案的感光膜图案; 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则; 在其上形成有表面凹凸的p型GaN层上形成p电极; 以及在暴露的n型GaN层上形成n电极。

5. 发明授权

US08969895B2 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08969895B2
公开(公告)日：2015-03-03
申请号：US13225979
申请日：2011-09-06
申请人： Jae Yoon Kim , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
发明人： Jae Yoon Kim , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
IPC分类号： H01L33/00 , H01L33/40 , H01L33/38 , H01L33/42 , H01L33/32
CPC分类号： H01L33/005 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/42 , H01L2933/0016 , H01L2933/0058
摘要： A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
摘要翻译：一种半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层依次层叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

6. 发明授权

US08809893B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08809893B2
公开(公告)日：2014-08-19
申请号：US13127847
申请日：2009-11-16
申请人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
发明人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC分类号： H01L33/62
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.
摘要翻译：本发明涉及一种用于半导体的垂直/水平发光二极管。本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

7. 发明申请

US20130240937A1 SEMICONDUCTOR LIGHT-EMITTING DIODE CHIP, LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体发光二极管芯片，发光器件及其制造方法
公开(公告)号：US20130240937A1
公开(公告)日：2013-09-19
申请号：US13820459
申请日：2011-09-01
申请人： Seung Wan Chae , Tae Hun Kim , Su Yeol Lee , Jin Bock Lee , Jin Hwan Kim , Seung Jae Lee , Bo Kyoung Kim , Jong Ho Lee
发明人： Seung Wan Chae , Tae Hun Kim , Su Yeol Lee , Jin Bock Lee , Jin Hwan Kim , Seung Jae Lee , Bo Kyoung Kim , Jong Ho Lee
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L24/32 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要： There is provided a semiconductor light emitting diode (LED) chip including: a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate; a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer; and a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.
摘要翻译：提供了一种半导体发光二极管（LED）芯片，其包括：半导体发光二极管单元，包括透光基板，以及顺序形成的第一导电型半导体层，有源层和第二导电类型半导体层在所述透光性基板的上表面上; 后反光层叠体，其包括形成在所述透光性基板的下表面上并由具有预定折射率的材料制成的辅助光学层和形成在所述辅助光学层的下表面上的金属反射膜; 以及设置在后反射层叠体的下表面上并包括由共晶金属材料制成的接合金属层和形成为防止元件在接合金属层和金属反射膜之间扩散的防扩散膜的接合层压体。

8. 发明申请

US20110210352A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS 有权
标题翻译：具有多细胞阵列，发光模块和照明装置的半导体发光器件
公开(公告)号：US20110210352A1
公开(公告)日：2011-09-01
申请号：US13034279
申请日：2011-02-24
申请人： Su Yeol LEE , Yong Tae KIM , Jin Bock LEE , Gi Bum KIM
发明人： Su Yeol LEE , Yong Tae KIM , Jin Bock LEE , Gi Bum KIM
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L24/24 , H01L27/153 , H01L33/30 , H01L33/62 , H01L2224/48091 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.
摘要翻译：一种半导体发光器件，包括：衬底; 多个发光单元，设置在所述基板的上表面上，所述发光单元各自具有有源层; 形成在所述基板上的多个连接部分，其上形成有发光单元，以将所述发光单元以并联或串联平行结构连接; 以及形成在发光单元的表面上的绝缘层，以防止连接部分和发光单元之间的不期望的连接。发光单元包括至少一个有缺陷的发光单元，并且与缺陷发光单元有关的至少一个连接部分断开。

9. 发明申请

US20150084537A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
公开(公告)号：US20150084537A1
公开(公告)日：2015-03-26
申请号：US14338225
申请日：2014-07-22
申请人： Pun Jae . CHOI , Sang Bum LEE , Jin Bock LEE , Yu Seung KIM , Sang Yeob SONG
发明人： Pun Jae . CHOI , Sang Bum LEE , Jin Bock LEE , Yu Seung KIM , Sang Yeob SONG
IPC分类号： H01L25/13 , H05B33/08 , H01L33/50 , H01L33/48 , H01L33/38 , H01L33/54
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

10. 发明申请

US20140231859A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20140231859A1
公开(公告)日：2014-08-21
申请号：US14236582
申请日：2011-08-01
申请人： Jae Yoon Kim , Seok Min Hwang , Su Yeol Lee , Seung Wan Chae , Jae Ho Han , Jin Bock Lee
发明人： Jae Yoon Kim , Seok Min Hwang , Su Yeol Lee , Seung Wan Chae , Jae Ho Han , Jin Bock Lee
IPC分类号： H01L33/38 , H01L33/62 , H01L33/32
CPC分类号： H01L33/387 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.
摘要翻译：半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式