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1. 发明授权

US09048480B2 Anion exchange polymer electrolytes 有权
标题翻译：阴离子交换聚合物电解质
公开(公告)号：US09048480B2
公开(公告)日：2015-06-02
申请号：US13584183
申请日：2012-08-13
申请人： Yu Seung Kim , Dae Sik Kim
发明人： Yu Seung Kim , Dae Sik Kim
IPC分类号： H01M4/62 , C08J5/22 , H01M8/10 , H01M4/36 , B01J41/12 , H01M8/08
CPC分类号： H01M8/1039 , B01J41/13 , C08G65/4006 , C08G65/48 , C08J5/22 , C08J5/2262 , H01M4/36 , H01M4/623 , H01M8/083 , H01M8/1025 , Y02E60/521
摘要： Anion exchange polymer electrolytes that include guanidinium functionalized polymers may be used as membranes and binders for electrocatalysts in preparation of anodes for electrochemical cells such as solid alkaline fuel cells.
摘要翻译：包括胍官能化聚合物的阴离子交换聚合物电解质可以用作电催化剂的膜和粘合剂，用于制备电化学电池如固体碱性燃料电池的阳极。

2. 发明申请

US20150084537A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
公开(公告)号：US20150084537A1
公开(公告)日：2015-03-26
申请号：US14338225
申请日：2014-07-22
申请人： Pun Jae . CHOI , Sang Bum LEE , Jin Bock LEE , Yu Seung KIM , Sang Yeob SONG
发明人： Pun Jae . CHOI , Sang Bum LEE , Jin Bock LEE , Yu Seung KIM , Sang Yeob SONG
IPC分类号： H01L25/13 , H05B33/08 , H01L33/50 , H01L33/48 , H01L33/38 , H01L33/54
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

3. 发明授权

US08906575B2 Minimizing electrode contamination in an electrochemical cell 有权
标题翻译：最大限度地减少电化学电池中的电极污染
公开(公告)号：US08906575B2
公开(公告)日：2014-12-09
申请号：US13412364
申请日：2012-03-05
申请人： Yu Seung Kim , Piotr Zelenay , Christina Johnston
发明人： Yu Seung Kim , Piotr Zelenay , Christina Johnston
IPC分类号： H01M8/10 , H01M8/02
CPC分类号： H01M8/1004 , H01M8/0289 , Y02E60/521
摘要： An electrochemical cell assembly that is expected to prevent or at least minimize electrode contamination includes one or more getters that trap a component or components leached from a first electrode and prevents or at least minimizes them from contaminating a second electrode.
摘要翻译：期望防止或至少最小化电极污染的电化学电池组件包括捕获从第一电极浸出的组分或组分的一种或多种吸气剂，并且防止或至少使它们不会污染第二电极。

4. 发明申请

US20140024728A1 ANION EXCHANGE POLYMER ELECTROLYTES 有权
标题翻译：阴离子交换聚合物电解质
公开(公告)号：US20140024728A1
公开(公告)日：2014-01-23
申请号：US13584183
申请日：2012-08-13
申请人： Yu Seung Kim , Dae Sik Kim
发明人： Yu Seung Kim , Dae Sik Kim
IPC分类号： H01M8/10
CPC分类号： H01M8/1039 , B01J41/13 , C08G65/4006 , C08G65/48 , C08J5/22 , C08J5/2262 , H01M4/36 , H01M4/623 , H01M8/083 , H01M8/1025 , Y02E60/521
摘要： Anion exchange polymer electrolytes that include guanidinium functionalized polymers may be used as membranes and binders for electrocatalysts in preparation of anodes for electrochemical cells such as solid alkaline fuel cells.
摘要翻译：包括胍官能化聚合物的阴离子交换聚合物电解质可以用作电催化剂的膜和粘合剂，用于制备电化学电池如固体碱性燃料电池的阳极。

5. 发明授权

US08200147B2 Wireless communication system for controlling communication area by jamming 有权
标题翻译：用于通过干扰控制通信区域的无线通信系统
公开(公告)号：US08200147B2
公开(公告)日：2012-06-12
申请号：US12626160
申请日：2009-11-25
申请人： Hee-Jo Lee , Yu-Seung Kim , Hyogon Kim
发明人： Hee-Jo Lee , Yu-Seung Kim , Hyogon Kim
IPC分类号： H04K3/00
CPC分类号： H04K3/43 , H04K3/86 , H04K2203/18
摘要： A wireless communication system for geographically controlling a communication area includes an access point for communicating with a terminal in a first area, and a jammer for generating noise for intercepting communication between the access point and a terminal in a second area. A jamming boundary for dividing an area in which the terminal can communicate with the access point and an area in which the terminal cannot communicate with the access point in an area in which the first area and the second area are overlapped is formed, and the jamming boundary is formed by a ratio between power of a signal transmitted to the terminal by the access point and power of a signal of the noise.
摘要翻译：用于地理上控制通信区域的无线通信系统包括用于与第一区域中的终端进行通信的接入点，以及用于产生用于拦截接入点和第二区域中的终端之间的通信的噪声的干扰信号。形成用于划分终端可以与接入点通信的区域的干扰边界以及在第一区域和第二区域重叠的区域中终端不能与接入点通信的区域，并且干扰边界由通过接入点发送到终端的信号的功率与噪声信号的功率之间的比率形成。

6. 发明申请

US20120032218A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120032218A1
公开(公告)日：2012-02-09
申请号：US13125256
申请日：2009-10-22
申请人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
发明人： Pun Jae Choi , Yu Seung Kim , Jin Bock Lee
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
摘要翻译：提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

7. 发明申请

US20110065018A1 ANION EXCHANGE POLYMER ELECTROLYTES 有权
标题翻译：阴离子交换聚合物电解质
公开(公告)号：US20110065018A1
公开(公告)日：2011-03-17
申请号：US12878844
申请日：2010-09-09
申请人： Yu Seung Kim , Dae Sik Kim , Kwan-Soo Lee
发明人： Yu Seung Kim , Dae Sik Kim , Kwan-Soo Lee
IPC分类号： B01J41/12 , H01M8/10
CPC分类号： H01M8/083 , C08J5/225 , H01M8/1018
摘要： Solid anion exchange polymer electrolytes and compositions comprising chemical compounds comprising a polymeric core, a spacer A, and a guanidine base, wherein said chemical compound is uniformly dispersed in a suitable solvent and has the structure: wherein: i) A is a spacer having the structure O, S, SO2, —NH—, —N(CH2)n, wherein n=1-10, —(CH2)n—CH3—, wherein n=1-10, SO2-Ph, CO-Ph, wherein R5, R6, R7 and R8 each are independently —H, —NH2, F, Cl, Br, CN, or a C1-C6 alkyl group, or any combination of thereof; ii) R9, R10, R11, R12, or R13 each independently are —H, —CH3, —NH2, —NO, —CHnCH3 where n=1-6, HC═O—, NH2C═O—, —CHnCOOH where n=1-6, —(CH2)n—C(NH2)—COOH where n=1-6, —CH—(COOH)—CH2—COOH, —CH2—CH(O—CH2CH3)2, —(C═S)—NH2, —(C═NH)—N—(CH2)nCH3, where n=0-6, —NH—(C═S)—SH, —CH2—(C═O)—O—C(CH3)3, —O—(CH2)n—CH—(NH2)—COOH, where n=1-6, —(CH2)n—CH═CH wherein n=1-6, —(CH2)n—CH—CN wherein n=1-6, an aromatic group such as a phenyl, benzyl, phenoxy, methylbenzyl, nitrogen-substituted benzyl or phenyl groups, a halide, or halide-substituted methyl groups; and iii) wherein the composition is suitable for use in a membrane electrode assembly.
摘要翻译：固体阴离子交换聚合物电解质和包含化合物的组合物，其包含聚合物芯，间隔物A和胍碱，其中所述化合物均匀分散在合适的溶剂中并具有以下结构：其中：i）A是具有结构O，S，SO 2，-NH-，-N（CH 2）n，其中n = 1-10， - （CH 2）n -CH 3 - ，其中n = 1-10，SO 2 -P Ph，CO-Ph，其中 R5，R6，R7和R8各自独立地为-H，-NH2，F，Cl，Br，CN或C1-C6烷基，或其任何组合; ii）R9，R10，R11，R12或R13各自独立地为-H，-CH3，-NH2，-NO，-CHnCH3，其中n = 1-6，HC = O - ，NH2C = O - ， - CHNCOOH，其中n = 1-6， - （CH 2）n -C（NH 2）-COOH其中n = 1-6，-CH-（COOH）-CH 2 -COOH，-CH 2 -CH（O-CH 2 CH 3）2， - （C = S）-NH 2， - （C = NH）-N-（CH 2）n CH 3，其中n = 0-6，-NH-（C = S）-SH，-CH 2 - （C = O） CH3）3，-O-（CH2）n-CH-（NH2）-COOH，其中n = 1-6， - （CH2）n-CH = CH其中n = 1-6， - （CH2）n-CH -CN，其中n = 1-6，芳基如苯基，苄基，苯氧基，甲基苄基，氮取代的苄基或苯基，卤化物或卤化物取代的甲基; 和iii）其中所述组合物适用于膜电极组件。

8. 发明申请

US20110008924A1 METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
公开(公告)号：US20110008924A1
公开(公告)日：2011-01-13
申请号：US12885882
申请日：2010-09-20
申请人： Jong In YANG , Yu Seung KIM , Sang Yeob SONG , Si Hyuk LEE , Tae Hyung KIM
发明人： Jong In YANG , Yu Seung KIM , Sang Yeob SONG , Si Hyuk LEE , Tae Hyung KIM
IPC分类号： H01L33/30
CPC分类号： H01L21/3086 , H01L21/30612 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
摘要翻译：提供了在III族氮化物半导体衬底上形成图案的方法。根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

9. 发明申请

US20090085043A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090085043A1
公开(公告)日：2009-04-02
申请号：US12210472
申请日：2008-09-15
申请人： Sang Yeob SONG , Jin Hyun LEE , Yu Seung KIM , Kwang Ki CHOI , Pun Jae CHOI , Hyun Soo KIM , Sang Bum LEE
发明人： Sang Yeob SONG , Jin Hyun LEE , Yu Seung KIM , Kwang Ki CHOI , Pun Jae CHOI , Hyun Soo KIM , Sang Bum LEE
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
摘要翻译：公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性器件的低压工作及其制造方法。半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

10. 发明授权

US09093685B2 Methods of making membrane electrode assemblies 有权
标题翻译：制造膜电极组件的方法
公开(公告)号：US09093685B2
公开(公告)日：2015-07-28
申请号：US12321466
申请日：2009-01-20
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q. T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q. T. Rockward
IPC分类号： H01M4/88 , H01M8/10 , H01M8/02
CPC分类号： H01M8/1004 , H01M4/8814 , H01M4/8828 , H01M4/8842 , H01M4/8882 , H01M4/8896 , H01M8/1023 , H01M8/1039 , Y02E60/522 , Y02P70/56
摘要： Method of making a membrane electrode assembly comprising: providing a membrane comprising a perfluorinated sulfonic acid; providing a first transfer substrate; applying to a surface of the first transfer substrate a first ink, said first ink comprising an ionomer and a catalyst; applying to the first ink a suitable non-aqueous swelling agent; forming an assembly comprising: the membrane; and the first transfer substrate, wherein the surface of the first transfer substrate comprising the first ink and the non-aqueous swelling agent is disposed upon one surface of the membrane; and heating the assembly at a temperature of 150° C. or less and at a pressure of from about 250 kPa to about 3000 kPa or less for a time suitable to allow substantially complete transfer of the first ink and the second ink to the membrane; and cooling the assembly to room temperature and removing the first transfer substrate and the second transfer substrate.
摘要翻译：制造膜电极组件的方法，包括：提供包含全氟化磺酸的膜; 提供第一转印衬底; 向所述第一转印基板的表面施加第一墨，所述第一墨包含离聚物和催化剂; 向第一油墨施加合适的非水溶胀剂; 形成组件，其包括：所述膜; 和第一转印衬底，其中包含第一油墨和非水溶胀剂的第一转印衬底的表面设置在膜的一个表面上; 并且在150℃或更低的温度和约250kPa至约3000kPa或更低的压力下加热所述组件适合允许所述第一油墨和所述第二油墨基本上完全转移到所述膜的时间; 并将组件冷却至室温并除去第一转移衬底和第二转移衬底。

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