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1. 发明授权

US09324496B2 Multilayer ceramic electronic component and method of manufacturing the same 有权
标题翻译：多层陶瓷电子元件及其制造方法
公开(公告)号：US09324496B2
公开(公告)日：2016-04-26
申请号：US13620239
申请日：2012-09-14
申请人： Jong Ho Lee , Jae Yeol Choi , Doo Young Kim , Myung Jun Park , Yu Na Kim , Sung Woo Kim
发明人： Jong Ho Lee , Jae Yeol Choi , Doo Young Kim , Myung Jun Park , Yu Na Kim , Sung Woo Kim
IPC分类号： H01G4/012 , H01G4/30 , H01G4/008 , H01G4/005 , H01G4/12
CPC分类号： H01G4/012 , H01G4/005 , H01G4/0085 , H01G4/12 , H01G4/30
摘要： There is provided a multilayer ceramic electronic component, including: a ceramic body including a dielectric layer and having first and third surfaces opposing each other in a length direction of the dielectric layer and second and fourth surfaces opposing each other in a width direction thereof; and a multilayer part including a first internal electrode and a second internal electrode disposed to oppose each other, while having the dielectric layer interposed there between in the ceramic body, and exposed to the first and third surfaces of the ceramic body, respectively; wherein one or more residual carbon removing path parts are formed to be protruded on both side of the first and second internal electrodes in a length direction of the ceramic body.
摘要翻译：提供了一种多层陶瓷电子部件，其包括：陶瓷体，其包括电介质层，并且具有在电介质层的长度方向上彼此相对的第一和第三表面以及沿其宽度方向彼此相对的第二和第四表面; 以及包括第一内部电极和第二内部电极的多层部分，其分别在陶瓷体中介于介电层之间并且分别暴露于陶瓷体的第一和第三表面; 其中一个或多个剩余碳去除路径部分形成为在陶瓷体的长度方向上在第一和第二内部电极的两侧上突出。

2. 发明授权

US09287181B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09287181B2
公开(公告)日：2016-03-15
申请号：US14592842
申请日：2015-01-08
申请人： Wei-Hsiung Tseng , Ju-Youn Kim , Seok-Jun Won , Jong-Ho Lee , Hye-Lan Lee , Yong-Ho Ha
发明人： Wei-Hsiung Tseng , Ju-Youn Kim , Seok-Jun Won , Jong-Ho Lee , Hye-Lan Lee , Yong-Ho Ha
IPC分类号： H01L21/8238 , H01L29/66 , H01L21/02 , H01L21/28 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/165
CPC分类号： H01L27/0924 , H01L21/02126 , H01L21/0214 , H01L21/0217 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/823821 , H01L21/823842 , H01L21/823857 , H01L21/823864 , H01L21/845 , H01L29/165 , H01L29/41791 , H01L29/435 , H01L29/4958 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/6681 , H01L29/7848
摘要： Provided is a method for fabricating a semiconductor device. The method includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a high-k dielectric layer in the first trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing; after the annealing, successively removing the blocking layer and the diffusion layer; forming a first barrier layer on the high-k dielectric layer; successively forming a work function adjustment layer and a gate conductor on the first barrier layer; and forming a capping layer on the gate conductor.
摘要翻译：提供一种制造半导体器件的方法。该方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括第一沟槽; 在第一沟槽中形成高k电介质层; 在高k电介质层上依次形成扩散层和阻挡层; 随后进行退火; 退火后，依次去除阻挡层和扩散层; 在高k电介质层上形成第一阻挡层; 在第一阻挡层上依次形成功函数调整层和栅极导体; 并在栅极导体上形成覆盖层。

3. 发明授权

US09222210B2 Drum washing machine and washing method thereof 有权
标题翻译：滚筒洗衣机及其洗涤方法
公开(公告)号：US09222210B2
公开(公告)日：2015-12-29
申请号：US13341270
申请日：2011-12-30
申请人： Jong Ho Lee , Kyu Sun Lee , Bo Kyung Lee , Jung Soo Lim , Byoung Yull Yang , Gyu Dong Jeon
发明人： Jong Ho Lee , Kyu Sun Lee , Bo Kyung Lee , Jung Soo Lim , Byoung Yull Yang , Gyu Dong Jeon
IPC分类号： D06F39/08 , D06F37/26
CPC分类号： D06F39/088 , D06F37/266
摘要： A drum washing machine and washing method are provided. The washing machine directly sprays water to laundry inside the drum through a nozzle unit. The method includes passing some water through a detergent container and directly spraying some water to the inside of a drum through a nozzle unit such that a high concentration of detergent bubbles is generated while applying a force to the laundry. The washing machine includes a cabinet, a tub inside the cabinet, a drum inside the tub, a door on the cabinet, a diaphragm, and a nozzle unit installed so interference with the door is avoided and to receive water directly from an external source to spray water inside the drum during a washing cycle and a rinsing cycle. The nozzle unit adjusts water jetting according to a displacement of an actuator installed inside the nozzle unit.
摘要翻译：提供滚筒洗衣机和洗涤方法。洗衣机通过喷嘴单元将水直接喷射到滚筒内的衣物上。该方法包括使一些水通过洗涤剂容器，并通过喷嘴单元将一些水直接喷射到滚筒的内部，使得在向衣物施加力时产生高浓度的洗涤剂气泡。洗衣机包括机柜，机柜内的桶，桶内的桶，机柜上的门，隔膜和安装的喷嘴单元，从而避免与门的干扰，并直接从外部源接收水在洗涤循环和漂洗循环期间，在滚筒内喷洒水。喷嘴单元根据安装在喷嘴单元内的致动器的位移来调节喷水。

4. 发明授权

US09200058B2 Dual antagonist for TNF-α and IL-21 for preventing and treating autoimmune diseases 有权
标题翻译：用于预防和治疗自身免疫性疾病的TNF-α和IL-21的双重拮抗剂
公开(公告)号：US09200058B2
公开(公告)日：2015-12-01
申请号：US13635874
申请日：2011-03-18
申请人： Young Woo Park , Ki Won Jo , Srok Ho Yoo , Jung Yu , Sun-Ha Yoon , Ji Hyun Park , Eun Jung Song , Jong-Ho Lee , Min Ji Seo , Sun Jung Cho , Mi La Cho , Ho Youn Kim , Mi Kyung Park , Hye Jwa Oh , Jin Sil Park , Yun Ju Woo , Jae Kyeong Byun , Jun Geol Ryu
发明人： Young Woo Park , Ki Won Jo , Srok Ho Yoo , Jung Yu , Sun-Ha Yoon , Ji Hyun Park , Eun Jung Song , Jong-Ho Lee , Min Ji Seo , Sun Jung Cho , Mi La Cho , Ho Youn Kim , Mi Kyung Park , Hye Jwa Oh , Jin Sil Park , Yun Ju Woo , Jae Kyeong Byun , Jun Geol Ryu
IPC分类号： C07K14/715
CPC分类号： C07K14/7151 , C07K14/7155 , C07K2319/00
摘要： The present invention relates to TNFR2-IL21R fusion protein acting as a double-antagonist to TNF-alpha (α) and IL-21. The composition containing the double antagonist to TNF-α and Il-21 (TNFR2-IL21R fusion protein), known as major causes of autoimmune rheumatoid arthritis, one of autoimmune diseases, can reduce the secretion of inflammatory cytokine, increase the secretion of anti-inflammatory cytokine, and suppress the differentiation of osteoclasts better than single proteins such as TNFR2-Fc and IL21R-Fc. The TNFR2-IL21R fusion protein of the present invention has not only excellent treatment effect on arthritis in CIA mouse model not also excellent treatment effect on autoimmune rheumatoid arthritis by increasing the expression of Treg, the immune suppressive cells. Therefore, the TNFR2-IL21R fusion protein of the present invention can be effectively used as an active ingredient for the composition for the prevention and treatment of autoimmune disease.
摘要翻译：本发明涉及作为TNF-α（α）和IL-21的双重拮抗剂的TNFR2-IL21R融合蛋白。含有TNF-α和II-21（TNFR2-IL21R融合蛋白）的双重拮抗剂的组合物，被称为自身免疫性类风湿性关节炎的主要原因（自身免疫性疾病之一）可以减少炎性细胞因子的分泌，炎性细胞因子，并且比单一蛋白如TNFR2-Fc和IL21R-Fc更好地抑制破骨细胞的分化。本发明的TNFR2-IL21R融合蛋白不仅对CIA小鼠模型的关节炎具有优异的治疗作用，而且通过增加免疫抑制细胞Treg的表达，对自身免疫性类风湿性关节炎也不是很好的治疗效果。因此，本发明的TNFR2-IL21R融合蛋白可以有效地用作预防和治疗自身免疫性疾病的组合物的活性成分。

5. 发明授权

US09153696B2 Semiconductor device having tri-gate transistor and method of manufacturing the same 有权
标题翻译：具有三栅晶体管的半导体器件及其制造方法
公开(公告)号：US09153696B2
公开(公告)日：2015-10-06
申请号：US14192074
申请日：2014-02-27
申请人： Tae-Hyun An , Toshiro Nakanishi , Gab-Jin Nam , Jong-Ho Lee
发明人： Tae-Hyun An , Toshiro Nakanishi , Gab-Jin Nam , Jong-Ho Lee
IPC分类号： H01L29/78 , H01L27/092 , H01L21/8238
CPC分类号： H01L29/7856 , H01L21/823821 , H01L21/845 , H01L27/0924 , H01L27/1211
摘要： A semiconductor device includes a substrate including an NMOS region, a fin active region protruding from the substrate in the NMOS region, the fin active region including an upper surface and a sidewall, a gate dielectric layer on the upper surface and the sidewall of the fin active region, a first metal gate electrode on the gate dielectric layer, the first metal gate electrode having a first thickness at the upper surface of the fin active region and a second thickness at the sidewall of the fin active region, and a second metal gate electrode on the first metal gate electrode, the second metal gate electrode having a third thickness at the upper surface of the fin active region and a fourth thickness at the sidewall of the fin active region, wherein the third thickness is less than the fourth thickness.
摘要翻译：半导体器件包括：衬底，其包括NMOS区，在NMOS区中从衬底突出的鳍有源区，鳍有源区包括上表面和侧壁;栅极电介质层，位于鳍的上表面和侧壁上有源区，栅极电介质层上的第一金属栅电极，第一金属栅电极在翅片有源区的上表面具有第一厚度，在鳍有源区的侧壁具有第二厚度，第二金属栅电极所述第二金属栅电极在所述翅片有源区的上表面具有第三厚度，在所述鳍有源区的所述侧壁处具有第四厚度，其中所述第三厚度小于所述第四厚度。

6. 发明授权

US09015347B2 Method and apparatus for transmitting a message as an image 有权
标题翻译：用于发送消息作为图像的方法和装置
公开(公告)号：US09015347B2
公开(公告)日：2015-04-21
申请号：US13438889
申请日：2012-04-04
申请人： Min-kyoung Kang , Sung-wook Ahn , Eun Namgung , Jong-ho Lee
发明人： Min-kyoung Kang , Sung-wook Ahn , Eun Namgung , Jong-ho Lee
IPC分类号： G06F15/16 , H04L12/58
CPC分类号： H04L51/38 , H04L51/066
摘要： A message to be transmitted is converted into an image file. The image file is stored and location information about a location where the image file is stored, is generated. The image file is transmitted to at least one device based on the location information.
摘要翻译：要发送的消息被转换为图像文件。存储图像文件，并生成有关存储图像文件的位置的位置信息。基于位置信息将图像文件发送到至少一个设备。

7. 发明授权

US08841184B2 Dielectric layer for semiconductor device and method of manufacturing the same 有权
标题翻译：用于半导体器件的介电层及其制造方法
公开(公告)号：US08841184B2
公开(公告)日：2014-09-23
申请号：US13661748
申请日：2012-10-26
申请人： Jong-Ho Lee , Nae-In Lee
发明人： Jong-Ho Lee , Nae-In Lee
IPC分类号： H01L21/8238 , H01L29/788 , H01L21/02 , H01L29/51 , H01L21/28 , H01L29/94 , H01L49/02
CPC分类号： H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02192 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7881 , H01L29/94
摘要： A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
摘要翻译：半导体器件包括硅酸盐界面层和覆盖硅酸盐界面层的高k电介质层。高k电介质层包括金属合金氧化物。

8. 发明授权

US08802324B2 Hybrid sealing composite for flat solid oxide fuel cell stack 有权
标题翻译：用于扁平固体氧化物燃料电池堆的混合密封复合材料
公开(公告)号：US08802324B2
公开(公告)日：2014-08-12
申请号：US12438619
申请日：2006-12-08
申请人： Jong-Ho Lee , Hae-Weon Lee , Joo-Sun Kim , Hue-Sup Song , Ji-Won Son , Hae-Ryoung Kim , Sung-Moon Kim , Hyoung-Chul Kim , Hwa-Young Jung
发明人： Jong-Ho Lee , Hae-Weon Lee , Joo-Sun Kim , Hue-Sup Song , Ji-Won Son , Hae-Ryoung Kim , Sung-Moon Kim , Hyoung-Chul Kim , Hwa-Young Jung
IPC分类号： H01M2/08
CPC分类号： H01M8/0282
摘要： The present invention provides a hybrid composite sealant, as a sealing material for a planar type solid oxide fuel cell stack, having a matrix of a glass composition, wherein a surface layer reinforced with platelet reinforcement particles is laminated on either one or both surfaces of an inner layer reinforced with fibrous reinforcement particles. Accordingly, by applying the composite sealant of the present invention to the solid oxide fuel cell stack, excellent gas-tightness of the stack can be obtained even under low coupling pressure, thermal cycling durability can be enhanced due to low coupling strength with a contact surface of an object to be sealed, stack disassembly and maintenance can be facilitated when parts within the stack are disabled, and stack stability as well as stack performance can be maintained under a pressurized operation condition where pressure differentials between the inside and outside of the stack reach to 5 atmospheric pressures (0.5 MPa).
摘要翻译：本发明提供一种作为平面型固体氧化物燃料电池堆的密封材料的混合复合密封剂，其具有玻璃组合物的基体，其中用片状增强颗粒增强的表面层层叠在一个或两个表面上内层用纤维增强颗粒增强。因此，通过将本发明的复合密封剂应用于固体氧化物型燃料电池组，即使在低耦合压力下也能获得优异的气密性，因为与接触面的低耦合强度可以提高热循环耐久性当堆中的部件被禁用时，可以方便地进行堆封拆卸和维护，堆叠的稳定性以及堆叠性能可以在叠层内外的压差达到的加压运行状态下保持至5个大气压（0.5MPa）。

9. 发明申请

US20130169114A1 GENERATING DEVICE USING PIEZOELECTRIC ENERGY HARVESTER 失效
标题翻译：使用压电式能量收集器生成装置
公开(公告)号：US20130169114A1
公开(公告)日：2013-07-04
申请号：US13659875
申请日：2012-10-24
申请人： In Seo KIM , Gui Hyeon MOON , Jong Ho Lee , Young Il JUNG , Sok Hwan HAN
发明人： In Seo KIM
IPC分类号： H02N2/18
CPC分类号： H01L41/113 , H01L41/1134 , H02N2/18
摘要： Provided is a power generating apparatus using piezoelectric elements, which can increase an amount of electricity generated in the piezoelectric elements and can extend the life of the piezoelectric elements. The power generating apparatus includes: a plurality of piezoelectric elements; a main body in which the piezoelectric elements are received and fixed, with spaced apart from one another, so as to protect the piezoelectric elements; a piezoelectric element support reciprocatingly installed in the main body to support the piezoelectric elements such that the piezoelectric elements are deformed by a reciprocating motion of the piezoelectric element support; a driving unit provided in the main body to operate the piezoelectric element support; and a power transmission unit connecting the driving unit to the piezoelectric element support, such that the piezoelectric element support is reciprocated by a driving force of the driving unit.
摘要翻译：提供一种使用压电元件的发电装置，其可以增加在压电元件中产生的电量并且可以延长压电元件的寿命。发电装置包括：多个压电元件; 压电元件彼此间隔开地被接收和固定的主体，以保护压电元件; 压电元件支撑件，其往复安装在主体中以支撑压电元件，使得压电元件通过压电元件支撑件的往复运动而变形; 驱动单元，设置在所述主体中以操作所述压电元件支撑件; 以及将驱动单元连接到压电元件支撑件的动力传递单元，使得压电元件支撑件通过驱动单元的驱动力往复运动。

10. 发明授权

US08461643B2 High-density flash memory cell stack, cell stack string, and fabrication method thereof 有权
标题翻译：高密度闪存单元堆叠，单元堆叠串及其制造方法
公开(公告)号：US08461643B2
公开(公告)日：2013-06-11
申请号：US13123458
申请日：2009-09-24
申请人： Jong-Ho Lee
发明人： Jong-Ho Lee
IPC分类号： H01L27/115
CPC分类号： H01L27/1021 , H01L27/0688 , H01L27/115 , H01L27/11519 , H01L27/11551 , H01L27/11556
摘要： A flash memory cell stack includes a semiconductor substrate; a control electrode formed in a vertical pillar shape on a surface of the semiconductor substrate; an insulating film formed between the control electrode and the semiconductor substrate; a gate stack formed on a side surface of the control electrode; a plurality of first insulating films formed as layers on a side surface of the gate stack; a plurality of second doping semiconductor areas formed as layers on a side surface of the gate stack; and a first doping semiconductor area formed on a portion of side surfaces of the first insulating films and the second doping semiconductor areas and formed on side surfaces facing each other in a first direction. The first insulating films and the second doping semiconductor areas are alternately provided on the side surface of the gate stack.
摘要翻译：闪存单元堆叠包括半导体衬底; 在半导体衬底的表面上形成为垂直柱状的控制电极; 形成在所述控制电极和所述半导体衬底之间的绝缘膜; 形成在所述控制电极的侧表面上的栅堆叠; 多个第一绝缘膜，形成为栅叠层的侧表面上的层; 多个第二掺杂半导体区域，形成为栅叠层的侧表面上的层; 以及第一掺杂半导体区域，形成在第一绝缘膜和第二掺杂半导体区域的一部分侧表面上，并且形成在沿第一方向彼此面对的侧表面上。第一绝缘膜和第二掺杂半导体区交替地设置在栅叠层的侧表面上。

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