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    • 2. 发明授权
    • Phase change memory device and computing system having the same
    • 相变存储器件和具有相同功能的计算系统
    • US08717810B2
    • 2014-05-06
    • US13562650
    • 2012-07-31
    • Joo-young Hwang
    • Joo-young Hwang
    • G11C11/00
    • G11C13/0004G11C13/004G11C13/0069G11C21/00
    • A phase change memory device includes a memory cell array, a register unit and a control unit. The memory cell array includes a plurality of phase change memory cells. The register unit includes a circular queue. The control unit receives a write address and a write data in a write mode, programs the write data in a phase change memory cell corresponding to the write address among the plurality of phase change memory cells, provides the write address and the write data to the register unit, and outputs a write complete signal before a phase of the phase change memory cell is stabilized or after the phase of the phase change memory cell is stabilized based on a logic level of a first result signal received from the register unit. The phase change memory device increases a programming speed.
    • 相变存储器件包括存储单元阵列,寄存器单元和控制单元。 存储单元阵列包括多个相变存储单元。 寄存器单元包括一个循环队列。 控制单元以写入模式接收写入地址和写入数据,对与多个相变存储单元中的写入地址相对应的相变存储单元中的写入数据进行编程,将写入地址和写入数据提供给 并且在相变存储单元的相位稳定之前或者在基于从寄存器单元接收到的第一结果信号的逻辑电平使相变存储单元的相位稳定之后输出写入完成信号。 相变存储器件增加编程速度。