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    • 1. 发明授权
    • Heat-exchanger protection structure
    • 热交换器保护结构
    • US08869925B2
    • 2014-10-28
    • US13438284
    • 2012-04-03
    • Jun Ogawa
    • Jun Ogawa
    • B60K11/04B60R19/52
    • B60K11/04
    • A heat-exchanger protection structure includes a vehicle-body-side member, a heat exchanger unit, and a plurality of attachment pins. The vehicle-body-side member includes an upper member and a lower member, which have a plurality of attachment holes, respectively. The heat exchanger unit includes a heat exchanger. The attachment pins are attachable on and detachable from the heat exchanger, having a fragile portion capable of being broken when external force larger than a predetermined value acts on the attachment pin. The heat exchanger unit is supported on the vehicle-body-side member by the attachment pins being inserted into the attachment holes. At least one of the fragile portions is broken in case of a vehicle crash to protect the heat exchanger against damage.
    • 一种热交换器保护结构,包括车身侧部件,热交换器单元和多个安装销。 车体侧构件包括分别具有多个安装孔的上部构件和下部构件。 热交换器单元包括热交换器。 附接销可附接在热交换器上并可从该热交换器拆卸,具有在大于预定值的外力作用在附接销上时能够断裂的脆弱部分。 热交换器单元通过插入到安装孔中的安装销支撑在车身侧部件上。 在车辆碰撞的情况下,脆弱部分中的至少一个被破坏以保护热交换器免受损坏。
    • 7. 发明授权
    • Elastomer porous material and method of producing the same
    • 弹性体多孔材料及其制造方法
    • US08217090B2
    • 2012-07-10
    • US12745669
    • 2008-12-01
    • Wataru NemotoKazuya TakatoAsuka KoyanagiJun OgawaAtsushi Ikeda
    • Wataru NemotoKazuya TakatoAsuka KoyanagiJun OgawaAtsushi Ikeda
    • C08J5/02C08J9/00
    • C08J9/28B29C44/3403B29C67/202C08J2201/0504C08J2383/04Y10T428/26
    • In the elastomer porous material of the invention, when cells in a first observation region of a first cross section are observed at a certain magnification, cells having a shape factor SF2, which indicates the remoteness from complete roundness and is represented by the following formula: SF ⁢ ⁢ 2 = P 2 4 ⁢ π ⁢ ⁢ A × 100 (wherein A represents the area of each cell, and P represents the perimeter length thereof), of 130 or less account for 80% or more of all cells in the first observation region, and, when cells in a second observation region of a second cross section orthogonal to the first cross section are observed at a certain magnification, cells having a shape factor SF2, which indicates the remoteness from complete roundness and is represented by the same formula (wherein A represents the area of each cell, and P represents the perimeter length thereof), of 130 or less account for 80% or more of all cells in the second observation region.
    • 在本发明的弹性体多孔材料中,当以一定的倍率观察第一截面的第一观察区域的细胞时,具有形状因子SF2的细胞,其表示从完全圆度偏离并由下式表示: SF ud 2 = P 2 4&pgr; ⁢A×100(其中A表示每个单元的面积,P表示其周长)为130以下,占第一观察区域的全部单元的80%以上,并且当第二观测区域中的单元 在一定的放大倍数下观察与第一截面正交的第二截面的观察区域,具有形状因子SF2的单元,其表示从完全圆度偏离并由相同的式(其中A表示每个单元的面积 ,P表示其周长)为130以下,占第二观察区域的全部细胞的80%以上。
    • 8. 发明授权
    • Film formation method and apparatus for semiconductor process
    • 用于半导体工艺的成膜方法和装置
    • US08168270B2
    • 2012-05-01
    • US11896752
    • 2007-09-05
    • Kazuhide HasebeYoshihiro IshidaTakehiko FujitaJun OgawaShigeru Nakajima
    • Kazuhide HasebeYoshihiro IshidaTakehiko FujitaJun OgawaShigeru Nakajima
    • C23C16/513
    • C23C16/45525C23C16/45527C23C16/45542C23C16/45544
    • An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.
    • 在目标基板上通过CVD形成氧化膜,在选择性地供给包括含有膜源元素而不含氨基的源气体的第一工艺气体的工艺领域中,包含氧化气体的第二工艺气体和 包括初步处理气体的第三工艺气体。 第一步骤包括供给由激励机构激励的第三处理气体的激发期,由此通过预处理气体基团对目标基板进行预处理。 第二步进行第一处理气体的供给,从而将膜源元件吸附在目标基板上。 第三步骤包括供给由激励机构激励的第二处理气体的激励周期,从而通过氧化气体基团氧化吸附在目标基板上的膜源元件。