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1. 发明授权

US09299683B2 Abutment structure of semiconductor cell 有权
标题翻译：半导体电池基台结构
公开(公告)号：US09299683B2
公开(公告)日：2016-03-29
申请号：US13675540
申请日：2012-11-13
申请人： Jye-Yuan Lee
发明人： Yi-Fon Chen , Yu-Cheng Yang , Jye-Yuan Lee
IPC分类号： H01L23/52 , H01L25/00 , H01L27/02 , H01L27/118
CPC分类号： H01L25/00 , H01L27/0207 , H01L27/11807 , H01L2924/0002 , H01L2924/00
摘要： An abutment structure comprises a power rail, a ground rail parallel to the power rail, first cells and second cells. An area is defined between the power and the ground rails. A portion of each first and second cell overlaps the power and the ground rails, and another portion thereof is within the area. The first cells are within the abutment structure with original patterns thereof. The second cells respectively has an original pattern and a base pattern being a flip pattern of the original pattern, and are within the area with alternate of the original and the base patterns. The first and the second cells are within the area alternately without overlapping. Alternatively, the first and the second cells may also be within different areas, and the second cells are within different areas respectively with the base pattern and a flip pattern of the base pattern thereof.
摘要翻译：邻接结构包括电力轨道，平行于电力轨道的接地轨道，第一单元和第二单元。在电源和接地导轨之间定义一个区域。每个第一和第二电池的一部分与功率和接地导轨重叠，并且其另一部分在该区域内。第一个细胞位于具有其原始图案的邻接结构内。第二单元分别具有原始图案，并且基本图案是原始图案的翻转图案，并且在原始图案和基本图案的交替区域内。第一和第二电池在该区域内交替地不重叠。或者，第一和第二单元也可以在不同的区域内，并且第二单元分别在不同的区域内具有基本图案和其基本图案的翻转图案。

2. 发明申请

US20120049948A1 Abutment structure of semiconductor cell 有权
标题翻译：半导体电池基台结构
公开(公告)号：US20120049948A1
公开(公告)日：2012-03-01
申请号：US13064160
申请日：2011-03-09
申请人： Yi-Fon Chen , Yu-Cheng Yang , Jye-Yuan Lee
发明人： Yi-Fon Chen , Yu-Cheng Yang , Jye-Yuan Lee
IPC分类号： H01L25/00
CPC分类号： H01L25/00 , H01L27/0207 , H01L27/11807 , H01L2924/0002 , H01L2924/00
摘要： An abutment structure comprises a power rail, a ground rail parallel to the power rail, first cells and second cells. An area is defined between the power and the ground rails. A portion of each first and second cell overlaps the power and the ground rails, and another portion thereof is within the area. The first cells are within the abutment structure with original patterns thereof. The second cells respectively has an original pattern and a base pattern being a flip pattern of the original pattern, and are within the area with alternate of the original and the base patterns. The first and the second cells are within the area alternately without overlapping. Alternatively, the first and the second cells may also be within different areas, and the second cells are within different areas respectively with the base pattern and a flip pattern of the base pattern thereof.
摘要翻译：邻接结构包括电力轨道，平行于电力轨道的接地轨道，第一单元和第二单元。在电源和接地导轨之间定义一个区域。每个第一和第二电池的一部分与功率和接地导轨重叠，并且其另一部分在该区域内。第一个细胞位于具有其原始图案的邻接结构内。第二单元分别具有原始图案和基本图案是原始图案的翻转图案，并且在原始图案和基本图案的交替的区域内。第一和第二电池在该区域内交替地不重叠。或者，第一和第二单元也可以在不同的区域内，并且第二单元分别在不同的区域内具有基本图案和其基本图案的翻转图案。

3. 发明申请

US20130134484A1 ABUTMENT STRUCTURE OF SEMICONDUCTOR CELL 有权
标题翻译：半导体细胞的结构
公开(公告)号：US20130134484A1
公开(公告)日：2013-05-30
申请号：US13675540
申请日：2012-11-13
申请人： Yi-Fon CHEN , Yu-Cheng YANG , Jye-Yuan LEE
发明人： Yi-Fon CHEN , Yu-Cheng YANG , Jye-Yuan LEE
IPC分类号： H01L25/00
CPC分类号： H01L25/00 , H01L27/0207 , H01L27/11807 , H01L2924/0002 , H01L2924/00
摘要： An abutment structure comprises a power rail, a ground rail parallel to the power rail, first cells and second cells. An area is defined between the power and the ground rails. A portion of each first and second cell overlaps the power and the ground rails, and another portion thereof is within the area. The first cells are within the abutment structure with original patterns thereof. The second cells respectively has an original pattern and a base pattern being a flip pattern of the original pattern, and are within the area with alternate of the original and the base patterns. The first and the second cells are within the area alternately without overlapping. Alternatively, the first and the second cells may also be within different areas, and the second cells are within different areas respectively with the base pattern and a flip pattern of the base pattern thereof.
摘要翻译：邻接结构包括电力轨道，平行于电力轨道的接地轨道，第一单元和第二单元。在电源和接地导轨之间定义一个区域。每个第一和第二电池的一部分与功率和接地导轨重叠，并且其另一部分在该区域内。第一个细胞位于具有其原始图案的邻接结构内。第二单元分别具有原始图案和基本图案是原始图案的翻转图案，并且在原始图案和基本图案的交替的区域内。第一和第二电池在该区域内交替地不重叠。或者，第一和第二单元也可以在不同的区域内，并且第二单元分别在不同的区域内具有基本图案和其基本图案的翻转图案。

4. 发明授权

US08310302B2 Abutment structure of semiconductor cell 有权
公开(公告)号：US08310302B2
公开(公告)日：2012-11-13
申请号：US13064160
申请日：2011-03-09
申请人： Yi-Fon Chen , Yu-Cheng Yang , Jye-Yuan Lee
发明人： Yi-Fon Chen , Yu-Cheng Yang , Jye-Yuan Lee
IPC分类号： H01L25/00
CPC分类号： H01L25/00 , H01L27/0207 , H01L27/11807 , H01L2924/0002 , H01L2924/00
摘要： An abutment structure comprises a power rail, a ground rail parallel to the power rail, first cells and second cells. An area is defined between the power and the ground rails. A portion of each first and second cell overlaps the power and the ground rails, and another portion thereof is within the area. The first cells are within the abutment structure with original patterns thereof. The second cells respectively has an original pattern and a base pattern being a flip pattern of the original pattern, and are within the area with alternate of the original and the base patterns. The first and the second cells are within the area alternately without overlapping. Alternatively, the first and the second cells may also be within different areas, and the second cells are within different areas respectively with the base pattern and a flip pattern of the base pattern thereof.

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