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    • 2. 发明申请
    • Magnetic non-volatile memory element
    • 磁性非易失性存储元件
    • US20050207263A1
    • 2005-09-22
    • US10519895
    • 2003-07-02
    • Katsumi OkayamaKaoru KobayashiMakoto Motoyoshi
    • Katsumi OkayamaKaoru KobayashiMakoto Motoyoshi
    • G11C11/15G11C8/02G11C11/16H01L21/76H01L21/8246H01L27/105H01L27/22H01L43/02H01L43/08
    • G11C11/16H01L27/228Y10S977/935
    • A non-volatile magnetic memory device is proposed, which provides sufficient magnetic shielding performance for external magnetic fields. A first magnetic shield layer 60a and a second magnetic shield layer 60b, both made of a soft magnetic metal, are formed respectively on the bottom surface of the transistor section 20, which is the mounting side of the MRAM device 10, and on the top surface of the bit line 50, which is opposite to the bottom surface of the mounting side of the MRAM device 10. On the second magnetic shield layer 60a, a passivation film 70 is formed. The magnetic flux penetrated from the external magnetic field, is suppressed below the inversion strength of the MRAM device 10, thereby improving reliability. Moreover, by using soft magnetic metal as the magnetic shield layers 60a, 60b, the magnetic shield layers can be formed by the sputtering technique, particularly composing elements can be partly shared as elements of the targets to be used for forming various layers composing the MRAM device 10 by the sputtering technique, thereby enabling to form various layers of the MRAM device 10 in a single sputtering chamber efficiently.
    • 提出了一种非易失性磁存储器件,为外部磁场提供了足够的磁屏蔽性能。 分别在作为MRAM器件10的安装侧的晶体管部分20的底表面上分别形成由软磁性金属制成的第一磁屏蔽层60a和第二磁屏蔽层60b,并且在 位线50的与MRAM装置10的安装侧的底面相反的顶面。 在第二磁屏蔽层60a上形成钝化膜70。 从外部磁场穿透的磁通被抑制在MRAM装置10的反转强度以下,从而提高可靠性。 此外,通过使用软磁性金属作为磁屏蔽层60a,60b,可以通过溅射技术形成磁屏蔽层,特别地,组成元件可以部分地作为用于形成构成各种层的靶的元素 MRAM器件10通过溅射技术,从而能够有效地在单个溅射室中形成MRAM器件10的各个层。