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1. 发明授权

US08339840B2 Storage element and memory 有权
标题翻译：存储元件和存储器
公开(公告)号：US08339840B2
公开(公告)日：2012-12-25
申请号：US12668925
申请日：2008-06-30
申请人： Masanori Hosomi , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
发明人： Masanori Hosomi , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , H01L27/228
摘要： A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 16 interposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.
摘要翻译：提供了能够在不增加写入电流的情况下提高热稳定性的存储器。存储器被配置为包括：存储元件，其具有根据磁性物质的磁化状态保存信息的存储层，并且其中在存储层上设置有中间层16的磁化固定层，中间层层由绝缘体形成，通过在层叠方向注入电子自旋极化来改变存储层的磁化方向，使得信息被记录在存储层中，并且从绝缘层向存储层施加失真其存在于存储层周围并且具有比存储层更小的热膨胀系数。一种用于提供在存储元件的层叠方向上流动的电流的布线。

2. 发明授权

US08194443B2 Memory device and memory 有权
标题翻译：内存设备和内存
公开(公告)号：US08194443B2
公开(公告)日：2012-06-05
申请号：US12796802
申请日：2010-06-09
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3277 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.
摘要翻译：存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

3. 发明申请

US20100328993A1 RECORDING METHOD OF NONVOLATILE MEMORY AND NONVOLATILE MEMORY 失效
标题翻译：非易失性存储器和非易失性存储器的记录方法
公开(公告)号：US20100328993A1
公开(公告)日：2010-12-30
申请号：US12821886
申请日：2010-06-23
申请人： Hiroyuki Ohmori , Tetsuya Yamamoto , Masanori Hosomi , Yutaka Higo , Kazutaka Yamane , Kazuhiro Bessho , Hiroshi Kano , Minoru Ikarashi , Yuki Oishi , Shinichiro Kusunoki
发明人： Hiroyuki Ohmori , Tetsuya Yamamoto , Masanori Hosomi , Yutaka Higo , Kazutaka Yamane , Kazuhiro Bessho , Hiroshi Kano , Minoru Ikarashi , Yuki Oishi , Shinichiro Kusunoki
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C13/0069 , G11C2013/0073 , G11C2013/0076 , G11C2013/0078 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/79
摘要： A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.
摘要翻译：一种非易失性存储器的记录方法，包括：电气地执行具有连接到用于信息记录的电源的电阻变化的信息存储装置的信息的记录的记录电路，包括以下步骤：以低电阻状态记录信息在信息存储装置的记录电路的输出阻抗大于信息存储装置的低电阻状态下的电阻值的条件下，记录电路; 并且在信息存储装置的记录电路的输出阻抗小于信息存储装置的高电阻状态下的电阻值的条件下，通过记录电路将信息记录在高电阻状态。

4. 发明申请

US20100135069A1 RESISTANCE VARIABLE MEMORY DEVICE 失效
标题翻译：电阻可变存储器件
公开(公告)号：US20100135069A1
公开(公告)日：2010-06-03
申请号：US12629671
申请日：2009-12-02
申请人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
发明人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
IPC分类号： G11C11/16
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.
摘要翻译：提供了电阻可变存储器件，并且包括通过利用基于注入电流的自旋转移效应来写入数据的电阻变化存储单元。存储器件还包括产生多个写入脉冲的组合脉冲的驱动电路和限定写入脉冲之间的电平的偏移脉冲，并且在写入时将组合的脉冲提供给存储器单元。

5. 发明授权

US06992342B2 Magnetic memory device having a non-volatile magnetic section and manufacturing thereof 失效
标题翻译：具有非易失磁性部分的磁记录装置及其制造方法
公开(公告)号：US06992342B2
公开(公告)日：2006-01-31
申请号：US10612842
申请日：2003-07-02
申请人： Makoto Motoyoshi , Minoru Ikarashi
发明人： Makoto Motoyoshi , Minoru Ikarashi
IPC分类号： H01L29/76
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/08
摘要： A magnetic memory device, in which a tunnel magneto resistance element that establishes a connection between a write word line (first interconnection) and a bit line (second interconnection) is provided within a region in which the write word line and the bit line cross in a grade-separated manner. The magnetic memory device comprises a through hole that is provided in such a manner that is insulated from the write word line and also extending through the write word line so as to establish a connection between the tunnel magneto resistance element and a second landing pad (interconnection layer) lower than the write word line, and a contact that is formed in the through hole through a side wall barrier film so as to establish a connection between the tunnel magneto resistance element and the second landing pad.
摘要翻译：一种磁存储器件，其中在写入字线和位线交叉的区域内提供在写入字线（第一互连）和位线（第二互连）之间建立连接的隧道磁阻元件一个分级的方式。磁存储器件包括通孔，该通孔以与写字线绝缘的方式设置，并且还延伸穿过写字线，以便建立隧道磁阻元件与第二着地焊盘之间的连接（互连层），以及通过侧壁阻挡膜形成在通孔中的接触件，以便建立隧道磁阻元件和第二着陆焊盘之间的连接。

6. 发明申请

US20050116255A1 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US20050116255A1
公开(公告)日：2005-06-02
申请号：US10506752
申请日：2003-12-19
申请人： Yoshihiro Kato , Katsumi Okayama , Kaoru Kobayashi , Tetsuya yamamoto , Minoru Ikarashi
发明人： Yoshihiro Kato , Katsumi Okayama , Kaoru Kobayashi , Tetsuya yamamoto , Minoru Ikarashi
IPC分类号： H01L23/00 , H01L21/8246 , H01L23/552 , H01L27/105 , H01L27/22 , H01L43/08 , H01L31/109
CPC分类号： H01L27/222 , B82Y10/00 , H01L23/552 , H01L2224/16 , H01L2924/01004 , H01L2924/01019 , H01L2924/01025 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/3025 , H01L2924/00
摘要： A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field. The MRAM elements 30 which are shielded by magnetic shield layers 33, 34 are placed at an intermediate region 41 avoiding an edge region 43 and a center region 42 of the magnetic shield layers 33, 34 so that the MRAM element is secured to operate normally without being affected by the internal leakage magnetic field avoiding the edge region 43 where the magnetic shield effect is reduced by the exterior magnetic field, and avoiding the central region 42 where the internal leakage magnetic field is large
摘要翻译：提出了一种存储器件，其能够保证MRAM元件的操作不被大的外部磁场屏蔽，而不受内部泄漏磁场的影响。由磁屏蔽层33,34屏蔽的MRAM元件30被放置在中间区域41处，避免了磁屏蔽层33,34的边缘区域43和中心区域42，使得MRAM元件被固定以正常地操作而没有受到内部泄漏磁场的影响，避免了由外部磁场减小磁屏蔽效应的边缘区域43，并且避免了内部泄漏磁场较大的中心区域42

7. 发明申请

US20120037873A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20120037873A1
公开(公告)日：2012-02-16
申请号：US13197814
申请日：2011-08-04
申请人： Minoru Ikarashi , Katsuhisa Aratani
发明人： Minoru Ikarashi , Katsuhisa Aratani
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144
摘要： A memory device includes: first and second electrodes; a semiconductor layer of a first conduction type provided on the first electrode side; a solid electrolyte layer containing movable ions and provided on the second electrode side; and an amorphous semiconductor layer of a second conduction type which is provided between the semiconductor layer and the solid electrolyte layer so as to be in contact with the solid electrolyte layer and, at the time of application of voltage to the first and second electrodes, reversibly changes to the first conduction type.
摘要翻译：存储器件包括：第一和第二电极; 设置在第一电极侧的第一导电类型的半导体层; 含有可动离子的固体电解质层，设置在第二电极侧; 以及设置在半导体层和固体电解质层之间以与固体电解质层接触的第二导电类型的非晶半导体层，并且在向第一和第二电极施加电压时可逆地改变为第一导电类型。

8. 发明申请

US20100328992A1 MEMORY 有权
标题翻译：记忆
公开(公告)号：US20100328992A1
公开(公告)日：2010-12-30
申请号：US12817327
申请日：2010-06-17
申请人： Hiroshi Kano , Yutaka Higo , Tetsuya Yamamoto , Hiroyuki Ohmori , Masanori Hosomi , Shinichiro Kusunoki , Yuki Oishi , Kazutaka Yamane , Kazuhiro Bessho , Minoru Ikarashi
发明人： Hiroshi Kano , Yutaka Higo , Tetsuya Yamamoto , Hiroyuki Ohmori , Masanori Hosomi , Shinichiro Kusunoki , Yuki Oishi , Kazutaka Yamane , Kazuhiro Bessho , Minoru Ikarashi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/005 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C17/16 , G11C29/50 , G11C2029/4402 , Y10S977/935
摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.
摘要翻译：存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。

9. 发明申请

US20100314673A1 MEMORY DEVICE AND MEMORY 有权
标题翻译：存储器和存储器
公开(公告)号：US20100314673A1
公开(公告)日：2010-12-16
申请号：US12796802
申请日：2010-06-09
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
IPC分类号： H01L27/115
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3277 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.
摘要翻译：存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

10. 发明申请

US20100135068A1 RESISTANCE-CHANGE MEMORY DEVICE 失效
标题翻译：电阻变化存储器件
公开(公告)号：US20100135068A1
公开(公告)日：2010-06-03
申请号：US12629660
申请日：2009-12-02
申请人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
发明人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
IPC分类号： G11C11/02 , H01L43/00
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.
摘要翻译：提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。

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