专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08957357B2 Solid-state imaging device, manufacturing method of the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US08957357B2
公开(公告)日：2015-02-17
申请号：US12728514
申请日：2010-03-22
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H01L27/146 , H01L31/10 , H01L31/103
CPC分类号： H01L27/14605 , H01L27/14609 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/103
摘要： A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.
摘要翻译：固态成像装置包括多个光电二极管，其形成在单元像素的光电二极管区域中，其间没有元件分离区域，并且其中pn结区域的杂质浓度彼此不同。

2. 发明授权

US08638382B2 Solid-state imaging device and electronic apparatus 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US08638382B2
公开(公告)日：2014-01-28
申请号：US13609596
申请日：2012-09-11
申请人： Kazuichiro Itonaga , Shizunori Matsumoto
发明人： Kazuichiro Itonaga , Shizunori Matsumoto
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00 , H01L29/76 , H01L31/062 , H01L27/14 , H01L27/146
CPC分类号： H01L27/14812 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14647 , H01L27/14831 , H04N5/357 , H04N5/374 , H04N5/3745 , H04N5/37457 , H04N5/378 , H04N9/045
摘要： A solid-state imaging device with a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
摘要翻译：一种具有布局的固态成像装置，其中一个共享单元在水平和垂直方向上分别包括2像素×4×n个像素（其中，n为正整数）的光电二极管阵列。

3. 发明申请

US20120217606A1 METHOD OF MANUFACTURING SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像元件，固态成像元件和电子设备的制造方法
公开(公告)号：US20120217606A1
公开(公告)日：2012-08-30
申请号：US13399113
申请日：2012-02-17
申请人： Kazuichiro ITONAGA
发明人： Kazuichiro ITONAGA
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/18
CPC分类号： H04N5/369 , H01L27/14618 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a solid-state imaging element includes: manufacturing an element chip in which photoelectric conversion units are arranged on a main surface side; preparing a base configured using a material with an expansion coefficient greater than the element chip and having an opening of which the periphery of the opening is shaped as a flat surface; expanding the base by heating, mounting the element chip on the flat surface of the base in a state where the opening of the base is covered; and three-dimensionally curving a portion corresponding to the opening in the element chip by cooling and contracting the base in a state where the element chip is fixed to the flat surface of the expanded base.
摘要翻译：制造固态成像元件的方法包括：制造其中光电转换单元布置在主表面侧上的元件芯片; 准备使用具有大于元件芯片的膨胀系数的材料构成的基部，并且开口的开口被形成为平坦表面; 通过加热来膨胀基座，在基部的开口被覆盖的状态下将元件芯片安装在基座的平坦表面上; 并且在元件芯片被固定到扩展基座的平坦表面的状态下通过冷却和收缩基座来三维地弯曲与元件芯片中的开口相对应的部分。

4. 发明授权

US08169523B2 Solid-state imaging device and electronic apparatus 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US08169523B2
公开(公告)日：2012-05-01
申请号：US12491740
申请日：2009-06-25
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H04N3/14 , H04N5/335 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/14641
摘要： A solid-state imaging device includes: a photoelectric conversion portion; a floating diffusion region; a transfer gate electrode made of an n-type semiconductor; a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode through an insulating film; and a sidewall made of an insulating layer formed on the floating diffusion region side of the transfer gate electrode.
摘要翻译：固态成像装置包括：光电转换部; 浮动扩散区; 由n型半导体制成的传输栅电极; 通过绝缘膜形成在所述传输栅电极的光电转换部分侧上的由n型半导体制成的侧壁; 以及由形成在传输栅电极的浮动扩散区侧上的绝缘层制成的侧壁。

5. 发明申请

US20100245637A1 Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US20100245637A1
公开(公告)日：2010-09-30
申请号：US12656805
申请日：2010-02-17
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H04N5/2254 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643 , H01L27/14685
摘要： A solid-state imaging device includes: an on-chip color filter having color filter components formed to correspond to pixels; light-shielding members each formed at the boundary of adjacent color filter components; and lenses concave toward a light incident direction, each formed directly below a corresponding one of the color filter components by self-alignment with the light-shielding members as a mask.
摘要翻译：固态成像装置包括：具有形成为对应于像素的滤色器部件的片上滤色器; 遮光部件各自形成在相邻滤色器部件的边界处; 以及朝向光入射方向凹入的透镜，每个透镜通过与遮光构件的自对准作为掩模直接形成在相应的一个滤色器组件的下方。

6. 发明申请

US20090322919A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US20090322919A1
公开(公告)日：2009-12-31
申请号：US12491740
申请日：2009-06-25
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/14641
摘要： A solid-state imaging device includes: a photoelectric conversion portion; a floating diffusion region; a transfer gate electrode made of an n-type semiconductor; a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode through an insulating film; and a sidewall made of an insulating layer formed on the floating diffusion region side of the transfer gate electrode.
摘要翻译：固态成像装置包括：光电转换部; 浮动扩散区; 由n型半导体制成的传输栅电极; 通过绝缘膜形成在所述传输栅电极的光电转换部分侧上的由n型半导体制成的侧壁; 以及由形成在传输栅电极的浮动扩散区侧上的绝缘层制成的侧壁。

7. 发明申请

US20090284630A1 SOLID-STATE IMAGING DEVICES AND ELECTRONIC DEVICES 失效
标题翻译：固态成像装置和电子装置
公开(公告)号：US20090284630A1
公开(公告)日：2009-11-19
申请号：US12464557
申请日：2009-05-12
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14645
摘要： A solid-state imaging device is disclosed. The solid-state image device has pixels in which an absorption film that absorbs short wavelength-side light is formed on a photoelectric conversion portion for desired color light through an insulation film.
摘要翻译：公开了一种固态成像装置。固态图像装置具有像素，其中通过绝缘膜在光电转换部分上形成吸收短波长侧光的吸收膜以获得所需的彩色光。

8. 发明申请

US20060275990A1 Semiconductor device and method of producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060275990A1
公开(公告)日：2006-12-07
申请号：US11432264
申请日：2006-05-11
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H01L21/00 , H01L21/336 , H01L23/58
CPC分类号： H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7838 , H04N5/3741 , Y10S438/945
摘要： A semiconductor device suitable for a source-follower circuit, provided with a gate electrode formed on a semiconductor substrate via a gate insulation film, a first conductivity type layer formed in the semiconductor substrate under a conductive portion of the gate electrode and containing a first conductivity type impurity, first source/drain regions of the first conductivity type impurity formed in the semiconductor substrate and extended from edge portions of the gate electrode, and second source/drain regions having a first conductivity type impurity concentration lower than that in the first source/drain regions and formed adjoining the gate insulation film and the first source/drain regions in the semiconductor substrate so as to overlap portions of the conductive portion of the gate electrode.
摘要翻译：一种适用于源极跟随器电路的半导体器件，其设置有通过栅极绝缘膜形成在半导体衬底上的栅极电极，形成在半导体衬底中的栅极电极的导电部分下方并且包含第一导电性的第一导电型层形成在半导体衬底中并从栅电极的边缘部分延伸的第一导电类型杂质的第一源极/漏极区域，以及具有比第一源极/漏极区域低的第一导电类型杂质浓度的第二源极/ 漏区，并且与半导体衬底中的栅极绝缘膜和第一源极/漏极区相邻地形成，以与栅电极的导电部分重叠。

9. 发明授权

US06800512B1 Method of forming insulating film and method of fabricating semiconductor device 失效
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US06800512B1
公开(公告)日：2004-10-05
申请号：US09662004
申请日：2000-09-14
申请人： Kazuichiro Itonaga , Akihiro Yamamoto , Hiroaki Nakaoka , Isao Miyanaga , Yoshinao Harada
发明人： Kazuichiro Itonaga , Akihiro Yamamoto , Hiroaki Nakaoka , Isao Miyanaga , Yoshinao Harada
IPC分类号： H01L2100
CPC分类号： H01L21/31654 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/31662 , H01L21/32 , H01L21/32105 , H01L21/76224 , H01L21/823842 , H01L21/823857
摘要： With keeping an atmosphere including oxygen within a chamber and with a wafer kept at a low temperature, plasma generated within the chamber is biased toward the wafer, and the wafer is subjected to the plasma. A semiconductor layer exposed on the wafer is oxidized into an oxide film. Thus, an oxide film can be formed even at room temperature differently from thermal oxidation. This oxidation is applicable to recovery of an implantation protection insulating film having been etched in cleaning a photoresist film, relaxation of a step formed between polysilicon films, relaxation of a step formed within trench and the like. Also, before removing a photoresist film used for forming a gate electrode including a metal, a contamination protection film can be formed by this oxidation with the photoresist film kept.
摘要翻译：通过在室内保持包括氧的气氛，并且将晶片保持在低温下，在室内产生的等离子体朝向晶片偏置，并且晶片经受等离子体。暴露在晶片上的半导体层被氧化成氧化膜。因此，即使在室温下也可以形成与热氧化不同的氧化膜。该氧化适用于在清洁光致抗蚀剂膜时蚀刻的注入保护绝缘膜的恢复，多晶硅膜之间形成的台阶的松弛，沟槽内形成的台阶的松弛等。此外，在去除用于形成包括金属的栅电极的光致抗蚀剂膜之前，可以通过保持光致抗蚀剂膜的这种氧化来形成污染保护膜。

10. 发明授权

US09343496B2 Solid-state imaging device, production method thereof and camera 有权
标题翻译：固态成像装置及其制作方法及相机
公开(公告)号：US09343496B2
公开(公告)日：2016-05-17
申请号：US11519663
申请日：2006-09-11
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689
摘要： A solid-state imaging device and the production method capable of effectively suppressing color mixture between sensor portions, and a camera provided with the solid-state imaging device are provided: wherein the solid-state imaging device includes a first conductivity type semiconductor substrate, a second conductivity type epitaxial layer formed on the first conductivity type semiconductor substrate, a first conductivity type sensor portion formed in the epitaxial layer, and an active element formed in the epitaxial layer and for reading charges obtained by photoelectric conversion at the sensor portion.
摘要翻译：提供了能够有效抑制传感器部分之间的混合物的固态成像装置和设置有固态成像装置的照相机的制造方法，其中固态成像装置包括第一导电型半导体衬底，形成在第一导电型半导体衬底上的第二导电类型外延层，形成在外延层中的第一导电类型传感器部分和形成在外延层中的用于在传感器部分读取通过光电转换获得的电荷的有源元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式