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1. 发明申请

US20170002127A1 PROCESS FOR THE NANOSTRUCTURING OF A BLOCK COPOLYMER FILM USING A NONSTRUCTURED BLOCK COPOLYMER BASED ON STYRENE AND ON METHYL METHACRYLATE, AND NANOSTRUCTURED BLOCK COPOLYMER FILM 有权
标题翻译：使用基于苯乙烯和甲基丙烯酸甲酯的非构造嵌段共聚物和嵌段共聚物膜的嵌段共聚物膜的纳米结构方法
公开(公告)号：US20170002127A1
公开(公告)日：2017-01-05
申请号：US15105245
申请日：2014-12-15
申请人： ARKEMA FRANCE
发明人： Christophe NAVARRO , Celia NICOLET , Xavier CHEVALIER
IPC分类号： C08F297/02 , B82Y40/00 , B82Y30/00 , C09D153/00 , G03F7/00
CPC分类号： C08F297/026 , B82Y30/00 , B82Y40/00 , C08J5/18 , C08J2353/00 , C09D153/00 , G03F7/0002 , Y10S438/945 , Y10S524/905 , Y10S525/915
摘要： The invention relates to a block copolymer film nanostructured in nanodomains at a predetermined temperature, obtained from a basic block copolymer which is nonstructured at said predetermined temperature, and at least one block of which comprises styrene and at least another block of which comprises methyl methacrylate. The block copolymer film is useful for forming nano-lithography masks.
摘要翻译：本发明涉及在预定温度下纳米结构域纳米结构化的嵌段共聚物膜，其由在所述预定温度下非结构化的碱性嵌段共聚物获得，并且其至少一个嵌段包含苯乙烯，并且其至少另一个嵌段包含甲基丙烯酸甲酯。嵌段共聚物膜可用于形成纳米光刻掩模。

2. 发明申请

US20150228824A1 FORMATION OF METAL NANOSPHERES AND MICROSPHERES 审中-公开
标题翻译：形成金属纳米微粒和微球
公开(公告)号：US20150228824A1
公开(公告)日：2015-08-13
申请号：US14691326
申请日：2015-04-20
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： AUGUSTIN J. HONG , WOO-SHIK JUNG , JEEHWAN KIM , JAE-WOONG NAH , DEVENDRA K. SADANA
IPC分类号： H01L31/0352 , H01L31/0376 , H01L31/0236 , H01L31/075 , H01L31/0224
CPC分类号： H01L31/035227 , C03C15/00 , C03C17/06 , C03C2218/34 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/0376 , H01L31/0392 , H01L31/03921 , H01L31/03923 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/541 , Y02E10/548 , Y10S438/945 , Y10S977/773 , Y10S977/779 , Y10T428/12014 , Y10T428/12069 , Y10T428/12076 , Y10T428/24479 , Y10T428/24488 , Y10T428/2982
摘要： Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.
摘要翻译：半球和球形成并用于多种应用。半球用于形成具有上表面和下表面的基底。上表面包括具有附接到下表面的基部的柱的峰。峰在上表面具有通过半球形金属结构的阵列定义的密度，其在蚀刻期间用作掩模，以在形成支柱期间将基底材料移除到下表面。支柱是致密和均匀的，并且包括微米级的平均直径。球形成为独立的金属球体或纳米颗粒用于其他应用。

3. 发明申请

US20140284306A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN 审中-公开
标题翻译：制造多孔结构的方法和形成图案的方法
公开(公告)号：US20140284306A1
公开(公告)日：2014-09-25
申请号：US14295657
申请日：2014-06-04
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Koji ASAKAWA , Toshiro HIRAOKA , Yoshihiro AKASAKA , Yasuyuki HOTTA
IPC分类号： C08J9/26
CPC分类号： C08J9/26 , B82Y10/00 , B82Y30/00 , C03C17/007 , C03C2217/425 , C03C2217/479 , C03C2218/33 , C08J2333/12 , C08J2383/16 , C23F1/30 , G03F7/0002 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/0029 , H01G11/30 , H01G11/56 , H01J9/02 , H01J9/025 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/0337 , H01L21/31695 , H01M2/145 , H01M2/1653 , H01M4/131 , H01M4/133 , H01M4/8605 , H01M4/96 , H01M8/0234 , H01M8/0245 , H01M8/026 , H01M8/1011 , H01M10/0525 , Y02E60/13 , Y02E60/523 , Y02P70/56 , Y10S438/945 , Y10S438/947 , Y10S977/90 , Y10T428/24149
摘要： A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
摘要翻译：图案形成材料含有嵌段共聚物或接枝共聚物，并形成具有微聚合物相的结构，其中，关于构成嵌段共聚物或接枝共聚物的聚合物链中的至少两个聚合物链，N /（Nc- 否）构成各聚合物链的单体单元的值为1.4以上，其中N表示单体单元中的总原子数，Nc表示单体单元中的碳原子数，No表示单体单元中的氧原子数。

4. 发明授权

US08232214B2 Liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08232214B2
公开(公告)日：2012-07-31
申请号：US13276025
申请日：2011-10-18
申请人： Gee-Sung Chae , Yong-Sup Hwang
发明人： Gee-Sung Chae , Yong-Sup Hwang
IPC分类号： H01L21/00
CPC分类号： H01L29/4908 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/665 , Y10S438/945
摘要： A liquid crystal display device includes a plurality of gate lines and data lines crossing each other to define a plurality of pixel regions, a plurality of thin film transistors, each disposed in one of the pixel regions, and a plurality of pixel electrodes, each disposed in one of the pixel regions, wherein the thin film transistor includes at least one Ti layer.
摘要翻译：液晶显示装置包括多个栅极线和数据线，彼此交叉以限定多个像素区域，多个薄膜晶体管，每个设置在一个像素区域中，并且多个像素电极分别设置在其中一个像素区域中，其中薄膜晶体管包括至少一个Ti层。

5. 发明申请

US20120171791A1 METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP 失效
标题翻译：用于制造发光二极管芯片的方法
公开(公告)号：US20120171791A1
公开(公告)日：2012-07-05
申请号：US13207439
申请日：2011-08-11
申请人： PO-MIN TU , SHIH-CHENG HUANG
发明人： PO-MIN TU , SHIH-CHENG HUANG
IPC分类号： H01L21/78
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0095 , Y10S438/945
摘要： A method for fabricating an LED chip is provided. Firstly, a SiO2 pattern layer is formed on a top surface of a substrate. Then, lighting structures are grown on a portion of the top surface of substrate without the SiO2 pattern layer thereon. Thereafter, the SiO2 pattern layer is removed by wet etching to form spaces between bottoms of the lighting structures and substrate. An etching solution is used to permeate into the spaces and etch the lighting structures from the bottoms thereof, whereby the lighting structures each with a trapezoid shape is formed. Sidewalls of each of the lighting structures are inclined inwardly along a top-to-bottom direction.
摘要翻译：提供一种制造LED芯片的方法。首先，在基板的上表面上形成SiO 2图形层。然后，在衬底的顶表面的一部分上生长照明结构，而不在其上形成SiO 2图案层。此后，通过湿蚀刻去除SiO 2图案层，以在照明结构和基板的底部之间形成空间。使用蚀刻溶液渗透到空间中并从其底部蚀刻照明结构，由此形成各自具有梯形形状的照明结构。每个照明结构的侧壁沿着顶部到底部的方向向内倾斜。

6. 发明申请

US20120041121A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN 有权
标题翻译：制造多孔结构的方法和形成图案的方法
公开(公告)号：US20120041121A1
公开(公告)日：2012-02-16
申请号：US13278904
申请日：2011-10-21
申请人： Koji ASAKAWA , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
发明人： Koji ASAKAWA , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
IPC分类号： C08K5/07 , C08G77/00 , C08K5/101 , C08F220/06
CPC分类号： C08J9/26 , B82Y10/00 , B82Y30/00 , C03C17/007 , C03C2217/425 , C03C2217/479 , C03C2218/33 , C08J2333/12 , C08J2383/16 , C23F1/30 , G03F7/0002 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/0029 , H01G11/30 , H01G11/56 , H01J9/02 , H01J9/025 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/0337 , H01L21/31695 , H01M2/145 , H01M2/1653 , H01M4/131 , H01M4/133 , H01M4/8605 , H01M4/96 , H01M8/0234 , H01M8/0245 , H01M8/026 , H01M8/1011 , H01M10/0525 , Y02E60/13 , Y02E60/523 , Y02P70/56 , Y10S438/945 , Y10S438/947 , Y10S977/90 , Y10T428/24149
摘要： A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
摘要翻译：图案形成材料含有嵌段共聚物或接枝共聚物，并形成具有微聚合物相的结构，其中，关于构成嵌段共聚物或接枝共聚物的聚合物链中的至少两个聚合物链，N /（Nc- 否）构成各聚合物链的单体单元的值为1.4以上，其中N表示单体单元中的总原子数，Nc表示单体单元中的碳原子数，No表示单体单元中的氧原子数。

7. 发明申请

US20120037594A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN 失效
公开(公告)号：US20120037594A1
公开(公告)日：2012-02-16
申请号：US13278833
申请日：2011-10-21
申请人： Koji ASAKAWA , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
发明人： Koji ASAKAWA , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
IPC分类号： C23F1/04
CPC分类号： C08J9/26 , B82Y10/00 , B82Y30/00 , C03C17/007 , C03C2217/425 , C03C2217/479 , C03C2218/33 , C08J2333/12 , C08J2383/16 , C23F1/30 , G03F7/0002 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/0029 , H01G11/30 , H01G11/56 , H01J9/02 , H01J9/025 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/0337 , H01L21/31695 , H01M2/145 , H01M2/1653 , H01M4/131 , H01M4/133 , H01M4/8605 , H01M4/96 , H01M8/0234 , H01M8/0245 , H01M8/026 , H01M8/1011 , H01M10/0525 , Y02E60/13 , Y02E60/523 , Y02P70/56 , Y10S438/945 , Y10S438/947 , Y10S977/90 , Y10T428/24149
摘要： A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.

8. 发明申请

US20120034770A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20120034770A1
公开(公告)日：2012-02-09
申请号：US13276025
申请日：2011-10-18
申请人： Gee-Sung Chae , Yong-Sup Hwang
发明人： Gee-Sung Chae , Yong-Sup Hwang
IPC分类号： H01L21/28
CPC分类号： H01L29/4908 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/665 , Y10S438/945
摘要： A liquid crystal display device includes a plurality of gate lines and data lines crossing each other to define a plurality of pixel regions, a plurality of thin film transistors, each disposed in one of the pixel regions, and a plurality of pixel electrodes, each disposed in one of the pixel regions, wherein the thin film transistor includes at least one Ti layer.
摘要翻译：液晶显示装置包括多个栅极线和数据线，彼此交叉以限定多个像素区域，多个薄膜晶体管，每个设置在一个像素区域中，并且多个像素电极分别设置在其中一个像素区域中，其中薄膜晶体管包括至少一个Ti层。

9. 发明授权

US08089542B2 CMOS imager with integrated circuitry 有权
标题翻译： CMOS成像器集成电路
公开(公告)号：US08089542B2
公开(公告)日：2012-01-03
申请号：US13118066
申请日：2011-05-27
申请人： Christophe J. Chevallier
发明人： Christophe J. Chevallier
IPC分类号： H04N5/225 , H04N5/76 , H04N3/14
CPC分类号： H04N5/772 , H04N5/335 , H04N5/907 , H04N9/8047 , Y10S438/945
摘要： A CMOS imager is integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. Integrating a CMOS imager and peripheral circuitry allows for a single chip image sensing device.
摘要翻译： CMOS成像器与逻辑和支持电路集成在单个基板上，用于解码和处理由CMOS成像器接收的光学信息。集成CMOS成像器和外围电路允许单片图像感测设备。

10. 发明授权

US07718498B2 Semiconductor device and method of producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07718498B2
公开(公告)日：2010-05-18
申请号：US11432264
申请日：2006-05-11
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H01L21/336
CPC分类号： H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7838 , H04N5/3741 , Y10S438/945
摘要： A semiconductor device suitable for a source-follower circuit, provided with a gate electrode formed on a semiconductor substrate via a gate insulation film, a first conductivity type layer formed in the semiconductor substrate under a conductive portion of the gate electrode and containing a first conductivity type impurity, first source/drain regions of the first conductivity type impurity formed in the semiconductor substrate and extended from edge portions of the gate electrode, and second source/drain regions having a first conductivity type impurity concentration lower than that in the first source/drain regions and formed adjoining the gate insulation film and the first source/drain regions in the semiconductor substrate so as to overlap portions of the conductive portion of the gate electrode.
摘要翻译：一种适用于源极跟随器电路的半导体器件，其设置有通过栅极绝缘膜形成在半导体衬底上的栅极电极，形成在半导体衬底中的栅极电极的导电部分下方并且包含第一导电性的第一导电型层形成在半导体衬底中并从栅电极的边缘部分延伸的第一导电类型杂质的第一源极/漏极区域，以及具有比第一源极/漏极区域低的第一导电类型杂质浓度的第二源极/ 漏区，并且与半导体衬底中的栅极绝缘膜和第一源极/漏极区相邻地形成，以与栅电极的导电部分重叠。

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