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1. 发明申请

US20140290741A1 PHOTOELECTRIC CONVERSION APPARATUS 审中-公开
标题翻译：光电转换装置
公开(公告)号：US20140290741A1
公开(公告)日：2014-10-02
申请号：US14342232
申请日：2012-07-27
申请人： Kazumasa Umesato , Yukari Hashimoto , Shinya Ishikawa
发明人： Kazumasa Umesato , Yukari Hashimoto , Shinya Ishikawa
IPC分类号： H01L31/0368 , H01L31/05 , H01L31/032
CPC分类号： H01L31/0368 , H01L31/0465 , Y02E10/50
摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes: first and second electrode layers on a main surface of a substrate, separated by a space; a first semiconductor layer having a first conductivity type and containing crystal grains; a second semiconductor layer on the first semiconductor layer, having a second conductivity type different from the first conductivity type; and one or more first connection conductors on the second electrode layer, coupled to a side of the second semiconductor, and electrically connecting the second semiconductor layer to the second electrode layer. The first semiconductor layer includes: a first portion on the first electrode layer, including crystal grains having a first average size; a second portion disposed at the space on the substrate; and a third portion on the second electrode layer, including crystal grains having a second average size that is larger than the first average size.
摘要翻译：公开了一种光电转换装置。光电转换装置包括：基板的主表面上的第一和第二电极层，被隔开一个空间; 具有第一导电类型并含有晶粒的第一半导体层; 第一半导体层上的第二半导体层，具有不同于第一导电类型的第二导电类型; 以及耦合到所述第二半导体的一侧并且将所述第二半导体层电连接到所述第二电极层的所述第二电极层上的一个或多个第一连接导体。第一半导体层包括：第一电极层上的第一部分，包括具有第一平均尺寸的晶粒; 设置在所述基板上的所述空间的第二部分; 以及第二电极层上的第三部分，包括具有大于第一平均尺寸的第二平均尺寸的晶粒。

2. 发明授权

US08772826B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US08772826B2
公开(公告)日：2014-07-08
申请号：US13701150
申请日：2011-05-30
申请人： Hideaki Asao , Rui Kamada , Shuichi Kasai , Seiji Oguri , Isamu Tanaka , Nobuyuki Horiuchi , Kazumasa Umesato
发明人： Hideaki Asao , Rui Kamada , Shuichi Kasai , Seiji Oguri , Isamu Tanaka , Nobuyuki Horiuchi , Kazumasa Umesato
IPC分类号： H01L29/88 , H01L29/861
CPC分类号： H01L31/0272 , H01L31/0322 , H01L31/046 , H01L31/0465 , Y02E10/541
摘要： It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.
摘要翻译：本发明的目的是提供一种具有高光电转换效率的光电转换装置。光电转换装置包括电极层和位于电极层上的光吸收层。光吸收层由含有黄铜矿类化合物半导体的多个层叠半导体层构成。半导体层含有氧。半导体层彼此层叠的半导体层的表面的摩尔浓度及其附近的摩尔浓度高于半导体层中的氧的平均摩尔浓度。

3. 发明申请

US20130069187A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20130069187A1
公开(公告)日：2013-03-21
申请号：US13701150
申请日：2011-05-30
申请人： Hideaki Asao , Rui Kamada , Shuichi Kasai , Seiji Oguri , Isamu Tanaka , Nobuyuki Horiuchi , Kazumasa Umesato
发明人： Hideaki Asao , Rui Kamada , Shuichi Kasai , Seiji Oguri , Isamu Tanaka , Nobuyuki Horiuchi , Kazumasa Umesato
IPC分类号： H01L31/0272
CPC分类号： H01L31/0272 , H01L31/0322 , H01L31/046 , H01L31/0465 , Y02E10/541
摘要： It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.
摘要翻译：本发明的目的是提供一种具有高光电转换效率的光电转换装置。光电转换装置包括电极层和位于电极层上的光吸收层。光吸收层由含有黄铜矿类化合物半导体的多个层叠半导体层构成。半导体层含有氧。半导体层彼此层叠的半导体层的表面的摩尔浓度及其附近的摩尔浓度高于半导体层中的氧的平均摩尔浓度。

4. 发明申请

US20140127851A1 METHOD FOR PRODUCING SEMICONDUCTOR LAYER, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE, AND SEMICONDUCTOR STARTING MATERIAL 有权
标题翻译：用于制造半导体层的方法，用于制造光电转换装置的方法和半导体起始材料
公开(公告)号：US20140127851A1
公开(公告)日：2014-05-08
申请号：US14129684
申请日：2012-06-18
申请人： Akio Yamamoto , Seiji Oguri , Hiromitsu Ogawa , Aki Kitabayashi , Shinichi Abe , Kazumasa Umesato , Norihiko Matsushima , Keizo Takeda , Manabu Kyuzo , Ken Nishiura , Atsuo Hatate
发明人： Akio Yamamoto , Seiji Oguri , Hiromitsu Ogawa , Aki Kitabayashi , Shinichi Abe , Kazumasa Umesato , Norihiko Matsushima , Keizo Takeda , Manabu Kyuzo , Ken Nishiura , Atsuo Hatate
IPC分类号： H01L31/18 , H01L31/032 , H01L21/02
CPC分类号： H01L31/18 , H01L21/0237 , H01L21/02422 , H01L21/02469 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02551 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0324 , Y02E10/541 , Y02P70/521
摘要： Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.
摘要翻译：公开了半导体层的制造方法和光电转换装置的制造方法。制造半导体层的方法的一个实施例包括：形成含有金属元素和氧元素的膜; 通过加热膜产生氧气; 以及通过使所述金属元素与硫属元素反应从所述膜形成含有金属硫族化物的半导体层。该方法的另一实施例包括形成含有金属元素的下膜; 在下膜上形成含有金属元素和含有氧的物质的上膜; 通过加热物质产生氧气; 以及通过使硫属元素与下膜和上膜中的金属元素反应，从下膜和上膜形成含有金属硫族化物的半导体层。

5. 发明授权

US09287434B2 Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material 有权
标题翻译：半导体层的制造方法，光电转换装置的制造方法以及半导体原料
公开(公告)号：US09287434B2
公开(公告)日：2016-03-15
申请号：US14129684
申请日：2012-06-18
申请人： Akio Yamamoto , Seiji Oguri , Hiromitsu Ogawa , Aki Kitabayashi , Shinichi Abe , Kazumasa Umesato , Norihiko Matsushima , Keizo Takeda , Manabu Kyuzo , Ken Nishiura , Atsuo Hatate
发明人： Akio Yamamoto , Seiji Oguri , Hiromitsu Ogawa , Aki Kitabayashi , Shinichi Abe , Kazumasa Umesato , Norihiko Matsushima , Keizo Takeda , Manabu Kyuzo , Ken Nishiura , Atsuo Hatate
IPC分类号： H01L31/18 , H01L21/02 , H01L31/032
CPC分类号： H01L31/18 , H01L21/0237 , H01L21/02422 , H01L21/02469 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02551 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0324 , Y02E10/541 , Y02P70/521
摘要： Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.
摘要翻译：公开了半导体层的制造方法和光电转换装置的制造方法。制造半导体层的方法的一个实施例包括：形成含有金属元素和氧元素的膜; 通过加热膜产生氧气; 以及通过使所述金属元素与硫属元素反应从所述膜形成含有金属硫族化物的半导体层。该方法的另一实施例包括形成含有金属元素的下膜; 在下膜上形成含有金属元素和含有氧的物质的上膜; 通过加热物质产生氧气; 以及通过使硫属元素与下膜和上膜中的金属元素反应，从下膜和上膜形成含有金属硫族化物的半导体层。

6. 发明授权

US09184329B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09184329B2
公开(公告)日：2015-11-10
申请号：US14114895
申请日：2012-05-29
申请人： Shinichi Abe , Akio Yamamoto , Seiji Oguri , Kazumasa Umesato
发明人： Shinichi Abe , Akio Yamamoto , Seiji Oguri , Kazumasa Umesato
IPC分类号： H01L31/065 , H01L31/032 , H01L31/0749 , H01L31/046 , H01L31/0465
CPC分类号： H01L31/065 , H01L31/0322 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541
摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.
摘要翻译：公开了一种光电转换装置。光电转换装置包括电极层和半导体层。半导体层位于电极层上并含有I-III-VI族化合物。在半导体层中，IB族元素与III-B族元素的原子比从电极层侧的半导体层的一个主面侧向厚度方向的中央部分减少，从中央部向在与电极层相对的一侧的另一主表面侧。

7. 发明申请

US20140069492A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20140069492A1
公开(公告)日：2014-03-13
申请号：US14114895
申请日：2012-05-29
申请人： Shinichi Abe , Akio Yamamoto , Seiji Oguri , Kazumasa Umesato
发明人： Shinichi Abe , Akio Yamamoto , Seiji Oguri , Kazumasa Umesato
IPC分类号： H01L31/065
CPC分类号： H01L31/065 , H01L31/0322 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541
摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.
摘要翻译：公开了一种光电转换装置。光电转换装置包括电极层和半导体层。半导体层位于电极层上并含有I-III-VI族化合物。在半导体层中，IB族元素与III-B族元素的原子比从电极层侧的半导体层的一个主面侧向厚度方向的中央部分减少，从中央部向在与电极层相对的一侧的另一主表面侧。

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