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1. 发明申请

US20140127851A1 METHOD FOR PRODUCING SEMICONDUCTOR LAYER, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE, AND SEMICONDUCTOR STARTING MATERIAL 有权
标题翻译：用于制造半导体层的方法，用于制造光电转换装置的方法和半导体起始材料
公开(公告)号：US20140127851A1
公开(公告)日：2014-05-08
申请号：US14129684
申请日：2012-06-18
申请人： Akio Yamamoto , Seiji Oguri , Hiromitsu Ogawa , Aki Kitabayashi , Shinichi Abe , Kazumasa Umesato , Norihiko Matsushima , Keizo Takeda , Manabu Kyuzo , Ken Nishiura , Atsuo Hatate
发明人： Akio Yamamoto , Seiji Oguri , Hiromitsu Ogawa , Aki Kitabayashi , Shinichi Abe , Kazumasa Umesato , Norihiko Matsushima , Keizo Takeda , Manabu Kyuzo , Ken Nishiura , Atsuo Hatate
IPC分类号： H01L31/18 , H01L31/032 , H01L21/02
CPC分类号： H01L31/18 , H01L21/0237 , H01L21/02422 , H01L21/02469 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02551 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0324 , Y02E10/541 , Y02P70/521
摘要： Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.
摘要翻译：公开了半导体层的制造方法和光电转换装置的制造方法。制造半导体层的方法的一个实施例包括：形成含有金属元素和氧元素的膜; 通过加热膜产生氧气; 以及通过使所述金属元素与硫属元素反应从所述膜形成含有金属硫族化物的半导体层。该方法的另一实施例包括形成含有金属元素的下膜; 在下膜上形成含有金属元素和含有氧的物质的上膜; 通过加热物质产生氧气; 以及通过使硫属元素与下膜和上膜中的金属元素反应，从下膜和上膜形成含有金属硫族化物的半导体层。

2. 发明授权

US09287434B2 Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material 有权
标题翻译：半导体层的制造方法，光电转换装置的制造方法以及半导体原料
公开(公告)号：US09287434B2
公开(公告)日：2016-03-15
申请号：US14129684
申请日：2012-06-18
申请人： Akio Yamamoto , Seiji Oguri , Hiromitsu Ogawa , Aki Kitabayashi , Shinichi Abe , Kazumasa Umesato , Norihiko Matsushima , Keizo Takeda , Manabu Kyuzo , Ken Nishiura , Atsuo Hatate
发明人： Akio Yamamoto , Seiji Oguri , Hiromitsu Ogawa , Aki Kitabayashi , Shinichi Abe , Kazumasa Umesato , Norihiko Matsushima , Keizo Takeda , Manabu Kyuzo , Ken Nishiura , Atsuo Hatate
IPC分类号： H01L31/18 , H01L21/02 , H01L31/032
CPC分类号： H01L31/18 , H01L21/0237 , H01L21/02422 , H01L21/02469 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02551 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0324 , Y02E10/541 , Y02P70/521
摘要： Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.
摘要翻译：公开了半导体层的制造方法和光电转换装置的制造方法。制造半导体层的方法的一个实施例包括：形成含有金属元素和氧元素的膜; 通过加热膜产生氧气; 以及通过使所述金属元素与硫属元素反应从所述膜形成含有金属硫族化物的半导体层。该方法的另一实施例包括形成含有金属元素的下膜; 在下膜上形成含有金属元素和含有氧的物质的上膜; 通过加热物质产生氧气; 以及通过使硫属元素与下膜和上膜中的金属元素反应，从下膜和上膜形成含有金属硫族化物的半导体层。

3. 发明授权

US09184329B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09184329B2
公开(公告)日：2015-11-10
申请号：US14114895
申请日：2012-05-29
申请人： Shinichi Abe , Akio Yamamoto , Seiji Oguri , Kazumasa Umesato
发明人： Shinichi Abe , Akio Yamamoto , Seiji Oguri , Kazumasa Umesato
IPC分类号： H01L31/065 , H01L31/032 , H01L31/0749 , H01L31/046 , H01L31/0465
CPC分类号： H01L31/065 , H01L31/0322 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541
摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.
摘要翻译：公开了一种光电转换装置。光电转换装置包括电极层和半导体层。半导体层位于电极层上并含有I-III-VI族化合物。在半导体层中，IB族元素与III-B族元素的原子比从电极层侧的半导体层的一个主面侧向厚度方向的中央部分减少，从中央部向在与电极层相对的一侧的另一主表面侧。

4. 发明申请

US20140069492A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20140069492A1
公开(公告)日：2014-03-13
申请号：US14114895
申请日：2012-05-29
申请人： Shinichi Abe , Akio Yamamoto , Seiji Oguri , Kazumasa Umesato
发明人： Shinichi Abe , Akio Yamamoto , Seiji Oguri , Kazumasa Umesato
IPC分类号： H01L31/065
CPC分类号： H01L31/065 , H01L31/0322 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541
摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.
摘要翻译：公开了一种光电转换装置。光电转换装置包括电极层和半导体层。半导体层位于电极层上并含有I-III-VI族化合物。在半导体层中，IB族元素与III-B族元素的原子比从电极层侧的半导体层的一个主面侧向厚度方向的中央部分减少，从中央部向在与电极层相对的一侧的另一主表面侧。

5. 发明申请

US20130125982A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20130125982A1
公开(公告)日：2013-05-23
申请号：US13813011
申请日：2011-07-27
申请人： Seiji Oguri , Isamu Tanaka , Norihiko Matsushima , Akio Yamamoto
发明人： Seiji Oguri , Isamu Tanaka , Norihiko Matsushima , Akio Yamamoto
IPC分类号： H01L31/032
CPC分类号： H01L31/0322 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541
摘要： It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises a light-absorbing layer including a chalcopyrite-based compound semiconductor and oxygen. The light-absorbing layer includes voids therein. An atomic concentration of oxygen in the vicinity of the voids is higher than an average atomic concentration of oxygen in the light-absorbing layer.
摘要翻译：旨在提供一种在光吸收层和电极层之间具有高粘附性的光电转换装置以及高的光电转换效率。光电转换装置包括包含基于黄铜矿的化合物半导体和氧的光吸收层。光吸收层包括其中的空隙。空隙附近的氧原子浓度高于光吸收层中氧的平均原子浓度。

6. 发明授权

US08810317B2 High frequency circuit and high frequency module 有权
标题翻译：高频电路和高频模块
公开(公告)号：US08810317B2
公开(公告)日：2014-08-19
申请号：US13547431
申请日：2012-07-12
申请人： Ryo Kadoi , Norio Hayashi , Satoshi Shimizu , Akio Yamamoto
发明人： Ryo Kadoi , Norio Hayashi , Satoshi Shimizu , Akio Yamamoto
IPC分类号： H03G3/30
CPC分类号： H03F1/0261 , H03F1/0211 , H03F3/193 , H03F3/195 , H03F2200/18 , H03F2200/465 , H03G3/3042
摘要： A high frequency circuit and a high frequency module are provided, in which the accuracy of compensation operation is improved in compensating by digital control. The amplification gain of an amplification element of an amplifier unit is controlled by a bias current of a bias control unit. A process monitoring circuit of a calibration circuit includes a first and a second element characteristic detector and a voltage comparator. The detectors convert the current of replica elements into a first and a second detection voltage. The voltage comparator compares a first and a second detection voltage and supplies a comparison output signal to a search control unit. Responding to the comparison output signal of the comparator and a clock signal of a clock generating unit, the controller generates a multi-bit digital compensation value according to a predetermined search algorithm, and the bias control unit of the second detector is feedback-controlled.
摘要翻译：提供了一种高频电路和高频模块，其中通过数字控制来补偿补偿操作的精度。放大器单元的放大元件的放大增益由偏置控制单元的偏置电流控制。校准电路的过程监控电路包括第一和第二元件特征检测器和电压比较器。检测器将复制元件的电流转换成第一和第二检测电压。电压比较器比较第一和第二检测电压，并将比较输出信号提供给搜索控制单元。响应于比较器的比较输出信号和时钟产生单元的时钟信号，控制器根据预定的搜索算法生成多位数字补偿值，并且反馈控制第二检测器的偏置控制单元。

7. 发明申请

US20140144551A1 HIGH-STRENGTH STEEL SHEET HAVING IMPROVED RESISTANCE TO FRACTURE AND TO HIC 有权
标题翻译：具有改善耐腐蚀性和耐腐蚀性的高强度钢板
公开(公告)号：US20140144551A1
公开(公告)日：2014-05-29
申请号：US13820581
申请日：2011-09-02
申请人： Izuru Minato , Nobuaki Takahashi , Akio Yamamoto
发明人： Izuru Minato , Nobuaki Takahashi , Akio Yamamoto
IPC分类号： C22C38/50 , C22C38/48 , C22C38/46 , C22C38/00 , C22C38/42 , C22C38/06 , C22C38/04 , C22C38/02 , C21D8/02 , C22C38/44
CPC分类号： C22C38/50 , C21D8/0205 , C21D8/0226 , C21D8/0263 , C21D2211/002 , C21D2211/005 , C21D2211/009 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/48 , C22C38/58 , F16L9/02
摘要： A high-strength steel sheet having improved HIC resistance and fracture resistance even when it is thick has a chemical composition comprising, in mass %, C: 0.02-0.07%, Si: 0.05-0.50%, Mn: 1.10-1.60%, P: at most 0.015%, S: at most 0.0030%, Nb: 0.005-0.030%, Ti: 0.005-0.020%, Al: 0.005-0.060%, Ca: 0.0005-0.0060%, N: 0.0015-0.0070%, at least one of Cu, Ni, Cr, and Mo in a total of greater than 0.1% to less than 1.5%, and a remainder of Fe and impurities and a steel structure composed of at least 10% by area of bainite and a remainder of ferrite and pearlite. The degree of segregation is less than 1.6 for Nb and less than 1.4 for Mn in the central portion of the thickness of the steel sheet.
摘要翻译：即使厚度高的耐HIC和耐断裂性提高的高强度钢板也具有以质量％计含有C：0.02-0.07％，Si：0.05-0.50％，Mn：1.10-1.60％，P ：至少0.015％，S：0.0030％以下，Nb：0.005〜0.030％，Ti：0.005〜0.020％，Al：0.005〜0.060％，Ca：0.0005〜0.0060％，N：0.0015-0.0070％ Cu，Ni，Cr和Mo中的一种总计大于0.1％至小于1.5％，剩余的Fe和杂质以及由贝氏体至少10％的面积组成的钢结构和剩余的铁素体和珠光体。对于Nb，偏析度小于1.6，在钢板的中心部分的Mn小于1.4。

8. 发明申请

US20130271287A1 OPERATION MANAGEMENT SUPPORT APPARATUS FOR POWER PLANT 有权
标题翻译：电厂运行管理支援装置
公开(公告)号：US20130271287A1
公开(公告)日：2013-10-17
申请号：US13994384
申请日：2011-12-12
申请人： Musashi Shigeyama , Kazunobu Kurahashi , Chihiro Ohba , Akio Yamamoto
发明人： Musashi Shigeyama , Kazunobu Kurahashi , Chihiro Ohba , Akio Yamamoto
IPC分类号： G08B23/00
CPC分类号： G08B23/00 , G05B23/0267 , G21D3/001 , G21D3/008 , G21D3/04 , Y02E30/40 , Y04S10/522
摘要： Provide an operation management support apparatus for power plant, supporting a maintenance work and preventing a user from violation of the operational safety programs, caused by a human error in case where a power plant temporarily deviates from LCO. The operation management support apparatus for power plant includes: an alarm device 12 that compares a plant data measuring by sensors 3a-3x installed in a nuclear power plant 2 with preset alarm the value and generates an alarm output instruction signal for instructing an alarm output in case of determining that the power plant is abnormal; an operational safety program DB 14 that stores an information in relation to an operational safety program of the power plant; an support device 13 that extracts an information in relation to the operational safety program of which the alarm output represents a conflict from the operational safety program DB 14 based on the plant data in relation to the alarm output in case of receiving the alarm output instruction signal; and a display device 15 (16) that displays the plant data and the information in relation to the operational safety program, extracted by the support deice.
摘要翻译：为电厂提供运行管理支持设备，支持维护工作，防止用户违反操作安全规程，造成电厂临时偏离LCO的人为错误。发电厂的运行管理支援装置包括：报警装置12，将安装在核电站2中的传感器3a-3x进行测量的工厂数据与预先设定的报警值进行比较，生成用于指示报警输出的报警输出指示信号确定发电厂异常的情况; 操作安全程序DB14，其存储关于发电厂的操作安全程序的信息; 在接收到报警输出指示信号的情况下，基于与报警输出相关的工厂数据，从操作安全程序DB14提取关于报警输出代表冲突的操作安全程序的信息的支持装置13 ; 以及显示装置15（16），其显示由支持部提取的工厂数据和与操作安全程序有关的信息。

9. 发明授权

US08226500B2 Golf club head 有权
标题翻译：高尔夫球杆头
公开(公告)号：US08226500B2
公开(公告)日：2012-07-24
申请号：US12542088
申请日：2009-08-17
申请人： Akio Yamamoto , Seiji Hayase
发明人： Akio Yamamoto , Seiji Hayase
IPC分类号： A63B53/04
CPC分类号： A63B53/0466 , A63B60/54 , A63B69/3635 , A63B2053/0408 , A63B2053/0412 , A63B2053/0433 , A63B2053/0437 , A63B2053/045 , A63B2053/0458 , A63B2060/002
摘要： A head 2 is hollow. The head 2 has a face 4, a crown 6 and a sole 8. A rib 20 is provided on the inner surface of the head. Preferably, the rib 20 has a toe side part 20t located on the inner surface of a side 10 of a toe side, a sole disposing part 20s located on the inner surface of the sole 8, and a heel side part 20h located on the side 10 of a heel side. Preferably, the toe side part 20t and the sole disposing part 20s are connected with each other. Preferably, the sole disposing part 20s and the heel side part 20h are connected with each other.
摘要翻译：头部2是中空的。头部2具有面4，冠部6和鞋底8.在头部的内表面上设置有肋20。优选地，肋20具有位于脚趾侧的侧面10的内表面上的脚趾侧部20t，位于鞋底8的内表面上的鞋底设置部20s和位于鞋底侧的鞋跟侧部20h 10个脚后跟。优选地，脚趾侧部20t和鞋底设置部20s彼此连接。优选地，鞋底设置部20s和跟部侧部20h彼此连接。

10. 发明申请

US20120094617A1 MODULE FOR MOBILE COMMUNICATION TERMINAL, AND MOBILE COMMUNICATION TERMINAL 审中-公开
标题翻译：移动通信终端模块和移动通信终端
公开(公告)号：US20120094617A1
公开(公告)日：2012-04-19
申请号：US13221937
申请日：2011-08-31
申请人： Masazumi Tone , Akio Yamamoto , Takashi Shiba , Osamu Hikino
发明人： Masazumi Tone , Akio Yamamoto , Takashi Shiba , Osamu Hikino
IPC分类号： H04B1/44
CPC分类号： H04B1/0057 , H04B1/525
摘要： A tunable filter in a tunable DPX module has frequency characteristics, and thus needs to be controlled with high accuracy so as to simultaneously cancel a transmission signal and noise in a reception band on a transmission side. For this reason, a canceller includes a filter having the same frequency characteristic as that of a tunable filter, and a structure having functions of compensating for an amplitude, a phase, and a delay. And, two lines of the cancellers are used to individually cancel a leak component of a transmission signal and a leak component of thermal noise in a reception band. In order to save the power consumption of the amplifier, a coupler is loosely coupled, and a combiner is tightly coupled. Further, in order to suppress the influence on a reception system due to the tough coupling, the combiner uses the amplifier for in-phase inputs.
摘要翻译：可调DPX模块中的可调滤波器具有频率特性，因此需要高精度地控制，以便同时消除发送侧的接收频带中的发送信号和噪声。因此，消除器包括具有与可调谐滤波器相同的频率特性的滤波器，以及具有补偿振幅，相位和延迟的功能的结构。并且，使用两行消除器单独地消除接收频带中的发送信号的泄漏分量和热噪声的泄漏分量。为了节省放大器的功耗，耦合器松耦合，组合器紧密耦合。此外，为了抑制由于强耦合对接收系统的影响，组合器使用用于同相输入的放大器。

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