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    • 9. 发明授权
    • Film formation apparatus and method for using same
    • 成膜装置及其使用方法
    • US08697578B2
    • 2014-04-15
    • US12285575
    • 2008-10-08
    • Nobutake NoderaJun SatoKazuya YamamotoKazuhide Hasebe
    • Nobutake NoderaJun SatoKazuya YamamotoKazuhide Hasebe
    • H01L21/311
    • C23C16/345C23C16/0218C23C16/4405C23C16/452C23C16/45542H01J37/32082H01J37/3244H01J37/32522
    • A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.
    • 在反应室内的第一喷嘴供给成膜反应性气体的同时,使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜 反应室和第一喷嘴,处于反应室不容纳目标基板的状态。 清洗工序依次包括:将清洗反应性气体供给到反应室内的蚀刻工序,激活清洗反应性气体,蚀刻副产物膜,以及停止排出工序 从反应室内供给清洗反应气体和排气。 蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。