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1. 发明申请

US20190025217A1 CARRIER FOR RAMAN SPECTROSCOPY AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20190025217A1
公开(公告)日：2019-01-24
申请号：US15815811
申请日：2017-11-17
申请人： National Cheng Kung University
发明人： Yon-Hua TZENG , Ying-Ren CHEN
IPC分类号： G01N21/65 , C23C16/511
CPC分类号： G01N21/658 , C23C16/0218 , C23C16/26 , C23C16/511
摘要： A carrier for Raman spectroscopy comprising: a substrate having a first metal surface; a plurality of graphene islands disposed on the substrate, wherein parts of the neighboring graphene islands are not connected and thereby form a plurality of gaps between the graphene islands; and a plurality of second metal particles disposed at the gaps between the graphene islands.

2. 发明授权

US09328413B2 Method for preparing graphene nanoribbon on insulating substrate 有权
标题翻译：在绝缘基板上制备石墨烯纳米棒的方法
公开(公告)号：US09328413B2
公开(公告)日：2016-05-03
申请号：US13580240
申请日：2011-08-05
申请人： Shujie Tang , Guqiao Ding , Xiaoming Xie , Ji Chen , Chen Wang , Mianheng Jiang
发明人： Shujie Tang , Guqiao Ding , Xiaoming Xie , Ji Chen , Chen Wang , Mianheng Jiang
IPC分类号： C23C16/26 , B05D3/00 , C23C16/02 , B82Y30/00 , B82Y40/00 , C01B31/04
CPC分类号： C23C16/0218 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/186 , C01B2204/06 , C23C16/0272 , C23C16/26 , Y10T428/2918
摘要： A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.
摘要翻译：提供了在具有原子级平坦度的解理面的绝缘基板上生长石墨烯纳米棒的方法，属于低维材料和新材料领域。该方法包括以下步骤。步骤1：切割绝缘基板以获得具有原子级平面度的解理面，并制备单个原子层步骤。步骤2：在具有规则单原子台阶的绝缘基板上直接生长石墨烯纳米纤维。在该方法中，使用原子台阶上的石墨烯的成核能与平坦解理面不同的特征，调节活性碳原子的温度，压力强度和过饱和度等条件，因此石墨烯仅沿着台阶边缘生长成可调节尺寸的石墨烯纳米棒。该方法主要应用于新型石墨烯光电器件领域。

3. 发明授权

US09312137B2 Reduction of native oxides by annealing in reducing gas or plasma 有权
公开(公告)号：US09312137B2
公开(公告)日：2016-04-12
申请号：US14068906
申请日：2013-10-31
申请人： Intermolecular Inc.
发明人： Frank Greer , Amol Joshi , Kevin Kashefi , Albert Sanghyup Lee , Abhijit Pethe , J Watanabe
IPC分类号： H01L21/00 , H01L21/28 , H01L21/02 , C23C16/02 , C23C16/455
CPC分类号： H01L21/28158 , C23C16/0218 , C23C16/45525 , H01L21/02175 , H01L21/0228 , H01L21/28194 , H01L21/28238
摘要： Native oxide growth on germanium, silicon germanium, and InGaAs undesirably affects CET (capacitive equivalent thickness) and EOT (effective oxide thickness) of high-k and low-k metal-oxide layers formed on these semiconductors. Even if pre-existing native oxide is initially removed from the bare semiconductor surface, some metal oxide layers are oxygen-permeable in thicknesses below about 25 Å thick. Oxygen-containing species used in the metal-oxide deposition process may diffuse through these permeable layers, react with the underlying semiconductor, and re-grow the native oxide. To eliminate or mitigate this re-growth, the substrate is exposed to a gas or plasma reductant (e.g., containing hydrogen). The reductant diffuses through the permeable layers to react with the re-grown native oxide, detaching the oxygen and leaving the un-oxidized semiconductor. The reduction product(s) resulting from the reaction may then be removed from the substrate (e.g., driven off by heat).

4. 发明申请

US20160075558A1 METHOD FOR PRODUCING ALIGNED CARBON NANOTUBE ASSEMBLY 审中-公开
标题翻译：生产对准碳纳米管组件的方法
公开(公告)号：US20160075558A1
公开(公告)日：2016-03-17
申请号：US14949697
申请日：2015-11-23
申请人： Zeon Corporation , National Institute of Advanced Industrial Science and Technology
发明人： Akiyoshi SHIBUYA , Kenji HATA , Motoo YUMURA
IPC分类号： C01B31/02 , C23C16/02 , C23C16/455 , C23C16/26 , C23C16/44
CPC分类号： C01B31/024 , B01J15/005 , B01J19/0006 , B01J19/0073 , B01J19/22 , B01J2219/00159 , B82Y30/00 , B82Y40/00 , C01B32/164 , C01B2202/08 , C23C16/0218 , C23C16/26 , C23C16/4408 , C23C16/4412 , C23C16/45502 , Y02P20/149
摘要： Provided is a production apparatus (100) for continuously producing aligned carbon nanotube aggregates on a substrate supporting a catalyst while continuously transferring the substrate. The production apparatus (100) includes gas mixing prevention means (12, 13) for preventing gas present outside a growth furnace (3a) from flowing into the growth furnace (3a). The gas mixing prevention means (12, 13) includes a seal gas ejection section (12b, 13b) so that the seal gas does not flow into the growth furnace through the openings of the growth furnace. The production apparatus prevents the outside air from flowing into the production apparatus, uniformly controls, within a range suitable to production of CNTs, a concentration distribution(s) and a flow rate distribution(s) of a raw material gas and/or a catalyst activation material on the substrate, and does not disturb gas flow as much as possible in the growth furnace.
摘要翻译：提供一种用于在支撑催化剂的基板上连续生产排列的碳纳米管聚集体的生产设备（100），同时连续转移基板。制造装置（100）包括用于防止存在于生长炉（3a）外的气体流入生长炉（3a）的气体混合防止装置（12,13）。气体混合防止装置（12,13）包括密封气体喷射部分（12b，13b），使得密封气体不通过生长炉的开口流入生长炉。制造装置防止外部空气流入制造装置，在适合于CNT的制造的范围内均匀地控制原料气体和/或催化剂的浓度分布和流量分布活化材料，并且不会在生长炉中尽可能地扰乱气体流动。

5. 发明申请

US20160042958A1 METHOD FOR FORMING BASE FILM OF GRAPHENE, GRAPHENE FORMING METHOD, AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE 有权
标题翻译：用于形成石墨基膜的方法，用于形成石墨的方法和用于形成石墨基膜的装置
公开(公告)号：US20160042958A1
公开(公告)日：2016-02-11
申请号：US14819038
申请日：2015-08-05
申请人： TOKYO ELECTRON LIMITED
发明人： Daisuke NISHIDE , Takashi MATSUMOTO , Munehito KAGAYA , Ryota IFUKU
IPC分类号： H01L21/285 , C23C16/52 , H01L21/67 , C23C16/18 , C23C16/26 , C23C16/46 , C23C16/455
CPC分类号： C23C16/26 , C01B31/0453 , C01B32/186 , C23C16/0218 , C23C16/0281 , C23C16/18 , C23C16/45523 , C23C16/46 , C23C16/56 , H01L21/28556 , H01L21/67103 , H01L21/68742 , H01L21/76864 , H01L21/76876 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
摘要翻译：形成石墨烯基膜的方法包括：通过使用氢气和氨气的有机金属化合物的化学气相沉积（CVD）在基板上形成作为石墨烯的基膜的金属膜; 将基板加热至除去形成的金属膜中的杂质作为气体的温度; 并将基板加热到金属膜中生长金属晶粒的温度，其中将基板加热到基板的温度达到在金属膜中生长金属晶粒的温度高于在将衬底加热时的衬底的温度作为气体除去形成的金属膜中包含的杂质的温度。

6. 发明申请

US20150376781A1 CLEANING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：清洗方法，半导体器件的制造方法，基板处理装置和记录介质
公开(公告)号：US20150376781A1
公开(公告)日：2015-12-31
申请号：US14752131
申请日：2015-06-26
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Shintaro KOGURA , Ryota SASAJIMA
IPC分类号： C23C16/44 , C23C16/52 , H01L21/02
CPC分类号： C23C16/4405 , C23C16/0218 , C23C16/30 , C23C16/4408 , C23C16/45523 , C23C16/52 , H01L21/02126 , H01L21/0228
摘要： There is provided a cleaning method including cleaning an interior of a process chamber in which a substrate is processed, by supplying a cleaning gas into the process chamber and exhausting the cleaning gas from the process chamber via an exhaust pipe; and cooling the exhaust pipe by maintaining a state where distribution of the cleaning gas into the exhaust pipe is substantially stopped. Also, the act of cleaning the interior of the process chamber and the act of cooling the exhaust pipe are repeated alternately.
摘要翻译：提供了一种清洁方法，包括通过向处理室供应清洁气体并经由排气管从处理室排出清洁气体来清洁其中处理基板的处理室的内部; 并且通过保持进入排气管的清洁气体的分布基本停止的状态来冷却排气管。此外，交替地重复清洁处理室的内部的动作和冷却排气管的动作。

7. 发明授权

US09153648B2 Semiconductor stacked body, method for manufacturing same, and semiconductor element 有权
标题翻译：半导体堆叠体及其制造方法以及半导体元件
公开(公告)号：US09153648B2
公开(公告)日：2015-10-06
申请号：US14110417
申请日：2012-04-03
申请人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
发明人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
IPC分类号： H01L29/20 , H01L29/267 , H01L29/737 , H01L29/778 , H01L29/78 , H01L29/812 , H01L29/872 , C23C16/02 , C23C16/30 , H01L21/02 , C30B25/18 , C30B29/40 , H01L33/00 , H01L33/12 , H01L33/32
CPC分类号： H01L29/2003 , C23C16/0218 , C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/267 , H01L29/7371 , H01L29/7788 , H01L29/7789 , H01L29/7827 , H01L29/8122 , H01L29/8128 , H01L29/872 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.
摘要翻译：一种半导体层叠体的制造方法以及具备该半导体层叠体的半导体元件，具备：半导体层叠体，具有以二氧化硅基板为主面的半导体层叠体，所述Ga 2 O 3基板以六方晶格排列有氧原子的面为主面，形成在Ga 2 O 3衬底上的缓冲层，以及形成在AlN缓冲层上的氮化物半导体层。

8. 发明授权

US09064693B2 Deposition of thin film dielectrics and light emitting nano-layer structures 有权
标题翻译：沉积薄膜电介质和发光纳米层结构
公开(公告)号：US09064693B2
公开(公告)日：2015-06-23
申请号：US13581281
申请日：2010-03-01
申请人： Jean-Paul Noel , Ming Li
发明人： Jean-Paul Noel , Ming Li
IPC分类号： H01L21/311 , H01L21/31 , H01L21/02 , C23C16/02 , C23C16/34 , C23C16/40 , C23C16/56 , H05B33/10
CPC分类号： H01L21/02164 , C23C16/0218 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02312 , H01L21/02337 , H05B33/10
摘要： Deposition of thin film dielectrics, and in particular for chemical vapor deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride, and/or other silicon compatible dielectrics includes post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g., a silicon source gas. Deposition of silicon containing dielectrics comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g., active layers containing rare earth containing luminescent centers. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.
摘要翻译：薄膜电介质的沉积，特别是用于化学气相沉积的包括多层电介质的纳米层结构，例如二氧化硅，氮化硅，氮氧化硅和/或其它与硅相容的电介质包括后沉积表面处理具有金属或半导体源气体的沉积层，例如硅源气体。含硅电介质的沉积包括用于沉积掺杂或未掺杂电介质层的硅烷基化学，以及用硅烷表面处理沉积的介电层。表面处理提供具有改进的层间均匀性和横向连续性的电介质层，以及适用于电致发光发光结构的多层结构的基本上原子平坦的介电层，例如含有含稀土含有发光中心的活性层。也可以为其它半导体器件提供掺杂或未掺杂的电介质薄膜或纳米层介电结构。

9. 发明授权

US09048092B2 Process for preparing graphene based on metal film-assisted annealing and the reaction with Cl2 有权
标题翻译：基于金属膜辅助退火和与Cl2反应制备石墨烯的方法
公开(公告)号：US09048092B2
公开(公告)日：2015-06-02
申请号：US14350282
申请日：2012-09-03
申请人： Hui Guo , Keji Zhang , Yuming Zhang , Pengfei Deng , Tianmin Lei
发明人： Hui Guo , Keji Zhang , Yuming Zhang , Pengfei Deng , Tianmin Lei
IPC分类号： H01L21/44 , H01L21/02 , C23C16/26 , C01B31/04 , C23C16/02 , C23C16/56 , B82Y30/00 , B82Y40/00
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B2204/32 , C23C16/0218 , C23C16/0272 , C23C16/26 , C23C16/56 , C30B25/02 , C30B29/36 , H01L21/02381 , H01L21/0262 , H01L21/02664
摘要： A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C.-1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C. for 10-30 min to reconstruct the carbon film into graphene; and taking out of the metal film from the sample wafer of graphene to obtain large area graphene. The graphene obtained by the method has large area, smooth surface, good continuity, and low porosity; and the product can be used to seal gas and liquid.
摘要翻译：提供了一种基于与辅助金属膜退火的与Cl2反应制备石墨烯的方法，包括以下步骤：对Si衬底进行常规洗涤，然后将Si衬底放入CVD系统的反应室中并排空，逐渐升温至950℃-1150℃，供给C3H8，并将Si衬底碳化3-10分钟; 将温度迅速升高至1150℃-1350℃，供应C3H8和SiH4，在碳化层上生长3C-SiC异质外延膜，然后在H2的保护下将温度降至环境温度，引入将生长的3C-SiC的样品晶片加入石英管中，加热至700-1100℃，供应Ar和Cl2的混合气体，并使Cl2与3C-SiC反应以产生碳膜，涂覆碳膜样品晶片在金属膜上，在900℃-1100℃退火10-30分钟以将碳膜重构成石墨烯; 并从石墨烯的样品晶片中取出金属膜，以获得大面积的石墨烯。该方法获得的石墨烯面积大，表面光滑，连续性好，孔隙率低; 该产品可用于密封气体和液体。

10. 发明申请

US20140315393A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20140315393A1
公开(公告)日：2014-10-23
申请号：US14230310
申请日：2014-03-31
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Takashi OZAKI , Hideki HORITA
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02211 , C23C16/0218 , C23C16/402 , C23C16/45527 , H01L21/02164 , H01L21/0228 , H01L21/02304 , H01L21/02312 , H01L21/32105 , H01L21/67109
摘要： A method of manufacturing a semiconductor device includes: pre-treating a surface of a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in a process chamber under a pressure less than atmospheric pressure; and forming a film on the pre-treated substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas to the substrate in the process chamber; and supplying a reaction gas to the substrate in the process chamber.
摘要翻译：一种制造半导体器件的方法包括：通过在低于大气压的压力下向在处理室中加热的衬底供应含氧气体和含氢气体来预处理衬底的表面; 并通过执行预定次数的循环在预处理的基板上形成膜。该循环包括：将前体气体供应到处理室中的基底; 并将反应气体供给到处理室中的基板。

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