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1. 发明申请

US20130299737A1 OXYGEN-SELECTIVE ADSORBENT HAVING FAST ADSORPTION RATE AND PREPARATION METHOD THEREOF 有权
标题翻译：具有快速吸附速率的氧选择性吸附剂及其制备方法
公开(公告)号：US20130299737A1
公开(公告)日：2013-11-14
申请号：US13980094
申请日：2012-01-26
申请人： Jong Ho Park , Kwang Bok Yi , Jong Nam Kim , Hee Tae Beum , Jong Kee Park , Chang Hyun Ko , Sang Sup Han , Soon Haeng Cho , Taesung Jung
发明人： Jong Ho Park , Kwang Bok Yi , Jong Nam Kim , Hee Tae Beum , Jong Kee Park , Chang Hyun Ko , Sang Sup Han , Soon Haeng Cho , Taesung Jung
IPC分类号： B01J20/04
CPC分类号： B01J20/041 , B01D53/02 , B01D2251/402 , B01D2251/408 , B01D2251/602 , B01D2251/606 , B01D2253/112 , B01D2257/104 , B01D2258/06 , B01J20/043 , B01J20/3078 , B01J20/3293 , B01J2220/42 , C01F11/06 , C01F11/18 , C01P2002/72 , C01P2002/88 , C01P2004/03
摘要： Provided is a preparation method of an oxygen-selective adsorbent selectively adsorbing oxygen in the air and an oxygen-selective adsorbent prepared thereby. The preparation method includes: preparing BaMg(CO3)2 particles or particles in which MgCO3 or Mg(OH)2 are attached to the outside of BaMg(CO3)2; and sintering the particles at a high temperature. The oxygen-selective adsorbent according to the present invention may adsorb oxygen in the air at a fast rate as compared with an existing oxygen-selective adsorbent and have high thermal stability and excellent oxygen adsorptivity.
摘要翻译：提供了选择性吸附空气中的氧的氧选择性吸附剂的制备方法和由此制备的氧选择性吸附剂。制备方法包括：制备BaMg（CO3）2颗粒或其中MgCO3或Mg（OH）2附着在BaMg（CO3）2外部的颗粒; 并在高温下烧结颗粒。与现有的氧选择性吸附剂相比，根据本发明的氧选择性吸附剂可以以较快的速度吸附空气中的氧并且具有高热稳定性和优异的氧吸附性。

2. 发明申请

US20130166392A1 DEVICE FOR DISPLAYING CONTENT BY MEANS OF DESIGNATED WEBSITE AND DESIGNATED WEBPAGE RECOGNITION AND A METHOD FOR THE SAME 审中-公开
标题翻译：用于通过指定网站和指定的网页识别来显示内容的装置及其相关方法
公开(公告)号：US20130166392A1
公开(公告)日：2013-06-27
申请号：US13818157
申请日：2011-07-20
申请人： Seong Kee Park
发明人： Seong Kee Park
IPC分类号： G06Q30/02
CPC分类号： G06Q30/02 , G06Q30/0241
摘要： An apparatus and method for displaying content through recognition of a designated web site and web page is provided. The apparatus includes an operating server which has a database storing information on at least one designated web site and web page as well as at least one advertisement content matched with the information and a user terminal which includes a user program provided by the operating server, wherein when the user terminal senses a set mouse action within a set area in a web page of in a designated web site, advertisement content matched with the web page of in the designated web site is outputted.
摘要翻译：提供了一种通过识别指定的网站和网页来显示内容的装置和方法。该装置包括操作服务器，其具有存储关于至少一个指定网站和网页的信息的数据库以及与该信息匹配的至少一个广告内容和包括由操作服务器提供的用户程序的用户终端，其中当用户终端感测到在指定网站的网页中的设置区域内的设置的鼠标动作时，输出与指定网站中的网页匹配的广告内容。

3. 发明申请

US20110259414A1 REFLECTIVE ELECTRODE AND PHOTOELECTRIC ELEMENT 审中-公开
标题翻译：反射电极和光电元件
公开(公告)号：US20110259414A1
公开(公告)日：2011-10-27
申请号：US13089904
申请日：2011-04-19
申请人： Jung-Shik Lim , Seong-Kee Park , Jae-Hyun Kim , Sun-Man Kim , Tae-Young Lee , Min-Cheol Kim
发明人： Jung-Shik Lim , Seong-Kee Park , Jae-Hyun Kim , Sun-Man Kim , Tae-Young Lee , Min-Cheol Kim
IPC分类号： H01L31/0224 , H01L31/0236
CPC分类号： H01L31/056 , Y02E10/52
摘要： A reflective electrode which can be provided in a photoelectric element such as light emitting diode or solar cell is disclosed. The reflective electrode include a plurality of conductive material layers electrically connected with a semiconductor layer used as light absorbing layer or active layer of the photoelectric element; and at least one metal film arranged between neighboring two of the plurality of the conductive material layers. Here, the plurality of the conductive material layers are formed of a conductive material having a lower refraction index than a refraction index of the semiconductor layer, and one of the conductive material layers which directly contacts with the semiconductor layer is formed of a conductive material having a lower contact resistance than a contact resistance of a metal with the semiconductor layer.
摘要翻译：公开了可以设置在诸如发光二极管或太阳能电池的光电元件中的反射电极。反射电极包括与用作光吸收层或光电元件的有源层的半导体层电连接的多个导电材料层; 以及布置在所述多个导电材料层中的相邻两个之间的至少一个金属膜。这里，多个导电材料层由具有比半导体层的折射率低的折射率的导电材料形成，并且与半导体层直接接触的一个导电材料层由导电材料形成，该导电材料具有比具有半导体层的金属的接触电阻低的接触电阻。

4. 发明授权

US07939826B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07939826B2
公开(公告)日：2011-05-10
申请号：US12258738
申请日：2008-10-27
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜110％的范围内。

5. 发明申请

US20100207248A1 Patterns of Semiconductor Device and Method of Forming the Same 有权
标题翻译：半导体器件的形式及其形成方法
公开(公告)号：US20100207248A1
公开(公告)日：2010-08-19
申请号：US12650498
申请日：2009-12-30
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L29/00 , H01L21/308 , H01L21/28
CPC分类号： H01L21/0338 , H01L21/0337
摘要： A method of forming patterns of a semiconductor device comprises providing a semiconductor substrate comprising a first region wherein first patterns are to be formed and a second region wherein second patterns are to be formed, each of the second patterns having a wider width than the first patterns, forming an etch target layer over the semiconductor substrate, forming first etch patterns over the etch target layer of the first and second regions, forming second etch patterns on both sidewalls of each of the first etch patterns, wherein the second etch pattern formed in the second region has a wider width than the second etch pattern formed in the first region, removing the first etch patterns, forming third etch patterns over the etch target layer of the second region, the third etch pattern overlapping part of the second pattern, and etching the etch target layer using the third etch patterns and the second etch patterns as an etch mask, to form the first and second patterns.
摘要翻译：一种形成半导体器件的图形的方法包括提供一种半导体衬底，该半导体衬底包括将要形成第一图案的第一区域和要形成第二图案的第二区域，每个第二图案的宽度比第一图案宽在所述半导体衬底上形成蚀刻目标层，在所述第一和第二区域的所述蚀刻目标层上形成第一蚀刻图案，在所述第一蚀刻图案的每个的两个侧壁上形成第二蚀刻图案，其中形成在所述第一蚀刻图案中的所述第二蚀刻图案第二区域具有比在第一区域中形成的第二蚀刻图案宽的宽度，去除第一蚀刻图案，在第二区域的蚀刻目标层上形成第三蚀刻图案，第二蚀刻图案与第二图案重叠部分，以及蚀刻使用第三蚀刻图案和第二蚀刻图案作为蚀刻掩模的蚀刻目标层，以形成第一和第二图案。

6. 发明授权

US07696581B2 Isolation film in semiconductor device and method of forming the same 失效
标题翻译：半导体器件中的隔离膜及其形成方法
公开(公告)号：US07696581B2
公开(公告)日：2010-04-13
申请号：US12249130
申请日：2008-10-10
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L29/76 , H01L31/062
CPC分类号： H01L21/76224 , H01L27/11526 , H01L27/11531
摘要： The present invention relates to an isolation film in a semiconductor device and method of forming the same. An isolation film is formed in a doped region of a peripheral region, in which the doped region is isolated from a deep well region of a cell region and the isolation film is thicker than an isolation film of the cell region so that a parasitic transistor is not generated and a leakage current can be prevented.
摘要翻译：本发明涉及一种半导体器件中的隔离膜及其制造方法。隔离膜形成在周边区域的掺杂区域中，其中掺杂区域与单元区域的深阱区域隔离，并且隔离膜比单元区域的隔离膜厚，使得寄生晶体管为不产生并且可以防止泄漏电流。

7. 发明授权

US07669005B1 Content addressable memory (CAM) devices having soft priority resolution circuits therein and methods of operating same 失效
标题翻译：具有软优先级分辨率电路的内容可寻址存储器（CAM）设备及其操作方法
公开(公告)号：US07669005B1
公开(公告)日：2010-02-23
申请号：US10613542
申请日：2003-07-03
申请人： Kee Park , Robert J. Proebsting , Scott Yu-Fan Chu , Michael Miller , Mark Baumann
发明人： Kee Park , Robert J. Proebsting , Scott Yu-Fan Chu , Michael Miller , Mark Baumann
IPC分类号： G06F12/00
CPC分类号： G11C15/00 , H04L45/742
摘要： Content addressable memory (CAM) devices use both hard and soft priority techniques to allocate entries of different priority therein. The priorities of multiple CAM array blocks within the CAM device may be programmed before or as entries are loaded therein and may be reprogrammed during operation as the allocation of entries within the CAM device changes. The allocation of entries may change in response to additions or deletions of entries or as entries are reprioritized. The CAM devices include preferred priority resolution circuits that can resolve competing soft and hard priorities between multiple hit signals that are generated in response to a search operation. Such hit signals may be active to reflect the presence of at least one matching entry within a CAM array block. The resolution of which active hit signal has the highest overall priority among many can be used to facilitate the identification of the location (e.g., array address and row address) of a highest priority matching entry within the entire CAM device. A priority resolution circuit may also resolve competing hard priorities between two or more active hit signals having equivalent soft priority. This aspect of the priority resolution circuit is provided so that an active hit signal having a highest overall priority can be resolved whenever multiple CAM array blocks having the same soft priority are detected as having matching entries therein during a search operation.
摘要翻译：内容可寻址存储器（CAM）设备使用硬和软优先级技术来分配不同优先级的条目。 CAM设备内的多个CAM阵列块的优先级可以在条目加载之前被编程，也可以在操作期间被重新编程，因为CAM设备内的条目的分配改变。条目的分配可能会随着条目的添加或删除而变化，或者条目被重新设定为优先级。 CAM设备包括优选的优先级分辨率电路，其可以解决响应于搜索操作而产生的多个命中信号之间的竞争的软和硬优先级。这种命中信号可以是有效的，以反映CAM阵列块内至少一个匹配条目的存在。可以使用哪个主动命中信号具有最高总体优先级的分辨率在许多之中，以便于识别整个CAM设备内的最高优先级匹配条目的位置（例如，阵列地址和行地址）。优先级分辨率电路还可以解决具有相同软优先级的两个或更多个激活命中信号之间的竞争硬优先级。提供优先级分辨率电路的这个方面，使得每当具有相同软优先级的每个CAM阵列块在搜索操作期间被检测为具有匹配条目时，可以解决具有最高总优先级的主动命中信号。

8. 发明授权

US07442958B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07442958B2
公开(公告)日：2008-10-28
申请号：US11768588
申请日：2007-06-26
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/76
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

9. 发明授权

US07304875B1 Content addressable memory (CAM) devices that support background BIST and BISR operations and methods of operating same 有权
标题翻译：支持背景BIST和BISR操作的内容可寻址内存（CAM）设备及其操作方法
公开(公告)号：US07304875B1
公开(公告)日：2007-12-04
申请号：US11184414
申请日：2005-07-19
申请人： Chuen Der Lien , Michael Miller , Chau-Chin Wu , Kee Park , Scott Yu-Fan Chu
发明人： Chuen Der Lien , Michael Miller , Chau-Chin Wu , Kee Park , Scott Yu-Fan Chu
IPC分类号： G11C15/00
CPC分类号： G11C15/00 , G06F11/1064 , G11C29/42 , G11C29/44 , G11C29/4401 , G11C29/816 , G11C2029/1208
摘要： Search engine devices include a content addressable memory (CAM) core having a plurality of CAM array blocks therein and a control circuit. The control circuit, which is electrically coupled to the plurality of CAM array blocks, is configured to perform built-in self repair (BISR) of hard memory defects and/or compare logic defects in the plurality of CAM array blocks concurrently with operations to search entries in the plurality of CAM array blocks.
摘要翻译：搜索引擎设备包括其中具有多个CAM阵列块的内容可寻址存储器（CAM）核和控制电路。电耦合到多个CAM阵列块的控制电路被配置为与搜索操作同时执行硬存储器缺陷的内置自修复（BISR）和/或比较多个CAM阵列块中的逻辑缺陷多个CAM阵列块中的条目。

10. 发明授权

US07256423B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07256423B2
公开(公告)日：2007-08-14
申请号：US11186907
申请日：2005-07-22
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.
摘要翻译：一种薄膜半导体器件，其包括绝缘衬底，形成在衬底上的半导体多晶体薄膜和具有薄膜作为沟道的晶体管。多晶体包括多个晶粒，晶粒之间的晶界是凹陷的。具有凹陷表面的晶界是通道内所有晶界的最主要的。利用该结构，多晶体可以是能够在150℃以下的温度下形成的低温多晶体，从而实现具有高载流子迁移率的低成本器件。

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